LTO-DMS Semiconductor Corporation LTO-DMS 1468, 86th Street, Brooklyn New York, 11228, USA Tel: (718) 234 6010 / (707) 3223 4679 MBR30100CT thru MBR30200CT Fax:(718) 234 6013 / (707) 3223 6696 30 Amp HT Power Schottky Barrier Rectifier 100 Volts to 200 Volts Features * High Junction Temperature Capability * Low Leakage Current and Low Forward Voltage Drop * Low Power Loss and High Efficiency Maximum Ratings TO-220AB * Operating Junction Temperature: 150°C * Storage Temperature: - 55 °C to +175°C * Per diode Thermal Resistance 2.2°C/W Junction to Case Mechanical Data * Case: Molded Plastic DIMENSIONS * Terminals: Plated Lead Solderable per A B C D E F G H I J K L M N MIL-STD-202, Method 208 * Marking:Type Number * Weight: 2.24 grams (approx) Symbol VRRM VRM VR(RMS) VF IF(AV) IFSM dv/dt IR RthJC Characteristics INCHES MIN 0.570 0.380 0.100 0.235 0.335 0.110 0.500 0.095 0.025 0.016 0.142 0.160 0.045 0.102 typ DIM MAX 0.620. 0.405 0.120 0.255 0.365 0.155 0.562 0.105 0.035 0.025 0.147 0.190 0.055 MM MIN 14.4 9.66 2.54 5.97 8.51 2.80 12.7 2.42 0.64 0.41 3.61 4.06 1.14 2.6 typ MAX 15.75 10.28 3.04 6.48 9.27 3.93 14.27 2.66 0.89 0.64 3.37 4.82 1.39 NO TE MBR30100CT MBR30150CT MBR30200CT Unit Maximum Recurrent Peak Reverse Voltage 100 150 200 V Maximum DC Blocking Voltage 100 150 200 V 70 105 140 V 0.95 V Maximum RMS Voltage Maximum Forward Voltage (Note 1) IF=15.0A @TJ=25°C 0.90 Average Forward Current per leg 8.3ms Single Half-Sine-Wave Peak Forward Surge Current Voltage Rate Of Change (Rated VR) 15 A 150 A 10000 V/us Maximum DC Reverse Current @TJ=25°C 0.2 At Rated DC Blocking Voltage @TJ=125°C 40 Typical Thermal Resistance (Note 2) 2.0 °C/ W CJ Typical Junction Capacitance (Note 3) TJ Operating Temperature Range -55to+150 °C Storage Temperature Range -55to+175 °C TSTG NOTES: 200 mA pF 1. 300us Pulse Width, Duty Cycle 2%. 2. Thermal Resistance Junction To Case. 3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. Revision:1 2002/06/17