AGILENT ATF

Agilent ATF-551M4 Low Noise
Enhancement Mode
Pseudomorphic HEMT in a
Miniature Leadless Package
Data Sheet
Features
• Very low noise figure and high
linearity
• Single Supply Enhancement Mode
Technology[1] optimized for 3V
operation
Description
Agilent Technologies’ ATF-551M4
is a high dynamic range, super
low noise, single supply
E-pHEMT GAAs FET housed in a
thin miniature leadless package.
The combination of small device
size, super low noise (under 1 dB
Fmin from 2 to 6 GHz), high
linearity and low power makes
the ATF-551M4 ideal for LNA or
hybrid module designs in wireless receiver in the 450 MHz to
10 GHz frequency band.
Applications include Cellular/
PCS/ WCDMA handsets and data
modem cards, fixed wireless
infrastructure in the 2.4, 3.5 GHz
and UNII frequency bands, as
well as 2.4 GHz 802.11b, 5 GHz
802.11a and HIPERLAN/2
Wireless LAN PC-cards.
Note:
1. Agilent’s enhancement mode E-pHEMT
devices are the first commercially available
single-supply GaAs transistors that do not
need a negative gate bias voltage for
operation. They can help simplify the design
and reduce the cost of receivers and
transmitters in many applications in the
450 MHz to 10 GHz frequency range.
MiniPak 1.4 mm x 1.2 mm Package
• Excellent uniformity in product
specifications
• 400 micron gate width
Vx
• Thin miniature package
1.4 mm x 1.2 mm x 0.7 mm
• Tape-and-reel packaging option
available
Pin Connections and
Package Marking
Source
Pin 3
Gate
Pin 2
Vx
Specifications
• 2 GHz; 2.7V, 10 mA (typ.)
Drain
Pin 4
Source
Pin 1
• 24.1 dBm output 3rd order intercept
• 14.6 dBm output power at 1 dB gain
compression
• 0.5 dB noise figure
• 17.5 dB associated gain
Note:
Top View. Package marking provides orientation,
product identification and date code.
“V” = Device Type Code
“x” = Date code character. A different
character is assigned for each month and
year.
Applications
• Low Noise Amplifier for:
– Cellular/PCS/WCDMA handsets and modem cards
– 2.4 GHz, 3.5 GHz and UNII fixed
wireless infrastructure
– 2.4 GHz 802.11b Wireless LAN
– 5 GHz 802.11a and HIPERLAN
Wireless LAN
• General purpose discrete E-pHEMT
for other ultra low noise applications
ATF-551M4 Absolute Maximum Ratings [1]
Symbol
Parameter
Units
Absolute
Maximum
VDS
Drain-Source Voltage [2]
V
5
VGS
Gate-Source Voltage [2]
V
-5 to 1
VGD
Gate Drain Voltage [2]
V
-5 to 1
IDS
Drain Current [2]
mA
100
IGS
Gate Current [5]
mA
1
Pdiss
Total Power Dissipation [3]
mW
270
Pin max.
RF Input Power
dBm
+10
TCH
Channel Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to 150
θjc
Thermal Resistance [4]
°C/W
240
Notes:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
2. Assumes DC quiescent conditions.
3. Source lead temperature is 25°C. Derate
6 mW/°C for TL > 40°C.
4. Thermal resistance measured using
150°C Liquid Crystal Measurement method.
5. Device can safely handle +10 dBm RF Input
Power provided IGS is limited to 1 mA. IGS at
P1dB drive RF level is bias circuit dependent.
See applications section for additional
information.
70
0.7V
60
IDS (mA)
50
0.6V
40
30
0.5V
20
10
0.4V
0.3V
0
0
1
2
3
4
VDS (V)
5
6
7
Figure 1. Typical I-V Curves.
(VGS = 0.1 V per step)
Product Consistency Distribution Charts [6]
150
180
Cpk = 2.85
Stdev = 0.25
Cpk = 1.64
Stdev = 0.19
150
160
Cpk = 2.46
Stdev = 0.06
120
120
120
-3 Std
90
+3 Std
-3 Std
+3 Std
80
90
60
60
0
40
30
30
0
15
16
17
18
19
GAIN (dBm)
Figure 2. Capability Plot for Gain @ 2.7 V,
10 mA. LSL = 15.5, Nominal = 17.5,
USL = 18.5
22
23
24
25
26
OIP3
Figure 3. Capability Plot for OIP3 @ 2.7 V,
10 mA. LSL = 22.0, Nominal = 24.1
0
0.29
0.49
0.69
0.89
1.09
NF
Figure 4. Capability Plot for NF @ 2.7 V,
10 mA. Nominal = 0.5, USL = 0.9
Note:
6. Distribution data sample size is 398 samples taken from 4 different wafers. Future wafers allocated to this product may have nominal values anywhere
between the upper and lower limits. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match
and a realizeable match based on production test equipment. Circuit losses have been de-embedded from actual measurements.
2
ATF-551M4 Electrical Specifications
TA = 25°C, RF parameters measured in a test circuit for a typical device
Symbol
Parameter and Test Condition
Units
Min.
Typ.
Max.
Vgs
Operational Gate Voltage
Vds = 2.7V, Ids = 10 mA
V
0.3
0.47
0.65
Vth
Threshold Voltage
Vds = 2.7V, Ids = 2 mA
V
0.18
0.37
0.53
Idss
Saturated Drain Current
Vds = 2.7V, Vgs = 0V
µA
—
0.1
3
Gm
Transconductance
Vds = 2.7V, gm = ∆Idss/∆Vgs;
∆Vgs = 0.75 – 0.7 = 0.05V
mmho
110
220
285
Igss
Gate Leakage Current
Vgd = Vgs = -2.7V
µA
—
—
95
NF
Noise
Figure [1]
f = 2 GHz
Vds = 2.7V, Ids = 10 mA
Vds = 3V, Ids = 20 mA
dB
dB
—
—
0.5
0.5
0.9
—
Gain
Gain [1]
f = 2 GHz
Vds = 2.7V, Ids = 10 mA
Vds = 3V, Ids = 20 mA
dB
dB
15.5
—
17.5
18.0
18.5
—
OIP3
Output 3rd Order
Intercept Point [1]
f = 2 GHz
Vds = 2.7V, Ids = 10 mA
Vds = 3V, Ids = 20 mA
dBm
dBm
22
—
24.1
30.0
—
—
P1dB
1dB Compressed
Output Power [1]
f = 2 GHz
Vds = 2.7V, Ids = 10 mA
Vds = 3V, Ids = 20 mA
dBm
dBm
—
—
14.6
16.0
—
—
Notes:
1. Measurements obtained using production test board described in Figure 5. Typical values were determined from a sample size of 398 parts from
4 wafers.
Input
50Ω Input
Transmission
Line Including
Gate Bias T
(0.3 dB loss)
Input
Matching Circuit
Γ_mag = 0.3
Γ_ang = 11°
(0.3 dB loss)
DUT
Output
Matching Circuit
Γ_mag = 0.3
Γ_ang = 9°
(0.9 dB loss)
50Ω Output
Transmission
Line Including
Gate Bias T
(0.3 dB loss)
Output
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Gain, P1dB, OIP3, and IIP3 measurements. This circuit represents a
trade-off between an optimal noise match, maximum OIP3 match and associated impedance matching circuit losses. Circuit losses have been deembedded from actual measurements.
ATF-551M4 Electrical Specifications (see notes 2 and 3, as indicated)
Symbol
Parameter and Test Condition
Units
Min.
Typ.
Max.
Fmin
Minimum Noise Figure [2]
f = 900 GHz
f = 2 GHz
f = 3.9 GHz
f = 5.8 GHz
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
dB
dB
dB
dB
—
—
—
—
0.27
0.41
0.61
0.88
—
—
—
—
Ga
Associated Gain [2]
f = 900 GHz
f = 2 GHz
f = 3.9 GHz
f = 5.8 GHz
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
dB
dB
dB
dB
—
—
—
—
21.8
17.9
14.2
12.0
—
—
—
—
OIP3
Output 3rd Order
Intercept Point [3]
f = 900 GHz
f = 3.9 GHz
f = 5.8 GHz
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
dBm
dBm
dBm
—
—
—
22.1
24.3
24.5
—
—
—
P1dB
1dB Compressed
Output Power [3]
f = 900 GHz
f = 3.9 GHz
f = 5.8 GHz
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
dBm
dBm
dBm
—
—
—
14.3
14.5
14.3
—
—
—
Notes:
2. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
3. Measurements taken above and below 2 GHz was made using a double stub tuner at the input tuned for low noise and a double stub tuner at the
output tuned for maximum OIP3. Circuit losses have been de-embedded from actual measurements.
3
0.50
25
0.45
24
0.40
23
0.35
22
32
2V
2.7V
3V
28
0.30
21
0.25
2V
2.7V
3V
20
26
24
22
0.20
20
19
0.15
18
18
0.10
0
5
10
15
20
25
30
35
5
10
20
25
30
35
17
5
16
4
15
P1dB (dBm)
18
6
3
2
1
0
5
10
15
20
25
30
35
Ids (mA)
Figure 7. Fmin vs. Ids and Vds at 900 MHz[2].
7
Figure 8. OIP3 vs. Ids and Vds at 900 MHz[1].
14
13
12
0
11
2V
2.7V
3V
-1
-2
15
Ids (mA)
Figure 6. Gain vs. Ids and Vds at 900 MHz[1].
2V
2.7V
3V
16
0
Ids (mA)
IIP3 (dBm)
30
OIP3 (dBm)
26
Fmin (dB)
GAIN (dB)
ATF-551M4 Typical Performance Curves
0
5
10
15
20
25
30
2V
2.7V
3V
10
35
Ids (mA)
Figure 9. IIP3 vs. Ids and Vds at 900 MHz[1].
9
0
5
10
15
20
25
30
35
Idq (mA)
Figure 10. P1dB vs. Idq and Vds at 900 MHz[1].
Notes:
1. Measurements at 900MHz were made using an ICM fixture with a double stub tuner at the input tuned for low noise and a double stub tuner at the
output tuned for maximum OIP3. Circuit losses have been de-embedded from actual measurements.
2. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
3. P1dB measurements are performed with passive biasing. Quiescent drain current, Idsq, is set with zero RF drive applied. As P1dB is approached, the
drain current may increase or point. At lower values of Idsq, the device is running close to class B as power output approaches P1dB. This results in
higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with
active biasing. As an example, at a VDS = 2.7V and Idsq = 5 mA, Id increases to 15 mA as a P1dB of +14.5 dBm is approached.
4
ATF-551M4 Typical Performance Curves, continued
20
0.6
36
0.5
19
32
17
OIP3 (dBm)
Fmin (dB)
GAIN (dB)
0.4
18
0.3
28
24
0.2
2V
2.7V
3V
16
2V
2.7V
3V
0.1
0
15
0
5
10
15
20
25
30
35
16
0
5
10
Ids (mA)
15
20
25
30
35
Ids (mA)
Figure 11. Gain vs. Ids and Vds at 2 GHz[1].
2V
2.7V
3V
20
0
5
10
15
20
25
30
35
Ids (mA)
Figure 12. Fmin vs. Ids and Vds at 2 GHz[2].
Figure 13. OIP3 vs. Ids and Vds at 2 GHz[1].
17
18
16
16
14
P1dB (dB)
IIP3 (dBm)
15
12
10
8
6
13
12
4
2V
2.7V
3V
2
0
14
0
5
10
15
20
25
30
2V
2.7V
3V
11
35
Ids (mA)
Figure 14. IIP3 vs. Ids and Vds at 2 GHz[1].
10
0
5
10
15
20
25
30
35
Idq (mA)
Figure 15. P1dB vs. Idq and Vds at 2 GHz[1].
Notes:
1. Measurements at 2 GHz with biasing 2.7V, 10 mA were made on a fixed tuned production test board that was tuned for optimal OIP3 match with
reasonable noise figure. This circuit represents a trade-off between optimal noise match, maximum OIP3 match and a realizable match based on
production test board requirements. Measurements taken other than 2.7V, 10 mA biasing was made using a double stub tuner at the input tuned for
low noise and a double stub tuner at the output tuned for maximum OIP3. Circuit losses have been de-embedded from actual measurements.
2. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
3. P1dB measurements are performed with passive biasing. Quiescent drain current, Idsq, is set with zero RF drive applied. As P1dB is approached, the
drain current may increase or point. At lower values of Idsq, the device is running close to class B as power output approaches P1dB. This results in
higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with
active biasing. As an example, at a VDS = 2.7V and Idsq = 5 mA, Id increases to 15 mA as a P1dB of +14.5 dBm is approached.
5
ATF-551M4 Typical Performance Curves, continued
30
1.4
26
1.2
25
25
24
20
15
OIP3 (dBm)
Fmin (dB)
GAIN (dB)
1.0
0.8
0.6
0.4
23
22
21
20
10
0.2
2V 10 mA
2.7V 10 mA
2V 10 mA
2.7V 10 mA
0
5
0
1
2
3
4
5
6
18
0
1
FREQUENCY (GHz)
2
3
4
5
6
FREQUENCY (GHz)
Figure 16. Gain vs. Bias over Frequency[1].
0
1
2
3
4
5
6
FREQUENCY (GHz)
Figure 17. Fmin vs. Bias over Frequency[2].
16
2V 10 mA
2.7V 10 mA
19
Figure 18. OIP3 vs. Bias over Frequency[1].
16
14
15
12
8
P1dB (dBm)
IIP3 (dBm)
10
6
4
2
14
13
12
0
-2
-6
11
2V 10 mA
2.7V 10 mA
-4
0
1
2
3
4
5
6
FREQUENCY (GHz)
Figure 19. IIP3 vs. Bias over Frequency[1].
10
2V 10 mA
2.7V 10 mA
0
1
2
3
4
5
6
FREQUENCY (GHz)
Figure 20. P1dB vs. Bias over Frequency[1].
Notes:
1. Measurements at 2 GHz were made on a fixed tuned production test board that was tuned for optimal OIP3 match with reasonable noise figure at 2.7 V,
10 mA bias. This circuit represents a trade-off between optimal noise match, maximum OIP3 match and a realizable match based on production test
board requirements. Measurements taken above and below 2 GHz was made using a double stub tuner at the input tuned for low noise and a double
stub tuner at the output tuned for maximum OIP3. Circuit losses have been de-embedded from actual measurements.
2. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
3. P1dB measurements are performed with passive biasing. Quiescent drain current, Idsq, is set with zero RF drive applied. As P1dB is approached, the
drain current may increase or point. At lower values of Idsq, the device is running close to class B as power output approaches P1dB. This results in
higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with
active biasing. As an example, at a VDS = 2.7V and Idsq = 5 mA, Id increases to 15 mA as a P1dB of +14.5 dBm is approached.
6
ATF-551M4 Typical Performance Curves, continued
30
1.6
-40°C
25°C
85°C
25
25
-40°C
25°C
85°C
1.4
24
20
15
OIP3 (dBm)
Fmin (dB)
GAIN (dB)
1.2
1.0
0.8
0.6
23
22
21
0.4
10
0
5
0
1
2
3
4
5
6
0
1
FREQUENCY (GHz)
16
15
15
10
14
P1dB (dBm)
IIP3 (dBm)
3
4
5
6
5
19
0
1
2
3
4
5
6
FREQUENCY (GHz)
Figure 22. Fmin vs. Temperature and
Frequency with Bias at 2.7V, 10 mA[2].
20
Figure 23. OIP3 vs. Temperature and
Frequency with Bias at 2.7V, 10 mA[1].
13
12
0
-40°C
25°C
85°C
-5
-10
2
FREQUENCY (GHz)
Figure 21. Gain vs. Temperature and
Frequency with Bias at 2.7V, 10 mA[1].
-40°C
25°C
85°C
20
0.2
0
1
2
3
4
5
FREQUENCY (GHz)
Figure 24. IIP3 vs. Temperature and
Frequency with Bias at 2.7V, 10 mA[1].
-40°C
25°C
85°C
11
6
10
0
1
2
3
4
5
6
FREQUENCY (GHz)
Figure 25. P1dB vs. Temperature and
Frequency with Bias at 2.7V, 10 mA[1].
Notes:
1. Measurements at 2 GHz were made on a fixed tuned production test board that was tuned for optimal OIP3 match with reasonable noise figure at 2.7 V, 10
mA bias. This circuit represents a trade-off between optimal noise match, maximum OIP3 match and a realizable match based on production test board
requirements. Measurements taken above and below 2 GHz was made using a double stub tuner at the input tuned for low noise and a double stub tuner at
the output tuned for maximum OIP3. Circuit losses have been de-embedded from actual measurements.
2. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
3. P1dB measurements are performed with passive biasing. Quiescent drain current, Idsq, is set with zero RF drive applied. As P1dB is approached, the drain
current may increase or point. At lower values of Idsq, the device is running close to class B as power output approaches P1dB. This results in higher P1dB
and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with active biasing. As
an example, at a VDS = 2.7V and Idsq = 5 mA, Id increases to 15 mA as a P1dB of +14.5 dBm is approached.
7
ATF-551M4 Typical Scattering Parameters, VDS = 2V, IDS = 10 mA
Freq.
GHz
Mag.
S11
Ang.
dB
S21
Mag.
Ang.
Mag.
S12
Ang.
Mag.
S22
Ang.
MSG/MAG
dB
0.1
0.5
0.9
1.0
1.5
1.9
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
0.995
0.954
0.906
0.896
0.833
0.790
0.781
0.739
0.710
0.683
0.679
0.680
0.681
0.683
0.690
0.687
0.691
0.696
0.713
0.747
0.759
0.808
0.828
0.870
-6.0
-29.1
-50.7
-55.7
-79.5
-96.5
-100.4
-118.5
-134.4
-160.0
-179.8
166.5
154.0
143.7
132.7
119.7
106.5
92.6
81.8
67.4
55.5
45.4
37.3
30.9
20.41
19.95
19.35
19.18
18.15
17.22
17.00
15.84
14.74
12.75
11.03
9.65
8.43
7.43
6.53
5.72
4.98
4.28
3.53
2.82
1.97
1.00
-0.01
-1.04
10.479
9.946
9.280
9.103
8.080
7.260
7.078
6.197
5.459
4.341
3.559
3.036
2.638
2.353
2.122
1.932
1.775
1.636
1.501
1.384
1.255
1.122
0.999
0.887
175.9
158.2
144.2
141.0
125.6
114.9
112.5
101.1
91.2
74.5
60.3
48.5
37.2
26.4
15.7
4.5
-6.4
-17.7
-28.6
-40.4
-51.8
-62.4
-72.7
-82.6
0.007
0.031
0.052
0.056
0.075
0.085
0.087
0.095
0.099
0.104
0.105
0.107
0.107
0.110
0.113
0.117
0.122
0.129
0.135
0.143
0.149
0.153
0.157
0.159
86.3
71.6
60.8
58.3
46.8
39.0
37.3
29.8
23.7
14.8
8.6
5.0
2.1
-0.3
-2.6
-5.4
-8.4
-12.3
-16.2
-21.8
-27.4
-33.3
-39.2
-45.2
0.803
0.758
0.710
0.692
0.611
0.547
0.532
0.463
0.404
0.318
0.263
0.220
0.199
0.185
0.181
0.185
0.196
0.209
0.206
0.211
0.237
0.269
0.322
0.383
-3.3
-15.6
-27.4
-30.2
-42.3
-50.4
-52.3
-60.6
-67.6
-79.6
-91.2
-99.5
-111.0
-123.4
-137.7
-151.1
-163.5
-174.4
171.4
151.2
131.8
113.3
95.4
80.1
31.75
25.06
22.52
22.11
20.32
19.32
19.10
18.14
17.41
16.21
15.30
14.53
13.92
13.30
11.27
9.97
9.14
8.44
7.80
7.62
6.73
6.90
6.20
7.47
Typical Noise Parameters, VDS = 2V, IDS = 10 mA
Fmin
dB
Γopt
Mag.
Γopt
Ang.
