Light-current Far field pattern 800 CW drive Tc = 25°C 0.8 600 Po [mW] Spectrum 1.0 1.0 CW drive Tc = 25°C Po = 500 mW 0.8 CW drive Tc = 25°C Po = 500 mW θ⊥ 0.6 0.6 400 θ// 0.4 0.4 0.2 0.2 200 0 300 0 600 900 1200 0.0 –40 –20 If [mA] 0 20 0.0 40 650 Angle [deg.] 660 670 680 690 Wavelength [nm] ■ Figure 1 SLD1332V Representative Characteristics ■ Table 1 SLD1332V Main Characteristics P-side electrode Laser beam emitting point Item Active layer 400 Operating current Iop 900 Operating voltage Vop 2.4 V Oscillation wavelength λp 670 nm Parallel to junction θ// 8 Perpendicular to junction θ⊥ 24 Differential efficiency N-side electrode ■ Figure 2 SLD1332V Chip Structure ⊥ –2 –1 0 ηD mA deg. 1.0 mW/mA Conditions: TC = 25°C Po = 500 mW@CW 100 µm –3 Unit Ith Radiation angle GaAs substrate Symbol Typical value Threshold current 1 2 // 3 Unit: µm ■ Figure 3 SLD1332V Near-Field Pattern –80 –60 –40 –20 0 20 40 60 80 Unit: µm WWW.ALLDATASHEET.COM Copyright © Each Manufacturing Company. All Datasheets cannot be modified without permission. This datasheet has been download from : www.AllDataSheet.com 100% Free DataSheet Search Site. Free Download. No Register. Fast Search System. www.AllDataSheet.com