30V N-Channel Enhancement Mode MOSFET V DS =30V R DS(ON) ,Vgs@10V,Ids@45A=6mÙ R DS(ON) ,[email protected],Ids@30A=10mÙ FEATURES ry ME70N03 Pb Free Product na Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Specially Designed for DC/DC Converters and Motor Drivers Fully Characterized Avalanche Voltage and Current TO-252(D-PAK) INTERNAL SCHEMATIC DIAGRAM Top View mi Drain Gate G D S Absolute Maximum Ratings (TA=25 Unless Otherwise Noted) Symbol eli Parameter Drain-Source Voltage Gate-Source Voltage Pulsed Drain T A=25 T A=100 Operating Junction Temperature Storage Temperature Range Maximum Power Dissipation Pr Avalanche Energy with Single Pulse I D = 50A,VDD= 25V, L= 0.5mH Limit V DS 30 V GS 20 ID 60 I DM 350 Continuous Drain Current Current 1) Source PD TJ T stg E AS 70 42 Unit V A W -55 to 150 300 Junction-to-Case Thermal Resistance R JC 1.8 Junction-to-Ambient Thermal Resistance (PCB mounted) 2) R JA 40 mJ /W Note:1.Maximum DC current limited by the package 2 2.1-in 2oz Cu PCB board Jul,2005-Ver1.0 01 30V N-Channel Enhancement Mode MOSFET Electrical Characteristics (T J =25 Symbol Parameter Unless Specified) Test Conditions STATIC Drain-Source Breakdown Voltage V GS = 0V, I D =250 A RDS(ON) Drain-Source On-State Resistance V GS = 4.5V, I D =30A V GS = 10V, I D =30A VGS(th) Gate Threshold Voltage V DS = V GS, I D =250 A IDSS V DS = 25 V, V GS = 0V IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Rg gfs Gate Resistance Forward Transconductance Total Gate Charge Qgs Gate-Source Charge Qgd Td(on) Gate-Drain Charge tr Turn-On Rise Time Td(off) Turn-Off Delay Time tf Turn-Off Fall Time Ciss Input Capacitance Coss Crss Output Capacitance Turn-On Delay Time Typ Max Unit 25 - - V 1 7.5 9.0 4.5 6.0 1.6 3 V GS = +20V, VDS = 0V A nA 26 Reverse Transfer Capacitance VDS= 15V, ID= 25A, V GS=10V VDD= 15V, RL = 15 ID = 1A, VGEN=10V RG = 6 VDS= 15V, VGS=0V f = 1.0 Mhz eli Diode Forward Voltage 6 I S =20A, VGS = 0V nC 5 17 3.5 ns 40 6 2134 pF 343 134 20 0.85 1.2 A V 300us,duty cycle 2% Pr Note:pulse test:pulse width V S V DS = 15V, ID =15A SOURCE-DRAIN DIODE IS Max.Diode Forward Current VSD 1 +100 m 1 mi Qg Min na BVDSS DYNAMIC ry ME70N03 02 30V N-Channel Enhancement Mode MOSFET Physical Dimensions inches(millimeters) unless otherwise noted E2 L D D2 na TO-252 ry ME70N03 A C H A1 mi L2 b1 b L3 L1 SYMBOL eli A A1 C E E2 D D2 H L L1 L2 L3 b b1 P E Pr P MILLIMETE RS MIN MAX 2.250 2.350 0.950 1.050 0.490 0.530 6.400 6.600 5.300 5.450 6.000 6.200 7.100 7.300 9.700 10.10 0 0.600 Ref 1.425 1.625 0.650 0.850 0.020 0.120 0.770 0.850 0.840 0.940 2.290 BSC INCHES MIN 0.089 0.037 0.019 0.252 0.209 0.236 0.280 0.382 0.024 0.056 0.026 0.001 0.030 0.033 0.090 MAX 0.093 0.041 0.021 0.260 0.215 0.244 0.287 0.398 Ref 0.064 0.033 0.005 0.033 0.037 BSC 03