Rn/50
Ga
dB
0.5
0.9
1.0
1.9
2.0
2.4
3.0
3.9
5.0
5.8
6.0
7.0
8.0
9.0
10.0
0.24
0.24
0.28
0.45
0.39
0.47
0.55
0.61
0.74
0.89
0.90
1.03
1.13
1.27
1.53
0.62
0.56
0.52
0.47
0.47
0.42
0.35
0.32
0.33
0.36
0.37
0.38
0.44
0.48
0.46
-4.3
8.8
13.5
38.6
42.9
52.8
74.0
105.4
144.0
164.3
166.1
-170.9
-157.2
-142.4
-126.0
0.14
0.13
0.12
0.11
0.11
0.11
0.09
0.08
0.06
0.05
0.05
0.06
0.07
0.09
0.17
23.50
21.66
21.61
18.04
17.88
16.76
15.66
14.10
12.74
11.83
11.63
10.71
9.99
9.36
8.46
40
MSG/MAG and |S21|2 (dB)
Freq
GHz
30
MSG
20
MAG
MSG
10
2
|S21|
0
-10
0
5
10
15
20
FREQUENCY (GHz)
Figure 26. MSG/MAG and |S21|2 vs.
Frequency at 2V, 10 mA.
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of
the gate pad. The output reference plane is at the end of the drain pad.
8
ATF-551M4 Typical Scattering Parameters, VDS = 2V, IDS = 15 mA
Freq.
GHz
Mag.
S11
Ang.
dB
S21
Mag.
Ang.
Mag.
S12
Ang.
Mag.
S22
Ang.
MSG/MAG
dB
0.1
0.5
0.9
1.0
1.5
1.9
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
0.995
0.947
0.892
0.880
0.812
0.768
0.758
0.718
0.692
0.671
0.670
0.671
0.674
0.676
0.684
0.682
0.686
0.691
0.708
0.744
0.756
0.805
0.825
0.870
-6.6
-31.6
-54.7
-60.1
-84.9
-102.1
-106.1
-124.1
-139.7
-164.5
176.6
163.5
151.5
141.6
130.9
118.0
105.1
91.4
80.9
66.5
54.9
45.0
37.0
30.7
21.93
21.41
20.67
20.46
19.26
18.23
17.98
16.73
15.55
13.47
11.70
10.30
9.06
8.06
7.14
6.33
5.59
4.88
4.13
3.42
2.59
1.59
0.61
-0.41
12.489
11.757
10.804
10.547
9.186
8.153
7.923
6.859
5.991
4.716
3.845
3.273
2.838
2.528
2.276
2.072
1.903
1.753
1.609
1.483
1.347
1.201
1.073
0.954
175.5
156.7
142.0
138.6
123.0
112.3
109.9
98.9
89.3
73.3
59.7
48.3
37.4
27.0
16.5
5.6
-5.0
-16.1
-26.9
-38.5
-49.7
-60.2
-70.4
-80.1
0.006
0.029
0.048
0.052
0.067
0.076
0.077
0.084
0.088
0.092
0.095
0.098
0.101
0.105
0.111
0.117
0.124
0.132
0.140
0.148
0.155
0.158
0.161
0.163
86.2
70.9
59.7
57.1
46.0
38.7
37.2
30.5
25.3
18.0
13.1
10.5
8.2
6.1
3.7
0.6
-3.1
-7.6
-12.3
-18.6
-24.9
-31.2
-37.5
-43.8
0.765
0.715
0.659
0.641
0.555
0.489
0.474
0.407
0.352
0.272
0.222
0.181
0.164
0.152
0.150
0.156
0.170
0.183
0.181
0.188
0.217
0.253
0.310
0.373
-3.7
-17.0
-29.6
-32.5
-45.0
-53.1
-55.0
-63.2
-70.2
-82.3
-94.5
-103.2
-115.4
-128.5
-143.3
-156.9
-169.0
-179.3
165.9
145.0
125.0
106.8
89.4
74.9
33.18
26.08
23.52
23.07
21.37
20.31
20.12
19.12
18.33
17.10
16.07
15.24
14.49
12.66
11.51
10.35
9.57
8.87
8.27
8.14
7.23
7.38
6.61
7.67
Typical Noise Parameters, VDS = 2V, IDS = 15 mA
Fmin
dB
Γopt
Mag.
Γopt
Ang.
Rn/50
Ga
dB
0.5
0.9
1.0
1.9
2.0
2.4
3.0
3.9
5.0
5.8
6.0
7.0
8.0
9.0
10.0
0.21
0.21
0.27
0.42
0.37
0.44
0.52
0.57
0.71
0.85
0.86
0.97
1.08
1.22
1.44
0.61
0.55
0.50
0.46
0.43
0.39
0.32
0.28
0.30
0.35
0.35
0.38
0.43
0.47
0.46
-6.1
7.0
11.4
38.1
42.7
52.9
74.4
108.3
149.5
170.0
171.7
-165.9
-152.1
-138.1
-122.5
0.12
0.12
0.11
0.10
0.10
0.10
0.08
0.07
0.06
0.05
0.05
0.06
0.07
0.10
0.17
24.12
22.18
22.12
18.61
18.52
17.34
16.21
14.65
13.27
12.38
12.19
11.24
10.49
9.84
8.96
40
MSG/MAG and |S21|2 (dB)
Freq
GHz
30
MSG
20
MAG
MSG
10
|S21|2
0
-10
0
5
10
15
20
FREQUENCY (GHz)
Figure 27. MSG/MAG and |S21|2 vs.
Frequency at 2V, 15 mA.
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of
the gate pad. The output reference plane is at the end of the drain pad.
9
ATF-551M4 Typical Scattering Parameters, VDS = 2V, IDS = 20 mA
Freq.
GHz
Mag.
S11
Ang.
dB
S21
Mag.
Ang.
Mag.
S12
Ang.
Mag.
S22
Ang.
MSG/MAG
dB
0.1
0.5
0.9
1.0
1.5
1.9
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
0.994
0.942
0.882
0.869
0.798
0.753
0.744
0.706
0.681
0.663
0.664
0.666
0.670
0.673
0.681
0.678
0.682
0.688
0.706
0.743
0.753
0.804
0.824
-6.9
-33.3
-57.3
-62.8
-88.1
-105.5
-109.5
-127.4
-142.7
-167.0
174.6
161.9
150.1
140.4
129.8
117.1
104.3
90.6
80.3
65.9
54.4
44.7
36.7
22.85
22.27
21.44
21.21
19.90
18.79
18.53
17.22
16.01
13.88
12.09
10.68
9.43
8.42
7.51
6.68
5.94
5.23
4.48
3.76
2.92
1.93
0.95
13.876
12.985
11.806
11.491
9.881
8.704
8.443
7.262
6.314
4.943
4.021
3.418
2.962
2.637
2.373
2.158
1.982
1.826
1.675
1.542
1.400
1.249
1.116
175.3
155.7
140.5
137.1
121.3
110.7
108.4
97.5
88.2
72.5
59.3
48.1
37.3
27.1
16.8
6.0
-4.6
-15.6
-26.3
-38.0
-48.9
-59.3
-69.4
0.006
0.027
0.045
0.048
0.062
0.070
0.071
0.077
0.081
0.085
0.089
0.093
0.097
0.103
0.109
0.117
0.125
0.133
0.142
0.150
0.157
0.160
0.163
85.6
70.4
59.0
56.5
45.7
38.9
37.4
31.3
26.7
20.3
16.2
14.1
12.0
10.0
7.4
3.7
-0.2
-5.2
-10.3
-17.0
-23.6
-30.1
-36.5
0.740
0.687
0.627
0.608
0.520
0.455
0.441
0.376
0.323
0.248
0.201
0.162
0.144
0.133
0.131
0.139
0.154
0.168
0.169
0.182
0.212
0.250
0.306
-3.9
-17.8
-30.9
-33.8
-46.4
-54.4
-56.3
-64.3
-71.0
-82.9
-95.2
-103.7
-116.4
-130.0
-145.9
-160.3
-172.7
176.9
161.6
139.6
121.2
103.8
87.0
33.64
26.82
24.19
23.79
22.02
20.95
20.75
19.75
18.92
17.65
16.55
15.65
14.85
12.78
11.65
10.56
9.80
9.11
8.56
8.46
7.48
7.76
6.93
18.0
0.869
30.6
-0.05
0.994
-78.9
0.165
-43.0
0.367
73.0
7.80
Typical Noise Parameters, VDS = 2V, IDS = 20 mA
Fmin
dB
Γopt
Mag.
Γopt
Ang.
Rn/50
Ga
dB
0.5
0.9
1.0
1.9
2.0
2.4
3.0
3.9
5.0
5.8
6.0
7.0
8.0
9.0
10.0
0.19
0.20
0.25
0.41
0.36
0.43
0.51
0.58
0.70
0.85
0.86
0.94
1.07
1.20
1.43
0.59
0.54
0.48
0.43
0.41
0.37
0.29
0.26
0.29
0.34
0.35
0.37
0.42
0.48
0.46
-7.0
6.3
10.1
38.7
43.1
53.4
76.3
112.7
154.0
173.6
175.9
-162.3
-148.2
-135.2
-119.5
0.11
0.11
0.10
0.09
0.09
0.09
0.08
0.07
0.05
0.05
0.05
0.06
0.08
0.10
0.17
23.50
21.66
21.61
18.04
17.88
16.76
15.66
14.10
12.74
11.83
11.63
10.71
9.99
9.36
8.46
40
MSG/MAG and |S21|2 (dB)
Freq
GHz
30
MSG
20
MAG
MSG
10
|S21|2
0
-10
0
5
10
15
20
FREQUENCY (GHz)
Figure 28. MSG/MAG and |S21|2 vs.
Frequency at 2V, 20 mA.
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of
the gate pad. The output reference plane is at the end of the drain pad.
10
ATF-551M4 Typical Scattering Parameters, VDS = 2.7V, IDS = 10 mA
Freq.
GHz
Mag.
S11
Ang.
dB
S21
Mag.
Ang.
Mag.
S12
Ang.
Mag.
S22
Ang.
