ETC OM6425SP6

Preliminary Data Sheet
OM6423SP6
OM6424SP6
OM6425SP6
OM6426SP6
POWER MOSFETS IN 11-PIN INDUSTRIAL
SIP PACKAGE
Industrial 11-Pin, 150 to 500 V, N-Channel
Power MOSFET, Full “H” Bridge
FEATURES
•
•
•
•
Low RDS(on)
Fast Switching
Single SIP Package
3 Voltage, Current Ratings
DESCRIPTION
This series of “H” Bridge configured circuits provides the user with a low cost solution
to power control. Ideally suited for stepper motors, limited span designs, lighting
systems, and D.C. motor applications.
2.1
SCHEMATIC
MECHANICAL OUTLINE
.250
MAX.
1.140
1.100
.550
.190
.062
.145
.125
.250
.930
.690
.785
.115
1
2
3
4 5,6,7 8
9
10
.071
11
.018
.057
.010
.250
MIN.
.100
1.000
FOR FURTHER INFORMATION, CONTACT FACTORY DIRECT OR YOUR LOCAL SALES REPRESENTATIVE.
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
4 11 R1
Supersedes 2 07 R0
2.1 - 123
OM6423SP6 - OM6426SP6
ELECTRICAL CHARACTERISTICS:
Characteristic
Drain-Source Breakdown Voltage
(VGS = 0, ID = 0.25mA)
Zero Gate Voltage Drain Current
(VDS = Rated VDSS, VGS = 0)
(VDS = Rated VDSS, VGS = 0, TJ = 85°C)
Gate-Body Leakage Current, Forward
(VGSF = ±20 Vdc, VDS = 0)
Gate Threshold Voltage
(VDS = VGS, ID = 250µA)
Static Drain-Source-On-Resistance
(VGS = 10Vdc)
Drain-Source-On-Voltage
(VGS = 10V, TJ = 85°C)
Forward Transconductance (VDS = 10V, ID = 12A)
Input Capacitance
(VDS = 25V,
Output Capacitance
VGS = 0,
Reverse Transfer Capacitance
f = 1MHz)
Turn-On Delay Time
(VDD = 25V, ID = 2A)
Turn-Off Delay Time
(VDD = 25V, ID = 2A)
Source Drain Diode Forward On Voltage If = 10
2.1
ELECTRICAL CHARACTERISTICS:
Characteristic
Drain-Source Breakdown Voltage
(VGS = 0, ID = 0.25mA)
Zero Gate Voltage Drain Current
(VDS = Rated VDSS, VGS = 0)
(VDS = Rated VDSS, VGS = 0, TJ = 85°C)
Gate-Body Leakage Current, Forward
(VGSF = ±20 Vdc, VDS = 0)
Gate Threshold Voltage
(VDS = VGS, ID = 250µA)
Static Drain-Source-On-Resistance
(VGS = 10Vdc)
Drain-Source-On-Voltage
(VGS = 10V, TJ = 85°C)
Forward Transconductance (VDS = 10V, ID = 12A)
Input Capacitance
(VDS = 25V,
Output Capacitance
VGS = 0,
Reverse Transfer Capacitance
f = 1MHz)
Turn-On Delay Time
(VDD = 25V, ID = 2A)
Turn-Off Delay Time
(VDD = 25V, ID = 2A)
Source Drain Diode Forward On Voltage If = 4
T = 25° unless otherwise noted.
6423SP6
Symbol
Min.
Max.
V(BR)DSS
50
150
IDSS
250
1000
IGSSF
500
500
VGS(th)
2.0
4.0
rDS(on)
@ ID =
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
td(off)
VSD
.02
-
.08
5.0
.4
8.0
700
450
180
20
110
1.6
T = 25° unless otherwise noted.
6425SP6
Symbol
Min.
Max.
V(BR)DSS
200
IDSS
250
1000
IGSSF
500
500
VGS(th)
2.0
4.0
rDS(on)
@ ID =
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
td(off)
VSD
-
.8
2.0
1.6
1.3
600
300
80
40
100
1.6
6424SP6
Min.
Max.
Units
Vdc
100
-
-
250
1000
500
500
2.0
4.0
-
.16
4.0
.64
5.0
850
260
50
30
40
1.6
A
V
mhos
pF
pF
pF
ns
ns
V
6426SP6
Min.
Max.
Units
µA
nA
V
500
-
Vdc
-
250
1000
µA
500
500
2.0
4.0
-
3.0
1.0
3.0
1.0
400
150
40
60
30
1.6
nA
V
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
A
V
mhos
pF
pF
pF
ns
ns
V