Agilent MGA-71543 Low Noise Amplifier with Mitigated Bypass Switch Data Sheet Features • Lead-free Option Available Description Agilent’s MGA-71543 is an economical, easy-to-use GaAs MMIC Low Noise Amplifier (LNA), which is designed for adaptive CDMA and W-CDMA receiver systems. The MGA-71543 is part of the Agilent Technologies complete CDMAdvantage RF chipset. The MGA-71543 features a minimum noise figure of 0.8 dB and 16 dB available gain from a single stage, feedback FET amplifier. The input and output are partially matched, and only a simple series/shunt inductor match is required to achieve low noise figure and VSWR into 50Ω. When set into the bypass mode, both input and output are internally matched through a mitigative circuit. This circuit draws no current, yet duplicates the in and out impedance of the LNA. This allows the system user to have minimum mismatch change from LNA to bypass mode, which is very important when the MGA-71543 is used between duplexers and/or filters. The MGA-71543 is designed for CDMA and W-CDMA receiver systems. The IP3, Gain, and mitigative network are tailored to these applications where filters are used. Many CDMA systems operate 20% LNA mode, 80% bypass. With the bypass current draw of zero and LNA of 10 mA, the MGA-71543 allows an average 2 mA current. The MGA-71543 is a GaAs MMIC, processed on Agilent’s cost effective PHEMT (Pseudomorphic High Electron Mobility Transistor Technology). It is housed in the SOT343 (SC70 4-lead) package. • Noise figure: 0.8 dB (NFmin) • Gain: 16 dB • Average Idd = 2mA in CDMA handset • Bypass switch on chip Loss = -5.6 dB (Id < 5 µA) IIP3 = +35 dBm • Adjustable input IP3: 0 to +9 dBm • 2.7 V to 4.2 V operation Applications • CDMA (IS-95, J-STD-008) Receiver LNA • Transmit Driver Amp • W-CDMA Receiver LNA • TDMA (IS-136) handsets Surface Mount Package SOT-343/4-lead SC70 Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model (Class A) ESD Human Body Model (Class 0) Refer to Agilent Application Note A004R: Electrostatic Discharge Damage and Control. Pin Connections and Package Marking 3 INPUT & Vref RF Gnd & Vs 4 1 71x The MGA-71543 offers an integrated solution of LNA with adjustable IIP3. The IIP3 can be fixed to a desired current level for the receiver’s linearity requirements. The LNA has a bypass switch function, which provides low insertion loss at zero current. The bypass mode also boosts dynamic range when high level signal is being received. • Operating frequency: 0.1 GHz ~ 6.0 GHz RF Gnd & Vs 2 OUTPUT & Vd Functional Block Diagram Simplified Schematic + – RF OUT Input + – 1.5 nH 71 RF IN Evaluation Test Circuit (single positive bias) 2.7 nH Control Input & Vref Output Output & Vd Gain FET Rbias Vd Switch & Bias RF Gnd & Vs RF Gnd control MGA-71543 Absolute Maximum Ratings [1] Symbol Parameter Units Absolute Maximum Operation Maximum Vd Maximum Input to Output Voltage [4] V 5.5 4.2 Vc Maximum Input to Ground DC Voltage [4] V +.3 -5.5 +.1 -4.2 Id Supply Current mA 60 50 Pd Power Dissipation [2] mW 240 200 Pin CW RF Input Power dBm +15 +10 Tj Junction Temperature °C 170 150 TSTG Storage Temperature °C -65 to +150 -40 to +85 Thermal Resistance: [2, 3] θjc = 240°C/W Notes: 1. Operation of this device in excess of any of these limits may cause permanent damage. 2. Ground lead temperature at 25°C. 3. Thermal resistance measured by 150°C Liquid Crystal Measurement method. 4. Maximum rating assumes other parameters are at DC quiescent conditions. Product Consistency Distribution Charts [5,6] 150 150 Cpk = 2.00 Std = 0.24 +3 Std -3 Std 60 30 0 14.4 +3 Std -3 Std 60 0 15.4 16.4 17.4 Figure 1. Gain @ 2 GHz, 3V, 10 mA. LSL = 14.4, Nominal = 15.9, USL = 17.4 Notes: 5. Distribution data sample size is 450 samples taken from 9 different wafers. Future wafers allocated to this product may have nominal values anywhere within the upper and lower specification limits. 6. Measurements made on production test board, Figure 4. This circuit represents a trade-off between an optimal noise match and a realizable match based on production test requirements at 10 mA bias current. 90 -3 Std +3 Std 60 30 30 GAIN (dB) 2 90 FREQUENCY 90 Cpk = 2.33 Std = 0.02 120 120 FREQUENCY FREQUENCY 120 150 Cpk = 1.16 Std = 0.96 1 2 3 4 5 6 7 8 IIP3 (dBm) Figure 2. IIP3 @ 2 GHz, 3V, 10 mA. LSL = 1.0, Nominal = 3.0, USL = 8.0 Excess circuit losses have been deembedded from actual measurements. Performance may be optimized for different bias conditions and applications. Consult Application Note for details. 0 0.85 0.95 1.05 1.15 1.25 1.35 NF (dB) Figure 3. NF @ 2 GHz, 3V, 10 mA. LSL = 0.85, Nominal = 1.08, USL = 1.45 1.45 MGA-71543 Electrical Specifications Tc = +25°C, Zo = 50Ω, Id = 10 mA, Vd = 3V, unless noted Units Min. Typ. Max. σ [1] Id = 10 mA V -0.86 -0.65 -0.43 0.041 Vd = 3.0 V (= Vds - Vref) Id = 10 mA dB 1.1 1.45 0.02 f = 2.01 GHz Vd = 3.0 V (= Vds - Vref) Id = 10 mA dB 14.4 15.9 17.4 0.24 IIP3 test f = 2.01 GHz Vd = 3.0 V (= Vds - Vref) Id = 10 mA dBm 1 3.0 0.96 Gain, Bypass f = 2.01 GHz Vds = 0 V, Vref = -3V Bypass Mode[6] Id = 0 mA dB -6.4 -5.6 0.12 Ig test Bypass Mode Vds = 0 V, Vref = -3 V[6] Id = 0 mA µA 2.0 1.5 NFmin [3] Minimum Noise Figure As measured in Figure 5 Test Circuit (Γopt computed from s-parameter and noise parameter performance as measured in a 50Ω impedance fixture) f = 0.9 GHz f = 1.5 GHz f = 1.9 GHz f = 2.1 GHz f = 2.5 GHz f = 6.0 GHz dB 0.7 0.7 0.8 0.8 0.8 1.1 Ga[3] Associated Gain at Nfo As measured in Figure 5 Test Circuit (Gopt computed from s-parameter and noise parameter performance as measured in a 50Ω impedance fixture) f = 0.9 GHz f = 1.5 GHz f = 1.9 GHz f = 2.1 GHz f = 2.5 GHz f = 6.0 GHz dB 17.1 16.4 15.8 15.4 14.9 10.0 P1dB Output Power at 1 dB Gain Compression As measured in Evaluation Test