CMT09N20 POWER MOSFET GENERAL DESCRIPTION FEATURES This Power MOSFET is designed for low voltage, high ! Dynamic dv/dt Rating speed power switching applications such as switching ! Repetitive Avalanche Rated regulators, converters, solenoid and relay drivers. ! Fast Switching ! Ease of Paralleling ! Simple Drive Requirements PIN CONFIGURATION SYMBOL TO-220 D SO URCE DRAIN G ATE Top View G S 1 2 N-Channel MOSFET 3 ORDERING INFORMATION Part Number Package CMT09N20N220 TO-220 ABSOLUTE MAXIMUM RATINGS Rating Drain to Current － Continuous Symbol Value Unit A ID 9.0 IDM 36 Gate-to-Source Voltage － Continue VGS ±20 Total Power Dissipation PD － Pulsed (Note 1) Derate above 25℃ V 74 W 0.59 W/℃ Single Pulse Avalanche Energy (Note 2) EAS 56 mJ Avalanche Current (Note 1) IAR 9.0 A Repetitive Avalanche Energy (Note 1) EAR 7.4 mJ Peak Diode Recovery dv/dt Operating and Storage Temperature Range Thermal Resistance － Junction to Case － Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds 2002/09/17 Preliminary Champion Microelectronic Corporation dv/dt 5.0 V/ns TJ, TSTG -55 to 150 ℃ θJC 1.70 ℃/W θJA 62 TL 300 ℃ Page 1 CMT09N20 POWER MOSFET ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25℃. CMT09N20 Characteristic Symbol Min V(BR)DSS 200 Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 μA) Typ Max Units V Drain-Source Leakage Current (VDS = 200V, VGS = 0 V) (VDS = 160V, VGS = 0 V, TJ = 125℃) IDSS Gate-Source Leakage Current-Forward (Vgsf = 20 V, VDS = 0 V) IGSSF 100 nA Gate-Source Leakage Current-Reverse (Vgsr = -20 V, VDS = 0 V) IGSSR -100 nA Gate Threshold Voltage (VDS = VGS, ID = 250 μA) VGS(th) 4.0 V Static Drain-Source On-Resistance (VGS = 10 V, ID = 5.4A) (Note 4) RDS(on) μA 25 250 2.0 0.40 gFS Input Capacitance Ciss 800 Coss 240 pF pF Crss 76 pF td(on) 9.4 tr 28 ns ns td(off) 39 ns tf 20 (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time (VDD = 100 V, ID = 5.9 A, RG = 12Ω, RD = 16Ω) (Note 4) Fall Time Total Gate Charge (VDS = 160V, ID = 5.9A VGS = 10 V) (Note 4) Gate-Source Charge Gate-Drain Charge 3.8 Ω Forward Transconductance (VDS = 50V, ID = 5.4 A) (Note 4) mhos ns Qg 43 Qgs 7.0 nC nC Qgd 23 nC Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die) LD 4.5 nH Internal Drain Inductance (Measured from the source lead 0.25” from package to source bond pad) LS 7.5 nH Qrr 1.1 ton ** trr 170 SOURCE-DRAIN DIODE CHARACTERISTICS Reverse Recovery Charge Forward Turn-On Time Reverse Recovery Time Diode Forward Voltage IF = 5.9A, di/dt = 100A/µs , TJ = 25℃ (Note 4) IS = 9.0A, VGS = 0 V, TJ = 25℃ (Note 4) VSD 2.2 µC 340 ns 1.5 V Note (1) Repetitive rating; pulse width limited by max. junction temperature (2) VDD = 100V, VGS = 10V , starting TJ = 25℃, L=1.38mH, RG = 25Ω, IAS = 9.0A (3) ISD ≦ 9.0A, di/dt ≦ 120A/µs, VDD ≦ V(BR)DSS, TJ ≦ 150℃ (4) Pulse Test: Pulse Width ≦300µs, Duty Cycle ≦2% ** Negligible, Dominated by circuit inductance 2002/09/17 Preliminary Champion Microelectronic Corporation Page 2 CMT09N20 POWER MOSFET TYPICAL ELECTRICAL CHARACTERISTICS 2002/09/17 Preliminary Champion Microelectronic Corporation Page 3 CMT09N20 POWER MOSFET 2002/09/17 Preliminary Champion Microelectronic Corporation Page 4 CMT09N20 POWER MOSFET 2002/09/17 Preliminary Champion Microelectronic Corporation Page 5 CMT09N20 POWER MOSFET 2002/09/17 Preliminary Champion Microelectronic Corporation Page 6 CMT09N20 POWER MOSFET PACKAGE DIMENSION TO-220 A D c1 PIN 1: GATE PIN 2: DRAIN PIN 3: SOURCE E1 E F φ A A1 L1 b b1 c c1 D L E E1 e e1 F L b1 e e1 b A1 c L1 φ Side View Front View 2002/09/17 Preliminary Champion Microelectronic Corporation Page 7 CMT09N20 POWER MOSFET IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. understood to be fully at the risk of the customer. Use of CMC products in such applications is In order to minimize risks associated with the customer’s applications, the customer should provide adequate design and operating safeguards. HsinChu Headquarter Sales & Marketing 5F, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan T E L : +886-3-567 9979 F A X : +886-3-567 9909 11F, No. 306-3, SEC. 1, Ta Tung Road, Hsichih, Taipei Hsien 221, Taiwan 2002/09/17 Preliminary T E L : +886-2-8692 1591 F A X : +886-2-8692 1596 Champion Microelectronic Corporation Page 8