MSG/MAG
dB
0.1
0.5
0.9
1.0
1.5
1.9
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
0.995
0.955
0.907
0.896
0.833
0.789
0.779
0.737
0.707
0.679
0.674
0.675
0.676
0.679
0.686
0.684
0.688
0.693
0.710
0.743
0.760
0.805
0.830
0.872
-5.9
-28.7
-50.0
-55.0
-78.6
-95.5
-99.4
-117.4
-133.4
-159.1
-178.9
167.3
154.9
144.5
133.5
120.8
107.5
93.7
82.7
68.6
56.5
46.2
38.1
31.5
20.55
20.11
19.52
19.36
18.34
17.43
17.21
16.07
14.98
13.01
11.30
9.93
8.72
7.73
6.84
6.03
5.30
4.59
3.86
3.19
2.37
1.42
0.43
-0.58
10.656
10.129
9.466
9.292
8.265
7.439
7.255
6.361
5.610
4.471
3.673
3.136
2.728
2.435
2.198
2.002
1.841
1.696
1.559
1.443
1.314
1.177
1.051
0.935
175.9
158.4
144.6
141.4
126.1
115.4
113.0
101.7
91.8
75.0
60.8
49.1
37.7
27.0
16.2
5.1
-5.9
-17.2
-28.2
-39.8
-51.5
-62.2
-72.8
-83.1
0.006
0.028
0.046
0.050
0.067
0.076
0.078
0.085
0.089
0.093
0.094
0.095
0.096
0.099
0.102
0.107
0.113
0.121
0.129
0.139
0.147
0.153
0.158
0.163
86.3
72.0
61.3
58.8
47.6
40.0
38.4
31.0
25.1
16.6
10.9
8.1
5.9
4.3
2.9
0.7
-1.7
-5.2
-8.9
-14.3
-20.2
-26.2
-32.5
-39.1
0.825
0.782
0.735
0.717
0.639
0.577
0.562
0.495
0.439
0.357
0.303
0.264
0.244
0.230
0.222
0.222
0.230
0.239
0.232
0.222
0.232
0.251
0.293
0.353
-3.0
-14.0
-24.5
-27.0
-37.6
-44.6
-46.2
-53.1
-58.8
-68.3
-77.6
-83.7
-93.5
-104.1
-116.6
-129.0
-140.8
-151.9
-164.6
176.6
155.6
134.3
112.0
92.7
32.49
25.58
23.13
22.69
20.91
19.91
19.69
18.74
18.00
16.82
15.92
15.19
14.54
12.94
11.58
10.44
9.69
9.02
8.47
8.42
7.69
8.26
8.07
7.59
Typical Noise Parameters, VDS = 2.7V, IDS = 10 mA
Fmin
dB
Γopt
Mag.
Γopt
Ang.
Rn/50
Ga
dB
0.5
0.9
1.0
1.9
2.0
2.4
3.0
3.9
5.0
5.8
6.0
7.0
8.0
9.0
10.0
0.26
0.27
0.30
0.46
0.41
0.47
0.55
0.61
0.74
0.88
0.90
1.00
1.12
1.25
1.46
0.64
0.57
0.54
0.49
0.48
0.44
0.36
0.32
0.32
0.35
0.35
0.37
0.41
0.46
0.46
-4.4
7.5
11.1
36.6
40.4
50.3
69.5
101.3
139.5
161.5
163.9
-173.6
-158.2
-143.0
-127.2
0.14
0.13
0.13
0.11
0.12
0.11
0.10
0.08
0.06
0.05
0.05
0.06
0.07
0.09
0.15
23.79
21.80
21.60
18.06
17.92
16.79
15.70
14.24
12.86
12.01
11.82
10.93
10.24
9.66
8.85
40
MSG/MAG and |S21|2 (dB)
Freq
GHz
30
MSG
20
MAG
MSG
10
|S21|2
0
-10
0
5
10
15
20
FREQUENCY (GHz)
Figure 29. MSG/MAG and |S21|2 vs.
Frequency at 2.7V, 10 mA.
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of
the gate pad. The output reference plane is at the end of the drain pad.
11
ATF-551M4 Typical Scattering Parameters, VDS = 2.7V, IDS = 15 mA
Freq.
GHz
Mag.
S11
Ang.
dB
S21
Mag.
Ang.
Mag.
S12
Ang.
Mag.
S22
Ang.
MSG/MAG
dB
0.1
0.5
0.9
1.0
1.5
1.9
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
0.995
0.949
0.894
0.882
0.814
0.768
0.758
0.718
0.691
0.668
0.667
0.668
0.671
0.673
0.682
0.677
0.684
0.690
0.707
0.744
0.750
0.806
0.824
0.872
-6.5
-31.2
-54.0
-59.4
-84.0
-101.1
-105.1
-123.1
-138.7
-163.5
177.5
164.3
152.2
142.3
131.6
118.5
105.8
91.7
81.2
66.4
55.1
45.2
37.1
31.0
21.98
21.47
20.75
20.55
19.37
18.34
18.10
16.86
15.70
13.64
11.88
10.49
9.26
8.27
7.37
6.56
5.83
5.12
4.38
3.68
2.85
1.88
0.92
-0.08
12.559
11.839
10.905
10.650
9.298
8.265
8.034
6.966
6.095
4.806
3.928
3.345
2.904
2.591
2.335
2.128
1.956
1.804
1.656
1.528
1.389
1.242
1.112
0.991
175.6
156.9
142.3
138.9
123.4
112.7
110.3
99.3
89.7
73.6
59.9
48.5
37.5
27.0
16.4
5.4
-5.3
-16.7
-27.5
-39.4
-50.6
-61.2
-71.5
-81.5
0.006
0.026
0.043
0.047
0.061
0.068
0.070
0.076
0.079
0.083
0.085
0.088
0.091
0.095
0.101
0.107
0.115
0.124
0.133
0.143
0.151
0.156
0.162
0.166
86.4
71.0
60.1
57.5
46.6
39.5
38.0
31.4
26.3
19.4
15.0
13.1
11.4
10.0
8.4
5.6
2.6
-1.7
-6.1
-12.3
-18.7
-25.1
-31.6
-38.2
0.793
0.745
0.691
0.673
0.589
0.526
0.511
0.447
0.393
0.318
0.268
0.230
0.212
0.198
0.190
0.190
0.198
0.210
0.205
0.200
0.212
0.236
0.282
0.337
-3.2
-15.2
-26.4
-28.9
-39.7
-46.6
-48.1
-54.6
-59.9
-68.8
-77.7
-83.3
-93.0
-103.4
-116.2
-129.6
-142.6
-154.2
-167.8
172.5
150.9
129.7
107.9
89.7
33.21
26.58
24.04
23.55
21.83
20.85
20.60
19.62
18.87
17.63
16.65
15.80
15.04
12.89
11.88
10.70
10.06
9.46
8.93
9.10
7.85
9.01
8.37
7.76
Typical Noise Parameters, VDS = 2.7V, IDS = 15 mA
Fmin
dB
Γopt
Mag.
Γopt
Ang.
Rn/50
0.5
0.9
1.0
1.9
2.0
2.4
3.0
3.9
5.0
5.8
6.0
7.0
8.0
9.0
10.0
0.18
0.18
0.24
0.38
0.33
0.42
0.5
0.55
0.66
0.83
0.84
0.95
1.06
1.18
1.43
0.61
0.56
0.5
0.45
0.43
0.39
0.31
0.28
0.29
0.33
0.34
0.36
0.41
0.46
0.44
-6.0
6.8
10.7
36.9
41.9
50.9
73.0
107.0
146.6
168.7
170.7
-166.9
-152.3
-138.1
-122.5
0.12
0.12
0.11
0.1
0.1
0.1
0.08
0.07
0.06
0.05
0.05
0.06
0.07
0.1
0.16
Ga
dB
24.49
22.38
22.32
18.78
18.65
17.47
16.37
14.83
13.4
12.54
12.36
11.44
10.69
10.12
9.21
40
MSG/MAG and |S21|2 (dB)
Freq
GHz
30
MSG
20
MAG
MSG
10
2
|S21|
0
-10
0
5
10
15
20
FREQUENCY (GHz)
Figure 30. MSG/MAG and |S21|2 vs.
Frequency at 2.7V, 15 mA.
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of
the gate pad. The output reference plane is at the end of the drain pad.
12
ATF-551M4 Typical Scattering Parameters, VDS = 2.7V, IDS = 20 mA
Freq.
GHz
Mag.
S11
Ang.
dB
S21
Mag.
Ang.
Mag.
S12
Ang.
Mag.
S22
Ang.
MSG/MAG
dB
0.1
0.5
0.9
1.0
1.5
1.9
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
0.995
0.943
0.883
0.87
0.798
0.752
0.743
0.704
0.68
0.66
0.662
0.664
0.667
0.67
0.679
0.677
0.683
0.688
0.705
0.741
0.75
0.803
0.823
0.872
-6.8
-33.0
-56.9
-62.4
-87.6
-104.9
-108.8
-126.7
-142.1
-166.3
175.2
162.6
150.9
141.2
130.8
118.1
105.4
91.4
80.9
66.5
55.0
45.1
37.2
31.0
22.92
22.35
21.53
21.30
20.00
18.91
18.65
17.35
16.14
14.02
12.25
10.84
9.61
8.61
7.71
6.90
6.17
5.46
4.72
4.03
3.19
2.22
1.26
0.27
13.988
13.103
11.932
11.616
10.004
8.822
8.557
7.367
6.411
5.026
4.095
3.483
3.022
2.695
2.429
2.213
2.034
1.876
1.722
1.59
1.444
1.291
1.156
1.032
175.4
155.9
140.7
137.3
121.6
111.0
108.6
97.8
88.4
72.8
59.5
48.4
37.6
27.3
16.9
6.0
-4.6
-15.8
-26.5
-38.3
-49.5
-60.1
-70.3
-80.2
0.005
0.024
0.04
0.043
0.056
0.063
0.064
0.069
0.072
0.076
0.079
0.083
0.087
0.093
0.099
0.107
0.116
0.126
0.136
0.146
0.154
0.159
0.165
0.168
86.4
70.6
59.4
56.9
46.2
39.6
38.2
32.3
27.8
22.0
18.6
17.4
16.1
14.8
13.0
9.9
6.4
1.8
-3.2
-9.8
-16.5
-23.2
-29.8
-36.6
0.772
0.72
0.662
0.643
0.557
0.494
0.48
0.417
0.367
0.297
0.251
0.216
0.199
0.185
0.177
0.178
0.186
0.198
0.193
0.188
0.2
0.224
0.269
0.325
-3.4
-15.7
-27.1
-29.6
-40.2
-46.7
-48.1
-54.2
-59.0
-67.2
-75.7
-80.7
-90.4
-100.6
-113.5
-127.2
-140.4
-152.2
-165.9
173.7
151.1
129.5
107.3
88.8
34.47
27.37
24.75
24.32
22.52
21.46
21.26
20.28
19.50
18.20
17.15
16.23
14.69
13.08
12.08
11.08
10.44
9.85
9.37
9.78
8.35
9.10
8.45
7.88
Typical Noise Parameters, VDS = 2.7V, IDS = 20 mA
Fmin
dB
Γopt
Mag.