Circuit with source resistor biasing [4,5] Frequency = 2.01 GHz Id = 6 mA Id = 10 mA Id = 20 mA Id = 40 mA dBm +3.0 +7.4 +13.1 +15.5 IIP3 Input Third Order Intercept Point As measured in Figure 4 Test Circuit [5] Frequencies = 2.01 GHz, 2.02 GHz Id = 6 mA Id = 10 mA Id = 20 mA Id = 40 mA dBm -0.5 +3.0 +7.4 +8.7 Switch Bypass Switch Rise/Fall Time (10% - 90%) As measured in Evaluation Test Circuit Intrinsic Eval Circuit nS 10 100 RLin Input Return Loss as measured in Fig. 4 f = 2.01 GHz dB 6.0 0.31 RLout Output Return Loss as measured in Fig. 4 f = 2.01 GHz dB 10.9 0.65 ISOL Isolation |s12|2 as measured in Fig. 5 f = 2.01 GHz dB -22.5 Symbol Parameter and Test Condition Vref test Vds = 2.4 V NF test f = 2.01 GHz Gain test Notes: 1. Standard Deviation and Typical Data based at least 450 part sample size from 9 wafers. Future wafers allocated to this product may have nominal values anywhere within the upper and lower spec limits. 2. Measurements made on a fixed tuned production test circuit (Figure 4) that represents a trade-off between optimal noise match, maximum gain match, and a realizable match based on production test board requirements at 10 mA bias current. Excess circuit losses have been de-embedded from actual measurements. Vd=Vds-Vref where Vds is adjusted to maintain a constant Vd bias equivalent to a single supply 3V bias application. Consult Applications Note for circuit biasing options. 3. Minimum Noise Figure and Associated Gain data computed from s-parameter and noise parameter data measured in a 50Ω system using ATN NP5 test system. Data based on 10 typical parts from 9 wafers. Associated Gain is the gain when the product input is matched for minimum Noise Figure. 4. P1dB measurements were performed in the evaluation circuit with source resistance biasing. As P1dB is approached, the drain current is maintained near the quiescent value by the feedback effect of the source resistor in the evaluation circuit. Consult Applications Note for circuit biasing options. 5. Measurements made on a fixed tuned production test circuit that represents a trade-off between optimal noise match, maximum gain match, and a realizable match based on production test board requirements at 10 mA bias current. Performance may be optimized for different bias conditions and applications. Consult Applications Note. 6. The Bypass Mode test conditions are required only for the production test circuit (Figure 4) using the gate bias method. In the preferred source resistor bias configuration, the Bypass Mode is engaged by presenting a DC open circuit instead of the bias resistor on Pin 4. 3 MGA-71543 Typical Performance Tc = 25°C, Zo = 50, Vd = 3V, Id = 10 mA unless stated otherwise. Data vs. frequency was measured in Figure 5 test system and was optimized for each frequency with external tuners. 960 pF RF Input RF Input Vds 56 pF 56 pF 2.7 nH 1 3.9 nH Vref 4 2 Vref RF Output RF Output 56 pF Figure 4. MGA-71543 Production Test Circuit. Figure 5. MGA-71543 Test Circuit for S, Noise, and Power Parameters over Frequency. 1.5 20 1.3 17 18 1.1 0.9 0.7 INPUT IP3 (dBm) 15 ASSOCIATED GAIN (dB) NOISE FIGURE (dB) Bias Tee 71 3 71 1.5 nH 14 11 2.7V 3.0V 3.3V 1 2 3 4 5 9 6 6 2.7V 3.0V 3.3V 0 5 0 12 3 8 2.7V 3.0V 3.3V 0.5 -3 0 1 FREQUENCY (GHz) 2 3 4 5 0 6 1 FREQUENCY (GHz) Figure 6. Minimum Noise Figure vs. Frequency and Voltage. 2 3 4 5 6 FREQUENCY (GHz) Figure 7. Associated Gain with Fmin vs. Frequency and Voltage. 20 Figure 8. Input Third Order Intercept Point vs. Frequency and Voltage. 18 -40°C +25°C +85°C 17 15 INPUT IP3 (dBm) ASSOCIATED GAIN (dB) Vds Test Fixture Bias Tee 14 11 12 m3 9 6 m2 3 -40°C +25°C +85°C 8 0 5 m1 -3 0 1 2 3 4 5 0 6 1 FREQUENCY (GHz) Figure 9. Associated Gain with Fmin vs. Frequency. 2 3 4 5 6 FREQUENCY (GHz) 500 MHz to 6 GHz Figure 10. Input Third Order Intercept Point vs. Frequency and Temperature. Figure 11. S11 Impedance vs. Frequency. (m1 = Sw, m2 = 6 mA, m3 = 10 mA) 18 0 15 m2 m1 12 OP1dB (dBm) m3 INSERTION LOSS (dB) -2 -4 -6 9 6 3 -8 -3 -10 0 500 MHz to 6 GHz Figure 12. S22 Impedance vs. Frequency. (m1 = Sw, m2 = 6 mA, m3 = 10 mA) 4 2.7V 3.0V 3.3V 0 Gass w/Fmin Minimum 1 2 3 4 5 FREQUENCY (GHz) Figure 13. Bypass Mode Associated Insertion Loss with Fmin Match and Minimum Loss vs. Frequency. 6 0 1 2 3 4 5 6 FREQUENCY (GHz) Figure 14. Output Power at 1 dB Compression vs. Frequency and Voltage. [4] MGA-71543 Typical Performance, continued 18 18 15 15 15 12 12 12 9 6 3 OP1dB (dBm) 18 OP1dB (dBm) INPUT IP3 (dBm) Tc = 25°C, Zo = 50, Vd = 3V, Id = 10 mA unless stated otherwise. Data vs. frequency was measured in Figure 5 test system and was optimized for each frequency with external tuners. 9 -6 3 6 mA 10 mA 20 mA 0 1 2 3 4 5 6 -3 0 10 FREQUENCY (GHz) Figure 15. Input Third Order Intercept Point vs. Frequency and Current. -40°C +25°C +85°C 0 -3 0 6 3 -40°C +25°C +85°C 0 -3 9 20 30 40 0 10 20 30 40 Idsq CURRENT (mA) Id CURRENT (mA) Figure 16. Output Power at 1 dB Compression vs. Idsq Current and Temperature (Passive Bias, Vref Fixed) [4]. Figure 17. Output Power at 1 dB Compression vs. Current and Temperature (Source Resistor Bias in Evaluation Circuit) [5]. 12 20 2.2 2.0 17 1.8 9 14 GAIN (dB) 1.4 NF (dB) INPUT IP3 (dBm) 1.6 1.2 1.0 0.8 11 8 6 3 0.6 0.4 -40°C +25°C +85°C 5 0.2 0 -3 2 0 10 20 30 40 Id CURRENT (mA) 0 10 20 30 40 Id CURRENT (mA) Figure 18. Minimum Noise Figure vs. Current (2 GHz). Figure 19. Gain vs. Current and Temperature (2 GHz). 1.0 Vs (V) 0.8 0.6 0.4 0.2 0 0 10 20 30 40 Id CURRENT (mA) Figure 21. Control Voltage vs. Current. Notes: 4. P1dB measurements were performed with passive biasing in Production Test Circuit (Figure 4.). Quiescent drain current, Idsq, is set by a fixed Vref with no RF drive applied. As P1dB is approached, the drain current may increase or decrease depending on frequency and DC bias point which typically 5 -40°C +25°C +85°C 0 results in higher P1dB than if the drain current is maintained constant by active biasing. 