AGILENT MGA-71543-TR2G

Agilent MGA-71543
Low Noise Amplifier with
Mitigated Bypass Switch
Data Sheet
Features
• Lead-free Option Available
Description
Agilent’s MGA-71543 is an
economical, easy-to-use GaAs
MMIC Low Noise Amplifier (LNA),
which is designed for adaptive
CDMA and W-CDMA receiver
systems. The MGA-71543 is part
of the Agilent Technologies
complete CDMAdvantage RF
chipset.
The MGA-71543 features a
minimum noise figure of 0.8 dB
and 16 dB available gain from a
single stage, feedback FET
amplifier. The input and output
are partially matched, and only a
simple series/shunt inductor
match is required to achieve low
noise figure and VSWR into 50Ω.
When set into the bypass mode,
both input and output are internally matched through a mitigative
circuit. This circuit draws no
current, yet duplicates the in and
out impedance of the LNA. This
allows the system user to have
minimum mismatch change from
LNA to bypass mode, which is
very important when the
MGA-71543 is used between
duplexers and/or filters.
The MGA-71543 is designed for
CDMA and W-CDMA receiver
systems. The IP3, Gain, and
mitigative network are tailored to
these applications where filters
are used. Many CDMA systems
operate 20% LNA mode, 80%
bypass. With the bypass current
draw of zero and LNA of 10 mA,
the MGA-71543 allows an average
2 mA current.
The MGA-71543 is a GaAs MMIC,
processed on Agilent’s cost
effective PHEMT (Pseudomorphic
High Electron Mobility Transistor
Technology). It is housed in the
SOT343 (SC70 4-lead) package.
• Noise figure: 0.8 dB (NFmin)
• Gain: 16 dB
• Average Idd = 2mA in CDMA
handset
• Bypass switch on chip
Loss = -5.6 dB (Id < 5 µA)
IIP3 = +35 dBm
• Adjustable input IP3: 0 to +9 dBm
• 2.7 V to 4.2 V operation
Applications
• CDMA (IS-95, J-STD-008) Receiver
LNA
• Transmit Driver Amp
• W-CDMA Receiver LNA
• TDMA (IS-136) handsets
Surface Mount Package
SOT-343/4-lead SC70
Attention:
Observe precautions for
handling electrostatic
sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 0)
Refer to Agilent Application Note A004R:
Electrostatic Discharge Damage and Control.
Pin Connections and
Package Marking
3
INPUT
& Vref
RF Gnd
& Vs
4
1
71x
The MGA-71543 offers an integrated
solution of LNA with adjustable
IIP3. The IIP3 can be fixed to a
desired current level for the
receiver’s linearity requirements.
The LNA has a bypass switch
function, which provides low
insertion loss at zero current. The
bypass mode also boosts dynamic
range when high level signal is
being received.
• Operating frequency:
0.1 GHz ~ 6.0 GHz
RF Gnd
& Vs
2
OUTPUT
& Vd
Functional Block Diagram
Simplified Schematic
+
–
RF OUT
Input
+
–
1.5 nH
71
RF IN
Evaluation Test Circuit
(single positive bias)
2.7 nH
Control
Input
& Vref
Output
Output
& Vd
Gain FET
Rbias
Vd
Switch & Bias
RF Gnd
& Vs
RF Gnd
control
MGA-71543 Absolute Maximum Ratings [1]
Symbol
Parameter
Units
Absolute
Maximum
Operation
Maximum
Vd
Maximum Input to Output Voltage [4]
V
5.5
4.2
Vc
Maximum Input to Ground DC Voltage [4]
V
+.3
-5.5
+.1
-4.2
Id
Supply Current
mA
60
50
Pd
Power Dissipation [2]
mW
240
200
Pin
CW RF Input Power
dBm
+15
+10
Tj
Junction Temperature
°C
170
150
TSTG
Storage Temperature
°C
-65 to +150
-40 to +85
Thermal Resistance: [2, 3]
θjc = 240°C/W
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Ground lead temperature at 25°C.
3. Thermal resistance measured by 150°C
Liquid Crystal Measurement method.
4. Maximum rating assumes other parameters
are at DC quiescent conditions.
Product Consistency Distribution Charts [5,6]
150
150
Cpk = 2.00
Std = 0.24
+3 Std
-3 Std
60
30
0
14.4
+3 Std
-3 Std
60
0
15.4
16.4
17.4
Figure 1. Gain @ 2 GHz, 3V, 10 mA.
LSL = 14.4, Nominal = 15.9, USL = 17.4
Notes:
5. Distribution data sample size is 450 samples
taken from 9 different wafers. Future wafers
allocated to this product may have nominal
values anywhere within the upper and lower
specification limits.
6. Measurements made on production test
board, Figure 4. This circuit represents a
trade-off between an optimal noise match
and a realizable match based on production
test requirements at 10 mA bias current.
90
-3 Std
+3 Std
60
30
30
GAIN (dB)
2
90
FREQUENCY
90
Cpk = 2.33
Std = 0.02
120
120
FREQUENCY
FREQUENCY
120
150
Cpk = 1.16
Std = 0.96
1
2
3
4
5
6
7
8
IIP3 (dBm)
Figure 2. IIP3 @ 2 GHz, 3V, 10 mA.
LSL = 1.0, Nominal = 3.0, USL = 8.0
Excess circuit losses have been deembedded from actual measurements.
Performance may be optimized for different
bias conditions and applications. Consult
Application Note for details.
0
0.85
0.95
1.05
1.15
1.25
1.35
NF (dB)
Figure 3. NF @ 2 GHz, 3V, 10 mA.
LSL = 0.85, Nominal = 1.08, USL = 1.45
1.45
MGA-71543 Electrical Specifications
Tc = +25°C, Zo = 50Ω, Id = 10 mA, Vd = 3V, unless noted
Units
Min.
Typ.
Max.
σ [1]
Id = 10 mA
V
-0.86
-0.65
-0.43
0.041
Vd = 3.0 V (= Vds - Vref)
Id = 10 mA
dB
1.1
1.45
0.02
f = 2.01 GHz
Vd = 3.0 V (= Vds - Vref)
Id = 10 mA
dB
14.4
15.9
17.4
0.24
IIP3 test
f = 2.01 GHz
Vd = 3.0 V (= Vds - Vref)
Id = 10 mA
dBm
1
3.0
0.96
Gain, Bypass
f = 2.01 GHz
Vds = 0 V, Vref = -3V
Bypass Mode[6]
Id = 0 mA
dB
-6.4
-5.6
0.12
Ig test
Bypass Mode Vds = 0 V, Vref = -3 V[6]
Id = 0 mA
µA
2.0
1.5
NFmin [3]
Minimum Noise Figure
As measured in Figure 5 Test Circuit
(Γopt computed from s-parameter and
noise parameter performance as measured
in a 50Ω impedance fixture)
f = 0.9 GHz
f = 1.5 GHz
f = 1.9 GHz
f = 2.1 GHz
f = 2.5 GHz
f = 6.0 GHz
dB
0.7
0.7
0.8
0.8
0.8
1.1
Ga[3]
Associated Gain at Nfo
As measured in Figure 5 Test Circuit
(Gopt computed from s-parameter and
noise parameter performance as measured
in a 50Ω impedance fixture)
f = 0.9 GHz
f = 1.5 GHz
f = 1.9 GHz
f = 2.1 GHz
f = 2.5 GHz
f = 6.0 GHz
dB
17.1
16.4
15.8
15.4
14.9
10.0
P1dB
Output Power at 1 dB Gain Compression
As measured in Evaluation Test Circuit with
source resistor biasing [4,5]
Frequency = 2.01 GHz
Id = 6 mA
Id = 10 mA
Id = 20 mA
Id = 40 mA
dBm
+3.0
+7.4
+13.1
+15.5
IIP3
Input Third Order Intercept Point
As measured in Figure 4 Test Circuit [5]
Frequencies = 2.01 GHz, 2.02 GHz
Id = 6 mA
Id = 10 mA
Id = 20 mA
Id = 40 mA
dBm
-0.5
+3.0
+7.4
+8.7
Switch
Bypass Switch Rise/Fall Time
(10% - 90%)
As measured in Evaluation Test Circuit
Intrinsic
Eval Circuit
nS
10
100
RLin
Input Return Loss as measured in Fig. 4
f = 2.01 GHz
dB
6.0
0.31
RLout
Output Return Loss as measured in Fig. 4
f = 2.01 GHz
dB
10.9
0.65
ISOL
Isolation |s12|2 as measured in Fig. 5
f = 2.01 GHz
dB
-22.5
Symbol
Parameter and Test Condition
Vref test
Vds = 2.4 V
NF test
f = 2.01 GHz
Gain test
Notes:
1. Standard Deviation and Typical Data based at least 450 part sample size from 9 wafers. Future wafers allocated to this product may have nominal
values anywhere within the upper and lower spec limits.
2. Measurements made on a fixed tuned production test circuit (Figure 4) that represents a trade-off between optimal noise match, maximum gain
match, and a realizable match based on production test board requirements at 10 mA bias current. Excess circuit losses have been de-embedded
from actual measurements. Vd=Vds-Vref where Vds is adjusted to maintain a constant Vd bias equivalent to a single supply 3V bias application.
Consult Applications Note for circuit biasing options.
3. Minimum Noise Figure and Associated Gain data computed from s-parameter and noise parameter data measured in a 50Ω system using ATN NP5
test system. Data based on 10 typical parts from 9 wafers. Associated Gain is the gain when the product input is matched for minimum Noise Figure.
4. P1dB measurements were performed in the evaluation circuit with source resistance biasing. As P1dB is approached, the drain current is
maintained near the quiescent value by the feedback effect of the source resistor in the evaluation circuit. Consult Applications Note for circuit
biasing options.
5. Measurements made on a fixed tuned production test circuit that represents a trade-off between optimal noise match, maximum gain match, and a
realizable match based on production test board requirements at 10 mA bias current. Performance may be optimized for different bias conditions
and applications. Consult Applications Note.
6. The Bypass Mode test conditions are required only for the production test circuit (Figure 4) using the gate bias method. In the preferred source
resistor bias configuration, the Bypass Mode is engaged by presenting a DC open circuit instead of the bias resistor on Pin 4.
3
MGA-71543 Typical Performance
Tc = 25°C, Zo = 50, Vd = 3V, Id = 10 mA unless stated otherwise. Data vs. frequency was measured in Figure 5 test system
and was optimized for each frequency with external tuners.
