CMT20N50 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination ! Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability ! Avalanche Energy Specified without degrading performance over time. In addition, this ! Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFET is designed to withstand high energy in Discrete Fast Recovery Diode avalanche and commutation modes. The new energy ! Diode is Characterized for Use in Bridge Circuits efficient design also offers a drain-to-source diode with a ! IDSS and VDS(on) Specified at Elevated Temperature fast recovery time. Designed for high voltage, high speed ! Isolated Mounting Hole Reduces Mounting Hardware switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. PIN CONFIGURATION SYMBOL D SO URCE DRAIN G ATE TO-3P Top View G S 1 2 N-Channel MOSFET 3 ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit A ID 20 IDM 60 VGS ±20 V VGSM ±40 V Drain to Current － Continuous － Pulsed Gate-to-Source Voltage － Continue － Non-repetitive Total Power Dissipation PD 250 W 2.00 W/℃ TJ, TSTG -55 to 150 ℃ EAS 276 mJ θJC 0.50 ℃/W θJA 40 TL 260 Derate above 25℃ Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy － TJ = 25℃ (VDD = 100V, VGS = 10V, IL = 20A, L = 1.38mH, RG = 25Ω) Thermal Resistance － Junction to Case － Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds (1) Pulse Width and frequency is limited by TJ(max) and thermal response 2002/07/24 Preliminary Champion Microelectronic Corporation ℃ Page 1 CMT20N50 POWER FIELD EFFECT TRANSISTOR ORDERING INFORMATION Part Number Package CMT20N50N3P TO-3P ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25℃. CMT20N50 Characteristic Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 μA) Symbol Min V(BR)DSS 500 Typ Max Units V mA Drain-Source Leakage Current (VDS = 500 V, VGS = 0 V) (VDS = 500 V, VGS = 0 V, TJ = 125℃) IDSS Gate-Source Leakage Current-Forward (Vgsf = 20 V, VDS = 0 V) IGSSF 100 nA Gate-Source Leakage Current-Reverse (Vgsr = 20 V, VDS = 0 V) IGSSR 100 nA Gate Threshold Voltage (VDS = VGS, ID = 250 μA) VGS(th) 4.0 V Static Drain-Source On-Resistance (VGS = 10 V, ID = 10A) * RDS(on) 0.25 Ω Drain-Source On-Voltage (VGS = 10 V) (ID = 20 A) VDS(on) 6.0 V 0.05 0.1 Forward Transconductance (VDS = 50 V, ID = 10A) * Input Capacitance (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge gFS (VDD = 250 V, ID = 20 A, VGS = 10 V, RG = 9.1Ω) * 2.0 5.75 11 mhos Ciss 3880 6950 Coss 452 920 pF pF Crss 96 140 pF td(on) 29 55 tr 90 165 ns ns td(off) 97 190 ns tf 84 170 ns Qg 100 132 Qgs 20 nC nC Qgd 44 nC Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die) LD 5.0 nH Internal Drain Inductance (Measured from the source lead 0.25” from package to source bond pad) LS 13 nH Gate-Source Charge Gate-Drain Charge (VDS = 400 V, ID = 20 A, VGS = 10 V)* SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) Forward Turn-On Time Reverse Recovery Time (IS = 20 A, dIS/dt = 100A/µs) VSD 1.5 V ton ** ns trr 431 ns * Pulse Test: Pulse Width ≦300µs, Duty Cycle ≦2% ** Negligible, Dominated by circuit inductance 2002/07/24 Preliminary Champion Microelectronic Corporation Page 2 CMT20N50 POWER FIELD EFFECT TRANSISTOR TYPICAL ELECTRICAL CHARACTERISTICS 2002/07/24 Preliminary Champion Microelectronic Corporation Page 3 CMT20N50 POWER FIELD EFFECT TRANSISTOR PACKAGE DIMENSION θ2 TO-3P A A1 A2 A3 b θ3 b1 C θ1 C1 D D1 D2 D3 D4 e f1 f2 L1 L2 L3 θ1 θ3 θ3 θ2 θ3 θ3 θ3 2002/07/24 Preliminary Champion Microelectronic Corporation Page 4 CMT20N50 POWER FIELD EFFECT TRANSISTOR IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. understood to be fully at the risk of the customer. Use of CMC products in such applications is In order to minimize risks associated with the customer’s applications, the customer should provide adequate design and operating safeguards. HsinChu Headquarter Sales & Marketing 5F-1, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan T E L : +886-3-567 9979 F A X : +886-3-567 9909 11F, No. 306-3, SEC. 1, Ta Tung Road, Hsichih, Taipei Hsien 221, Taiwan 2002/07/24 Preliminary T E L : +886-2-8692 1591 F A X : +886-2-8692 1596 Champion Microelectronic Corporation Page 5