5. P1dB measurements were performed in Evaluation Test Circuit with source resistor biasing which maintains the drain current near the quiescent value under large signal conditions. 0 10 20 30 Id CURRENT (mA) Figure 20. Input Third Intercept Point vs. Current and Temperature (2 GHz). 40 MGA-71543 Typical Scattering Parameters TC = 25°C, Vds = 0V, Vref = -3.0V, Id = 0 mA (bypass mode), ZO = 50Ω Freq (GHz) S11 Mag. S11 Ang. S21 Mag. S21 Ang. S12 Mag. S12 Ang. S22 Mag. S22 Ang. S21 (dB) Gmax (dB) RLin RLout Isolation (dB) (dB) (dB) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 8 9 10 11 12 13 14 15 16 17 18 0.968 0.961 0.951 0.947 0.937 0.929 0.921 0.913 0.905 0.895 0.887 0.878 0.869 0.862 0.854 0.847 0.839 0.832 0.825 0.819 0.812 0.806 0.8 0.792 0.787 0.76 0.74 0.721 0.708 0.7 0.7 0.699 0.705 0.708 0.705 0.728 0.781 0.815 0.838 0.847 0.85 0.856 0.848 0.844 0.873 -4.5 -8.4 -11.4 -14.8 -18.1 -21.3 -24.5 -27.7 -30.8 -33.7 -36.6 -39.4 -42.1 -44.7 -47.3 -49.8 -52.4 -54.8 -57.1 -59.5 -61.7 -63.9 -66.3 -68.5 -70.9 -81.8 -93.4 -106 -119.8 -134.7 -150.2 -165.1 179.7 165.3 136.3 106.4 75 48.9 28.2 8.5 -10.6 -28.5 -43.4 -53.9 -65.2 0.021 0.039 0.065 0.09 0.114 0.136 0.157 0.176 0.194 0.211 0.226 0.239 0.252 0.264 0.274 0.283 0.293 0.3 0.308 0.314 0.321 0.326 0.331 0.336 0.341 0.359 0.371 0.377 0.379 0.374 0.362 0.347 0.328 0.307 0.262 0.202 0.141 0.083 0.034 0.005 0.037 0.058 0.072 0.083 0.088 41.1 70.5 73.7 70.9 65.7 61.4 57 52.7 48.6 44.5 40.6 36.8 33.2 29.7 26.3 23.1 19.9 16.8 13.8 11 8.1 5.3 2.6 0 -2.7 -15.1 -27.1 -39.1 -51 -63.2 -75.2 -86.7 -98.1 -109.4 -133.2 -157.3 179.6 156.7 134.9 -22.1 -73.5 -94 -112.3 -127.4 -145.2 0.021 0.039 0.064 0.09 0.114 0.136 0.157 0.176 0.194 0.211 0.226 0.239 0.252 0.263 0.274 0.283 0.292 0.3 0.307 0.314 0.32 0.326 0.331 0.336 0.34 0.358 0.37 0.377 0.378 0.374 0.362 0.347 0.328 0.307 0.262 0.201 0.141 0.083 0.034 0.005 0.036 0.057 0.072 0.083 0.088 41.3 70.8 73.9 71 65.9 61.5 57.1 52.8 48.7 44.6 40.6 36.9 33.3 29.8 26.4 23.2 20 16.9 14 11.1 8.2 5.4 2.7 0.1 -2.5 -15 -27 -39 -50.9 -63 -75.1 -86.5 -98 -109.4 -133.1 -157.2 179.8 156.8 135.6 -19.9 -73.5 -94.1 -112.2 -127.3 -144.4 0.936 0.916 0.901 0.89 0.871 0.861 0.846 0.833 0.82 0.806 0.791 0.776 0.762 0.748 0.732 0.719 0.705 0.692 0.679 0.665 0.653 0.639 0.627 0.616 0.603 0.548 0.497 0.452 0.418 0.393 0.376 0.361 0.35 0.336 0.292 0.242 0.247 0.306 0.367 0.414 0.478 0.555 0.626 0.669 0.706 -5.9 -9.5 -13.1 -16.5 -20.2 -23.7 -27.1 -30.3 -33.3 -36.3 -39.2 -41.9 -44.4 -46.9 -49.2 -51.4 -53.5 -55.5 -57.6 -59.4 -61.2 -63 -64.6 -66.3 -67.8 -75.5 -83.4 -91.6 -100.7 -110.7 -121.1 -130.9 -141.7 -152 -173.9 156.3 114.9 80.3 54.2 29.4 4.7 -15.7 -30.1 -44 -58.7 -33.6 -28.2 -23.7 -20.9 -18.9 -17.3 -16.1 -15.1 -14.2 -13.5 -12.9 -12.4 -12.0 -11.6 -11.2 -11.0 -10.7 -10.5 -10.2 -10.1 -9.9 -9.7 -9.6 -9.5 -9.3 -8.9 -8.6 -8.5 -8.4 -8.5 -8.8 -9.2 -9.7 -10.3 -11.6 -13.9 -17.0 -21.6 -29.4 -46.0 -28.6 -24.7 -22.9 -21.6 -21.1 -12.5 -9.1 -6.3 -4.2 -3.6 -2.8 -2.4 -2.2 -2.0 -1.9 -1.9 -2.0 -2.1 -2.1 -2.2 -2.3 -2.4 -2.5 -2.6 -2.7 -2.8 -2.9 -3.0 -3.1 -3.2 -3.6 -3.9 -4.3 -4.6 -4.9 -5.2 -5.7 -6.1 -6.7 -8.3 -10.4 -12.7 -16.5 -23.5 -39.7 -21.9 -17.4 -15.2 -13.6 -11.9 -0.3 -0.3 -0.4 -0.5 -0.6 -0.6 -0.7 -0.8 -0.9 -1.0 -1.0 -1.1 -1.2 -1.3 -1.4 -1.4 -1.5 -1.6 -1.7 -1.7 -1.8 -1.9 -1.9 -2.0 -2.1 -2.4 -2.6 -2.8 -3.0 -3.1 -3.1 -3.1 -3.0 -3.0 -3.0 -2.8 -2.1 -1.8 -1.5 -1.4 -1.4 -1.4 -1.4 -1.5 -1.2 6 -0.6 -0.8 -0.9 -1.0 -1.2 -1.3 -1.5 -1.6 -1.7 -1.9 -2.0 -2.2 -2.4 -2.5 -2.7 -2.9 -3.0 -3.2 -3.4 -3.5 -3.7 -3.9 -4.1 -4.2 -4.4 -5.2 -6.1 -6.9 -7.6 -8.1 -8.5 -8.8 -9.1 -9.5 -10.7 -12.3 -12.1 -10.3 -8.7 -7.7 -6.4 -5.1 -4.1 -3.5 -3.0 -33.6 -28.2 -23.9 -20.9 -18.9 -17.3 -16.1 -15.1 -14.2 -13.5 -12.9 -12.4 -12.0 -11.6 -11.2 -11.0 -10.7 -10.5 -10.3 -10.1 -9.9 -9.7 -9.6 -9.5 -9.4 -8.9 -8.6 -8.5 -8.5 -8.5 -8.8 -9.2 -9.7 -10.3 -11.6 -13.9 -17.0 -21.6 -29.4 -46.0 -28.9 -24.9 -22.9 -21.6 -21.1 MGA-71543 Typical Scattering Parameters and Noise Parameters TC = 25°C, Vds = 2.25 V, Vref = -0.77 V, Id = 3 mA, ZO = 50Ω Freq (GHz) S11 Mag. S11 Ang. S21 Mag. S21 Ang. S12 Mag. S12 Ang. S22 Mag. S22 Ang. S21 (dB) Gmax (dB) RLin RLout Isolation (dB) (dB) (dB) 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2 2.1 2.2 2.3 2.4 2.5 3 3.5 4 4.5 5 6 7 8 9 10 11 12 13 14 15 16 17 18 0.927 0.921 0.915 0.909 0.899 0.891 0.883 0.873 0.863 0.858 0.852 0.846 0.841 0.833 0.828 0.794 0.758 0.717 0.679 0.644 0.594 0.565 0.536 0.545 0.608 0.665 0.707 0.735 0.76 0.788 0.802 0.808 0.845 -10.1 -16.4 -22.7 -28.8 -34.8 -40.5 -46.2 -51.7 -57 -59.7 -62.3 -64.8 -67.5 -70 -72.8 -85.6 -99.1 -113.5 -129 -145.1 -176.1 155 127 99.4 70.4 46.2 27.2 8.7 -9.7 -27.4 -42.4 -53.1 -64.7 2.945 2.939 2.907 2.871 2.826 2.783 2.728 2.693 2.652 2.63 2.609 2.593 2.579 2.554 2.544 2.479 2.43 2.373 2.323 2.252 2.073 1.885 1.715 1.611 1.503 1.332 1.167 1.03 0.904 0.757 0.609 0.5 0.429 170.7 164.1 158.3 152.6 147 141.5 136.3 131.1 126.1 123.7 121.2 118.7 116.3 113.9 111.5 99.7 87.7 75.6 63.1 50.5 26.9 4.6 -16.6 -37 -59.7 -82 -101.9 -121.7 -142.2 -162.1 180 165.7 150.7 0.028 0.032 0.039 0.047 0.054 0.062 0.069 0.076 0.082 0.086 0.089 0.092 0.095 0.098 0.1 0.114 0.125 0.134 0.141 0.144 0.143 0.138 0.126 0.117 0.12 0.12 0.119 0.12 0.122 0.118 0.115 0.113 0.11 23.9 32.9 38.7 41.3 41.5 40.5 38.8 36.7 34.3 33 31.7 30.4 28.9 27.5 26.1 18.5 10.7 2.1 -6.4 -15.4 -31 -45.3 -58.8 -63.7 -71.8 -81.5 -90 -99.8 -110.9 -122.8 -134.2 -144.3 -157.8 0.754 0.744 0.742 0.74 0.736 0.732 0.727 0.721 0.716 0.711 0.707 0.703 0.698 0.695 0.689 0.66 0.626 0.587 0.549 0.511 0.454 0.408 0.344 0.281 0.254 0.274 0.317 0.356 0.421 0.511 0.6 0.653 0.699 -7.9 -12.6 -17.5 -22.1 -26.7 -30.9 -34.9 -38.7 -42.5 -44.2 -46 -47.9 -49.5 -51.3 -52.9 -61.6 -70.5 -80 -90.3 -100.9 -120.8 -140.1 -157.3 -177.8 145.5 106.1 75.4 47.9 20.1 -4.1 -21.1 -36.7 -52.6 9.4 9.4 9.3 9.2 9.0 8.9 8.7 8.6 8.5 8.4 8.3 8.3 8.2 8.1 8.1 7.9 7.7 7.5 7.3 7.1 6.3 5.5 4.7 4.1 3.5 2.5 1.3 0.3 -0.9 -2.4 -4.3 -6.0 -7.4 21.6 21.1 20.6 20.2 19.6 19.1 18.6 18.0 17.5 17.2 17.0 16.7 16.5 16.2 15.9 14.7 13.6 12.5 11.6 10.7 9.2 8.0 6.7 6.0 5.8 5.4 4.8 4.2 3.7 3.1 2.1 1.0 1.0 -0.7 -0.7 -0.8 -0.8 -0.9 -1.0 -1.1 -1.2 -1.3 -1.3 -1.4 -1.5 -1.5 -1.6 -1.6 -2.0 -2.4 -2.9 -3.4 -3.8 -4.5 -5.0 -5.4 -5.3 -4.3 -3.5 -3.0 -2.7 -2.4 -2.1 -1.9 -1.9 -1.5 Freq (GHz) Fmin (dB) GAMMA OPT Mag Ang Rn/50 Ga (dB) 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2 2.1 2.2 2.3 2.4 2.5 3 5 6 0.88 0.87 0.9 0.92 0.95 0.95 0.99 1 1.02 1.03 1.03 1.04 1.04 1.08 1.21 1.36 0.61 0.64 0.65 0.6 0.64 0.63 0.62 0.62 0.61 0.63 0.62 0.6 0.61 0.58 0.49 0.46 0.45 0.43 0.44 0.43 0.42 0.41 0.4 0.4 0.4 0.39 0.38 0.37 0.37 0.33 0.14 0.08 14.8 14.8 14.7 14.2 14.2 14 13.7 13.6 13.4 13.4 13.2 12.9 12.9 12.1 9.6 8.4 7 16.3 22.4 28.4 33.5 37.2 40.2 45.4 47.6 49.2 50.9 53.9 55.4 57.6 67.9 120 151.2 -2.5 -2.6 -2.6 -2.6 -2.7 -2.7 -2.8 -2.8 -2.9 -3.0 -3.0 -3.1 -3.1 -3.2 -3.2 -3.6 -4.1 -4.6 -5.2 -5.8 -6.9 -7.8 -9.3 -11.0 -11.9 -11.2 -10.0 -9.0 -7.5 -5.8 -4.4 -3.7 -3.1 -31.1 -29.9 -28.2 -26.6 -25.4 -24.2 -23.2 -22.4 -21.7 -21.3 -21.0 -20.7 -20.4 -20.2 -20.0 -18.9 -18.1 -17.5 -17.0 -16.8 -16.9 -17.2 -18.0 -18.6 -18.4 -18.4 -18.5 -18.4 -18.3 -18.6 -18.8 -18.9 -19.2 MGA-71543 Typical Scattering Parameters and Noise Parameters TC = 25°C, Vds = 2.3 V, Vref = -0.7 V, Id = 6 mA, ZO = 50Ω Freq (GHz) S11 Mag. S11 Ang. S21 Mag. S21 Ang. S12 Mag. S12 Ang. S22 Mag. S22 Ang. S21 (dB) Gmax (dB) RLin RLout Isolation (dB) (dB) (dB) 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2 2.1 2.2 2.3 2.4 2.5 3 3.5 4 4.5 5 6 7 8 9 10 11 12 13 14 15 16 17 18 0.911 0.904 0.896 0.887 0.875 0.864 0.853 0.84 0.826 0.82 0.812 0.806 0.797 0.787 0.78 0.738 0.695 0.649 0.609 0.573 0.529 0.507 0.485 0.502 0.574 0.639 0.686 0.715 0.741 0.774 0.789 0.797 0.833 -11 -17.7 -24.5 -31.2 -37.5 -43.7 -49.7 -55.6 -61.2 -64 -66.7 -69.4 -72.3 -74.9 -77.8 -91.2 -105.2 -120.2 -136.2 -152.7 175.9 147.2 119.4 92.5 65 42.1 23.9 5.8 -12 -29.2 -43.9 -54.3 -65.8 4.164 4.148 4.094 4.029 3.953 3.877 3.791 3.723 3.649 3.611 3.576 3.55 3.511 3.474 3.446 3.309 3.193 3.072 2.962 2.83 2.555 2.295 2.072 1.922 1.78 1.576 1.388 1.236 1.094 0.926 0.761 0.634 0.549 170.2 163.3 157.1 151.1 145.2 139.5 134 128.7 123.4 121 118.4 115.7 113.3 110.9 108.3 96.3 84.2 72.2 59.9 47.8 25 3.6 -16.8 -36.5 -58.3 -79.6 -98.8 -118.1 -138.4 -158 -175.8 169.4 153.8 0.026 0.03 0.036 0.043 0.05 0.057 0.063 0.069 0.075 0.078 0.081 0.084 0.086 0.089 0.091 0.102 0.112 0.119 0.125 0.128 0.13 0.129 0.123 0.123 0.132 0.134 0.136 0.137 0.137 0.131 0.125 0.121 0.117 23.5 32.6 38.5 41 41.3 40.4 38.8 36.7 34.5 33.3 32.1 30.7 29.4 28.1 26.7 19.7 12.6 4.9 -2.6 -10.4 -23.6 -36 -47.7 -52.7 -63.1 -75 -85.8 -97.7 -110.5 -123.3 -135.2 -145.5 -159 0.667 0.658 0.656 0.654 0.648 0.643 0.638 0.631 0.624 0.619 0.615 0.609 0.604 0.6 0.593 0.561 0.523 0.482 0.443 0.406 0.352 0.308 0.247 0.189 0.174 0.218 0.272 0.318 0.388 0.482 0.57 0.622 0.67 -8.4 -13.4 -18.5 -23.5 -28.2 -32.6 -36.8 -40.7 -44.6 -46.4 -48.2 -50.1 -51.7 -53.5 -55.1 -63.7 -72.6 -82 -92.3 -103 -123 -142.4 -159.2 178.9 132.2 88.5 59.8 34.5 9.3 -11.4 -26.3 -40.6 -55.4 12.4 12.4 12.2 12.1 11.9 11.8 11.6 11.4 11.2 11.2 11.1 11.0 10.9 10.8 10.7 10.4 10.1 9.7 9.4 9.0 8.1 7.2 6.3 5.7 5.0 4.0 2.8 1.8 0.8 -0.7 -2.4 -4.0 -5.2 22.6 22.2 21.7 21.2 20.6 20.0 19.5 18.9 18.4 18.1 17.8 17.6 17.3 16.9 16.7 15.5 14.3 13.3 12.4 11.5 10.1 8.9 7.8 7.1 6.9 6.4 5.9 5.4 4.9 4.4 3.6 2.5 2.5 -0.8 -0.9 -1.0 -1.0 -1.2 -1.3 -1.4 -1.5 -1.7 -1.7 -1.8 -1.9 -2.0 -2.1 -2.2 -2.6 -3.2 -3.8 -4.3 -4.8 -5.5 -5.9 -6.3 -6.0 -4.8 -3.9 -3.3 -2.9 -2.6 -2.2 -2.1 -2.0 -1.6 Freq (GHz) Fmin (dB) GAMMA OPT Mag Ang Rn/50 Ga (dB) 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2 2.1 2.2 2.3 2.4 2.5 3 5 6 0.71 0.74 0.76 0.79 0.81 0.8 0.82 0.83 0.85 0.85 0.87 0.87 0.88 0.9 1.03 1.14 0.56 0.58 0.56 0.54 0.58 0.57 0.57 0.56 0.55 0.58 0.56 0.54 0.55 0.53 0.42 0.38 0.32 0.3 0.31 0.3 0.29 0.29 0.28 0.28 0.28 0.27 0.26 0.26 0.26 0.23 0.11 0.07 16.3 16.3 15.9 15.6 15.6 15.3 15.1 14.9 14.7 14.8 14.5 14.3 14.2 13.5 10.7 9.4 8 15.7 21.8 28.3 33.8 36.5 40 45.2 47.8 49.3 50.7 53.9 55.3 57.7 67.7 120.7 152.7 -3.5 -3.6 -3.7 -3.7 -3.8 -3.8 -3.9 -4.0 -4.1 -4.2 -4.2 -4.3 -4.4 -4.4 -4.5 -5.0 -5.6 -6.3 -7.1 -7.8 -9.1 -10.2 -12.1 -14.5 -15.2 -13.2 -11.3 -10.0 -8.2 -6.3 -4.9 -4.1 -3.5 -31.7 -30.5 -28.9 -27.3 -26.0 -24.9 -24.0 -23.2 -22.5 -22.2 -21.8 -21.5 -21.3 -21.0 -20.8 -19.8 -19.0 -18.5 -18.1 -17.9 -17.7 -17.8 -18.2 -18.2 -17.6 -17.5 -17.3 -17.3 -17.3 -17.7 -18.1 -18.3 -18.6 MGA-71543 Typical Scattering Parameters and Noise Parameters TC = 25°C, Vds = 2.4 V, Vref = -0.6 V, Id = 10 mA, ZO = 50Ω Freq (GHz) S11 Mag. S11 Ang. S21 Mag. S21 Ang. S12 Mag. S12 Ang. S22 Mag. S22 Ang. S21 (dB) Gmax (dB) RLin RLout Isolation (dB) (dB) (dB) 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2 2.1 2.2 2.3 2.4 2.5 3 3.5 4 4.5 5 6 7 8 9 10 11 12 13 14 15 16 17 18 0.9 0.892 0.884 0.873 0.859 0.845 0.832 0.816 0.801 0.793 0.784 0.776 0.767 0.757 0.749 0.701 0.655 0.607 0.567 0.533 0.493 0.476 0.458 0.48 0.558 0.627 0.675 0.706 0.732 0.767 0.783 0.792 0.828 -11.5 -18.6 -25.7 -32.7 -39.4 -45.8 -52 -58.1 -63.9 -66.8 -69.6 -72.4 -75.3 -78 -80.9 -94.7 -108.9 -124.2 -140.4 -157.2 171.3 142.7 115.1 88.8 62.2 39.9 22.1 4.4 -13.3 -30.2 -44.7 -55.1 -66.5 5.023 4.993 4.919 4.83 4.728 4.623 4.509 4.412 4.312 4.259 4.211 4.171 4.117 4.07 4.029 3.829 3.659 3.49 3.335 3.163 2.828 2.526 2.271 2.094 1.935 1.712 1.512 1.351 1.2 1.022 0.849 0.713 0.622 169.8 162.7 