960 pF
RF
Input
RF
Input
Vds
56 pF
56 pF
2.7 nH
1
3.9 nH
Vref
4
2
Vref
RF
Output
RF
Output
56 pF
Figure 4. MGA-71543 Production Test Circuit.
Figure 5. MGA-71543 Test Circuit for S, Noise, and
Power Parameters over Frequency.
1.5
20
1.3
17
18
1.1
0.9
0.7
INPUT IP3 (dBm)
15
ASSOCIATED GAIN (dB)
NOISE FIGURE (dB)
Bias
Tee
71
3
71
1.5 nH
14
11
2.7V
3.0V
3.3V
1
2
3
4
5
9
6
6
2.7V
3.0V
3.3V
0
5
0
12
3
8
2.7V
3.0V
3.3V
0.5
-3
0
1
FREQUENCY (GHz)
2
3
4
5
0
6
1
FREQUENCY (GHz)
Figure 6. Minimum Noise Figure vs.
Frequency and Voltage.
2
3
4
5
6
FREQUENCY (GHz)
Figure 7. Associated Gain with Fmin vs.
Frequency and Voltage.
20
Figure 8. Input Third Order Intercept Point vs.
Frequency and Voltage.
18
-40°C
+25°C
+85°C
17
15
INPUT IP3 (dBm)
ASSOCIATED GAIN (dB)
Vds
Test Fixture
Bias Tee
14
11
12
m3
9
6
m2
3
-40°C
+25°C
+85°C
8
0
5
m1
-3
0
1
2
3
4
5
0
6
1
FREQUENCY (GHz)
Figure 9. Associated Gain with Fmin vs.
Frequency.
2
3
4
5
6
FREQUENCY (GHz)
500 MHz to 6 GHz
Figure 10. Input Third Order Intercept Point
vs. Frequency and Temperature.
Figure 11. S11 Impedance vs. Frequency.
(m1 = Sw, m2 = 6 mA, m3 = 10 mA)
18
0
15
m2 m1
12
OP1dB (dBm)
m3
INSERTION LOSS (dB)
-2
-4
-6
9
6
3
-8
-3
-10
0
500 MHz to 6 GHz
Figure 12. S22 Impedance vs. Frequency.
(m1 = Sw, m2 = 6 mA, m3 = 10 mA)
4
2.7V
3.0V
3.3V
0
Gass w/Fmin
Minimum
1
2
3
4
5
FREQUENCY (GHz)
Figure 13. Bypass Mode Associated
Insertion Loss with Fmin Match and
Minimum Loss vs. Frequency.
6
0
1
2
3
4
5
6
FREQUENCY (GHz)
Figure 14. Output Power at 1 dB Compression
vs. Frequency and Voltage. [4]
MGA-71543 Typical Performance, continued
18
18
15
15
15
12
12
12
9
6
3
OP1dB (dBm)
18
OP1dB (dBm)
INPUT IP3 (dBm)
Tc = 25°C, Zo = 50, Vd = 3V, Id = 10 mA unless stated otherwise. Data vs. frequency was measured in Figure 5 test system
and was optimized for each frequency with external tuners.
9
-6
3
6 mA
10 mA
20 mA
0
1
2
3
4
5
6
-3
0
10
FREQUENCY (GHz)
Figure 15. Input Third Order Intercept Point
vs. Frequency and Current.
-40°C
+25°C
+85°C
0
-3
0
6
3
-40°C
+25°C
+85°C
0
-3
9
20
30
40
0
10
20
30
40
Idsq CURRENT (mA)
Id CURRENT (mA)
Figure 16. Output Power at 1 dB Compression
vs. Idsq Current and Temperature (Passive
Bias, Vref Fixed) [4].
Figure 17. Output Power at 1 dB Compression
vs. Current and Temperature (Source Resistor
Bias in Evaluation Circuit) [5].
12
20
2.2
2.0
17
1.8
9
14
GAIN (dB)
1.4
NF (dB)
INPUT IP3 (dBm)
1.6
1.2
1.0
0.8
11
8
6
3
0.6
0.4
-40°C
+25°C
+85°C
5
0.2
0
-3
2
0
10
20
30
40
Id CURRENT (mA)
0
10
20
30
40
Id CURRENT (mA)
Figure 18. Minimum Noise Figure vs. Current
(2 GHz).
Figure 19. Gain vs. Current and Temperature
(2 GHz).
1.0
Vs (V)
0.8
0.6
0.4
0.2
0
0
10
20
30
40
Id CURRENT (mA)
Figure 21. Control Voltage vs. Current.
Notes:
4. P1dB measurements were performed with
passive biasing in Production Test Circuit
(Figure 4.). Quiescent drain current, Idsq, is
set by a fixed Vref with no RF drive applied.
As P1dB is approached, the drain current
may increase or decrease depending on
frequency and DC bias point which typically
5
-40°C
+25°C
+85°C
0
results in higher P1dB than if the drain
current is maintained constant by active
biasing.
5. P1dB measurements were performed in
Evaluation Test Circuit with source resistor
biasing which maintains the drain current
near the quiescent value under large signal
conditions.
0
10
20
30
Id CURRENT (mA)
Figure 20. Input Third Intercept Point vs.
Current and Temperature (2 GHz).
40
MGA-71543 Typical Scattering Parameters
TC = 25°C, Vds = 0V, Vref = -3.0V, Id = 0 mA (bypass mode), ZO = 50Ω
Freq
(GHz)
S11
Mag.
S11
Ang.
S21
Mag.
S21
Ang.
S12
Mag.
S12
Ang.
S22
Mag.
S22
Ang.
S21
(dB)
Gmax
(dB)
RLin RLout Isolation
(dB) (dB) (dB)
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2
2.1
2.2
2.3
2.4
2.5
3
3.5
4
4.5
5
5.5
6
6.5
7
8
9
10
11
12
13
14
15
16
17
18
0.968
0.961
0.951
0.947
0.937
0.929
0.921
0.913
0.905
0.895
0.887
0.878
0.869
0.862
0.854
0.847
0.839
0.832
0.825
0.819
0.812
0.806
0.8
0.792
0.787
0.76
0.74
0.721
0.708
0.7
0.7
0.699
0.705
0.708
0.705
0.728
0.781
0.815
0.838
0.847
0.85
0.856
0.848
0.844
0.873
-4.5
-8.4
-11.4
-14.8
-18.1
-21.3
-24.5
-27.7
-30.8
-33.7
-36.6
-39.4
-42.1
-44.7
-47.3
-49.8
-52.4
-54.8
-57.1
-59.5
-61.7
-63.9
-66.3
-68.5
-70.9
-81.8
-93.4
-106
-119.8
-134.7
-150.2
-165.1
179.7
165.3
136.3
106.4
75
48.9
28.2
8.5
-10.6
-28.5
-43.4
-53.9
-65.2
0.021
0.039
0.065
0.09
0.114
0.136
0.157
0.176
0.194
0.211
0.226
0.239
0.252
0.264
0.274
0.283
0.293
0.3
0.308
0.314
0.321
0.326
0.331
0.336
0.341
0.359
0.371
0.377
0.379
0.374
0.362
0.347
0.328
0.307
0.262
0.202
0.141
0.083
0.034
0.005
0.037
0.058
0.072
0.083
0.088
41.1
70.5
73.7
70.9
65.7
61.4
57
52.7
48.6
44.5
40.6
36.8
33.2
29.7
26.3
23.1
19.9
16.8
13.8
11
8.1
5.3
2.6
0
-2.7
-15.1
-27.1
-39.1
-51
-63.2
-75.2
-86.7
-98.1
-109.4
-133.2
-157.3
179.6
156.7
134.9
-22.1
-73.5
-94
-112.3
-127.4
-145.2
0.021
0.039
0.064
0.09
0.114
0.136
0.157
0.176
0.194
0.211
0.226
0.239
0.252
0.263
0.274
0.283
0.292
0.3
0.307
0.314
0.32
0.326
0.331
0.336
0.34
0.358
0.37
0.377
0.378
0.374
0.362
0.347
0.328
0.307
0.262
0.201
0.141
0.083
0.034
0.005
0.036
0.057
0.072
0.083
0.088
41.3
70.8
73.9
71
65.9
61.5
57.1
52.8
48.7
44.6
40.6
36.9
33.3
29.8
26.4
23.2
20
16.9
14
11.1
8.2
5.4
2.7
0.1
-2.5
-15
-27
-39
-50.9
-63
-75.1
-86.5
-98
-109.4
-133.1
-157.2
179.8
156.8
135.6
-19.9
-73.5
-94.1
-112.2
-127.3
-144.4
0.936
0.916
0.901
0.89
0.871
0.861
0.846
0.833
0.82
0.806
0.791
0.776
0.762
0.748
0.732
0.719
0.705
0.692
0.679
0.665
0.653
0.639
0.627
0.616
0.603
0.548
0.497
0.452
0.418
0.393
0.376
0.361
0.35
0.336
0.292
0.242
0.247
0.306
0.367
0.414
0.478
0.555
0.626
0.669
0.706
-5.9
-9.5
-13.1
-16.5
-20.2
-23.7
-27.1
-30.3
-33.3
-36.3
-39.2
-41.9
-44.4
-46.9
-49.2
-51.4
-53.5
-55.5
-57.6
-59.4
-61.2
-63
-64.6
-66.3
-67.8
-75.5
-83.4
-91.6
-100.7
-110.7
-121.1
-130.9
-141.7
-152
-173.9
156.3
114.9
80.3
54.2
29.4
4.7
-15.7
-30.1
-44
-58.7
-33.6
-28.2
-23.7
-20.9
-18.9
-17.3
-16.1
-15.1
-14.2
-13.5
-12.9
-12.4
-12.0
-11.6
-11.2
-11.0
-10.7
-10.5
-10.2
-10.1
-9.9
-9.7
-9.6
-9.5
-9.3
-8.9
-8.6
-8.5
-8.4
-8.5
-8.8
-9.2
-9.7
-10.3
-11.6
-13.9
-17.0
-21.6
-29.4
-46.0
-28.6
-24.7
-22.9
-21.6
-21.1
-12.5
-9.1
-6.3
-4.2
-3.6
-2.8
-2.4
-2.2
-2.0
-1.9
-1.9
-2.0
-2.1
-2.1
-2.2
-2.3
-2.4
-2.5
-2.6
-2.7
-2.8
-2.9
-3.0
-3.1
-3.2
-3.6
-3.9
-4.3
-4.6
-4.9
-5.2
-5.7
-6.1
-6.7
-8.3
-10.4
-12.7
-16.5
-23.5
-39.7
-21.9
-17.4
-15.2
-13.6
-11.9
-0.3
-0.3
-0.4
-0.5
-0.6
-0.6
-0.7
-0.8
-0.9
-1.0
-1.0
-1.1
-1.2
-1.3
-1.4
-1.4
-1.5
-1.6
-1.7
-1.7
-1.8
-1.9
-1.9
-2.0
-2.1
-2.4
-2.6
-2.8
-3.0
-3.1
-3.1
-3.1
-3.0
-3.0
-3.0
-2.8
-2.1
-1.8
-1.5
-1.4
-1.4
-1.4
-1.4
-1.5
-1.2
6
-0.6
-0.8
-0.9
-1.0
-1.2
-1.3
-1.5
-1.6
-1.7
-1.9
-2.0
-2.2
-2.4
-2.5
-2.7
-2.9
-3.0
-3.2
-3.4
-3.5
-3.7
-3.9
-4.1
-4.2
-4.4
-5.2
-6.1
-6.9
-7.6
-8.1
-8.5
-8.8
-9.1
-9.5
-10.7
-12.3
-12.1
-10.3
-8.7
-7.7
-6.4
-5.1
-4.1
-3.5
-3.0
-33.6
-28.2
-23.9
-20.9
-18.9
-17.3
-16.1
-15.1
-14.2
-13.5
-12.9
-12.4
-12.0
-11.6
-11.2
-11.0
-10.7
-10.5
-10.3
-10.1
-9.9
-9.7
-9.6
-9.5
-9.4
-8.9
-8.6
-8.5
-8.5
-8.5
-8.8
-9.2
-9.7
-10.3
-11.6
-13.9
-17.0
-21.6
-29.4
-46.0
-28.9
-24.9
-22.9
-21.6
-21.1
MGA-71543 Typical Scattering Parameters and Noise Parameters
TC = 25°C, Vds = 2.25 V, Vref = -0.77 V, Id = 3 mA, ZO = 50Ω
Freq
(GHz)
S11
Mag.
