ETC MBR20200

LTO-DMS Semiconductor Corporation
LTO-DMS
1468, 86th Street, Brooklyn
New York, 11228, USA
Tel: (718) 234 6010 / (707) 3223 4679
MBR20100 thru MBR20200
Fax:(718) 234 6013 / (707) 3223 6696
20 Amp HT Power Schottky Barrier Rectifier
100 Volts to 200 Volts
Features
* High Junction Temperature Capability
* Low Leakage Current and Low Forward Voltage Drop
* Low Power Loss and High Efficiency
Maximum Ratings
TO-220AC
* Operating Junction Temperature: 150°C
* Storage Temperature: - 55 °C to +175°C
* Per diode Thermal Resistance 2.2°C/W Junction to Case
Mechanical Data
* Case: Molded Plastic
DIMENSIONS
* Terminals: Plated Lead Solderable per
MIN
0.560
0.380
0.100
0.230
0.380
-----0.500
0.190
0.020
0.012
0.139
0.140
0.045
0.080
A
B
C
D
E
F
G
H
I
J
K
L
M
N
MIL-STD-202, Method 208
* Marking:Type Number
* Weight: 2.24 grams (approx)
Symbol
INCHES
DIM
Characteristics
MM
MAX
0.625
0.420
0.135
0.270
0.420
0.250
0.580
0.210
0.045
0.025
0.161
0.190
0.055
0.115
MIN
14.22
9.65
2.54
5.84
9.65
----12.70
4.83
0.51
0.30
3.53
3.56
1.14
2.03
MAX
15.88
10.67
3.43
6.86
10.67
6.35
14.73
5.33
1.14
0.64
4.09
4.83
1.40
2.92
NOTE
MBR20100
MBR20150
MBR20200
Unit
VRRM
Maximum Recurrent Peak Reverse Voltage
100
150
200
V
VRM
Maximum DC Blocking Voltage
100
150
200
V
70
105
140
V
0.95
V
VR(RMS)
VF
IF(AV)
IFSM
dv/dt
IR
RthJC
Maximum RMS Voltage
Maximum Forward Voltage Drop Per Element
IF=20A @TJ=25°C
0.90
Average Forward Current
8.3ms Single Half-Sine-Wave
Superimposed On Rated Load
Voltage Rate Of Change (Rated VR)
20
A
150
A
10000
V/us
Maximum DC Reverse Current
TJ=25°C
0.2
At Rated DC Blocking Voltage
TJ=125°C
40
Typical Thermal Resistance (Note 2)
mA
2.0
°C/ W
400
pF
CJ
Typical Junction Capacitance (Note 3)
TJ
Operating Temperature Range
-55to+150
°C
Storage Temperature Range
-55to+175
°C
TSTG
NOTES: 1. 300us Pulse Width, Duty Cycle 2%.
2. Thermal Resistance Junction To Case.
3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
Revision: 1
2002/06/17