156.3 150 143.9 138 132.4 126.9 121.5 119 116.4 113.7 111.2 108.7 106.2 94 81.9 70 58 46.1 23.9 2.9 -17 -36.3 -57.6 -78.3 -97.2 -116.2 -136.2 -155.6 -173.3 171.8 156 0.024 0.029 0.034 0.041 0.047 0.053 0.059 0.065 0.07 0.073 0.075 0.078 0.08 0.083 0.085 0.095 0.103 0.11 0.116 0.12 0.124 0.126 0.124 0.128 0.139 0.142 0.145 0.145 0.145 0.137 0.131 0.126 0.122 23.3 32.4 38.3 40.9 41.3 40.5 39.1 37.2 35 33.9 32.7 31.6 30.3 29 27.7 21.2 14.7 7.6 0.8 -6.3 -18.3 -30.1 -41.4 -47.3 -58.9 -71.7 -83.5 -96.3 -109.7 -123.1 -135.2 -145.7 -159.2 0.608 0.599 0.597 0.595 0.589 0.584 0.578 0.571 0.563 0.558 0.553 0.549 0.543 0.538 0.531 0.499 0.461 0.42 0.382 0.346 0.296 0.255 0.195 0.141 0.14 0.2 0.26 0.308 0.379 0.473 0.558 0.609 0.656 -8.7 -13.8 -19.1 -24.2 -29.1 -33.6 -37.8 -41.8 -45.7 -47.4 -49.2 -51 -52.7 -54.5 -56 -64.4 -73.1 -82.2 -92.6 -103.3 -123.4 -143.1 -159.7 176.8 120.6 76.5 50.1 26.4 3.1 -15.8 -29.5 -43 -57.3 14.0 14.0 13.8 13.7 13.5 13.3 13.1 12.9 12.7 12.6 12.5 12.4 12.3 12.2 12.1 11.7 11.3 10.9 10.5 10.0 9.0 8.0 7.1 6.4 5.7 4.7 3.6 2.6 1.6 0.2 -1.4 -2.9 -4.1 23.2 22.8 22.4 21.8 21.2 20.5 20.0 19.4 18.8 18.5 18.2 18.0 17.7 17.4 17.1 15.8 14.7 13.7 12.8 12.0 10.6 9.5 8.3 7.6 7.4 7.0 6.5 6.0 5.6 5.1 4.3 3.4 3.3 -0.9 -1.0 -1.1 -1.2 -1.3 -1.5 -1.6 -1.8 -1.9 -2.0 -2.1 -2.2 -2.3 -2.4 -2.5 -3.1 -3.7 -4.3 -4.9 -5.5 -6.1 -6.4 -6.8 -6.4 -5.1 -4.1 -3.4 -3.0 -2.7 -2.3 -2.1 -2.0 -1.6 Freq (GHz) Fmin (dB) GAMMA OPT Mag Ang Rn/50 Ga (dB) 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2 2.1 2.2 2.3 2.4 2.5 3 5 6 0.63 0.66 0.68 0.7 0.72 0.72 0.73 0.74 0.76 0.78 0.78 0.79 0.8 0.82 0.94 1.05 0.53 0.54 0.55 0.52 0.55 0.56 0.53 0.53 0.52 0.54 0.53 0.51 0.52 0.5 0.38 0.34 0.27 0.26 0.26 0.25 0.25 0.25 0.24 0.23 0.23 0.23 0.22 0.22 0.22 0.2 0.1 0.07 17.2 17.1 16.9 16.5 16.4 16.2 15.8 15.6 15.4 15.4 15.2 15 14.9 14.2 11.2 10 9 15.3 21.4 28.5 33.8 37 39.9 45.5 48.3 49.6 50.7 54 55.6 57.6 67.5 121.3 155 -4.3 -4.5 -4.5 -4.5 -4.6 -4.7 -4.8 -4.9 -5.0 -5.1 -5.1 -5.2 -5.3 -5.4 -5.5 -6.0 -6.7 -7.5 -8.4 -9.2 -10.6 -11.9 -14.2 -17.0 -17.1 -14.0 -11.7 -10.2 -8.4 -6.5 -5.1 -4.3 -3.7 -32.4 -30.8 -29.4 -27.7 -26.6 -25.5 -24.6 -23.7 -23.1 -22.7 -22.5 -22.2 -21.9 -21.6 -21.4 -20.4 -19.7 -19.2 -18.7 -18.4 -18.1 -18.0 -18.1 -17.9 -17.1 -17.0 -16.8 -16.8 -16.8 -17.3 -17.7 -18.0 -18.3 MGA-71543 Typical Scattering Parameters and Noise Parameters TC = 25°C, Vds = 2.5 V, Vref = -0.5 V, Id = 20 mA, ZO = 50Ω Freq (GHz) S11 Mag. S11 Ang. S21 Mag. S21 Ang. S12 Mag. S12 Ang. S22 Mag. S22 Ang. S21 (dB) Gmax (dB) RLin RLout Isolation (dB) (dB) (dB) 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2 2.1 2.2 2.3 2.4 2.5 3 3.5 4 4.5 5 6 7 8 9 10 11 12 13 14 15 16 17 18 0.889 0.88 0.87 0.858 0.842 0.826 0.81 0.792 0.774 0.765 0.755 0.746 0.736 0.724 0.716 0.664 0.616 0.566 0.528 0.495 0.46 0.448 0.436 0.462 0.544 0.617 0.668 0.7 0.728 0.763 0.78 0.789 0.825 -12.1 -19.5 -27 -34.3 -41.2 -47.9 -54.3 -60.7 -66.6 -69.6 -72.5 -75.4 -78.3 -81 -84 -98 -112.4 -128 -144.5 -161.5 166.9 138.5 111.1 85.4 59.7 38.1 20.6 3.1 -14.4 -31.2 -45.5 -55.8 -67.1 5.952 5.901 5.803 5.684 5.548 5.407 5.26 5.126 4.99 4.922 4.857 4.797 4.729 4.668 4.612 4.34 4.107 3.886 3.686 3.473 3.078 2.737 2.452 2.252 2.075 1.836 1.626 1.457 1.299 1.111 0.93 0.788 0.691 169.3 162 155.3 148.8 142.5 136.5 130.6 125 119.5 116.9 114.3 111.5 109 106.5 103.9 91.7 79.7 67.9 56.1 44.5 22.8 2.4 -17.1 -36 -56.8 -77.2 -95.6 -114.4 -134.1 -153.3 -170.8 174.2 158.3 0.023 0.027 0.032 0.037 0.043 0.049 0.055 0.06 0.065 0.067 0.069 0.072 0.074 0.076 0.078 0.087 0.095 0.102 0.108 0.113 0.119 0.124 0.125 0.133 0.146 0.15 0.153 0.153 0.153 0.144 0.137 0.132 0.126 22.8 32 38.2 40.9 41.5 40.9 39.6 38 36.1 35 34 32.9 31.8 30.6 29.4 23.6 17.8 11.3 5.1 -1.3 -12.5 -24.1 -35.3 -42.2 -54.9 -68.5 -81 -94.4 -108.4 -122.2 -134.6 -145.3 -159 0.541 0.532 0.531 0.528 0.523 0.518 0.511 0.505 0.497 0.493 0.488 0.483 0.477 0.473 0.467 0.435 0.399 0.36 0.324 0.291 0.245 0.208 0.15 0.099 0.114 0.191 0.256 0.305 0.377 0.469 0.552 0.599 0.645 -9 -14.1 -19.6 -24.7 -29.7 -34.2 -38.4 -42.4 -46.2 -47.9 -49.6 -51.5 -53 -54.7 -56.2 -64.1 -72.4 -81.1 -91.4 -102.1 -122.3 -142.5 -158.6 175.9 106.8 65.3 41.5 19.4 -2.4 -19.6 -32.5 -45.4 -59 15.5 15.4 15.3 15.1 14.9 14.7 14.4 14.2 14.0 13.8 13.7 13.6 13.5 13.4 13.3 12.7 12.3 11.8 11.3 10.8 9.8 8.7 7.8 7.1 6.3 5.3 4.2 3.3 2.3 0.9 -0.6 -2.1 -3.2 23.8 23.3 22.9 22.3 21.6 21.0 20.4 19.8 19.2 18.9 18.6 18.3 18.0 17.7 17.5 16.2 15.1 14.1 13.2 12.4 11.1 9.9 8.8 8.1 7.9 7.5 7.1 6.6 6.2 5.8 5.0 4.1 4.1 -1.0 -1.1 -1.2 -1.3 -1.5 -1.7 -1.8 -2.0 -2.2 -2.3 -2.4 -2.5 -2.7 -2.8 -2.9 -3.6 -4.2 -4.9 -5.5 -6.1 -6.7 -7.0 -7.2 -6.7 -5.3 -4.2 -3.5 -3.1 -2.8 -2.3 -2.2 -2.1 -1.7 Freq (GHz) Fmin (dB) GAMMA OPT Mag Ang Rn/50 Ga (dB) 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2 2.1 2.2 2.3 2.4 2.5 3 5 6 0.59 0.64 0.66 0.68 0.68 0.69 0.72 0.73 0.74 0.75 0.76 0.77 0.79 0.82 0.93 1.06 0.52 0.53 0.53 0.51 0.54 0.54 0.51 0.51 0.5 0.51 0.51 0.48 0.5 0.47 0.34 0.31 0.25 0.24 0.24 0.23 0.23 0.23 0.22 0.22 0.21 0.21 0.2 0.2 0.2 0.18 0.09 0.07 18.1 17.9 17.7 17.3 17.2 17 16.5 16.4 16.2 16.1 15.9 15.6 15.6 14.7 11.7 10.5 10 15.7 21.7 28.9 34.2 38.5 40.8 46.4 48.8 50.5 52.4 55.4 56.3 59 68.6 125.1 160.6 -5.3 -5.5 -5.5 -5.5 -5.6 -5.7 -5.8 -5.9 -6.1 -6.1 -6.2 -6.3 -6.4 -6.5 -6.6 -7.2 -8.0 -8.9 -9.8 -10.7 -12.2 -13.6 -16.5 -20.1 -18.9 -14.4 -11.8 -10.3 -8.5 -6.6 -5.2 -4.5 -3.8 -32.8 -31.4 -29.9 -28.6 -27.3 -26.2 -25.2 -24.4 -23.7 -23.5 -23.2 -22.9 -22.6 -22.4 -22.2 -21.2 -20.4 -19.8 -19.3 -18.9 -18.5 -18.1 -18.1 -17.5 -16.7 -16.5 -16.3 -16.3 -16.3 -16.8 -17.3 -17.6 -18.0 MGA-71543 Typical Scattering Parameters and Noise Parameters TC = 25°C, Vds = 2.7 V, Vref = -0.3 V, Id = 40 mA, ZO = 50Ω Freq (GHz) S11 Mag. S11 Ang. S21 Mag. S21 Ang. S12 Mag. S12 Ang. S22 Mag. S22 Ang. S21 (dB) Gmax (dB) RLin