S11
Ang.
S21
Mag.
S21
Ang.
S12
Mag.
S12
Ang.
S22
Mag.
S22
Ang.
S21
(dB)
Gmax
(dB)
RLin RLout Isolation
(dB) (dB) (dB)
0.3
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2
2.1
2.2
2.3
2.4
2.5
3
3.5
4
4.5
5
6
7
8
9
10
11
12
13
14
15
16
17
18
0.927
0.921
0.915
0.909
0.899
0.891
0.883
0.873
0.863
0.858
0.852
0.846
0.841
0.833
0.828
0.794
0.758
0.717
0.679
0.644
0.594
0.565
0.536
0.545
0.608
0.665
0.707
0.735
0.76
0.788
0.802
0.808
0.845
-10.1
-16.4
-22.7
-28.8
-34.8
-40.5
-46.2
-51.7
-57
-59.7
-62.3
-64.8
-67.5
-70
-72.8
-85.6
-99.1
-113.5
-129
-145.1
-176.1
155
127
99.4
70.4
46.2
27.2
8.7
-9.7
-27.4
-42.4
-53.1
-64.7
2.945
2.939
2.907
2.871
2.826
2.783
2.728
2.693
2.652
2.63
2.609
2.593
2.579
2.554
2.544
2.479
2.43
2.373
2.323
2.252
2.073
1.885
1.715
1.611
1.503
1.332
1.167
1.03
0.904
0.757
0.609
0.5
0.429
170.7
164.1
158.3
152.6
147
141.5
136.3
131.1
126.1
123.7
121.2
118.7
116.3
113.9
111.5
99.7
87.7
75.6
63.1
50.5
26.9
4.6
-16.6
-37
-59.7
-82
-101.9
-121.7
-142.2
-162.1
180
165.7
150.7
0.028
0.032
0.039
0.047
0.054
0.062
0.069
0.076
0.082
0.086
0.089
0.092
0.095
0.098
0.1
0.114
0.125
0.134
0.141
0.144
0.143
0.138
0.126
0.117
0.12
0.12
0.119
0.12
0.122
0.118
0.115
0.113
0.11
23.9
32.9
38.7
41.3
41.5
40.5
38.8
36.7
34.3
33
31.7
30.4
28.9
27.5
26.1
18.5
10.7
2.1
-6.4
-15.4
-31
-45.3
-58.8
-63.7
-71.8
-81.5
-90
-99.8
-110.9
-122.8
-134.2
-144.3
-157.8
0.754
0.744
0.742
0.74
0.736
0.732
0.727
0.721
0.716
0.711
0.707
0.703
0.698
0.695
0.689
0.66
0.626
0.587
0.549
0.511
0.454
0.408
0.344
0.281
0.254
0.274
0.317
0.356
0.421
0.511
0.6
0.653
0.699
-7.9
-12.6
-17.5
-22.1
-26.7
-30.9
-34.9
-38.7
-42.5
-44.2
-46
-47.9
-49.5
-51.3
-52.9
-61.6
-70.5
-80
-90.3
-100.9
-120.8
-140.1
-157.3
-177.8
145.5
106.1
75.4
47.9
20.1
-4.1
-21.1
-36.7
-52.6
9.4
9.4
9.3
9.2
9.0
8.9
8.7
8.6
8.5
8.4
8.3
8.3
8.2
8.1
8.1
7.9
7.7
7.5
7.3
7.1
6.3
5.5
4.7
4.1
3.5
2.5
1.3
0.3
-0.9
-2.4
-4.3
-6.0
-7.4
21.6
21.1
20.6
20.2
19.6
19.1
18.6
18.0
17.5
17.2
17.0
16.7
16.5
16.2
15.9
14.7
13.6
12.5
11.6
10.7
9.2
8.0
6.7
6.0
5.8
5.4
4.8
4.2
3.7
3.1
2.1
1.0
1.0
-0.7
-0.7
-0.8
-0.8
-0.9
-1.0
-1.1
-1.2
-1.3
-1.3
-1.4
-1.5
-1.5
-1.6
-1.6
-2.0
-2.4
-2.9
-3.4
-3.8
-4.5
-5.0
-5.4
-5.3
-4.3
-3.5
-3.0
-2.7
-2.4
-2.1
-1.9
-1.9
-1.5
Freq
(GHz)
Fmin
(dB)
GAMMA OPT
Mag
Ang
Rn/50
Ga
(dB)
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2
2.1
2.2
2.3
2.4
2.5
3
5
6
0.88
0.87
0.9
0.92
0.95
0.95
0.99
1
1.02
1.03
1.03
1.04
1.04
1.08
1.21
1.36
0.61
0.64
0.65
0.6
0.64
0.63
0.62
0.62
0.61
0.63
0.62
0.6
0.61
0.58
0.49
0.46
0.45
0.43
0.44
0.43
0.42
0.41
0.4
0.4
0.4
0.39
0.38
0.37
0.37
0.33
0.14
0.08
14.8
14.8
14.7
14.2
14.2
14
13.7
13.6
13.4
13.4
13.2
12.9
12.9
12.1
9.6
8.4
7
16.3
22.4
28.4
33.5
37.2
40.2
45.4
47.6
49.2
50.9
53.9
55.4
57.6
67.9
120
151.2
-2.5
-2.6
-2.6
-2.6
-2.7
-2.7
-2.8
-2.8
-2.9
-3.0
-3.0
-3.1
-3.1
-3.2
-3.2
-3.6
-4.1
-4.6
-5.2
-5.8
-6.9
-7.8
-9.3
-11.0
-11.9
-11.2
-10.0
-9.0
-7.5
-5.8
-4.4
-3.7
-3.1
-31.1
-29.9
-28.2
-26.6
-25.4
-24.2
-23.2
-22.4
-21.7
-21.3
-21.0
-20.7
-20.4
-20.2
-20.0
-18.9
-18.1
-17.5
-17.0
-16.8
-16.9
-17.2
-18.0
-18.6
-18.4
-18.4
-18.5
-18.4
-18.3
-18.6
-18.8
-18.9
-19.2
MGA-71543 Typical Scattering Parameters and Noise Parameters
TC = 25°C, Vds = 2.3 V, Vref = -0.7 V, Id = 6 mA, ZO = 50Ω
Freq
(GHz)
S11
Mag.
S11
Ang.
S21
Mag.
S21
Ang.
S12
Mag.
S12
Ang.
S22
Mag.
S22
Ang.