Γopt
Ang.
Rn/50
0.5
0.9
1.0
1.9
2.0
2.4
3.0
3.9
5.0
5.8
6.0
7.0
8.0
9.0
10.0
0.18
0.18
0.23
0.39
0.36
0.43
0.51
0.56
0.68
0.83
0.85
0.95
1.06
1.19
1.41
0.61
0.55
0.49
0.43
0.42
0.37
0.29
0.26
0.28
0.33
0.33
0.37
0.41
0.47
0.46
-6.7
5.9
9.9
37.8
41.6
51.7
73.6
110.7
152.8
172.9
175.6
-162.4
-148.8
-135.5
-119.2
0.12
0.11
0.10
0.09
0.09
0.09
0.08
0.07
0.05
0.05
0.05
0.06
0.08
0.10
0.17
Ga
dB
24.89
22.72
22.68
19.18
18.98
17.83
16.69
15.19
13.79
12.91
12.73
11.80
11.06
10.47
9.59
40
MSG/MAG and |S21|2 (dB)
Freq
GHz
30
MSG
20
MAG
MSG
10
2
|S21|
0
-10
0
5
10
15
20
FREQUENCY (GHz)
Figure 31. MSG/MAG and |S21|2 vs.
Frequency at 2.7V, 20 mA.
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of
the gate pad. The output reference plane is at the end of the drain pad.
13
ATF-551M4 Typical Scattering Parameters, VDS = 3V, IDS = 10 mA
Freq.
GHz
Mag.
S11
Ang.
dB
S21
Mag.
Ang.
Mag.
S12
Ang.
Mag.
S22
Ang.
MSG/MAG
dB
0.1
0.5
0.9
1.0
1.5
1.9
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
0.996
0.957
0.909
0.899
0.836
0.792
0.782
0.740
0.709
0.680
0.675
0.675
0.676
0.678
0.686
0.682
0.688
0.694
0.711
0.746
0.753
0.807
0.826
0.874
-5.9
-28.4
-49.6
-54.6
-78.1
-94.9
-98.8
-116.8
-132.8
-158.5
-178.4
167.8
155.1
144.9
133.8
120.5
107.5
93.3
82.4
67.5
55.9
45.8
37.6
31.3
20.49
20.05
19.48
19.32
18.32
17.41
17.20
16.07
14.99
13.03
11.33
9.96
8.75
7.77
6.88
6.09
5.37
4.67
3.92
3.24
2.41
1.46
0.48
-0.53
10.578
10.059
9.420
9.246
8.241
7.424
7.241
6.360
5.616
4.481
3.684
3.146
2.738
2.447
2.209
2.015
1.855
1.711
1.571
1.452
1.320
1.183
1.057
0.941
176.0
158.5
144.8
141.6
126.3
115.7
113.2
101.9
91.9
75.1
60.9
49.1
37.6
26.8
16.0
4.7
-6.3
-17.8
-28.8
-40.8
-52.4
-63.1
-73.7
-84.1
0.006
0.027
0.045
0.049
0.065
0.074
0.075
0.082
0.086
0.090
0.091
0.092
0.093
0.095
0.099
0.104
0.110
0.118
0.127
0.137
0.146
0.152
0.159
0.164
86.1
72.0
61.5
59.1
47.9
40.3
38.6
31.3
25.3
16.9
11.3
8.7
6.6
5.4
4.1
2.1
0.0
-3.4
-6.9
-12.6
-18.5
-24.5
-30.8
-37.5
0.835
0.792
0.747
0.730
0.653
0.593
0.578
0.513
0.458
0.378
0.325
0.287
0.267
0.252
0.242
0.241
0.247
0.256
0.250
0.240
0.246
0.260
0.297
0.349
-2.8
-13.4
-23.5
-25.9
-36.1
-42.7
-44.2
-50.7
-56.0
-64.9
-73.5
-79.1
-88.4
-98.6
-110.5
-122.9
-135.1
-146.5
-159.0
-176.5
163.0
142.0
119.0
98.9
32.46
25.71
23.21
22.76
21.03
20.01
19.85
18.90
18.15
16.97
16.07
15.34
14.69
12.90
11.73
10.56
9.88
9.26
8.76
8.90
7.74
8.91
8.23
7.59
Typical Noise Parameters, VDS = 3V, IDS = 10 mA
Fmin
dB
Γopt
Mag.
Γopt
Ang.
Rn/50
Ga
dB
0.5
0.9
1.0
1.9
2.0
2.4
3.0
3.9
5.0
5.8
6.0
7.0
8.0
9.0
10.0
0.23
0.24
0.26
0.43
0.38
0.43
0.51
0.59
0.70
0.85
0.86
0.98
1.09
1.23
1.45
0.65
0.58
0.54
0.50
0.48
0.44
0.36
0.31
0.32
0.35
0.35
0.36
0.41
0.45
0.44
-4.3
7.4
10.7
36.2
40.4
49.8
69.2
99.4
139.3
160.3
162.3
-173.7
-158.6
-143.7
-126.8
0.14
0.13
0.13
0.11
0.12
0.11
0.10
0.08
0.06
0.05
0.05
0.06
0.07
0.09
0.15
23.81
21.82
21.62
18.05
17.96
16.84
15.76
14.23
12.94
12.04
11.85
10.99
10.29
9.71
8.88
40
MSG/MAG and |S21|2 (dB)
Freq
GHz
30
MSG
20
MAG
MSG
10
2
|S21|
0
-10
0
5
10
15
20
FREQUENCY (GHz)
Figure 32. MSG/MAG and |S21|2 vs.
Frequency at 3V, 10 mA.
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of
the gate pad. The output reference plane is at the end of the drain pad.
14
ATF-551M4 Typical Scattering Parameters, VDS = 3V, IDS = 15 mA
Freq.
GHz
Mag.
S11
Ang.
dB
S21
Mag.
Ang.
Mag.
S12
Ang.
Mag.
S22
Ang.
MSG/MAG
dB
0.1
0.5
0.9
1.0
1.5
1.9
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
0.995
0.949
0.894
0.882
0.813
0.768
0.758
0.717
0.690
0.668
0.666
0.668
0.670
0.672
0.681
0.678
0.684
0.690
0.707
0.744
0.751
0.807
0.824
0.874
-6.5
-31.2
-54.1
-59.4
-84.0
-101.2
-105.1
-123.1
-138.7
-163.5
177.5
164.4
152.3
142.4
131.7
118.6
105.8
91.8
81.3
66.6
55.2
45.3
37.3
31.1
22.02
21.51
20.79
20.59
19.41
18.38
18.14
16.90
15.74
13.68
11.93
10.53
9.31
8.32
7.43
6.62
5.89
5.19
4.44
3.75
2.93
1.97
1.01
0.02
12.623
11.900
10.958
10.701
9.341
8.301
8.068
6.996
6.120
4.829
3.947
3.363
2.921
2.607
2.351
2.142
1.970
1.817
1.667
1.540
1.401
1.254
1.123
1.002
175.6
156.9
142.3
138.9
123.3
112.7
110.3
99.2
89.7
73.6
59.9
48.5
37.5
27.0
16.4
5.3
-5.5
-16.8
-27.6
-39.5
-50.7
-61.4
-71.9
-82.0
0.005
0.025
0.041
0.045
0.059
0.066
0.067
0.073
0.076
0.080
0.082
0.084
0.087
0.092
0.098
0.104
0.113
0.122
0.132
0.142
0.151
0.157
0.163
0.167
86.0
71.0
60.1
57.6
46.7
39.7
38.1
31.6
26.7
20.0
15.8
14.2
12.9
11.8
10.4
7.8
4.9
0.7
-3.7
-10.0
-16.4
-22.8
-29.5
-36.2
0.802
0.754
0.700
0.682
0.599
0.537
0.522
0.459
0.407
0.334
0.286
0.250
0.232
0.218
0.209
0.209
0.215
0.226
0.221
0.211
0.218
0.236
0.277
0.330
-3.1
-14.6
-25.4
-27.8
-38.1
-44.5
-45.9
-52.0
-56.9
-65.0
-73.3
-78.4
-87.6
-97.7
-110.0
-122.9
-135.4
-147.1
-160.3
-179.5
159.7
137.8
114.5
95.0
34.02
26.78
24.27
23.76
22.00
21.00
20.81
19.82
19.06
17.81
16.82
16.02
14.96
12.99
12.01
10.90
10.28
9.70
9.23
9.62
8.26
9.02
8.38
7.78
Typical Noise Parameters, VDS = 3V, IDS = 15 mA
Fmin
dB
Γopt
Mag.
Γopt
Ang.
Rn/50
Ga
dB
0.5
0.9
1.0
1.9
2.0
2.4
3.0
3.9
5.0
5.8
6.0
7.0
8.0
9.0
10.0
0.18
0.19
0.23
0.39
0.35
0.42
0.49
0.56
0.66
0.83
0.84
0.94
1.05
1.19
1.40
0.63
0.56
0.51
0.46
0.44
0.39
0.31
0.27
0.29
0.33
0.33
0.35
0.40
0.46
0.44
-6.3
6.8
10.0
36.5
40.8
50.1
72.5
104.4
146.9
167.4
169.0
-166.9
-152.7
-138.6
-121.9
0.12
0.12
0.11
0.10
0.10
0.10
0.08
0.07
0.06
0.05
0.05
0.06
0.07
0.09
0.16
24.41
22.45
22.29
18.75
18.61
17.46
16.42
14.80
13.48
12.58
12.38
11.49
10.77
10.23
9.32
40
MSG/MAG and |S21|2 (dB)
Freq
GHz
30
MSG
20
MAG
MSG
10
2
|S21|
0
-10
0
5
10
15
20
FREQUENCY (GHz)
Figure 33. MSG/MAG and |S21|2 vs.