RLout Isolation (dB) (dB) (dB) 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2 2.1 2.2 2.3 2.4 2.5 3 3.5 4 4.5 5 6 7 8 9 10 11 12 13 14 15 16 17 18 0.889 0.88 0.87 0.857 0.841 0.823 0.807 0.788 0.769 0.76 0.75 0.739 0.73 0.718 0.709 0.656 0.608 0.559 0.521 0.49 0.457 0.447 0.436 0.462 0.546 0.621 0.672 0.705 0.733 0.768 0.786 0.794 0.83 -12.3 -19.8 -27.4 -34.9 -41.9 -48.7 -55.2 -61.6 -67.6 -70.6 -73.5 -76.3 -79.4 -82.2 -85.2 -99.3 -113.8 -129.5 -146 -163 165.4 137.1 109.8 84.5 59.1 37.8 20.3 2.9 -14.6 -31.3 -45.7 -56.1 -67.4 6.174 6.117 6.012 5.885 5.74 5.589 5.435 5.289 5.145 5.072 5.003 4.93 4.865 4.801 4.739 4.447 4.197 3.963 3.751 3.53 3.124 2.776 2.484 2.28 2.102 1.861 1.649 1.478 1.32 1.129 0.946 0.801 0.703 169.2 161.8 155.1 148.5 142.1 136 130.2 124.5 119 116.3 113.7 111 108.4 105.9 103.3 91 79 67.3 55.6 44.1 22.5 2.2 -17.2 -36 -56.7 -77 -95.4 -114.1 -133.9 -153.1 -170.6 174.5 158.5 0.022 0.025 0.029 0.035 0.04 0.046 0.051 0.055 0.06 0.062 0.064 0.066 0.068 0.07 0.072 0.081 0.089 0.095 0.101 0.106 0.114 0.12 0.122 0.132 0.146 0.152 0.155 0.157 0.157 0.149 0.141 0.136 0.131 22.3 31.6 37.9 40.9 41.7 41.4 40.2 38.7 37 36.1 35.1 34.2 33.1 32 30.9 25.5 20 14 8.2 2 -8.6 -19.8 -30.9 -37.8 -50.8 -64.7 -77.6 -91.3 -105.8 -119.7 -132.5 -143.6 -157.4 0.508 0.501 0.499 0.497 0.493 0.488 0.483 0.477 0.47 0.466 0.462 0.458 0.452 0.448 0.442 0.413 0.38 0.344 0.31 0.278 0.236 0.201 0.146 0.096 0.101 0.177 0.244 0.293 0.366 0.461 0.545 0.595 0.641 -8.9 -13.7 -19.1 -24.2 -29 -33.4 -37.5 -41.3 -45 -46.5 -48.2 -50 -51.4 -53 -54.5 -61.9 -69.7 -77.9 -87.7 -98 -117.5 -137.1 -151.4 -173.8 112 66.8 42.3 19.8 -2.2 -19.1 -32.1 -45.1 -58.8 15.8 15.7 15.6 15.4 15.2 14.9 14.7 14.5 14.2 14.1 14.0 13.9 13.7 13.6 13.5 13.0 12.5 12.0 11.5 11.0 9.9 8.9 7.9 7.2 6.5 5.4 4.3 3.4 2.4 1.1 -0.5 -1.9 -3.1 23.9 23.5 23.0 22.4 21.7 21.0 20.4 19.8 19.2 18.9 18.6 18.3 18.0 17.7 17.5 16.2 15.1 14.1 13.3 12.5 11.2 10.0 8.9 8.2 8.0 7.6 7.2 6.8 6.4 6.0 5.2 4.3 4.3 -1.0 -1.1 -1.2 -1.3 -1.5 -1.7 -1.9 -2.1 -2.3 -2.4 -2.5 -2.6 -2.7 -2.9 -3.0 -3.7 -4.3 -5.1 -5.7 -6.2 -6.8 -7.0 -7.2 -6.7 -5.3 -4.1 -3.5 -3.0 -2.7 -2.3 -2.1 -2.0 -1.6 Freq (GHz) Fmin (dB) GAMMA OPT Mag Ang Rn/50 Ga (dB) 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2 2.1 2.2 2.3 2.4 2.5 3 5 6 0.69 0.73 0.73 0.77 0.77 0.8 0.83 0.85 0.86 0.9 0.91 0.91 0.93 0.98 1.19 1.35 0.56 0.57 0.56 0.54 0.58 0.57 0.55 0.54 0.54 0.54 0.54 0.52 0.52 0.49 0.37 0.35 0.32 0.3 0.31 0.3 0.29 0.29 0.28 0.27 0.27 0.26 0.26 0.25 0.25 0.22 0.1 0.08 18.5 18.3 18 17.6 17.6 17.3 16.9 16.7 16.5 16.4 16.2 16 15.8 15 11.9 10.7 11 17.3 23.9 30.8 36.5 40.7 43.9 49.7 52.1 54.3 55.5 59.3 61 63.2 74.7 136 172.8 -5.9 -6.0 -6.0 -6.1 -6.1 -6.2 -6.3 -6.4 -6.6 -6.6 -6.7 -6.8 -6.9 -7.0 -7.1 -7.7 -8.4 -9.3 -10.2 -11.1 -12.5 -13.9 -16.7 -20.4 -19.9 -15.0 -12.3 -10.7 -8.7 -6.7 -5.3 -4.5 -3.9 -33.2 -32.0 -30.8 -29.1 -28.0 -26.7 -25.8 -25.2 -24.4 -24.2 -23.9 -23.6 -23.3 -23.1 -22.9 -21.8 -21.0 -20.4 -19.9 -19.5 -18.9 -18.4 -18.3 -17.6 -16.7 -16.4 -16.2 -16.1 -16.1 -16.5 -17.0 -17.3 -17.7 Part Number Ordering Information No. of Devices Container MGA-71543-TR1 MGA-71543-TR2 3000 10000 7" Reel 13" Reel MGA-71543-BLK MGA-71543-TR1G 100 3000 antistatic bag 7" Reel MGA-71543-TR2G MGA-71543-BLKG 10000 100 13" Reel antistatic bag Part Number Note: For lead-free option, the part number will have the character “G” at the end. Package Dimensions Outline 43 SOT-343 (SC70 4-lead) 1.30 (.051) BSC HE E 1.15 (.045) BSC b1 D A A2 A1 b L C DIMENSIONS (mm) SYMBOL E D HE A A2 A1 b b1 c L 12 MIN. 1.15 1.85 1.80 0.80 0.80 0.00 0.25 0.55 0.10 0.10 MAX. 1.35 2.25 2.40 1.10 1.00 0.10 0.40 0.70 0.20 0.46 NOTES: 1. All dimensions are in mm. 2. Dimensions are inclusive of plating. 3. Dimensions are exclusive of mold flash & metal burr. 4. All specifications comply to EIAJ SC70. 5. Die is facing up for mold and facing down for trim/form, ie: reverse trim/form. 6. Package surface to be mirror finish. Device Orientation REEL TOP VIEW END VIEW 4 mm CARRIER TAPE 8 mm 71 USER FEED DIRECTION 71 71 71 COVER TAPE Tape Dimensions For Outline 4T P P2 D P0 E F W C D1 t1 (CARRIER TAPE THICKNESS) Tt (COVER TAPE THICKNESS) K0 10° MAX. A0 DESCRIPTION 13 10° MAX. B0 SYMBOL SIZE (mm) SIZE (INCHES) CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER A0 B0 K0 P D1 2.40 ± 0.10 2.40 ± 0.10 1.20 ± 0.10 4.00 ± 0.10 1.00 + 0.25 0.094 ± 0.004 0.094 ± 0.004 0.047 ± 0.004 0.157 ± 0.004 0.039 + 0.010 PERFORATION DIAMETER PITCH POSITION D P0 E 1.55 ± 0.10 4.00 ± 0.10 1.75 ± 0.10 0.061 + 0.002 0.157 ± 0.004 0.069 ± 0.004 CARRIER TAPE WIDTH THICKNESS W t1 8.00 + 0.30 - 0.10 0.254 ± 0.02 0.315 + 0.012 0.0100 ± 0.0008 COVER TAPE WIDTH TAPE THICKNESS C Tt 5.40 ± 0.10 0.062 ± 0.001 0.205 + 0.004 0.0025 ± 0.0004 DISTANCE CAVITY TO PERFORATION (WIDTH DIRECTION) F 3.50 ± 0.05 0.138 ± 0.002 CAVITY TO PERFORATION (LENGTH DIRECTION) P2 2.00 ± 0.05 0.079 ± 0.002 Designing with MGA-71543, a Low Noise Amplifier with Built-in Mitigated Bypass Switches Introduction The MGA-71543 is a single stage GaAs RFIC low noise amplifier with an integrated bypass switch (Figure 1). RF IN The MGA-71543 is a small LNA/ Bypass Switch MMIC that provides a low noise figure, a high gain and high third order input intercept point (IIP3) ideal for the first stage LNA of PCS CDMA and W-CDMA. Device Description The MGA-71543 is a single stage GaAs IC with a built-in bypass switch housed in a SOT-343 package. The device diagram is shown in Figures 1 and 2. RF OUT Bypass Mode RF in The MGA-71543 offers an integrated solution of LNA with adjustable IIP3. The IIP3 can be fixed to a desired current level for the receiver’s linearity requirements. The LNA has a bypass switch function, which sets the current to zero (2 µA) and provides low insertion loss when in bypass mode. The