S21
(dB)
Gmax
(dB)
RLin RLout Isolation
(dB) (dB) (dB)
0.3
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2
2.1
2.2
2.3
2.4
2.5
3
3.5
4
4.5
5
6
7
8
9
10
11
12
13
14
15
16
17
18
0.911
0.904
0.896
0.887
0.875
0.864
0.853
0.84
0.826
0.82
0.812
0.806
0.797
0.787
0.78
0.738
0.695
0.649
0.609
0.573
0.529
0.507
0.485
0.502
0.574
0.639
0.686
0.715
0.741
0.774
0.789
0.797
0.833
-11
-17.7
-24.5
-31.2
-37.5
-43.7
-49.7
-55.6
-61.2
-64
-66.7
-69.4
-72.3
-74.9
-77.8
-91.2
-105.2
-120.2
-136.2
-152.7
175.9
147.2
119.4
92.5
65
42.1
23.9
5.8
-12
-29.2
-43.9
-54.3
-65.8
4.164
4.148
4.094
4.029
3.953
3.877
3.791
3.723
3.649
3.611
3.576
3.55
3.511
3.474
3.446
3.309
3.193
3.072
2.962
2.83
2.555
2.295
2.072
1.922
1.78
1.576
1.388
1.236
1.094
0.926
0.761
0.634
0.549
170.2
163.3
157.1
151.1
145.2
139.5
134
128.7
123.4
121
118.4
115.7
113.3
110.9
108.3
96.3
84.2
72.2
59.9
47.8
25
3.6
-16.8
-36.5
-58.3
-79.6
-98.8
-118.1
-138.4
-158
-175.8
169.4
153.8
0.026
0.03
0.036
0.043
0.05
0.057
0.063
0.069
0.075
0.078
0.081
0.084
0.086
0.089
0.091
0.102
0.112
0.119
0.125
0.128
0.13
0.129
0.123
0.123
0.132
0.134
0.136
0.137
0.137
0.131
0.125
0.121
0.117
23.5
32.6
38.5
41
41.3
40.4
38.8
36.7
34.5
33.3
32.1
30.7
29.4
28.1
26.7
19.7
12.6
4.9
-2.6
-10.4
-23.6
-36
-47.7
-52.7
-63.1
-75
-85.8
-97.7
-110.5
-123.3
-135.2
-145.5
-159
0.667
0.658
0.656
0.654
0.648
0.643
0.638
0.631
0.624
0.619
0.615
0.609
0.604
0.6
0.593
0.561
0.523
0.482
0.443
0.406
0.352
0.308
0.247
0.189
0.174
0.218
0.272
0.318
0.388
0.482
0.57
0.622
0.67
-8.4
-13.4
-18.5
-23.5
-28.2
-32.6
-36.8
-40.7
-44.6
-46.4
-48.2
-50.1
-51.7
-53.5
-55.1
-63.7
-72.6
-82
-92.3
-103
-123
-142.4
-159.2
178.9
132.2
88.5
59.8
34.5
9.3
-11.4
-26.3
-40.6
-55.4
12.4
12.4
12.2
12.1
11.9
11.8
11.6
11.4
11.2
11.2
11.1
11.0
10.9
10.8
10.7
10.4
10.1
9.7
9.4
9.0
8.1
7.2
6.3
5.7
5.0
4.0
2.8
1.8
0.8
-0.7
-2.4
-4.0
-5.2
22.6
22.2
21.7
21.2
20.6
20.0
19.5
18.9
18.4
18.1
17.8
17.6
17.3
16.9
16.7
15.5
14.3
13.3
12.4
11.5
10.1
8.9
7.8
7.1
6.9
6.4
5.9
5.4
4.9
4.4
3.6
2.5
2.5
-0.8
-0.9
-1.0
-1.0
-1.2
-1.3
-1.4
-1.5
-1.7
-1.7
-1.8
-1.9
-2.0
-2.1
-2.2
-2.6
-3.2
-3.8
-4.3
-4.8
-5.5
-5.9
-6.3
-6.0
-4.8
-3.9
-3.3
-2.9
-2.6
-2.2
-2.1
-2.0
-1.6
Freq
(GHz)
Fmin
(dB)
GAMMA OPT
Mag
Ang
Rn/50
Ga
(dB)
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2
2.1
2.2
2.3
2.4
2.5
3
5
6
0.71
0.74
0.76
0.79
0.81
0.8
0.82
0.83
0.85
0.85
0.87
0.87
0.88
0.9
1.03
1.14
0.56
0.58
0.56
0.54
0.58
0.57
0.57
0.56
0.55
0.58
0.56
0.54
0.55
0.53
0.42
0.38
0.32
0.3
0.31
0.3
0.29
0.29
0.28
0.28
0.28
0.27
0.26
0.26
0.26
0.23
0.11
0.07
16.3
16.3
15.9
15.6
15.6
15.3
15.1
14.9
14.7
14.8
14.5
14.3
14.2
13.5
10.7
9.4
8
15.7
21.8
28.3
33.8
36.5
40
45.2
47.8
49.3
50.7
53.9
55.3
57.7
67.7
120.7
152.7
-3.5
-3.6
-3.7
-3.7
-3.8
-3.8
-3.9
-4.0
-4.1
-4.2
-4.2
-4.3
-4.4
-4.4
-4.5
-5.0
-5.6
-6.3
-7.1
-7.8
-9.1
-10.2
-12.1
-14.5
-15.2
-13.2
-11.3
-10.0
-8.2
-6.3
-4.9
-4.1
-3.5
-31.7
-30.5
-28.9
-27.3
-26.0
-24.9
-24.0
-23.2
-22.5
-22.2
-21.8
-21.5
-21.3
-21.0
-20.8
-19.8
-19.0
-18.5
-18.1
-17.9
-17.7
-17.8
-18.2
-18.2
-17.6
-17.5
-17.3
-17.3
-17.3
-17.7
-18.1
-18.3
-18.6
MGA-71543 Typical Scattering Parameters and Noise Parameters
TC = 25°C, Vds = 2.4 V, Vref = -0.6 V, Id = 10 mA, ZO = 50Ω
Freq
(GHz)
S11
Mag.
S11
Ang.
S21
Mag.
S21
Ang.
S12
Mag.
S12
Ang.
S22
Mag.
S22
Ang.
S21
(dB)
Gmax
(dB)
RLin RLout Isolation
(dB) (dB) (dB)
0.3
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2
2.1
2.2
2.3
2.4
2.5
3
3.5
4
4.5
5
6
7
8
9
10
11
12
13
14
15
16
17
18
0.9
0.892
0.884
0.873
0.859
0.845
0.832
0.816
0.801
0.793
0.784
0.776
0.767
0.757
0.749
0.701
0.655
0.607
0.567
0.533
0.493
0.476
0.458
0.48
0.558
0.627
0.675
0.706
0.732
0.767
0.783
0.792
0.828
-11.5
-18.6
-25.7
-32.7
-39.4
-45.8
-52
-58.1
-63.9
-66.8
-69.6
-72.4
-75.3
-78
-80.9
-94.7
-108.9
-124.2
-140.4
-157.2
171.3
142.7
115.1
88.8
62.2
39.9
22.1
4.4
-13.3
-30.2
-44.7
-55.1
-66.5
5.023
4.993
4.919
4.83
4.728
4.623
4.509
4.412
4.312
4.259
4.211
4.171
4.117
4.07
4.029
3.829
3.659
3.49
3.335
3.163
2.828
2.526
2.271
2.094
1.935
1.712
1.512
1.351
1.2
1.022
0.849
0.713
0.622
169.8
162.7
156.3
150
143.9
138
132.4
126.9
121.5
119
116.4
113.7
111.2
108.7
106.2
94
81.9
70
58
46.1
23.9
2.9
-17
-36.3
-57.6
-78.3
-97.2
-116.2
-136.2
-155.6
-173.3
171.8
156
0.024
0.029
0.034
0.041
0.047
0.053
0.059
0.065
0.07
0.073
0.075
0.078
0.08
0.083
0.085
0.095
0.103
0.11
0.116
0.12
0.124
0.126
0.124
0.128
0.139
0.142
0.145
0.145
0.145
0.137
0.131
0.126
0.122
23.3
32.4
38.3
40.9
41.3
40.5
39.1
37.2
35
33.9
32.7
31.6
30.3
29
27.7
21.2
14.7
7.6
0.8
-6.3
-18.3
-30.1
-41.4
-47.3
-58.9
-71.7
-83.5
-96.3
-109.7
-123.1
-135.2
-145.7
-159.2
0.608
0.599
0.597
0.595
0.589
0.584
0.578
0.571
0.563
0.558
0.553
0.549
0.543
0.538
0.531
0.499
0.461
0.42
0.382
0.346
0.296
0.255
0.195
0.141
0.14
0.2
0.26
0.308
0.379
0.473
0.558
0.609
0.656
-8.7
-13.8
-19.1
-24.2
-29.1
-33.6
-37.8
-41.8
-45.7
-47.4
-49.2
-51
-52.7
-54.5
-56
-64.4
-73.1
-82.2
-92.6
-103.3
-123.4
-143.1
-159.7
176.8
120.6
76.5
50.1
26.4
3.1
-15.8
-29.5
-43
-57.3
14.0
14.0
13.8
13.7
13.5
13.3
13.1
12.9
12.7
12.6
12.5
12.4
12.3
12.2
12.1
11.7
11.3
10.9
10.5
10.0
9.0
8.0
7.1
6.4
5.7
4.7
3.6
2.6
1.6
0.2
-1.4
-2.9
-4.1
23.2
22.8
22.4
21.8
21.2
20.5
20.0
19.4
18.8
18.5
18.2
18.0
17.7
17.4
17.1
15.8
14.7
13.7
12.8
12.0
10.6
9.5
8.3
7.6
7.4
7.0
6.5
6.0
5.6
5.1
4.3
3.4
3.3
-0.9
-1.0
-1.1
-1.2
-1.3
-1.5
-1.6
-1.8
-1.9
-2.0
-2.1
-2.2
-2.3
-2.4
-2.5
-3.1
-3.7
-4.3
-4.9
-5.5
-6.1
-6.4
-6.8
-6.4
-5.1
-4.1
-3.4
-3.0
-2.7
-2.3
-2.1
-2.0
-1.6
Freq
(GHz)
Fmin
(dB)
GAMMA OPT
Mag
Ang
Rn/50
Ga
(dB)
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2
2.1
2.2
2.3
2.4
2.5
3
5
6
0.63
0.66
0.68
0.7
0.72
0.72
0.73
0.74
0.76
0.78
0.78
0.79
0.8
0.82
0.94
1.05
0.53
0.54
0.55
0.52
0.55
0.56
0.53
0.53
0.52
0.54
0.53
0.51
0.52
0.5
0.38
0.34
0.27
0.26
0.26
0.25
0.25
0.25
0.24
0.23
0.23
0.23
0.22
0.22
0.22
0.2
0.1
0.07
17.2
17.1
16.9
16.5
16.4
16.2
15.8
15.6
15.4
15.4
15.2
15
14.9
14.2
11.2
10
9
15.3
21.4
28.5
33.8
37
39.9
45.5
48.3
49.6
50.7
54
55.6
57.6
67.5
121.3
155
-4.3
-4.5
-4.5
-4.5
-4.6
-4.7
-4.8
-4.9
-5.0
-5.1
-5.1
-5.2
-5.3
-5.4
-5.5
-6.0
-6.7
-7.5
-8.4
-9.2
-10.6
-11.9
-14.2
-17.0
-17.1
-14.0
-11.7
-10.2
-8.4
-6.5
-5.1
-4.3
-3.7
-32.4
-30.8
-29.4
-27.7
-26.6
-25.5
-24.6
-23.7
-23.1
-22.7
-22.5
-22.2
-21.9
-21.6
-21.4
-20.4
-19.7
-19.2
-18.7
-18.4
-18.1
-18.0
-18.1
-17.9
-17.1
-17.0
-16.8
-16.8
-16.8
-17.3
-17.7
-18.0
-18.3
MGA-71543 Typical Scattering Parameters and Noise Parameters
TC = 25°C, Vds = 2.5 V, Vref = -0.5 V, Id = 20 mA, ZO = 50Ω
Freq
(GHz)
S11
Mag.
S11
Ang.
S21
Mag.
S21
Ang.
S12
Mag.
S12
Ang.
S22
Mag.
S22
Ang.