Frequency at 3V, 15 mA.
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of
the gate pad. The output reference plane is at the end of the drain pad.
15
ATF-551M4 Typical Scattering Parameters, VDS = 3V, IDS = 20 mA
Freq.
GHz
Mag.
S11
Ang.
dB
S21
Mag.
Ang.
Mag.
S12
Ang.
Mag.
S22
Ang.
MSG/MAG
dB
0.1
0.5
0.9
1.0
1.5
1.9
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
0.995
0.943
0.883
0.870
0.798
0.752
0.743
0.704
0.679
0.660
0.662
0.664
0.667
0.670
0.679
0.677
0.683
0.689
0.705
0.742
0.751
0.806
0.826
0.874
-6.8
-33.0
-56.9
-62.4
-87.6
-104.9
-108.9
-126.7
-142.1
-166.3
175.3
162.6
150.9
141.3
130.9
118.1
105.4
91.4
80.9
66.4
55.0
45.1
37.2
31.1
22.91
22.35
21.53
21.30
20.00
18.91
18.64
17.35
16.14
14.03
12.25
10.85
9.62
8.63
7.73
6.92
6.19
5.49
4.75
4.05
3.23
2.27
1.32
0.33
13.987
13.101
11.932
11.614
10.004
8.820
8.555
7.368
6.412
5.028
4.099
3.488
3.027
2.701
2.435
2.219
2.040
1.881
1.727
1.594
1.451
1.298
1.164
1.039
175.4
155.8
140.7
137.2
121.5
111.0
108.6
97.7
88.4
72.7
59.4
48.3
37.5
27.2
16.8
5.9
-4.8
-16.0
-26.8
-38.6
-49.8
-60.4
-70.8
-80.8
0.005
0.024
0.039
0.042
0.054
0.061
0.062
0.067
0.070
0.074
0.076
0.080
0.084
0.090
0.096
0.104
0.114
0.124
0.134
0.145
0.153
0.159
0.165
0.170
86.1
70.5
59.5
56.9
46.3
39.7
38.3
32.4
28.1
22.5
19.2
18.3
17.2
16.3
14.6
11.7
8.4
3.8
-1.0
-7.7
-14.4
-21.1
-27.9
-34.9
0.781
0.730
0.672
0.654
0.569
0.506
0.493
0.431
0.383
0.314
0.270
0.237
0.220
0.207
0.198
0.198
0.205
0.216
0.210
0.199
0.207
0.225
0.265
0.320
-3.3
-15.2
-26.1
-28.5
-38.5
-44.6
-46.0
-51.6
-56.0
-63.5
-71.5
-76.2
-85.2
-95.2
-107.6
-120.6
-133.4
-145.2
-158.4
-178.0
160.3
138.1
114.0
94.1
34.47
27.37
24.86
24.42
22.68
21.60
21.40
20.41
19.62
18.32
17.32
16.39
14.66
13.18
12.20
11.21
10.64
10.10
9.62
10.41
8.80
9.12
8.48
7.86
Typical Noise Parameters, VDS = 3V, IDS = 20 mA
Fmin
dB
Γopt
Mag.
Γopt
Ang.
Rn/50
Ga
dB
0.5
0.9
1.0
1.9
2.0
2.4
3.0
3.9
5.0
5.8
6.0
7.0
8.0
9.0
10.0
0.17
0.18
0.24
0.39
0.36
0.42
0.50
0.57
0.68
0.83
0.85
0.93
1.05
1.19
1.39
0.62
0.55
0.50
0.43
0.41
0.37
0.29
0.25
0.28
0.32
0.33
0.36
0.41
0.46
0.45
-6.2
6.0
9.5
37.5
41.2
50.9
73.6
109.4
151.6
172.5
175.6
-162.7
-149.1
-135.5
-119.4
0.12
0.11
0.10
0.10
0.09
0.09
0.08
0.07
0.06
0.05
0.05
0.06
0.08
0.10
0.17
24.92
22.79
22.59
19.22
19.00
17.83
16.72
15.18
13.80
12.93
12.77
11.84
11.09
10.53
9.64
40
MSG/MAG and |S21|2 (dB)
Freq
GHz
30
MSG
20
MAG
MSG
10
MSG
MAG
2
|S21|
0
-10
0
5
10
15
20
FREQUENCY (GHz)
Figure 34. MSG/MAG and |S21|2 vs.
Frequency at 3V, 20 mA.
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of
the gate pad. The output reference plane is at the end of the drain pad.
16
ATF-551M4 Typical Scattering Parameters, VDS = 3V, IDS = 30 mA
Freq.
GHz
Mag.
S11
Ang.
dB
S21
Mag.
Ang.
Mag.
S12
Ang.
Mag.
S22
Ang.
MSG/MAG
dB
0.1
0.5
0.9
1.0
1.5
1.9
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
0.994
0.936
0.870
0.856
0.781
0.736
0.726
0.690
0.668
0.653
0.656
0.659
0.663
0.666
0.676
0.674
0.680
0.688
0.705
0.743
0.751
0.806
0.826
0.875
-7.4
-35.3
-60.4
-66.1
-92.0
-109.4
-113.3
-131.0
-146.1
-169.6
172.7
160.5
149.0
139.6
129.3
116.6
104.1
90.3
80.1
65.8
54.5
44.9
37.0
31.0
23.90
23.25
22.32
22.05
20.61
19.44
19.15
17.79
16.54
14.38
12.58
11.17
9.93
8.94
8.03
7.22
6.48
5.77
5.03
4.34
3.53
2.56
1.64
0.67
15.662
14.544
13.058
12.665
10.732
9.374
9.072
7.753
6.713
5.234
4.258
3.618
3.138
2.798
2.522
2.296
2.109
1.944
1.784
1.648
1.502
1.343
1.208
1.080
175.0
154.5
138.7
135.2
119.4
108.9
106.6
96.0
86.9
71.7
58.7
47.9
37.2
27.1
16.8
5.9
-4.6
-15.8
-26.4
-38.0
-49.2
-59.8
-70.1
-80.2
0.005
0.022
0.035
0.038
0.048
0.054
0.055
0.059
0.062
0.066
0.069
0.074
0.079
0.086
0.094
0.103
0.113
0.124
0.135
0.147
0.156
0.162
0.168
0.174
86.1
69.8
58.7
56.2
46.0
40.1
38.8
33.7
30.3
26.1
23.8
23.6
22.9
21.9
20.1
16.9
13.1
8.0
3.0
-4.1
-11.1
-18.1
-25.2
-32.4
0.760
0.705
0.644
0.624
0.539
0.480
0.467
0.410
0.367
0.307
0.268
0.238
0.224
0.211
0.203
0.202
0.208
0.219
0.213
0.200
0.203
0.218
0.254
0.306
-3.4
-15.4
-26.2
-28.5
-37.7
-43.1
-44.2
-49.0
-52.7
-59.2
-66.7
-70.9
-79.8
-89.5
-101.5
-114.5
-127.3
-139.4
-152.3
-170.8
166.8
143.9
118.4
97.4
34.96
28.20
25.72
25.23
23.49
22.40
22.17
21.19
20.35
18.99
17.90
16.89
14.61
13.35
12.55
11.58
11.01
10.62
10.38
10.50
9.84
9.19
8.57
7.93
Typical Noise Parameters, VDS = 3V, IDS = 30 mA
Fmin
dB
Γopt
Mag.
Γopt
Ang.
Rn/50
Ga
dB
0.5
0.9
1.0
1.9
2.0
2.4
3.0
3.9
5.0
5.8
6.0
7.0
8.0
9.0
10.0
0.16
0.18
0.24
0.39
0.36
0.45
0.52
0.59
0.71
0.86
0.89
0.99
1.12
1.26
1.50
0.60
0.55
0.47
0.39
0.38
0.33
0.26
0.23
0.28
0.33
0.33
0.37
0.42
0.48
0.46
-6.2
6.4
10.1
39.1
42.7
54.2
79.0
119.0
162.1
-179.3
-176.7
-156.1
-143.5
-130.8
-115.1
0.11
0.11
0.10
0.09
0.09
0.09
0.08
0.06
0.05
0.05
0.05
0.07
0.09
0.12
0.20
25.60
23.17
23.19
19.73
19.48
18.36
17.20
15.66
14.28
13.39
13.20
12.27
11.50
10.96
10.01
40
MSG/MAG and |S21|2 (dB)
Freq
GHz
30
MSG
20
MAG
MSG
10
|S21|2
0
-10
0
5
10
15
20
FREQUENCY (GHz)
Figure 35. MSG/MAG and |S21|2 vs.
Frequency at 3V, 30 mA.
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of
the gate pad. The output reference plane is at the end of the drain pad.
17
S and Noise Parameter Measurements
The position of the reference
planes used for the measurement
of both S and Noise Parameter
measurements is shown in Figure
36. The reference plane can be
described as being at the center
of both the gate and drain pads.
S and noise parameters are
measured with a 50 ohm
microstrip test fixture made with
a 0.010" thickness aluminum
substrate. Both source pads are
connected directly to ground via
a 0.010" thickness metal rib
which provides a very low
inductance path to ground for
both source pads. The inductance
associated with the addition of
printed circuit board plated
through holes and source bypass
capacitors must be added to the
computer circuit simulation to
properly model the effect of
grounding the source leads in a
typical amplifier design.
Reference
Plane
Source
Pin 3
Drain
Pin 4
Vx
Source
Pin 1
Gate
Pin 2
Microstrip
Transmission Lines
Figure 36. Position of the Reference Planes.
Noise Parameter Applications
Information
The Fmin values are based on a
set of 16 noise figure measurements made at 16 different
impedances using an ATN NP5
test system. From these measurements, a true Fmin is calculated.
