D 30 RDS(ON) 27mΩ TSOP-6 Lead-Free D D 6 5 4 1 2 3 D D G PRODUCT SUMMARY V(BR)DSS P2703BAG N-Channel Logic Level Enhancement Mode Field Effect Transistor_Preliminary NIKO-SEM S 1. GATE 2. DRAIN 3. SOURCE ID G 7A S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Voltage TC = 25 °C Continuous Drain Current LIMITS UNITS VGS ±20 V 7 ID TC = 100 °C Pulsed Drain Current SYMBOL 1 5 IDM TC = 25 °C Power Dissipation 20 1.6 PD TC = 100 °C Operating Junction & Storage Temperature Range 1 Lead Temperature ( /16” from case for 10 sec.) A W 1.2 Tj, Tstg -55 to 150 TL 275 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Case RθJC 30 Junction-to-Ambient RθJA 78 UNITS °C / W 1 Pulse width limited by maximum junction temperature. Duty cycle ≤ 1% 2 ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 30 VGS(th) VDS = VGS, ID = 250µA 1 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V Zero Gate Voltage Drain Current IDSS Gate Threshold Voltage On-State Drain Current1 ID(ON) Drain-Source On-State Resistance1 RDS(ON) Forward Transconductance1 V 1.5 3 ±100 nA VDS = 24V, VGS = 0V 1 VDS = 20V, VGS = 0V, TJ = 125 °C 10 VDS = 5V, VGS = 10V gfs 1 20 µA A VGS = 4.5V, ID = 5A 32 40 VGS = 10V, ID = 7A 23 27 VDS = 5V, ID = 7A 14.4 mΩ S AUG-12-2005 N-Channel Logic Level Enhancement Mode Field Effect Transistor_Preliminary NIKO-SEM P2703BAG TSOP-6 Lead-Free DYNAMIC Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 70 Qg 10 Total Gate Charge 2 Gate-Source Charge Gate-Drain Charge 2 2 Turn-On Delay Time 2 VGS = 0V, VDS = 10V, f = 1MHz 2 Fall Time2 pF 140 Qgs VDS = 15V, VGS = 10V, 1.7 Qgd ID = 7A 2.1 td(on) Rise Time2 Turn-Off Delay Time 680 15 nC 8.0 tr VDS = 10V, 4.0 td(off) ID ≅ 1A, VGS = 10V, RGEN = 6Ω 22.0 tf nS 5.0 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) Continuous Current Forward Voltage IS 1 VSD IF = 1A, VGS = 0V 3 A 1.1 V Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%. Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. 1 2 REMARK: THE PRODUCT MARKED WITH “19YWW”, DATE CODE or LOT # Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name 6 5 4 19YWW 1 2 3 Marking Description: 1 - N MOSFET 9 - Serial Number Y - Year W - Week 2 AUG-12-2005 NIKO-SEM P2703BAG N-Channel Logic Level Enhancement Mode Field Effect Transistor_Preliminary TSOP-6 Lead-Free I ,DRAIN - SOURCE CURRENT( A ) TYPICAL CHARACTERISTICS 0 100 BODY DIODE FORWARD VOLTAGE VARIATION WITH SOURCE CURRENT AND TEMPERATURE I S,REVERSE DRAIN CURRENT( A ) VGS= 0V 10 TA = 125°C 1 25°C 0.1 -55°C 0.01 0.001 0.0001 0 3 0.8 1.0 1.2 0.2 0.4 0.6 VSD ,BODY DIODE FORWARD VOLTAGE( V ) 1.4 AUG-12-2005 N-Channel Logic Level Enhancement Mode Field Effect Transistor_Preliminary NIKO-SEM TSOP-6 Lead-Free TRANSIENT THERMAL RESPONSE CURVE 1 D=0.5 10 0 0.20 0.10 10 10 -1 -2 0.05 0.02 0.01 Single pulse P(pk) TRANSIENT THERMAL RESISTANCE r ( t ) ,NORMALIZED EFFECTIVE 10 P2703BAG t1 10 10 -3 t2 1.RθJC (t)=r(t)*R 2.R θJC = 156° C/W 3.T j + TC = P * R θJC (t) t1 4.Duty Cycle,D = t2 -4 10 -4 10 -3 10 -2 -1 10 10 t1 , TIME( ms ) 0 10 1 10 4 2 10 3 AUG-12-2005 P2703BAG N-Channel Logic Level Enhancement Mode Field Effect Transistor_Preliminary NIKO-SEM TSOP-6 Lead-Free TSOP- 6 MECHANICAL DATA mm mm Dimension Dimension Min. Typ. A Max. 0.95 Min. Typ. Max. H 0.08 0.13 0.2 0.3 B 2.5 2.8 3.1 I C 1.5 1.6 1.7 J D 2.7 2.9 3.1 K E 0.7 1.2 L F 0 0.15 M G 0.3 0.5 N 0.4 0.6 H B C A I D E G F 5 AUG-12-2005