S21
(dB)
Gmax
(dB)
RLin RLout Isolation
(dB) (dB) (dB)
0.3
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2
2.1
2.2
2.3
2.4
2.5
3
3.5
4
4.5
5
6
7
8
9
10
11
12
13
14
15
16
17
18
0.889
0.88
0.87
0.858
0.842
0.826
0.81
0.792
0.774
0.765
0.755
0.746
0.736
0.724
0.716
0.664
0.616
0.566
0.528
0.495
0.46
0.448
0.436
0.462
0.544
0.617
0.668
0.7
0.728
0.763
0.78
0.789
0.825
-12.1
-19.5
-27
-34.3
-41.2
-47.9
-54.3
-60.7
-66.6
-69.6
-72.5
-75.4
-78.3
-81
-84
-98
-112.4
-128
-144.5
-161.5
166.9
138.5
111.1
85.4
59.7
38.1
20.6
3.1
-14.4
-31.2
-45.5
-55.8
-67.1
5.952
5.901
5.803
5.684
5.548
5.407
5.26
5.126
4.99
4.922
4.857
4.797
4.729
4.668
4.612
4.34
4.107
3.886
3.686
3.473
3.078
2.737
2.452
2.252
2.075
1.836
1.626
1.457
1.299
1.111
0.93
0.788
0.691
169.3
162
155.3
148.8
142.5
136.5
130.6
125
119.5
116.9
114.3
111.5
109
106.5
103.9
91.7
79.7
67.9
56.1
44.5
22.8
2.4
-17.1
-36
-56.8
-77.2
-95.6
-114.4
-134.1
-153.3
-170.8
174.2
158.3
0.023
0.027
0.032
0.037
0.043
0.049
0.055
0.06
0.065
0.067
0.069
0.072
0.074
0.076
0.078
0.087
0.095
0.102
0.108
0.113
0.119
0.124
0.125
0.133
0.146
0.15
0.153
0.153
0.153
0.144
0.137
0.132
0.126
22.8
32
38.2
40.9
41.5
40.9
39.6
38
36.1
35
34
32.9
31.8
30.6
29.4
23.6
17.8
11.3
5.1
-1.3
-12.5
-24.1
-35.3
-42.2
-54.9
-68.5
-81
-94.4
-108.4
-122.2
-134.6
-145.3
-159
0.541
0.532
0.531
0.528
0.523
0.518
0.511
0.505
0.497
0.493
0.488
0.483
0.477
0.473
0.467
0.435
0.399
0.36
0.324
0.291
0.245
0.208
0.15
0.099
0.114
0.191
0.256
0.305
0.377
0.469
0.552
0.599
0.645
-9
-14.1
-19.6
-24.7
-29.7
-34.2
-38.4
-42.4
-46.2
-47.9
-49.6
-51.5
-53
-54.7
-56.2
-64.1
-72.4
-81.1
-91.4
-102.1
-122.3
-142.5
-158.6
175.9
106.8
65.3
41.5
19.4
-2.4
-19.6
-32.5
-45.4
-59
15.5
15.4
15.3
15.1
14.9
14.7
14.4
14.2
14.0
13.8
13.7
13.6
13.5
13.4
13.3
12.7
12.3
11.8
11.3
10.8
9.8
8.7
7.8
7.1
6.3
5.3
4.2
3.3
2.3
0.9
-0.6
-2.1
-3.2
23.8
23.3
22.9
22.3
21.6
21.0
20.4
19.8
19.2
18.9
18.6
18.3
18.0
17.7
17.5
16.2
15.1
14.1
13.2
12.4
11.1
9.9
8.8
8.1
7.9
7.5
7.1
6.6
6.2
5.8
5.0
4.1
4.1
-1.0
-1.1
-1.2
-1.3
-1.5
-1.7
-1.8
-2.0
-2.2
-2.3
-2.4
-2.5
-2.7
-2.8
-2.9
-3.6
-4.2
-4.9
-5.5
-6.1
-6.7
-7.0
-7.2
-6.7
-5.3
-4.2
-3.5
-3.1
-2.8
-2.3
-2.2
-2.1
-1.7
Freq
(GHz)
Fmin
(dB)
GAMMA OPT
Mag
Ang
Rn/50
Ga
(dB)
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2
2.1
2.2
2.3
2.4
2.5
3
5
6
0.59
0.64
0.66
0.68
0.68
0.69
0.72
0.73
0.74
0.75
0.76
0.77
0.79
0.82
0.93
1.06
0.52
0.53
0.53
0.51
0.54
0.54
0.51
0.51
0.5
0.51
0.51
0.48
0.5
0.47
0.34
0.31
0.25
0.24
0.24
0.23
0.23
0.23
0.22
0.22
0.21
0.21
0.2
0.2
0.2
0.18
0.09
0.07
18.1
17.9
17.7
17.3
17.2
17
16.5
16.4
16.2
16.1
15.9
15.6
15.6
14.7
11.7
10.5
10
15.7
21.7
28.9
34.2
38.5
40.8
46.4
48.8
50.5
52.4
55.4
56.3
59
68.6
125.1
160.6
-5.3
-5.5
-5.5
-5.5
-5.6
-5.7
-5.8
-5.9
-6.1
-6.1
-6.2
-6.3
-6.4
-6.5
-6.6
-7.2
-8.0
-8.9
-9.8
-10.7
-12.2
-13.6
-16.5
-20.1
-18.9
-14.4
-11.8
-10.3
-8.5
-6.6
-5.2
-4.5
-3.8
-32.8
-31.4
-29.9
-28.6
-27.3
-26.2
-25.2
-24.4
-23.7
-23.5
-23.2
-22.9
-22.6
-22.4
-22.2
-21.2
-20.4
-19.8
-19.3
-18.9
-18.5
-18.1
-18.1
-17.5
-16.7
-16.5
-16.3
-16.3
-16.3
-16.8
-17.3
-17.6
-18.0
MGA-71543 Typical Scattering Parameters and Noise Parameters
TC = 25°C, Vds = 2.7 V, Vref = -0.3 V, Id = 40 mA, ZO = 50Ω
Freq
(GHz)
S11
Mag.
S11
Ang.
S21
Mag.
S21
Ang.
S12
Mag.
S12
Ang.
S22
Mag.
S22
Ang.
S21
(dB)
Gmax
(dB)
RLin RLout Isolation
(dB) (dB) (dB)
0.3
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2
2.1
2.2
2.3
2.4
2.5
3
3.5
4
4.5
5
6
7
8
9
10
11
12
13
14
15
16
17
18
0.889
0.88
0.87
0.857
0.841
0.823
0.807
0.788
0.769
0.76
0.75
0.739
0.73
0.718
0.709
0.656
0.608
0.559
0.521
0.49
0.457
0.447
0.436
0.462
0.546
0.621
0.672
0.705
0.733
0.768
0.786
0.794
0.83
-12.3
-19.8
-27.4
-34.9
-41.9
-48.7
-55.2
-61.6
-67.6
-70.6
-73.5
-76.3
-79.4
-82.2
-85.2
-99.3
-113.8
-129.5
-146
-163
165.4
137.1
109.8
84.5
59.1
37.8
20.3
2.9
-14.6
-31.3
-45.7
-56.1
-67.4
6.174
6.117
6.012
5.885
5.74
5.589
5.435
5.289
5.145
5.072
5.003
4.93
4.865
4.801
4.739
4.447
4.197
3.963
3.751
3.53
3.124
2.776
2.484
2.28
2.102
1.861
1.649
1.478
1.32
1.129
0.946
0.801
0.703
169.2
161.8
155.1
148.5
142.1
136
130.2
124.5
119
116.3
113.7
111
108.4
105.9
103.3
91
79
67.3
55.6
44.1
22.5
2.2
-17.2
-36
-56.7
-77
-95.4
-114.1
-133.9
-153.1
-170.6
174.5
158.5
0.022
0.025
0.029
0.035
0.04
0.046
0.051
0.055
0.06
0.062
0.064
0.066
0.068
0.07
0.072
0.081
0.089
0.095
0.101
0.106
0.114
0.12
0.122
0.132
0.146
0.152
0.155
0.157
0.157
0.149
0.141
0.136
0.131
22.3
31.6
37.9
40.9
41.7
41.4
40.2
38.7
37
36.1
35.1
34.2
33.1
32
30.9
25.5
20
14
8.2
2
-8.6
-19.8
-30.9
-37.8
-50.8
-64.7
-77.6
-91.3
-105.8
-119.7
-132.5
-143.6
-157.4
0.508
0.501
0.499
0.497
0.493
0.488
0.483
0.477
0.47
0.466
0.462
0.458
0.452
0.448
0.442
0.413
0.38
0.344
0.31
0.278
0.236
0.201
0.146
0.096
0.101
0.177
0.244
0.293
0.366
0.461
0.545
0.595
0.641
-8.9
-13.7
-19.1
-24.2
-29
-33.4
-37.5
-41.3
-45
-46.5
-48.2
-50
-51.4
-53
-54.5
-61.9
-69.7
-77.9
-87.7
-98
-117.5
-137.1
-151.4
-173.8
112
66.8
42.3
19.8
-2.2
-19.1
-32.1
-45.1
-58.8
15.8
15.7
15.6
15.4
15.2
14.9
14.7
14.5
14.2
14.1
14.0
13.9
13.7
13.6
13.5
13.0
12.5
12.0
11.5
11.0
9.9
8.9
7.9
7.2
6.5
5.4
4.3
3.4
2.4
1.1
-0.5
-1.9
-3.1
23.9
23.5
23.0
22.4
21.7
21.0
20.4
19.8
19.2
18.9
18.6
18.3
18.0
17.7
17.5
16.2
15.1
14.1
13.3
12.5
11.2
10.0
8.9
8.2
8.0
7.6
7.2
6.8
6.4
6.0
5.2
4.3
4.3
-1.0
-1.1
-1.2
-1.3
-1.5
-1.7
-1.9
-2.1
-2.3
-2.4
-2.5
-2.6
-2.7
-2.9
-3.0
-3.7
-4.3
-5.1
-5.7
-6.2
-6.8
-7.0
-7.2
-6.7
-5.3
-4.1
-3.5
-3.0
-2.7
-2.3
-2.1
-2.0
-1.6
Freq
(GHz)
Fmin
(dB)
GAMMA OPT
Mag
Ang
Rn/50
Ga
(dB)
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2
2.1
2.2
2.3
2.4
2.5
3
5
6
0.69
0.73
0.73
0.77
0.77
0.8
0.83
0.85
0.86
0.9
0.91
0.91
0.93
0.98
1.19
1.35
0.56
0.57
0.56
0.54
0.58
0.57
0.55
0.54
0.54
0.54
0.54
0.52
0.52
0.49
0.37
0.35
0.32
0.3
0.31
0.3
0.29
0.29
0.28
0.27
0.27
0.26
0.26
0.25
0.25
0.22
0.1
0.08
18.5
18.3
18
17.6
17.6
17.3
16.9
16.7
16.5
16.4
16.2
16
15.8
15
11.9
10.7
11
17.3
23.9
30.8
36.5
40.7
43.9
49.7
52.1
54.3
55.5
59.3
61
63.2
74.7
136
172.8
-5.9
-6.0
-6.0
-6.1
-6.1
-6.2
-6.3
-6.4
-6.6
-6.6
-6.7
-6.8
-6.9
-7.0
-7.1
-7.7
-8.4
-9.3
-10.2
-11.1
-12.5
-13.9
-16.7
-20.4
-19.9
-15.0
-12.3
-10.7
-8.7
-6.7
-5.3
-4.5
-3.9
-33.2
-32.0
-30.8
-29.1
-28.0
-26.7
-25.8
-25.2
-24.4
-24.2
-23.9
-23.6
-23.3
-23.1
-22.9
-21.8
-21.0
-20.4
-19.9
-19.5
-18.9
-18.4
-18.3
-17.6
-16.7
-16.4
-16.2
-16.1
-16.1
-16.5
-17.0
-17.3
-17.7
Part Number Ordering Information
No. of
Devices
Container
MGA-71543-TR1
MGA-71543-TR2
3000
10000
7" Reel
13" Reel
MGA-71543-BLK
MGA-71543-TR1G
100
3000
antistatic bag
7" Reel
MGA-71543-TR2G
MGA-71543-BLKG
10000
100
13" Reel
antistatic bag
Part Number
Note: For lead-free option, the part number will have the
character “G” at the end.