Fmin represents the true minimum noise figure of the device
when the device is presented
with an impedance matching
network that transforms the
18
source impedance, typically 50Ω,
to an impedance represented by
the reflection coefficient Γo. The
designer must design a matching
network that will present Γo to
the device with minimal associated circuit losses. The noise
figure of the completed amplifier
is equal to the noise figure of the
device plus the losses of the
matching network preceding the
device. The noise figure of the
device is equal to Fmin only
when the device is presented
with Γo. If the reflection coefficient of the matching network is
other than Γo, then the noise
figure of the device will be
greater than Fmin based on the
following equation.
NF = Fmin + 4 Rn
|Γs – Γo | 2
Zo (|1 + Γo| 2) (1 - |Γs| 2)
Where Rn/Zo is the normalized
noise resistance, Γo is the optimum reflection coefficient
required to produce Fmin and Γs
is the reflection coefficient of the
source impedance actually
presented to the device.
The losses of the matching
networks are non-zero and they
will also add to the noise figure
of the device creating a higher
amplifier noise figure. The losses
of the matching networks are
related to the Q of the components and associated printed
circuit board loss. Γo is typically
fairly low at higher frequencies
and increases as frequency is
lowered. Larger gate width
devices will typically have a
lower Γo as compared to narrower gate width devices. Typically for FETs , the higher Γo
usually infers that an impedance
much higher than 50Ω is required for the device to produce
Fmin. At VHF frequencies and
even lower L Band frequencies,
the required impedance can be in
the vicinity of several thousand
ohms. Matching to such a high
impedance requires very hi-Q
components in order to minimize
circuit losses. As an example at
900 MHz, when air wound coils
(Q>100)are used for matching
networks, the loss can still be up
to 0.25 dB which will add directly to the noise figure of the
device. Using muiltilayer molded
inductors with Qs in the 30 to 50
range results in additional loss
over the air wound coil. Losses as
high as 0.5 dB or greater add to
the typical 0.15 dB Fmin of the
device creating an amplifier
noise figure of nearly 0.65 dB.
SMT Assembly
The package can be soldered
using either lead-bearing or leadfree alloys (higher peak temperatures). Reliable assembly of
surface mount components is a
complex process that involves
many material, process, and
equipment factors, including:
method of heating (e.g. IR or
vapor phase reflow, wave soldering, etc) circuit board material,
conductor thickness and pattern,
type of solder alloy, and the
thermal conductivity and thermal mass of components. Components with a low mass, such as
the Minipak 1412 package, will
reach solder reflow temperatures
faster than those with a greater
mass.
The recommended leaded solder
time-temperature profile is
shown in Figure 37. This profile
is representative of an IR reflow
type of surface mount assembly
process. After ramping up from
room temperature, the circuit
board with components attached
to it (held in place with solder
paste) passes through one or
more preheat zones. The preheat
zones increase the temperature
of the board and components to
prevent thermal shock and begin
evaporating solvents from the
solder paste. The reflow zone
briefly elevates the temperature
sufficiently to produce a reflow
of the solder.
The recommended lead-free
reflow profile is shown in Figure 38.
The rates of change of temperature for the ramp-up and cooldown zones are chosen to be low
enough to not cause deformation
of board or damage to components due to thermal shock. The
maximum temperature in the
reflow zone (Tmax) should not
exceed 235°C for leaded solder.
Electrostatic Sensitivity
FETs and RFICs are electrostatic
discharge (ESD) sensitive devices. Agilent devices are manufactured using a very robust and
reliable PHEMT process, however,
permanent damage may occur to
these devices if they are subjected to high-energy electrostatic
discharges. Electrostatic charges
as high as several thousand volts
(which readily accumulate on the
human body and on test equipment) can discharge without
detection and may result in
failure or degradation in performance and reliability.
These parameters are typical for
a surface mount assembly
process for the ATF-551M4. As a
general guideline, the circuit
board and components should
only be exposed to the minimum
temperatures and times the
necessary to achieve a uniform
reflow of solder.
Electronic devices may be
subjected to ESD damage in any
of the following areas:
250
TMAX
TEMPERATURE (°C)
200
150
Reflow
Zone
100
Preheat
Zone
Cool Down
Zone
50
0
0
60
120
180
240
•
•
•
•
Storage & handling
Inspection
Assembly & testing
In-circuit use
The ATF-551M4 is an ESD Class 1
device. Therefore, proper ESD
precautions are recommended
when handling, inspecting,
testing, and assembling these
devices to avoid damage.
Any user-accessible points in
wireless equipment (e.g. antenna
or battery terminals) provide an
opportunity for ESD damage.
For circuit applications in which
the ATF-551M4 is used as an
input or output stage with close
coupling to an external antenna,
the device should be protected
from high voltage spikes due to
human contact with the antenna.
A good practice, illustrated in
Figure 39, is to place a shunt
inductor or RF choke at the
antenna connection to protect
the receiver and transmitter
circuits. It is often advantageous
to integrate the RF choke into the
design of the diplexer or T/R
switch control circuitry.
300
TIME (seconds)
Figure 37. Leaded Solder Reflow Profile.
350
Peak Temperature
Min. 240°C
Max. 255°C
TEMPERATURE (°C)
300
250
221
150
100
Preheat 130 – 170°C
Min. 60s
Max. 150s
50
0
0
30
60
90
120
150
180
210
TIME (seconds)
Figure 38. Lead-free Solder Reflow Profile.
19
Figure 39. In-circuit ESD Protection.
Reflow Time
Min. 60s
Max. 90s
200
240
270
300
330
360
ATF-551M4 Applications
Information
from the standpoint of improving
out-of-band rejection.
Introduction
Agilent Technologies’s
ATF-551M4 is a low noise
enhancement mode PHEMT
designed for use in low cost
commercial applications in the
VHF through 10 GHz frequency
range. As opposed to a typical
depletion mode PHEMT where the
gate must be made negative with
respect to the source for proper
operation, an enhancement mode
PHEMT requires that the gate be
made more positive than the
source for normal operation.
Therefore a negative power
supply voltage is not required for
an enhancement mode device.
Biasing an enhancement mode
PHEMT is much like biasing the
typical bipolar junction transistor.
Instead of a 0.7V base to emitter
voltage, the ATF-551M4 enhancement mode PHEMT requires a
nominal 0.47V potential between
the gate and source for a nominal
drain current of 10 mA.
Capacitors C2 and C5 provide a
low impedance in-band RF
bypass for the matching networks. Resistors R3 and R4
provide a very important low
frequency termination for the
device. The resistive termination
improves low frequency stability.
Capacitors C3 and C6 provide
the RF bypass for resistors R3
and R4. Their value should be
chosen carefully as C3 and C6
also provide a termination for
low frequency mixing products.
These mixing products are as a
result of two or more in-band
signals mixing and producing
third order in-band distortion
products. The low frequency or
difference mixing products are
terminated by C3 and C6. For
best suppression of third order
distortion products based on the
CDMA 1.25 MHz signal spacing,
C3 and C6 should be 0.1 uF in
value. Smaller values of capacitance will not suppress the
generation of the 1.25 MHz
difference signal and as a result
will show up as poorer two tone
IP3 results.
Matching Networks
The techniques for impedance
matching an enhancement mode
device are very similar to those for
matching a depletion mode device.
The only difference is in the
method of supplying gate bias. S
and Noise Parameters for various
bias conditions are listed in this
data sheet. The circuit shown in
Figure 1 shows a typical LNA
circuit normally used for 900 and
1900 MHz applications. Consult
the Agilent Technologies web site
for application notes covering
specific designs and applications.
High pass impedance matching
networks consisting of L1/C1 and
L4/C4 provide the appropriate
match for noise figure, gain, S11
and S22. The high pass structure
also provides low frequency gain
reduction which can be beneficial
20
C4
C1
INPUT
Q1
Zo
L1
L4
L2
R4
OUTPUT
Zo
L3
C2
C5
R3
R5
R1
C3
C6
R2
Vdd
Figure 1. Typical ATF-551M4 LNA with Passive
Biasing.
Bias Networks
One of the major advantages of
the enhancement mode technology is that it allows the designer
to be able to dc ground the
source leads and then merely
apply a positive voltage on the
gate to set the desired amount of
quiescent drain current Id.
Whereas a depletion mode
PHEMT pulls maximum drain
current when Vgs = 0V, an enhancement mode PHEMT pulls
only a small amount of leakage
current when Vgs = 0V. Only when
Vgs is increased above Vth, the
device threshold voltage, will
drain current start to flow. At a
Vds of 2.7V and a nominal Vgs of
0.47V, the drain current Id will be
approximately 10 mA. The data
sheet suggests a minimum and
maximum Vgs over which the
desired amount of drain current
will be achieved. It is also important to note that if the gate
terminal is left open circuited,
the device will pull some amount
of drain current due to leakage
current creating a voltage differential between the gate and
source terminals.
Passive Biasing
Passive biasing of the ATF-551M4
is accomplished by the use of a
voltage divider consisting of R1
and R2. The voltage for the
divider is derived from the drain
voltage which provides a form of
voltage feedback through the use
of R3 to help keep drain current
constant. In the case of a typical
depletion mode FET, the voltage
divider which is normally connected to a negative voltage
source is connected to the gate
through resistor R4. Additional
resistance in the form of R5
(approximately 10KΩ) is added
to provide current limiting for
the gate of enhancement mode
devices such as the ATF-551M4.
This is especially important
when the device is driven to
P1dB or Psat.
Resistor R3 is calculated based
on desired Vds , Ids and available
power supply voltage.
R3 =
VDD – Vds
Ids + IBB
C4
C1
INPUT
(1)
Zo
L1
The value of resistors R1 and R2
are calculated with the following
formulas.
