SSM4502GM
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
PRODUCT SUMMARY
N-CH BVDSS
D2
D2
Simple Drive Requirement
Low Gate Charge
Fast Switching Performance
20V
RDS(ON)
D1
D1
18mΩ
ID
SO-8
S1
S2
G1
8.3A
P-CH BVDSS
G2
-20V
RDS(ON)
DESCRIPTION
45mΩ
ID
-5A
The advanced power MOSFETs from Silicon Standard Corp.
provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is widly preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Pb-free; RoHS-compliant
D2
D1
G2
G1
S2
S1
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Units
P-channel
20
-20
V
±12
±12
V
3
8.3
-5
A
3
6.5
-4
A
30
-20
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
2.0
Linear Derating Factor
0.016
W
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
THERMAL DATA
Symbol
Rthj-a
02/13/2008 Rev.1.00
Parameter
Maximum Thermal Resistance, Junction-ambient
3
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Value
Unit
62.5
℃/W
1
SSM4502GM
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Min.
Typ.
20
-
-
V
VGS=10V, ID=9A
-
-
16
mΩ
VGS=4.5V, ID=8.3A
-
-
18
mΩ
VGS=2.5V, ID=5.2A
-
-
30
mΩ
VDS=VGS, ID=250uA
0.5
-
-
V
VDS=10V, ID=8.3A
-
8.3
-
S
Drain-Source Leakage Current (Tj=25 C)
VDS=20V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70oC)
VDS=16V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±12V
-
-
±100
nA
ID=8A
-
22
-
nC
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Test Conditions
o
IGSS
2
VGS=0V, ID=250uA
2
Max. Units
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=16V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
9
-
nC
VDS=10V
-
11
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
13
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=5V
-
30
-
ns
tf
Fall Time
RD=10Ω
-
14
-
ns
Ciss
Input Capacitance
VGS=0V
-
1350
-
pF
Coss
Output Capacitance
VDS=20V
-
325
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
255
-
pF
Min.
Typ.
IS=1.8A, VGS=0V
-
-
1.2
V
SOURCE-DRAIN DIODE
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=8A, VGS=0V,
-
32
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
24
-
nC
02/13/2008 Rev.1.00
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2
SSM4502GM
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Test Conditions
Typ.
-20
-
-
V
VGS=-10V, ID=-6A
-
-
40
mΩ
VGS=-4.5V, ID=-5A
-
-
45
mΩ
VGS=-2.5V, ID=-4A
-
-
80
mΩ
VDS=VGS, ID=-250uA
-0.5
-
-
V
VGS=0V, ID=-250uA
2
Max. Units
VDS=-10V, ID=-2.2A
-
2.2
-
S
o
VDS=-20V, VGS=0V
-
-
-1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=-16V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=±12V
-
-
±100
nA
ID=-5A
-
13
-
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
Min.
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-16V
-
1.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
4.5
-
nC
VDS=-10V
-
8
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
17
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-5V
-
24
-
ns
tf
Fall Time
RD=10Ω
-
36
-
ns
Ciss
Input Capacitance
VGS=0V
-
920
-
pF
Coss
Output Capacitance
VDS=-20V
-
90
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
85
-
pF
Min.
Typ.
Max.