Package Dimensions
Outline 43
SOT-343 (SC70 4-lead)
1.30 (.051)
BSC
HE
E
1.15 (.045) BSC
b1
D
A
A2
A1
b
L
C
DIMENSIONS (mm)
SYMBOL
E
D
HE
A
A2
A1
b
b1
c
L
12
MIN.
1.15
1.85
1.80
0.80
0.80
0.00
0.25
0.55
0.10
0.10
MAX.
1.35
2.25
2.40
1.10
1.00
0.10
0.40
0.70
0.20
0.46
NOTES:
1. All dimensions are in mm.
2. Dimensions are inclusive of plating.
3. Dimensions are exclusive of mold flash & metal burr.
4. All specifications comply to EIAJ SC70.
5. Die is facing up for mold and facing down for trim/form,
ie: reverse trim/form.
6. Package surface to be mirror finish.
Device Orientation
REEL
TOP VIEW
END VIEW
4 mm
CARRIER
TAPE
8 mm
71
USER
FEED
DIRECTION
71
71
71
COVER TAPE
Tape Dimensions
For Outline 4T
P
P2
D
P0
E
F
W
C
D1
t1 (CARRIER TAPE THICKNESS)
Tt (COVER TAPE THICKNESS)
K0
10° MAX.
A0
DESCRIPTION
13
10° MAX.
B0
SYMBOL
SIZE (mm)
SIZE (INCHES)
CAVITY
LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER
A0
B0
K0
P
D1
2.40 ± 0.10
2.40 ± 0.10
1.20 ± 0.10
4.00 ± 0.10
1.00 + 0.25
0.094 ± 0.004
0.094 ± 0.004
0.047 ± 0.004
0.157 ± 0.004
0.039 + 0.010
PERFORATION
DIAMETER
PITCH
POSITION
D
P0
E
1.55 ± 0.10
4.00 ± 0.10
1.75 ± 0.10
0.061 + 0.002
0.157 ± 0.004
0.069 ± 0.004
CARRIER TAPE
WIDTH
THICKNESS
W
t1
8.00 + 0.30 - 0.10
0.254 ± 0.02
0.315 + 0.012
0.0100 ± 0.0008
COVER TAPE
WIDTH
TAPE THICKNESS
C
Tt
5.40 ± 0.10
0.062 ± 0.001
0.205 + 0.004
0.0025 ± 0.0004
DISTANCE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
F
3.50 ± 0.05
0.138 ± 0.002
CAVITY TO PERFORATION
(LENGTH DIRECTION)
P2
2.00 ± 0.05
0.079 ± 0.002
Designing with MGA-71543,
a Low Noise Amplifier with
Built-in Mitigated Bypass
Switches
Introduction
The MGA-71543 is a single stage
GaAs RFIC low noise amplifier
with an integrated bypass switch
(Figure 1).
RF IN
The MGA-71543 is a small LNA/
Bypass Switch MMIC that provides a low noise figure, a high
gain and high third order input
intercept point (IIP3) ideal for the
first stage LNA of PCS CDMA and
W-CDMA.
Device Description
The MGA-71543 is a single stage
GaAs IC with a built-in bypass
switch housed in a SOT-343
package. The device diagram is
shown in Figures 1 and 2.
RF OUT
Bypass Mode
RF in
The MGA-71543 offers an integrated solution of LNA with
adjustable IIP3. The IIP3 can be
fixed to a desired current level for
the receiver’s linearity requirements. The LNA has a bypass
switch function, which sets the
current to zero (2 µA) and provides low insertion loss when in
bypass mode. The bypass mode
also boosts dynamic range when
high level signal is being received.
Amplifier Mode
Switch & Bias
Figure 1. MGA-71543 Functional Diagram.
RF out
ing the same matching network at
both states (LNA State and Bypass
State). This makes the MGA-71543
ideal for use between duplexers
and image reject filters.
Many CDMA systems operate
20% LNA and 80% bypass mode.
For example, with the bypass
draw of zero and LNA of 10 mA,
the MGA-71543 allows an average
of only 2 mA current.
Figure 2. Simplified Schematic.
This application note describes a
low noise amplifier design using
Agilent Technologies’ MGA-71543.
+
–
+
–
Control
The MGA-71543 is designed for
receivers and transmitters operating from 100 MHz to 6 GHz, mainly
for CDMA applications i.e. IS-95
CDMA1900, CDMA800 and
W-CDMA. It can be used as a first
stage (Q1) in a CDMA PCS
1900 MHz application currently
filled by a single transistor. Its
bypass capability adds features
over the single transistor solution
with no performance loss. The
device can also be used as a driver
amplifier for CDMA800.
The purpose of the switch feature
is to prevent distortion of high
signal levels in receiver applications by bypassing the amplifier.
Furthermore, zero current draw,
when in bypass mode, saves
current thus improving battery
life.
The internally matched switching
circuit provides a 20 dB gain step
and also reduces gain ripple and
mismatch in system usage.
14
Input
&
DCref
Output
& Vd
Gain FET
GND
GND
& Vc
Figure 3. Bypass State Duplicates the In and
Out Impedance.
The MGA-71543 features a minimum noise figure of 0.8 dB and
16 dB available gain. The input
and output are partially matched,
and only a simple series/shunt
inductor match is required to
achieve low noise figure and
VSWR into 50Ω.
When set into the bypass mode,
both input and output are internally matched through a mitigative
circuit. This circuit draws no
current (less than 2 µA), yet
duplicates the in and out impedance of the LNA (Figure 3). This
allows the system user to have
minimum mismatch change from
LNA to Bypass mode, thus allow-
The MGA-71543 is a GaAs MMIC,
processed on Agilent’s cost
effective PHEMT (Pseudomorphic
High Electron Mobility Transistor
Technology). It is housed in the
SOT343 (SC70 4-lead) package.
Biasing
This IC can be biased like a
depletion mode discrete GaAsFET.
Two kinds of passive biasing can
be used: gate bias (Figure 4) and
source resistor bias method
(Figure 6).
Gate Bias
Pins 1 and 4 (Figure 4) are DC
grounded and a negative bias
voltage is applied to Pin 3 in
addition to the power supply (2.7
or 3 V) applied to Pin 2. This
method of biasing has the advantage of minimizing parasitic
source inductance because the
device is directly DC and RF
grounded.
3
Input
1
71
4
Vref
2
Output
& Vd
Figure 4. Gate Bias Method.
The DC supply at the input
terminal (Vref) can be applied
through a RF choke (inductor).
The voltage at Vref (Pin 3) with
respect to ground determines the
device current, Id. A plot of typical
Id vs. Vref is shown in Figure 5.
Maximum device current
(approximately 60 mA) occurs at
Vref = 0 (i.e. Vgs= 0).
When using the gate biasing
method, the bypass mode is
activated when Vds = 0V and
Vref < -2V.
The current of the amplifier (Id) is
set by the value of the resistor
Rbias. This resistor (Rbias) is
connected at Pin 4 as shown in
Figure 6 and RF bypassed. At least
two capacitors in parallel are
recommended for RF bypassing.
One capacitor (100 pF) for high
frequency bypassing and a second,
large value capacitor for better
low frequency bypassing. The
large value capacitor is added in
parallel to improve the IP3
because they help ground the low
frequency mixing terms that are
generated during a two tones test
(i.e. f1 – f2 term which is the
separation of the two tones
usually 1 to a few MHz) and thus
improve the IIP3.
3
Input
1
71
4
70
60
Output
& Vd
2
Rbias
Id (mA)
50
40
Figure 6. Source Resistor Bias Method.
30
Maximum current (about 60 mA)
occurs when Rbias= 0.
20
10
0
-1
-0.8
-0.6
-0.4
-0.2
Vref (V)
60
50
40
Id (mA)
This kind of biasing would not
usually be used unless a negative
supply voltage was readily
available.
where Rbias is in ohms and Id is the
desired device current in mA.
A simple method for DC grounding the input terminal (Pin 3) is to
use a shunt inductor that is also
part of the noise-matching
network.
Adaptive Biasing
For applications in which input
power levels vary over a wide
range, it may be useful to dynamically adapt the bias of the
MGA-71543 to match the signal
level. A sensor senses the signal
level at some point in the system
(usually in the baseband circuitry)
and automatically adjusts the bias
current of the amplifier accordingly. The main advantage of
adaptive biasing is conservation of
supply current (longer battery life)
by using only the amount of
current necessary to handle the
input signal without distortion.
30
3
20
Source Resistor Bias
This is the recommended method
because it only requires one
(positive) power supply. As shown
in Figure 6, Pin 3 is DC grounded
and pins 1 and 4 are RF bypassed.
Rbias = 964 (1 – 0.112 √ Id)
Id
Adaptive biasing of the
MGA-71543 can be accomplished
by simple digital means (Figure 8).