R1 =
R2 =
Vgs
IBB
(2)
p
(Vds – Vgs) R1
Vgs
(3)
p
Example Circuit
VDD = 3V
Vds = 2.7V
Ids = 10 mA
Vgs = 0.47V
Choose IBB to be at least 10X the
maximum expected gate leakage
current. IBB was conservatively
chosen to be 0.5 mA for this
example. Using equations (1), (2),
and (3) the resistors are calculated as follows
R1 = 940Ω
R2 = 4460Ω
R3 = 28.6Ω
Active Biasing
Active biasing provides a means
of keeping the quiescent bias
point constant over temperature
and constant over lot to lot
variations in device dc performance. The advantage of the
active biasing of an enhancement
mode PHEMT versus a depletion
mode PHEMT is that a negative
power source is not required. The
techniques of active biasing an
enhancement mode device are
very similar to those used to bias
a bipolar junction transistor.
An active bias scheme is shown
in Figure 2.
21
R5
L3
C2
C5
R4
C3
R6
C7
C6
Q2
Vdd
R7
R3
R2
R1
Figure 2. Typical ATF-551M4 LNA with Active
Biasing.
R1 and R2 provide a constant
voltage source at the base of a
PNP transistor at Q2. The constant voltage at the base of Q2 is
raised by 0.7 volts at the emitter.
The constant emitter voltage plus
the regulated VDD supply are
present across resistor R3.
Constant voltage across R3
provides a constant current
supply for the drain current.
Resistors R1 and R2 are used to
set the desired Vds. The combined
series value of these resistors also
sets the amount of extra current
consumed by the bias network.
The equations that describe the
circuit’s operation are as follows.
VE = Vds + (Ids • R4)
(1)
VDD – VE
Ids
(2)
R3 =
p
VB = VE – VBE
(3)
R1
V
R1 + R2 DD
(4)
VDD = IBB (R1 + R2)
(5)
VB =
Equation (1) calculates the
required voltage at the emitter o
the PNP transistor based o
desired Vds and Ids throug
resistor R4 to be 2.8V. Equation
(2) calculates the value of resistor
R3 which determines the drain
current Ids. In the example
R3=18.2Ω. Equation (3) calculates
the voltage required at the junction of resistors R1 and R2. This
voltage plus the step-up of the
base emitter junction determines
the regulated Vds. Equations (4)
and (5) are solved simultaneously
to determine the value of resistors
R1 and R2. In the example
R1=4200Ω and R2 =1800Ω.
R7 is chosen to be 1 kΩ. This
resistor keeps a small amount of
current flowing through Q2 to help
maintain bias stability. R6 is
chosen to be 10 KΩ. This value of
resistance is high enough to limit
Q1 gate current in the presence of
high RF drive levels as experienced when Q1 is driven to the
P1dB gain compression point. C7
provides a low frequency bypass to
keep noise from Q2 effecting the
operation of Q1. C7 is typically
0.1 µF.
p
Rearranging equation (4)
provides the following formula
R2 =
Example Circuit
VDD = 3 V
Vds = 2.7 V
Ids = 10 mA
R4 = 10Ω
VBE = 0.7 V
L4
L2
VDD is the power supply voltage.
Vds is the device drain to source
voltage.
Ids is the desired drain current.
IBB is the current flowing
through the R1/R2 resistor
voltage divider network.
OUTPUT
Q1
Zo
p
R1 (VDD – VB)
VB
(4A)
p
and rearranging equation (5)
provides the follow formula
R1 =
IBB
(
VDD
V – VB
1 + DD
VB
9
)
p
(5A)
Maximum Suggested Gate Current
The maximum suggested gate
current for the ATF-551M4 is
1 mA. Incorporating resistor R5
in the passive bias network or
resistor R6 in the active bias
network safely limits gate current
to 500 µA at P1dB drive levels.
In order to minimize component
count in the passive biased
amplifier circuit, the 3 resistor
bias circuit consisting of R1, R2,
and R5 can be simplified if
desired. R5 can be removed if R1
is replaced with a 5.6KΩ resistor
and if R2 is replaced with a 27KΩ
resistor. This combination should
limit gate current to a safe level.
0.4
0.016
0.3
0.012
0.5
0.020
1.1
0.043
PCB Layout
A suggested PCB pad print for
the miniature, Minipak 1412
package used by the ATF-551M4
is shown in Figure 3.
0.3
0.012
0.4
0.016
0.5
0.020
Figure 3. PCB Pad Print for Minipak 1412.
Package (mm [inches ]).
ATF-551M4 Die Model
Advanced_Curtice2_Model
MESFETM1
NFET=yes
Rf=
PFET=no
Gscap=2
Vto=0.3
Cgs=0.6193 pF
Beta=0.444
Cgd=0.1435 pF
Lambda=72e-3
Gdcap=2
Alpha=13
Fc=0.65
Tau=
Rgd=0.5 Ohm
Tnom=16.85
Rd=2.025 Ohm
Idstc=
Rg=1.7 Ohm
Ucrit=-0.72
Vgexp=1.91
Rs=0.675 Ohm
Gamds=1e-4
Ld=
Vtotc=
Lg=0.094 nH
Betatce=
Ls=
Rgs=0.5 Ohm
Cds=0.100 pF
Rc=390 Ohm
Crf=0.1 F
Gsfwd=
Gsrev=
Gdfwd=
Gdrev=
R1=
R2=
Vbi=0.95
Vbr=
Vjr=
Is=
Ir=
Imax=
Xti=
Eg=
N=
Fnc=1 MHz
R=0.08
P=0.2
C=0.1
Taumdl=no
wVgfwd=
wBvgs=
wBvgd=
wBvds=
wldsmax=
wPmax=
AllParams=
This pad print provides allowance for package placement by
automated assembly equipment
without adding excessive
parasitics that could impair the
high frequency performance of
the ATF-551M4. The layout is
shown with a footprint of the
ATF-551M4 superimposed on the
PCB pads for reference.
For Further Information
The information presented here is
an introduction to the use of the
ATF-551M4 enhancement mode
PHEMT. More detailed application
circuit information is available
from Agilent Technologies. Consult
the web page or your local Agilent
Technologies sales representative.
ATF-551M4 Minipak Model
INSIDE Package
Var VAR
Egn VAR1
K=5
Z2=85
Z1=30
GATE
Port
G
Num=1
C
C1
C=0.28 pF
TLINP
TL3
Z=Z2 Ohm
L=23.6 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
TLINP
TL1
Z=Z2/2 Ohm
L=22 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
TLINP
TL2
Z=Z2/2 Ohm
L=20 0 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
L
L6
L=0.147 nH
R=0.001
L
L1
L=0.234 nH
R=0.001
GaAsFET
FET1
Mode1=MESFETM1
Mode=Nonlinear
C
C2
C=0.046 pF
SOURCE
Port
S1
Num=2
22
TLINP
TL9
Z=Z2 Ohm
L=11 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
L
L4
L=0.281 nH
R=0.001
MSub
MSUB
MSub2
H=25.0 mil
Er=9.6
Mur=1
Cond=1.0E+50
Hu=3.9e+034 mil
T=0.15 mil
TanD=0
Rough=0 mil
L
L7
L=0.234 nH
R=0.001
SOURCE
TLINP
TL7
Z=Z2/2 Ohm
L=5.2 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
TLINP
TL5
Z=Z2 Ohm
L=27.5 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
Port
S2
Num=4
DRAIN
Port
D
Num=3
Ordering Information
Part Number
No. of Devices
Container
ATF-551M4-TR1
3000
7” Reel
ATF-551M4-TR2
10,000
13” Reel
ATF-551M4-BLK
100
antistatic bag
MiniPak Package Outline Drawing
Solder Pad Dimensions
1.44 (0.058)
1.40 (0.056)
3
4
Vx
1.20 (0.048)
1.16 (0.046)
2
1
1.12 (0.045)
1.08 (0.043)
0.82 (0.033)
0.78 (0.031)
0.32 (0.013)
0.28 (0.011)
0.00
Top view
0.00
-0.07 (-0.003)
-0.03 (-0.001)
0.70 (0.028)
0.58 (0.023)
Side view
Dimensions are in millimeteres (inches)
23
0.92 (0.037)
0.88 (0.035)
0.42 (0.017)
1.32 (0.053)
0.38 (0.015)
1.28 (0.051)
Bottom view
-0.07 (-0.003)
-0.03 (-0.001)
Device Orientation for Outline 4T, MiniPak 1412
REEL
TOP VIEW
END VIEW
4 mm
CARRIER
TAPE
Vx
Vx
Vx
Vx
8 mm
USER
FEED
DIRECTION
Note: Vx represents Package Marking Code.
Device orientation is indicated by package marking.
COVER TAPE
Tape Dimensions
P
P2
D
P0
E
F
W
C
B0
A0
D1
t1 (CARRIER TAPE THICKNESS)
K0
5° MAX.
A0
DESCRIPTION
Tt (COVER TAPE THICKNESS)
5° MAX.
B0
SYMBOL
SIZE (mm)
SIZE (INCHES)
CAVITY
LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER
A0
B0
K0
P
D1
1.40 ± 0.05
1.53 ± 0.05
0.80 ± 0.05
4.00 ± 0.10
0.80 ± 0.05
0.055 ± 0.002
0.064 ± 0.002
0.031 ± 0.002
0.157 ± 0.004
0.031 ± 0.002
PERFORATION
DIAMETER
PITCH
POSITION
D
P0
E
1.50 ± 0.10
4.00 ± 0.10
1.75 ± 0.10
0.060 ± 0.004
0.157 ± 0.004
0.069 ± 0.004
CARRIER TAPE
WIDTH
THICKNESS
W
t1
8.00 + 0.30 - 0.10
0.254 ± 0.02
0.315 + 0.012 - 0.004
0.010 ± 0.0008
COVER TAPE
WIDTH
TAPE THICKNESS
C
Tt
5.40 ± 0.10
0.062 ± 0.001
0.213 ± 0.004
0.0024 ± 0.00004
DISTANCE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
F
3.50 ± 0.05
0.138 ± 0.002
CAVITY TO PERFORATION
(LENGTH DIRECTION)
P2
2.00 ± 0.05
0.079 ± 0.002
For product information and a complete list of Agilent
contacts and distributors, please go to our web site.
www.agilent.com/semiconductors
E-mail: SemiconductorSupport@agilent.com
Data subject to change.
Copyright © 2004 Agilent Technologies, Inc.
Obsoletes 5988-4455EN
July 16, 2004
5988-9006EN