2N1671 – 2N1671A – 2N1671B PN BAR-TYPE SILICON UNIJUNCTION TRANSISTORS They are designed for medium-power switching, oscillator and pulse timing circuits. Package outline is similar to TO-5 except • • • • Highly Stable Negative Resistance and Firing Voltage Low Firing Current High Pulse Curent Capabilities Simplified Circuit Design ABSOLUTE MAXIMUM RATINGS Symbol Ratings VB1E Base 1 – Emitter Reverse Voltage VB2E Base 2 – Emitter Reverse Voltage VB1B2 Interbase Voltage IFRMS RMS Emitter Current IEM Emitter Peak Current PTOT Total Power Dissipation TJ Maximum Junction TSTG Storage Temperature Range 2N1671 2N1671A 2N1671B 2N1671 2N1671A 2N1671B 2N1671 2N1671A 2N1671B 2N1671 2N1671A 2N1671B 2N1671 2N1671A 2N1671B 2N1671 2N1671A 2N1671B 2N1671 2N1671A 2N1671B 2N1671 2N1671A 2N1671B Value Unit 30 V 30 V 35 V 50 mA 2 A 450 mW 150 °C -55 to +150 This data guaranteed in addition to JEDEC registered data COMSET SEMICONDUCTORS 1/2 2N1671 – 2N1671A – 2N1671B ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Min Typ Mx Unit Test Condition(s) IEB2O Emitter Reverse Current VB2E=30 V, IB1= 0 VEB1(sat) Emitter saturation Voltage VB2B1 = 10 V, IE= 50 mA RBBO Interbase Resistance VB2B1 = 3 V, , IE= 0 η Intrinsic stand-off ratio VB2B1= 10 V IV Valley Current VB2B1= 10 V, RB2= 100 IP Peak Current VB2B1= 25 V 2N1671 2N1671A 2N1671B 2N1671 2N1671A 2N1671B 2N1671 2N1671A 2N1671B 2N1671 2N1671A 2N1671B 2N1671 2N1671A 2N1671B 2N1671 2N1671A 2N1671B 4.7 4.7 4.7 0.47 0.47 0.47 - - -12 -12 -0.2 5 5 5 9.1 9.1 9.1 0.62 0.62 0.62 8 8 8 25 25 6 MECHANICAL DATA CASE TO-5 Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice. COMSET SEMICONDUCTORS 2/2 µA V K - mA µA