For instance simple electronic
switches can be used to control
the value of the source resistor in
discrete increment.
A plot of typical Id vs. Rbias is
shown in Figure 7.
Figure 5. Device Current vs. Vref.
The approximate value of the
external resistor, Rbias, may also
be calculated from:
DC
Return
Path
10
2
1
4
0
0
20
40
60
80
100
120
140
Rbias (Ω)
Figure 7. Device Current vs. Rbias.
Digital
Control
Figure 8. Adaptive Bias Control using Digital
Method.
15
Applying the Device Voltage
Common to all methods of
biasing, voltage Vd is applied to
the MGA-71543 through the RF
output connection (Pin 2). The
bias line is capacitively bypassed
to keep RF from the DC supply
lines and prevent resonant dips or
peaks in the response of the
amplifier. Where practical, it may
be cost effective to use a length of
high impedance transmission line
(usually λ /4 line) in place of the
RFC.
When using the gate bias method,
the applied device voltage, Vds, is
equal to voltage Vd (at pin 2) since
Vs is zero.
Vd ~ +2.5 V
RF
Input
RF
Output
2
1
71
3
4
Vref = -0.5 V
Controlling the Switch
The device current controls the
state of the MGA-71543 (amplifier
or bypass mode). For device
currents greater than 3 mA, it
functions as an amplifier. If a
lower current is drawn, the gain of
the amplifier is significantly
reduced and the performance will
degrade. If the device current is
set to zero, the MGA-71543 is
switched into a bypass mode in
which the signal is routed around
the amplifier with a loss of about
5.6 dB.
The simplest way of switching the
MGA-71543 to the bypass mode is
to open-circuit the terminals at
Pins 1 and 4. The bypass mode is
also set by increasing the source
resistance Rbias to greater than
1 MΩ. With the DC ground connection open, the internal control
circuit of the MGA-71543 autoswitches from amplifier mode into
a bypass mode and the device
current drops to near zero. Typical
bypass mode current is 2 µA.
Figure 9. DC Schematic for Gate Bias.
3
For source resistor biasing
method, the applied device
voltage, Vds, is Vd – Vs. The bias
control voltage is Vs (Pin 4) which
is set by the external bias resistor.
A source resistor bias circuit is
shown in Figure 10.
Vd = +3 V
2
1
RF
Input
RF
Output
71
3
1
4
Rbias
Bypass Switch
Enable
Figure 11. MGA-71543 Amplifier/Bypass State
Switching.
A digital switch can be used to
control the amplifier and Bypass
State as shown in Figure 11.
4
Rbias
Figure 10. DC Schematic for Source Bias.
16
2
Switching Speed
The speed at which the
MGA-71543 switches between
states is extremely fast. The
intrinsic switching speed is
typically around 10 ns. However in
practical circuits, the switching
speed is limited by the time
constants of the external bias
circuit components (current
setting resistor and bypass
capacitors). These external
components increase the switching time to around 100ns. Furthermore, the switching ON time is
slightly lower (faster) than the
switching OFF time (i.e. It
switches on faster).
Thermal issues
The Mean Time To Failure (MTTF)
of semiconductors is inversely
proportional to the operating
temperature.
When biased at 3V and 10 mA for
LNA applications, the power
dissipation is 3V x 10 mA = 30 mW.
The temperature increment from
the RFIC channel to its case is
then 30 mW x θ jc = 0.030 watt x
240°C/watt = 7.2°C. Subtracting
the channel-to-case temperature
rise from the suggested maximum
junction temperature of 150°C, the
resulting maximum allowable case
temperature is 143°C.
The worst case thermal situation
occurs when the MGA-71543 is
operated at its maximum operating conditions in an effort to
maximize output power or achieve
minimum distortion. A similar
calculation for the maximum
operating bias of 4.2 volts and
50 mA yields a maximum allowable case temperature of 100°C.
(i.e. 210 mW x θ jc = 0.210 watt x
240°C/watt = 50.4°C
150°C – 50.4°C = 100°C.)
This calculation assumes the
worst case of no RF power being
extracted from the device. When
operated in a saturated mode,
both power-added efficiency and
the maximum allowable case
temperature will increase.
Note: “Case” temperature for
surface mount packages such as
the SOT-343 refers to the interface
between the package pins and the
mounting surface, i.e., the temperature at the PCB mounting
pads. The primary heat path from
the RFIC chip to the system
heatsink is by means of conduction through the package leads
and ground vias to the ground
plane of the PCB.
Grounding Consideration in
PCB Layout
The MGA-71543 requires careful
attention during grounding. Any
device with gain can be made to
oscillate if feedback is added.
Since poor grounding adds series
feedback, it can cause the device
to oscillate. Poor grounding is one
of the most common causes of
oscillation in RF components.
Careful attention should be used
when RF bypassing the ground
terminals when the device is
biased using the source resistor
method.
Package Footprint
The PCB pad print for the miniature, 4-lead SOT-343 (SC70)
package is shown in Figure 12.
1.30
0.051
1.00
0.039
2.00
0.079
0.60
0.024
.090
0.035
1.15
0.045
Dimensions in inches
mm
Figure 12. Recommended PCB Pad Layout for
Agilent’s SC70 4L/SOT-343 Products.
The layout is shown with a
footprint of the MGA-71543
superimposed on the PCB pads for
reference.
17
RF bypass
For layouts using the source
resistor method of biasing, both of
the ground terminals of the
MGA-71543 must be well bypassed
to maintain device stability.
Beginning with the package pad
print in Figure 12, and RF layout
similar to the one shown in
Figure 13 is a good starting point
for using the MGA-71543 with
capacitor-bypassed ground
terminals. It is a best practice to
use multiple vias to minimize
overall ground path inductance.
Size 0402
recommended
for the bypass
capacitors
71
LNA Application
In the following sections the LNA
design is described in a more
general way. Sample evaluation
boards for 1900 MHz and 800 MHz
are shown in a table (Table 1) and
the appropriate board diagram is
shown (Figures 22 and 23). A
second smaller size board is also
shown (Figures 25 and 26) with
the corresponding table (Table 2).
The smaller board is an example
of reducing the size of the layout,
more suitable for handset manufacturers. For low noise amplifier
application, the LNA is typically
biased 6 to 20 mA.
The MGA-71543 is a conditionally
stable device, therefore, the
proper input and output loads
must be presented in addition to
properly RF grounding the device.
Please refer to the stability section
for tips on preventing oscillation.
The LNA can be switched ON or
OFF by a simply varying the
resistor to its ground leads as
described in previous sections.
Figure 13. Layout for RF Bypass.
PCB Materials
0.031 inches thick of FR-4 or G-10
type dielectric materials are
typical choices for most low cost
wireless applications using single
layer printed boards. As an
alternative, a Getek material with
a multilayer printed circuit board
can be used for a smaller size
board, where:
1st layer: RF routing layer
2nd layer: Ground layer
3rd layer: Power (DC) routing layer
4th layer: Other RF routing layer
The spacing between the layers is
as follows:
Between the 1st and 2nd: 0.005"
Between the 2nd and 3rd: 0.020"
Between the 3rd and 4th: 0.005"
Matching Networks for the LNA
Γin
Input
Match
ΓL
Output
Match
LNA
50Ω
50Ω
Γs
or
Γopt
Γopt
Figure 14. Input and Output Matching
Terminology.
The input matching network
determines the noise figure and
return loss (S11) of our amplifier.
The output-matching network
determines the IP3 and output
return loss (S22). Furthermore,
both input and output matching
networks influence the gain. The
best gain (Maximum Available
Gain-MAG) and lowest input
return loss is obtained when both
the input and output are conju-
gately matched to 50Ω. For
instance at the input, when Γ s =
Γin* the highest gain with the best
power transfer is obtained where
Γs is the source reflection coefficient presented to the input pin.
For best noise, Γs = Γ OPT, where
ΓOPT is the source reflection
coefficient for optimum NF match
and is determined empirically
(experimentally). However, an
input match where Γs = ΓOPT does
not necessarily yield the best
return loss nor the best gain.
Input Match
To allow flexibility for the designer, the LNA is intended to be
used with external matching
network at the input.
The noise performance of a two
port can be determined if the
values of the noise parameters
Fmin, rn = Rn /50 and ΓOPT are
known (shown in the datasheet),
where these parameters are given
by:
F50 = Fmin +
4rn|Γs – ΓOPT| 2
(1 – |Γs| 2 ) |1 + ΓOPT| 2
2
rn = (F50 – Fmin) |1 + ΓOPT|
4|ΓOPT| 2
ΓOPT = ZOPT – ZO
ZOPT + ZO
Where
Fmin is the minimum noise figure
that is obtained when Γs = ΓOPT .
Rn is the noise resistance that
indicates the sensitivity of the
noise performance.
Γs is the source reflection coefficient presented to the input pin.
ΓOPT is the source reflection
coefficient for optimum NF match.
Any change in Γs affects the noise
figure of our amplifier. To obtain
the best noise figure, the following
relation: Γs = ΓOPT must be
18
satisfied. However, this might
affect our return loss at the input
because it creates more mismatch
(at the input) and there is less
power transfer to the LNA.
Therefore the best solution should
be the one that gives a reasonable
input return loss with the best
noise figure associated to it.
The noise figure F of an amplifier
is determined by the input matching circuit. The output matching
does not affect the noise (has a
significantly minimal effect on
noise figure).
To obtain the best noise match a
simple two elements match is
used at the input of the device.
Using the ΓOPT magnitude and
phase at the frequency of interest,
the noise match is done. The
topology that has a capacitor to
ground is ignored because it does
not allow the input to be DC
grounded as is required by the
source bias method. Therefore the
series-L-shunt-L topology is used.
The final values of the noise
matching circuit (input match)
was a result of some more empirical tuning in the lab that was a
compromise between the various
important parameters. Typical
Gain, noise and stability circles
are shown in Figures 17 – 20. Most
simulations were done using
Agilent-EEsof’s Advanced Design
System (ADS).
Stability
A stable circuit is a circuit that
does not oscillate. Oscillation can
take the form of spurious signal
and noise generation. This usually
results in changes in DC operating
point (bias level fluctuates). The
oscillations can be triggered by
changes in the source (input
match), load (output match), bias
level and last but not least:
improper grounding.
Design for Stability
The main potential for oscillation
with the MGA-71543 is improper
grounding and/or improper RF
bypass capacitors. Any device
with gain can be made to oscillate
if feedback is added. Proper
grounding may be achieved by
minimizing inductance paths to
the ground plane. Passive components should be chosen for high
frequency operation. Bias circuit
self resonance due to inadequate
bypass capacitors or inadequate
grounding may cause high frequency, out of band, instability.
