DC – 8 GHz Terminated SPDT Switch Technical Data HMMC-2007 Features • Outputs Terminated in 50 Ω When Off • Frequency Range: DC-8 GHz • Insertion Loss: 1.2 dB @ 8␣ GHz • Isolation: >70 dB @ 45 MHz >35 dB @ 8 GHz • Return Loss: 25 dB (Both Input and Selected Output) 18 dB Unselected Output • Switching Speed: <20 µs (10%-90% RF) • P-1dB: 27 dBm • Harmonics (DC Coupled): <-80 dBc @ 10 dBm Description The HMMC-2007 is a GaAs monolithic microwave integrated circuit (MMIC) designed for low insertion loss and high isolation from DC to 8 GHz. It is intended for use as a general-purpose, single-pole, double-throw (SPDT), absorptive switch. Two series and two shunt MESFETs per throw provide 1.4␣ dB maximum insertion loss and 38 dB typical isolation at 6␣ GHz. HMMC-2007 chips use through-substrate vias to provide ground connections to the chip backside and minimize the number of wire bonds required. 5965-5451E Chip Size: Chip Size Tolerance: Chip Thickness: Pad Dimensions: 660 x 960 µm (25.9 x 37.8 mils) ± 10 µm (± 0.4 mils) 127 ± 15 µm (5.0 ± 0.6 mils) 120 x 120 µm (4.7 x 4.7 mils) Absolute Maximum Ratings[1] Symbol Parameters/Conditions Units Min. Max. V -10.5 +10.5 Vsel Select Voltages 1 and 2 Pin RF Input Power Top Operating Temperature °C -55 +125 TSTG Storage Temperature °C -65 +165 Tmax Maximum Assembly Temp. °C +200 Punsel Power into Unselected Output dBm 27 dBm 27 Note: 1. Operation in excess of any one of these conditions may result in permanent damage to this device. TA = 25°C except for Top, TSTG, and Tmax. 7-26 DC Specifications/Physical Properties, TA = 25°C Symbol Parameters and Test Conditions I SEL -10 V Leakage Current @ -10 V µA 200 I SEL +10 V Leakage Current @ +10 V µA 20 Vp BVgss Units Pinch-Off Voltage (VSEL2 = Vp, VRFout2 = +2 V, IRFout2 = 4 mA, VSEL1 = -10 V, VRFout1 = open circuit, VRFin = GND V Breakdown Voltage (Test FET w/VD = VS = GND, IG = -50 µA) V Min. Typ. -6.75 Max. -3.00 -13.0 RF Specifications, TA = 25°C, ZO = 50 Ω, Vsel-high = +10 V, Vsel-low = -10 V Symbol BW Parameters and Test Conditions Guaranteed Operating Bandwidth Units Min. GHz DC Typ. 8.0 IL Insertion Loss, RFin to Selected RFout, f = 6 GHz, OFF throw dB 1.1 ISO Isolation, RFin to Unselected RFout, f = 6 GHz, OFF throw dB 38 RL in Input Return Loss @ 6 GHz dB 25 RL out-ON Output Return Loss, ON throw @ 6 GHz dB 25 RL out-OFF Output Return Loss, OFF throw @ 6 GHz dB 18 P1 dB Input Power where IL increases by 1 dB fin = 2 GHz dBm 27 ts Switching Speed, 10% – 90% RF Envelope fin = 2 GHz µs 20 7-27 Max. 1.4 Applications Assembly Techniques The HMMC-2007 can be used in instrumentation, communications, radar, ECM, EW, and many other systems requiring SPDT switching. It can be used for pulse modulation, port isolation, transfer switching, high-speed switching, replacement of mechanical switches, and so on. Die attach should be done with conductive epoxy. Gold thermosonic bonding is recommended for all bonds. The top and bottom metallization is gold. For more detailed information see HP application note #999 “GaAs MMIC Assembly and Handling Guidelines.” GaAs MMICs are ESD sensitive. Proper precautions should be used when handling these devices. S-Parameters[1], TA = 25°C, ZO = 50 Ω, Vsel high = 0 V, Vsel low = -10 V Freq. GHz 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 S11 S21 S31 S22 S33 (Insertion Loss) (Isolation) (ON Throw) (OFF Throw) dB Mag. Ang. dB -26.41 -27.53 -30.69 -32.37 -31.79 -30.60 -28.53 -27.14 -26.46 -27.03 -28.64 -29.55 -26.88 -23.24 -21.53 -21.21 -20.92 -19.88 -18.65 -17.04 0.048 0.042 0.029 0.024 0.026 0.030 0.037 0.044 0.048 0.045 0.037 0.033 0.045 0.069 0.084 0.087 0.090 0.101 0.117 0.141 -57.11 -113.83 -176.73 115.57 61.35 4.27 -58.32 -124.01 172.69 107.19 32.44 -59.18 -156.32 130.95 70.91 15.06 -41.26 -104.30 -175.05 116.96 -1.08 -1.13 -1.18 -1.21 -1.25 -1.30 -1.33 -1.34 -1.37 -1.40 -1.42 -1.45 -1.51 -1.56 -1.52 -1.62 -1.64 -1.66 -1.84 -1.90 Mag. Ang. 0.88 0.88 0.87 0.87 0.87 0.86 0.86 0.86 0.85 0.85 0.85 0.85 0.84 0.84 0.84 0.83 0.83 0.83 0.81 0.80 -49.06 -93.69 -138.08 177.39 133.00 88.53 44.08 -0.53 -45.16 -89.79 -134.56 -179.46 135.54 90.76 46.04 0.47 -44.44 -90.23 -135.81 179.24 dB dB -67.74 -60.55 -56.17 -53.18 -50.38 -47.63 -45.67 -44.12 -42.68 -41.45 -40.28 -39.16 -38.12 -37.13 -36.36 -35.64 -34.83 -34.13 -33.62 -34.14 -28.40 -24.74 -31.91 -31.31 -28.90 -32.95 -29.26 -30.61 -32.21 -36.49 -34.51 -32.44 -27.18 -23.83 -21.48 -21.73 -22.22 -20.42 -18.17 -16.31 Mag. Ang. 0.03 0.05 0.02 0.02 0.03 0.02 0.03 0.02 0.02 0.01 0.01 0.02 0.04 0.06 0.08 0.08 0.07 0.09 0.12 0.15 -47.94 -117.54 168.76 119.22 68.41 -11.68 -44.21 -113.40 165.53 141.98 4.26 -100.27 176.54 122.00 51.31 -15.06 -81.88 -145.01 145.14 85.15 dB Mag. Ang. -32.26 -30.79 -30.35 -26.21 -26.38 -25.66 -22.99 -22.41 -21.68 -19.88 -19.89 -19.03 -18.28 -18.67 -18.61 -17.65 -16.95 -16.07 -14.94 -14.31 0.024 0.029 0.030 0.049 0.048 0.052 0.071 0.076 0.082 0.101 0.101 0.112 0.122 0.117 0.117 0.131 0.142 0.157 0.179 0.193 47.18 -38.11 -64.68 -134.70 151.66 103.24 38.61 -21.25 -75.25 -133.81 167.02 115.49 56.80 -2.63 -60.32 -124.25 172.46 115.03 59.82 3.39 Note: 1. Three-port-wafer-probed data: Port 1 = RF Input, Port 2 = Selected RF Output (i.e., ON throw), and Port 3 = Unselected RF Output (i.e., OFF throw). 7-28 RF COMMON RF1 RF2 SEL2 SEL1 Figure 1. HMMC-2007 Schematic. Recommended Operating Conditions, TA = 25°C Select Line RF Path SEL1 SEL2 RF IN to RF OUT2 RF IN to RF OUT1 +10V -10 V Isolated Low Loss -10 V +10V Low Loss Isolated 7-29 HMMC-2007 Typical Performance 0 S21-ON, S31-ON -20 -2.0 -3.0 S21-OFF, S31-OFF -40 -60 -80 -4.0 -5.0 0 5 10 -100 0 Figure 2. Insertion Loss[1] vs. Frequency. -10 S33 -30 S22 -40 5 10 FREQUENCY (GHz) Figure 5. Output Return Loss[1] vs. Frequency. 1 GHz -1 -2 10 MHz -3 -4 -5 10 15 20 25 POWER INPUT (dBm) Figure 6. Gain Compression vs. Power Input. Note: 1. Data taken with the device mounted in modular breadboard package. 7-30 -10 -20 S11 -30 -40 -50 0 5 FREQUENCY (GHz) 0 GAIN COMPRESSION (dB) OUTPUT RETURN LOSS (dB) 10 Figure 3. Input-to-Output Isolation[1] vs. Frequency. 0 -50 0 5 FREQUENCY (GHz) FREQUENCY (GHz) -20 0 INPUT RETURN LOSS (dB) -1.0 ISOLATION (dB) INSERTION LOSS (dB) 0 30 Figure 4. Input Return Loss[1] vs. Frequency. 10 97 480 863 960 660 563 97 97 0 0 97 863 Figure 6. HMMC-2007 Bonding Pad Locations. (Dimensions in micrometers) Note: All compression data measured in an individual device mounted in an HP83040 Series Modular Microcircuit Package @ Tcase = 25°C. This data sheet contains a variety of typical and guaranteed performance data. The information supplied should not be interpreted as a complete list of circuit specifications. In this data sheet the term typical refers to the 50th percentile performance. For additional information contact your local HP sales representative. 7-31