CMT08N50 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFET is designed to withstand high energy in Discrete Fast Recovery Diode avalanche and commutation modes. The new energy Diode is Characterized for Use in Bridge Circuits efficient design also offers a drain-to-source diode with a IDSS and VDS(on) Specified at Elevated Temperature fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. PIN CONFIGURATION SYMBOL TO-220/TO-220FP D SOURCE DRAIN GATE Top View G S 1 2 3 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Rating Drain to Current － Continuous － Pulsed Gate-to-Source Voltage － Continue － Non-repetitive Total Power Dissipation Symbol Value Unit A ID 8.0 IDM 32 VGS ±20 V VGSM ±40 V PD TO-220 W 125 TO-220FP 40 Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy － TJ = 25℃ TJ, TSTG -55 to 150 ℃ EAS 320 mJ θJC 1.0 ℃/W θJA 62.5 TL 260 (VDD = 100V, VGS = 10V, IL = 8A, L = 10mH, RG = 25Ω) Thermal Resistance － Junction to Case － Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds 2003/03/31 Preliminary Rev. 1.0 Champion Microelectronic Corporation ℃ Page 1 CMT08N50 POWER FIELD EFFECT TRANSISTOR ORDERING INFORMATION Part Number Package CMT08N50N220 TO-220 CMT08N50N220FP TO-220 Full Package ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25℃. CMT08N50 Characteristic Drain-Source Breakdown Voltage Symbol Min V(BR)DSS 500 Typ Max Units V (VGS = 0 V, ID = 250 μA) Drain-Source Leakage Current IDSS μA (VDS = 500 V, VGS = 0 V) 25 (VDS = 400 V, VGS = 0 V, TJ = 125℃) 250 Gate-Source Leakage Current-Forward IGSSF 100 nA IGSSR 100 nA 4.0 V (Vgsf = 20 V, VDS = 0 V) Gate-Source Leakage Current-Reverse (Vgsr = 20 V, VDS = 0 V) VGS(th) Gate Threshold Voltage 2.0 (VDS = VGS, ID = 250 μA) Static Drain-Source On-Resistance (VGS = 10 V, ID = 4.0A) * RDS(on) Drain-Source On-Voltage (VGS = 10 V) VDS(on) 0.8 Ω 5.0 7.2 V (ID = 8.0 A) Forward Transconductance (VDS = 50 V, ID = 4.0A) * gFS Input Capacitance Ciss 1450 1680 Coss 190 246 pF pF Crss 45.4 144 pF td(on) 15 50 ns ns (VDS = 25 V, VGS = 0 V, Output Capacitance f = 1.0 MHz) Reverse Transfer Capacitance Turn-On Delay Time Rise Time (RGo + C17n = 9.1Ω) * Turn-Off Delay Time Fall Time Total Gate Charge (VDS = 400 V, ID = 8.0 A, Gate-Source Charge VGS = 10 V)* Gate-Drain Charge Internal Drain Inductance 4.9 mmhos tr 33 72 td(off) 40 150 ns tf 32 60 ns Qg 40 64 Qgs 8.0 nC nC Qgd 17 nC LD 4.5 nH LS 7.5 nH (Measured from the drain lead 0.25” from package to center of die) Internal Drain Inductance (Measured from the source lead 0.25” from package to source bond pad) SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) (IS = 8.0 A, VGS = 0 V, Forward Turn-On Time dIS/dt = 100A/µs) Reverse Recovery Time VSD 1.5 V ton ** ns trr 320 ns * Pulse Test: Pulse Width ≦300µs, Duty Cycle ≦2% ** Negligible, Dominated by circuit inductance 2003/03/31 Preliminary Rev. 1.0 Champion Microelectronic Corporation Page 2 CMT08N50 POWER FIELD EFFECT TRANSISTOR TYPICAL ELECTRICAL CHARACTERISTICS 2003/03/31 Preliminary Rev. 1.0 Champion Microelectronic Corporation Page 3 CMT08N50 POWER FIELD EFFECT TRANSISTOR 2003/03/31 Preliminary Rev. 1.0 Champion Microelectronic Corporation Page 4 CMT08N50 POWER FIELD EFFECT TRANSISTOR 2003/03/31 Preliminary Rev. 1.0 Champion Microelectronic Corporation Page 5 CMT08N50 POWER FIELD EFFECT TRANSISTOR PACKAGE DIMENSION TO-220 A D c1 PIN 1: GATE PIN 2: DRAIN PIN 3: SOURCE E1 E F φ A A1 L1 b b1 c c1 D L E E1 e e1 F L b1 A1 c e b e1 L1 φ Side View Front View TO-220FP R I 0 0.1 .5 0 C 8± 3.1 J R1 B H Q D R1 .5 0 A A B C D E E H I O P K G J K 60 1. R M N O P G Q b R b b1 b2 e N M b2 b1 e R Side View Front View 2003/03/31 Preliminary Rev. 1.0 Back View Champion Microelectronic Corporation Page 6 CMT08N50 POWER FIELD EFFECT TRANSISTOR IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. Use of CMC products in such applications is understood to be fully at the risk of the customer. In order to minimize risks associated with the customer’s applications, the customer should provide adequate design and operating safeguards. HsinChu Headquarter Sales & Marketing 5F, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan T E L : +886-3-567 9979 F A X : +886-3-567 9909 11F, No. 306-3, SEC. 1, Ta Tung Road, Hsichih, Taipei Hsien 221, Taiwan 2003/03/31 Preliminary T E L : +886-2-8692 1591 F A X : +886-2-8692 1596 Rev. 1.0 Champion Microelectronic Corporation Page 7