Smaller 0402 size bypass capacitors are recommended to minimize parasitic inductance and
resonance of the bias circuit.
Statistical Parameters
Several categories of parameters
appear within the electrical
specification portion of the
MGA-71543 datasheet. Parameters
may be described with values that
are either “minimum or maximum”, “typical” or “standard
deviations”.
The values for parameters are
based on comprehensive product
characterization data, in which
automated measurements are
made on a statistically significant
number of parts taken from
nonconsecutive process lots of
semiconductor wafers. The data
derived from product characterization tends to be normally
distributed, e.g. fits the standard
bell curve.
68%
95%
99%
-3σ
-2σ
-1σ Mean (µ) +1σ +2σ
(typical)
Parameter Value
Figure 15. Normal Distribution Curve.
+3σ
Parameters considered to be the
most important to system performance are bounded by minimum
or maximum values. For the
MGA-71543, these parameters are:
Vref test, NFtest, Gatest, IIP3 test, and
ILtest. Each of the guaranteed
parameters is 100% tested as part
of the normal manufacturing and
test process.
Standard statistics tables or
calculations provide the probability of a parameter falling between
any two values, usually symmetrically located about the mean.
Referring to Figure 15 for
example, the probability of a
parameter being between ±1σ is
68.3%; between ±2σ is 95.4%; and
between ±3σ is 99.7%.
Values for most of the parameters
in the table of Electrical Specifications that are described by typical
data are the mathematical mean
(µ), of the normal distribution
taken from the characterization
data. For parameters where
measurements or mathematical
averaging may not be practical,
such as S-parameters or Noise
parameters and the performance
curves, the data represents a
nominal part taken from the
center of the characterization
distribution. Typical values are
intended to be used as a basis for
electrical design.
Phase Reference Planes
The positions of the reference
plane used to specify S-parameters
and Noise Parameters for the
MGA-71543 are shown in
Figure 16. As seen in the illustration, the reference planes are
located at the point where the
package leads contact the test
circuit.
To assist designers in optimizing
not only the immediate amplifier
circuit using the MGA-71543, but
to also evaluate and optimize
tradeoffs that affect a complete
wireless system, the standard
deviation (σ) is provided for
many of the Electrical Specification parameters (at 25°C). The
standard deviation is a measure of
the variability about the mean. It
will be recalled that a normal
distribution is completely described by the mean and standard
deviation.
19
Reference Planes
Electronic devices may be subjected to ESD damage in any of
the following areas:
Storage & handling
Inspection
Assembly & testing
In-circuit use
The MGA-71543 is an ESD Class 1
device. Therefore, proper ESD
precautions are recommended
when handling, inspecting, testing,
assembling, and using these
devices to avoid damage.
Any user-accessible points in
wireless equipment (e.g., antenna
or battery terminals) provide an
opportunity for ESD damage.
For circuit applications in which
the MGA-71543 is used as an input
or output stage with close coupling to an external antenna, the
RFIC should be protected from
high voltage spikes due to human
contact with the antenna.
Test Circuit
Figure 16. Phase Reference Planes.
Electrostatic Sensitivity
RFICs are electrostatic discharge (ESD)
sensitive devices.
Although the MGA-71543 is robust
in design, permanent damage may
occur to these devices if they are
subjected to high-energy electrostatic discharges. Electrostatic
charges as high as several thousand volts (which readily accumulate on the human body and on
test equipment) can discharge
without detection and may result
in failure or degradation in
performance and reliability.
Figure 17. In-circuit ESD Protection.
A best practice, illustrated in
Figure17, is to place a shunt
inductor (RFC) at the antenna
connection to protect the receiver
and transmitter circuits. It is often
advantageous to integrate the
RFIC into a diplexer or T/R switch
control circuitry.
Demonstration Board
Source unstable
Source stability circle
Source stable
G = 18.8 dB
Load stability circle
Load unstable
region
G = 17.8 dB
Gain Circles
G = 16.8 dB
NF = 0.75 dB
Load stable
region
G = 15.8 dB
Noise Circles
G = 14.8 dB
NF = 0.95 dB
NF = 1.15 dB
NF = 1.35 dB
NF = 1.55 dB
Figure 18. Gain, Noise and Stability Circles.
Figure 19. Noise Circles F = 1900 MHz,
Step Size: 0.2 dB.
Vd
+3.0V
C11
Figure 20. Gain Circle F = 1900 MHz,
Step Size: 1.0 dB.
C10
L3
C9
R4
C4
C5
1
2
71
RF
Input
L1
C1
4
3
C8
C6
C7
L2
C2
R1
SW1
R3
SW2
R2
Figure 22. Schematic Diagram of Evaluation Board Amplifier.
20
RF
Output
Figure 21. Load and Source Stability Circles.
Agilent
MGA-71543
Eval Circuit
Vd
GND
C11
C10
C4
IN
C1
C5
R4
L2
OUT
C9
C6
L1
L3
C7
C2
R3
C8
R2
R1
Vc
EB 7/00
REV 2
Figure 23. Amplifier Evaluation Circuit with Component Designators. Actual board size is 1.1 x 1.3 inches, 0.031 inches thick.
Board Designation
Description
PCS-1900
800 MHz
Part Number
Package
71
DUT[1]
DUT[1]
MGA-71543
SOT-343 (4 lead SC-70 package)
C1
100 pF
8.2 pF
Size 0402
C2, C5, C6, C7, C10
100 pF
100 pF
Size 0402
C9
47 pF
2.7 pF
Size 0402
C4, C8, C11
0.01 µF
0.01 µF
Size 0603 or 0402
L1
1.5 nH
18 nH
TOKO LL1005
Size 0402
L2
2.7 nH
33 nH
TOKO LL1005
Size 0402
L3
3.9 nH
33 nH
TOKO LL1005
Size 0402
R1
51Ω
51Ω
Size 0402
R2
115Ω
115Ω
Size 0805 (for 6mA Bias)
R4 / L4
0Ω (1900)
18 nH
R3
60Ω
60Ω
Note 1: Device under Test
Table 1. Component Values for 1900 MHz and 800 MHz.
21
— / LL1608-FH or 1005-FH
Size 0805 (Jumper) / Size 0603 (inductor)
Size 0805 (for 10mA Bias)
Digital
Base-band
Processor
Analog
Front-end
MGA-71543
Demodulator
ADC
ADC
Dual
Synthesizer
Dual VCO
DAC
DAC
RF Control Signal
(PDM
)
Figure 24. System Level Overview of MGA-71543 for Handset Designers.
PCS_OUT
These are the actual necessary components.
The other connectors and board space are only for production.
blue2_lna
rev2.1
RF3
U4
C38
C44
L7
C9
R37
U2
R38
C47
C37
R24
33.1 mm
1.303 in
L6
R24
R25
R21
C8
GND
Cell_LNA
R20
PCS_IN
C44
C37 R25
R21
C8
L5
L7
R38
C12
C36
C47
PCS_LNA
C9
R37
L5
U2
L25
C12
PCS_LNA
C38
L6
PCS_IN
RF1
L25
C36
R20
GND
R16
R17
PCS_LNA
20.1 mm
0.791 in
PCS_LNA
AGILENT TECHNOLOGIES
Cell_LNA
R18
J7
R28
J8
GND
Vcc
J9
Vcc
U4
J10
Software controlling the switch
Figure 25. Small Size Amplifier Board with Components for Handset Focussed Designers.
22
Manual switch control
4 layer Board
Designation
Description
PCS-1900
Part Number
Package
U2 or 71
DUT[1]
MGA-71543
SOT-343 (SC-70)
U4 or O3
Switch b/n Gnd resistors
FDG6303N
Dual N-channel, Digital FET
C12
2.2 pF
Size 0402
C8, C47
0.033 µF
Size 0402
C9, C44
100 pF
Size 0402
C38
Not used
C36, C37
27 pF
L5
3.9 nH
TOKO LL1005
Size 0402
L6
4.7 nH
TOKO LL1005
Size 0402
L7
1.5 nH
TOKO LL1005
Size 0402
L25
Not used
For tuning/Not used here
R38
51Ω
Size 0402
R20
36Ω
Size 0402 (for 16 mA Bias)
R21
56Ω
Size 0402 (for 11 mA Bias)
R24, R25
6Ω
Size 0402
R16, R17
0Ω
Size 0402 (Jumper)
R37
0Ω
Size 0402 (Jumper)
R18, R28
Not used
Used with other FET switches
Size 0402
Note 1: Device under Test
Table 2. Component Values for 1900 MHz Amplifier on Smaller Board.
References
1. Application note RLM020199, “Designing with the
MGA-72543 RFIC Amplifier/Bypass Switch”.
2. G.D.Vendelin, A.M.Pavio and U.L.Rhode,
“Microwave Circuit Design Using Linear and
Nonlinear Techniques”.
23
PCS_OUT
MGA-71543
blue2_lna
rev2.1
L25
L5
C47
C44
C37 R25
R21
U4
J8
J7
6 or 3
2 or 5
5 or 2
3 or 6
4 or 1*
G2
AGILENT TECHNOLOGIES
S2
03
Vcc
GND
J9
1 or 4*
GND
Cell_LNA
R20
Switch & Bias Control
R24
Vcc
C8
J10
RF OUT
R37
PCS_LNA
L6
C9
U2
L7
R38
PCS_LNA
PCS_IN
C38
RF IN
C12
C36
D1
D2
SC70-6
S1
G1
U4 = FDG6303N
Dual N-channel, Digital FET
MGA-71543
IN
C36
L7
C9
L6
Not used in this case.
These could be used with
other digital FET to select
more discrete current values.
R38
OUT
C12
L5
R38
C37
C47
C44
C8
R25
R20
R24
R21
1 or 4*
R28
(0Ω Jumper)
R18
(0Ω Jumper)
6 or 3
2 or 5
5 or 2
3 or 6
4 or 1*
R16 (0Ω Jumper)
FDG6303N
R17 (0Ω Jumper)
Selects current
set by R21
Figure 26. LNA Bypass Circuit Control on Small Test Board.
For product information and a complete list of Agilent
contacts and distributors, please go to our web site.
www.agilent.com/semiconductors
E-mail: SemiconductorSupport@agilent.com
Data subject to change.
Copyright © 2004 Agilent Technologies, Inc.
Obsoletes 5988-4553EN
November 22, 2004
5989-1807EN
Selects current
set by R20
Vd = 3 Volt