YELLOW-GREEN Item No.: 160272 1. This specification applies to AlInGaP / GaAs LED Chips 2. Structure 2.1 Mesa structure 2.2 Electrodes 3. Outlines (dimensions in microns) p-side (anode) n-side (cathode) Au alloy or Al Au alloy p-Electrode Epitaxy AlInGaP 235 110 250 n-Substrate GaAs 235 n-Electrode Wire bond contacts can also be square 4. Electrical and optical characteristics (T=25°C) Parameter Symbol Conditions Forward voltage VF IF = 20 mA Reverse current IR VR = 5 V Luminous intensity * IV IF = 10 mA min typ max 2,10 2,40 V 10 µA 26,0 dom. wavelength λD IF = 20 mA 572 * On request, wafers will be delivered according to luminous intensity classes Brightness measurement at OSA on gold plate 5. Unit mcd nm Packing Dice on adhesive film with 1) wire bond side on top 2) back contact on top 6. Labeling Type Lot No. IV typ min max Quantity © 2004 OSA Opto Light GmbH Tel. +49-(0)30-65 76 26 83 Fax +49-(0)30-65 76 26 81 [email protected]