STYN210(S) thru STYN1010(S) Discrete Thyristors(SCRs) Dim. Dimensions TO-220AB A B C D E F G H J K M N Q R G A K A G K Dimensions TO-263(D2PAK) A G K 1. 2. 3. 4. Gate Collector Emitter Collector Botton Side Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Dim. Millimeter Min. Max. Inches Min. Max. A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 8.00 9.65 8.89 .340 .315 .380 .350 E E1 e 9.65 10.29 6.22 8.13 2.54 BSC L L1 L2 L3 L4 .380 .405 .245 .320 .100 BSC 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.20 .575 .090 .040 .050 0 .625 .110 .055 .070 .008 0.46 0.74 .018 .029 R ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit RMS on-state current (180° conduction angle) Tc = 100°C 10 A IT(AV) Average on-state current (180° conduction angle) Tc = 100°C 6.4 A ITSM Non repetitive surge peak on-state current tp = 8.3 ms 105 tp = 10 ms 100 I²t Value tp = 10 ms 50 A2S 50 A/µs - 40 to + 150 - 40 to + 125 °C IT(RMS) I ²t dI/dt Critical rate of rise of on-state current Gate supply:IG = 100mA dIG/dt = 1A/µs Tstg Tj Storage junction temperature range Operating junction temperature range Tl A 260 Maximum lead soldering temperature during 10s at 4.5mm from case °C TYN VDRM VRRM Repetitive peak off-state voltage Tj = 125°C 210 410 610 810 1010 200 400 600 800 1000 V STYN210(S) thru STYN1010(S) Discrete Thyristors(SCRs) ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) ■ STANDARD Symbol IGT VGT VGD Test Conditions VD = 12 V VD = VDRM RL = 33 W RL = 3.3 kW TYNx08(S) Unit Tj = 25°C MAX. 15 mA Tj = 25°C MAX. 1.5 V Tj = 110°C MIN. 0.2 V tgt VD = VDRM IG =40mA dIG/dt = 0.5 A/µs Tj = 25°C TYP 2 µs IH IT = 100 mA Tj = 25°C MAX. 30 mA IL IG = 1.2 IGT Tj = 25°C TYP 50 mA Tj = 110°C MIN. 200 V/µs Tj = 25°C MAX. 1.6 V Tj = 110°C TYP 70 µs 0.01 mA mA Gate open dV/dt VD = 67 % VDRM VTM ITM = 20 A Gate open µs tp = 380 µs VD = 67 % VDRM I T M=20A V R =25V tq dI T M/dt=30 A/µs dV D /dt=50V /µs IDRM VDRM rated Tj = 25°C IRRM VRRM rated Tj = 110°C MAX. 2 THERMAL RESISTANCES Symbol Parameter Rth(j-c) J unction to case (DC) Rth(j-a) Junction to ambient (DC) S =1.0 cm ² Value Unit 2.5 °C/W TO-220AB 60 °C/W TO-263 45 S= copper surface under tab PRODUCT SELECTOR Voltage (xxx) Part Number Sensitivity Package STYN x10S 200~~1000 15 mA TO-263 S T Y N x10 200~~1000 15 mA TO-220AB OTHER INFORMATION Part Number Marking Weight Base Quantity Packing mode STYN x10S STYN x10S 1.5 g 50 Tube S T Y N x10 S T Y N x10 2.3 g 250 B ulk Note: x = voltage