bypass mode also boosts dynamic range when high level signal is being received. Amplifier Mode Switch & Bias Figure 1. MGA-71543 Functional Diagram. RF out ing the same matching network at both states (LNA State and Bypass State). This makes the MGA-71543 ideal for use between duplexers and image reject filters. Many CDMA systems operate 20% LNA and 80% bypass mode. For example, with the bypass draw of zero and LNA of 10 mA, the MGA-71543 allows an average of only 2 mA current. Figure 2. Simplified Schematic. This application note describes a low noise amplifier design using Agilent Technologies’ MGA-71543. + – + – Control The MGA-71543 is designed for receivers and transmitters operating from 100 MHz to 6 GHz, mainly for CDMA applications i.e. IS-95 CDMA1900, CDMA800 and W-CDMA. It can be used as a first stage (Q1) in a CDMA PCS 1900 MHz application currently filled by a single transistor. Its bypass capability adds features over the single transistor solution with no performance loss. The device can also be used as a driver amplifier for CDMA800. The purpose of the switch feature is to prevent distortion of high signal levels in receiver applications by bypassing the amplifier. Furthermore, zero current draw, when in bypass mode, saves current thus improving battery life. The internally matched switching circuit provides a 20 dB gain step and also reduces gain ripple and mismatch in system usage. 14 Input & DCref Output & Vd Gain FET GND GND & Vc Figure 3. Bypass State Duplicates the In and Out Impedance. The MGA-71543 features a minimum noise figure of 0.8 dB and 16 dB available gain. The input and output are partially matched, and only a simple series/shunt inductor match is required to achieve low noise figure and VSWR into 50Ω. When set into the bypass mode, both input and output are internally matched through a mitigative circuit. This circuit draws no current (less than 2 µA), yet duplicates the in and out impedance of the LNA (Figure 3). This allows the system user to have minimum mismatch change from LNA to Bypass mode, thus allow- The MGA-71543 is a GaAs MMIC, processed on Agilent’s cost effective PHEMT (Pseudomorphic High Electron Mobility Transistor Technology). It is housed in the SOT343 (SC70 4-lead) package. Biasing This IC can be biased like a depletion mode discrete GaAsFET. Two kinds of passive biasing can be used: gate bias (Figure 4) and source resistor bias method (Figure 6). Gate Bias Pins 1 and 4 (Figure 4) are DC grounded and a negative bias voltage is applied to Pin 3 in addition to the power supply (2.7 or 3 V) applied to Pin 2. This method of biasing has the advantage of minimizing parasitic source inductance because the device is directly DC and RF grounded. 3 Input 1 71 4 Vref 2 Output & Vd Figure 4. Gate Bias Method. The DC supply at the input terminal (Vref) can be applied through a RF choke (inductor). The voltage at Vref (Pin 3) with respect to ground determines the device current, Id. A plot of typical Id vs. Vref is shown in Figure 5. Maximum device current (approximately 60 mA) occurs at Vref = 0 (i.e. Vgs= 0). When using the gate biasing method, the bypass mode is activated when Vds = 0V and Vref < -2V. The current of the amplifier (Id) is set by the value of the resistor Rbias. This resistor (Rbias) is connected at Pin 4 as shown in Figure 6 and RF bypassed. At least two capacitors in parallel are recommended for RF bypassing. One capacitor (100 pF) for high frequency bypassing and a second, large value capacitor for better low frequency bypassing. The large value capacitor is added in parallel to improve the IP3 because they help ground the low frequency mixing terms that are generated during a two tones test (i.e. f1 – f2 term which is the separation of the two tones usually 1 to a few MHz) and thus improve the IIP3. 3 Input 1 71 4 70 60 Output & Vd 2 Rbias Id (mA) 50 40 Figure 6. Source Resistor Bias Method. 30 Maximum current (about 60 mA) occurs when Rbias= 0. 20 10 0 -1 -0.8 -0.6 -0.4 -0.2 Vref (V) 60 50 40 Id (mA) This kind of biasing would not usually be used unless a negative supply voltage was readily available. where Rbias is in ohms and Id is the desired device current in mA. A simple method for DC grounding the input terminal (Pin 3) is to use a shunt inductor that is also part of the noise-matching network. Adaptive Biasing For applications in which input power levels vary over a wide range, it may be useful to dynamically adapt the bias of the MGA-71543 to match the signal level. A sensor senses the signal level at some point in the system (usually in the baseband circuitry) and automatically adjusts the bias current of the amplifier accordingly. The main advantage of adaptive biasing is conservation of supply current (longer battery life) by using only the amount of current necessary to handle the input signal without distortion. 30 3 20 Source Resistor Bias This is the recommended method because it only requires one (positive) power supply. As shown in Figure 6, Pin 3 is DC grounded and pins 1 and 4 are RF bypassed. Rbias = 964 (1 – 0.112 √ Id) Id Adaptive biasing of the MGA-71543 can be accomplished by simple digital means (Figure 8). For instance simple electronic switches can be used to control the value of the source resistor in discrete increment. A plot of typical Id vs. Rbias is shown in Figure 7. Figure 5. Device Current vs. Vref. The approximate value of the external resistor, Rbias, may also be calculated from: DC Return Path 10 2 1 4 0 0 20 40 60 80 100 120 140 Rbias (Ω) Figure 7. Device Current vs. Rbias. Digital Control Figure 8. Adaptive Bias Control using Digital Method. 