30
SOURCE-DRAIN DIODE
Symbol
Parameter
Test Conditions
2
VSD
Forward On Voltage
IS=-1.8A, VGS=0V
-
-
-1.2
V
trr
Reverse Recovery Time
IS=-5A, VGS=0V,
-
28
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
16
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
02/13/2008 Rev.1.00
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3
SSM4502GM
N-Channel
30
30
5.0V
4.5V
3.5V
2.5V
20
V G = 2.0 V
10
20
V G =2.0V
10
0
0
0
1
2
0
3
1
2
3
4
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
34
I D = 5.2A
I D =8.3A
V G =10V
T A = 25 o C
Normalized R DS(ON)
30
RDS(ON0 (mΩ)
5.0V
4.5V
3.5V
2.5V
T A =150 ℃
ID , Drain Current (A)
ID , Drain Current (A)
T A =25 ℃
26
22
18
1.4
1.0
30
14
10
-30
0.6
1
2
3
4
5
-50
Fig 3. On-Resistance v.s. Gate Voltage
02/13/2008 Rev.1.00
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
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4
SSM4502GM
N-Channel
2.0
8
1.6
Normalized VGS(th) (V)
10
IS(A)
6
T j =150 o C
T j =25 o C
4
2
1.2
0.8
0.4
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50
V SD , Source-to-Drain Voltage (V)
02/13/2008 Rev.1.00
50
100
150
o
T j , Junction Temperature ( C)
Fig 5. Forward Characteristic of
Reverse Diode
0
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
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5
SSM4502GM
N-Channel
f=1.0MHz
10000
10
ID=8A
V DS = 10 V
C iss
1000
8
C (pF)
VGS , Gate to Source Voltage (V)
12
6
C oss
C rss
100
4
2
10
0
0
10
20
30
40
1
50
5
9
13
17
21
25
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R thja)
Duty factor=0.5
100us
10
ID (A)
1ms
10ms
1
100ms
1s
0.1
o
T A =25 C
Single Pulse
DC
0.01
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
T
Single Pulse
30
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
-30
Rthja=135 oC/W
0.001
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
02/13/2008 Rev.1.00
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6
SSM4502GM
N-Channel
VDS
VG
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Charge
Fig 11. Switching Time Waveform
02/13/2008 Rev.1.00
Q
Fig 12. Gate Charge Waveform
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7
SSM4502GM
P-Channel
20
20
T A = 150 o C
- 5.0 V
- 4.5 V
- 3.5 V
- 2.5 V
V G = - 1.5 V
T A =25 o C
16
-ID , Drain Current (A)
-ID , Drain Current (A)
16
-5.0 V
- 4.5 V
- 3.5 V
- 2.5 V
12
8
4
12
V G = - 1.5 V
8
4
0
0
0
1
2
3
4
5
0
1
-V DS , Drain-to-Source Voltage (V)
2
3
4
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.4
60
I D = -5.7 A
I D = -5.7 A
V G = - 10V
T A =25 o C
56
Normalized R DS(ON)
RDS(ON) (mΩ)
1.2
52
48
1.0
0.8
44
30
-30
0.6
40
1
2
3
4
5
-50
-V GS , Gate-to-Source Voltage (V)
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
02/13/2008 Rev.1.00
0
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
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8
SSM4502GM
P-Channel
8
1.2
Normalized -VGS(th) (V)
-IS(A)
6
4
T j =150 o C
T j =25 o C
1.0
0.8
2
0
0.6
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
02/13/2008 Rev.1.00
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
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9
SSM4502GM
P-Channel
f=1.0MHz
10000
9
I D = -5A
V DS = -16V
1000
C iss
C (pF)
-VGS , Gate to Source Voltage (V)
12
6
C oss
C rss
100
3
10
0
0.0
5.0
10.0
15.0
20.0
25.0
1
30.0
5
13
17
21
25
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (R thja)
100
10
-ID (A)
9
100us
1ms
1
10ms
100ms
1s
0.1
T A =25 o C
Single Pulse
DC
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
T
0.02
30
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
-30
0.01
Rthja=135 oC/W
Single Pulse
0.01
0.01
0.1
1
10
100
0.0001
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
02/13/2008 Rev.1.00
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
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10
SSM4502GM
P-Channel
VG
VDS
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
02/13/2008 Rev.1.00
Charge
Q
Fig 12. Gate Charge Waveform
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11
SSM4502GM
Package Outline : SO-8
D
8
7
Millimeters
6
5
E1
1
2
3
E
4
e
SYMBOLS
MIN
NOM
MAX
A
1.35
1.55
1.75
A1
0.10
0.18
0.25
B
0.33
0.41
0.51
C
0.19
0.22
0.25
D
4.80
4.90
5.00
E1
3.80
3.90
4.00
E
5.80
6.15
6.50
L
0.38
0.71
1.27
θ
0
4.00
8.00
e
B
1.27 TYP
A
A1
DETAIL A
L
θ
1.All Dimension Are In Millimeters.
2.Dimension Does Not Include Mold Protrusions.
c
DETAIL A
02/13/2008 Rev.1.00
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12
SSM4502GM
Part Marking Information & Packing : SO-8
Part Number
Package Code
meet Rohs requirement
4502GM
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
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13