D2012 YOUDA TRANSISTOR Si NPN TRANSISTOR—D2012 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 60V *Collector current up to 3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS (Tamb=25℃) PARAMETER SYMBOL Collector-Base Voltage BVCBO Collector-Emitter Voltage BVCEO Emitter-Base Voltage BVEBO Tcase=25℃ Collector Dissipation PCM Tamb=25℃ DC ICM Collector Current Pulse Icp Base Current IB Junction Temperature Tj Storage Temperature Tstg SYMBOL Emitter Collector Base VALUE 60 50 7 30 1.5 3 7 0.6 +150 -55～+150 UNIT V V V W W A A A ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃,all voltage referenced to GND Unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage ICBO IEBO hFE1 hFE2 VCE(sat) VcB=50V, IE=0 VEB=5V, IC=0 VcE=5V, IC=20mA VcE=5V, IC=0.5A Ic=3A, IB=0.3A Base-Emitter Saturation Voltage Current Gain Bandwidth Product VBE(sat) fT Output Capacitance Cob Ic=2A, IB=0.2A VcE=5V, IC=0.1A VcB=10V, IE=0,f=1MHz DC Current Gain CLASSIFICATION OF hFE RANK RANGE Q 100～200 P 160～320 MIN 30 100 TYP MAX UNIT 100 100 nA nA 400 0.5 V 200 0.3 1.0 5 80 2.0 V MHz pF E 200～400 WuXi YouDa Electronics Co., Ltd Add: No.5 Xijin Road, National Hi-Tech Industrial Development Zone, Wuxi Jiangsu China Tel: 86-510-5205117 86-510-5205108 Fax: 86-510-5205110 Website: www.e-youda.com SHENZHEN OFFICE Tel： 86-755-83740369 13823533350 Fax： 86-755-83741418 Ver 3.1 1 of 1 2004-9-20