Three Phase Rectifier Bridges PSD 82 IdAVM = 88A VRRM = 800-1800 V Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type PSD 82/08 PSD 82/12 PSD 82/14 PSD 82/16 PSD 82/18 Symbol Test Conditions IdAVM IFSM TC = 110°C, module 2 ò i dt TVJ TVJM Tstg VISOL Maximum Ratings 88 A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 750 820 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 670 740 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 2800 2800 A s 2 A s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 2250 2250 A s 2 A s -40 ... + 150 150 °C °C -40 ... + 125 °C 2500 3000 V∼ V∼ 5 ± 15% 5 ± 15% 160 Nm Nm 50/60 HZ, RMS IISOL ≤ 1 mA t = 1 min t=1s Md Mounting torque Terminal connection torque Weight typ. (M5) (M5) 2 2 g Features • Package with screw terminals • Isolation voltage 3000 V∼ • Planar glasspassivated chips • Blocking voltage up to 1800 V • Low forward voltage drop • UL registered E 148688 Applications • Supplies for DC power equipment • Input rectifiers for PWM inverter • Battery DC power supplies • Field supply for DC motors Advantages • Easy to mount with two screws • Space and weight savings • Improved temperature and power cycling Package, style and outline Dimensions in mm (1mm = 0.0394“) Symbol Test Conditions Characteristic Value IR VR = VRRM VR = VRRM TVJ = 25°C TVJ = TVJM ≤ ≤ 0.3 5 mA mA VF VTO rT RthJC IF = 150 A TVJ = 25°C ≤ 1.6 V 0.8 5 mΩ per Diode; DC current per module 1.1 0.183 K/W K/W RthJK per Diode; DC current per module 1.52 0.253 K/W K/W dS dA a Creeping distance on surface Creeping distance in air 10.0 9.4 mm mm For power-loss calculations only TVJ = TVJM Max. allowable acceleration BEVO Halbleitertechnik GmbH D-91217 Hersbruck Phone: 09151/1516 Fax.: 09151/7700 50 V m/s 2 PSD 82 200 IF(OV) -----IFSM 4 10 2 As IFSM (A) TVJ=45°C TVJ=150°C [A] 750 1.6 670 150 TVJ=45°C 1.4 1.2 100 10 3 TVJ=150°C 1 0 VRRM 50 0.8 Tvj = 150°C I F 1/2 VRRM Tvj = 25°C 0.6 1 VRRM 10 0 0.5 1 1.5 VF [V] 0.4 2 300 [W] 2 1 10 Fig. 1 Forward current versus voltage drop per diode 2 0 10 1 t[ms] 10 2 10 3 Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration 4 t [ms] 6 10 2 Fig. 3 òi dt versus time (1-10ms) per diode (or thyristor) 95 TC PSD 82 0.23 0.15 250 = RTHCA [K/W] 0.32 200 100 100 105 [A] 110 80 DC sin.180° rec.120° rec.60° rec.30° 115 0.48 60 120 150 125 0.82 40 130 100 DC sin.180° rec.120° rec.60° rec.30° 50 PVTOT 0 135 1.82 140 145 °C 150 20 IFAVM 40 60 80 0 [A] 50 100 Tamb 150 2 Z thJK 1.5 Z thJC 1 0.5 Zth 0.01 0.1 t[s] 1 IdAV 0 50 100 150 200 TC(°C) [K] Fig. 4 Power dissipation versus direct output current and ambient temperature K/W 20 10 Fig. 6 Transient thermal impedance per diode (or Thyristor), calculated Fig.5 Maximum forward current at case temperature