15 Applying the Device Voltage Common to all methods of biasing, voltage Vd is applied to the MGA-71543 through the RF output connection (Pin 2). The bias line is capacitively bypassed to keep RF from the DC supply lines and prevent resonant dips or peaks in the response of the amplifier. Where practical, it may be cost effective to use a length of high impedance transmission line (usually λ /4 line) in place of the RFC. When using the gate bias method, the applied device voltage, Vds, is equal to voltage Vd (at pin 2) since Vs is zero. Vd ~ +2.5 V RF Input RF Output 2 1 71 3 4 Vref = -0.5 V Controlling the Switch The device current controls the state of the MGA-71543 (amplifier or bypass mode). For device currents greater than 3 mA, it functions as an amplifier. If a lower current is drawn, the gain of the amplifier is significantly reduced and the performance will degrade. If the device current is set to zero, the MGA-71543 is switched into a bypass mode in which the signal is routed around the amplifier with a loss of about 5.6 dB. The simplest way of switching the MGA-71543 to the bypass mode is to open-circuit the terminals at Pins 1 and 4. The bypass mode is also set by increasing the source resistance Rbias to greater than 1 MΩ. With the DC ground connection open, the internal control circuit of the MGA-71543 autoswitches from amplifier mode into a bypass mode and the device current drops to near zero. Typical bypass mode current is 2 µA. Figure 9. DC Schematic for Gate Bias. 3 For source resistor biasing method, the applied device voltage, Vds, is Vd – Vs. The bias control voltage is Vs (Pin 4) which is set by the external bias resistor. A source resistor bias circuit is shown in Figure 10. Vd = +3 V 2 1 RF Input RF Output 71 3 1 4 Rbias Bypass Switch Enable Figure 11. MGA-71543 Amplifier/Bypass State Switching. A digital switch can be used to control the amplifier and Bypass State as shown in Figure 11. 4 Rbias Figure 10. DC Schematic for Source Bias. 16 2 Switching Speed The speed at which the MGA-71543 switches between states is extremely fast. The intrinsic switching speed is typically around 10 ns. However in practical circuits, the switching speed is limited by the time constants of the external bias circuit components (current setting resistor and bypass capacitors). These external components increase the switching time to around 100ns. Furthermore, the switching ON time is slightly lower (faster) than the switching OFF time (i.e. It switches on faster). Thermal issues The Mean Time To Failure (MTTF) of semiconductors is inversely proportional to the operating temperature. When biased at 3V and 10 mA for LNA applications, the power dissipation is 3V x 10 mA = 30 mW. The temperature increment from the RFIC channel to its case is then 30 mW x θ jc = 0.030 watt x 240°C/watt = 7.2°C. Subtracting the channel-to-case temperature rise from the suggested maximum junction temperature of 150°C, the resulting maximum allowable case temperature is 143°C. The worst case thermal situation occurs when the MGA-71543 is operated at its maximum operating conditions in an effort to maximize output power or achieve minimum distortion. A similar calculation for the maximum operating bias of 4.2 volts and 50 mA yields a maximum allowable case temperature of 100°C. (i.e. 210 mW x θ jc = 0.210 watt x 240°C/watt = 50.4°C 150°C – 50.4°C = 100°C.) This calculation assumes the worst case of no RF power being extracted from the device. When operated in a saturated mode, both power-added efficiency and the maximum allowable case temperature will increase. Note: “Case” temperature for surface mount packages such as the SOT-343 refers to the interface between the package pins and the mounting surface, i.e., the temperature at the PCB mounting pads. The primary heat path from the RFIC chip to the system heatsink is by means of conduction through the package leads and ground vias to the ground plane of the PCB. Grounding Consideration in PCB Layout The MGA-71543 requires careful attention during grounding. Any device with gain can be made to oscillate if feedback is added. Since poor grounding adds series feedback, it can cause the device to oscillate. Poor grounding is one of the most common causes of oscillation in RF components. Careful attention should be used when RF bypassing the ground terminals when the device is biased using the source resistor method. Package Footprint The PCB pad print for the miniature, 4-lead SOT-343 (SC70) package is shown in Figure 12. 1.30 0.051 1.00 0.039 2.00 0.079 0.60 0.024 .090 0.035 1.15 0.045 Dimensions in inches mm Figure 12. Recommended PCB Pad Layout for Agilent’s SC70 4L/SOT-343 Products. The layout is shown with a footprint of the MGA-71543 superimposed on the PCB pads for reference. 17 RF bypass For layouts using the source resistor method of biasing, both of the ground terminals of the MGA-71543 must be well bypassed to maintain device stability. Beginning with the package pad print in Figure 12, and RF layout similar to the one shown in Figure 13 is a good starting point for using the MGA-71543 with capacitor-bypassed ground terminals. It is a best practice to use multiple vias to minimize overall ground path inductance. Size 0402 recommended for the bypass capacitors 71 LNA Application In the following sections the LNA design is described in a more general way. Sample evaluation boards for 1900 MHz and 800 MHz are shown in a table (Table 1) and the appropriate board diagram is shown (Figures 22 and 23). A second smaller size board is also shown (Figures 25 and 26) with the corresponding table (Table 2). The smaller board is an example of reducing the size of the layout, more suitable for handset manufacturers. For low noise amplifier application, the LNA is typically biased 6 to 20 mA. The MGA-71543 is a conditionally stable device, therefore, the proper input and output loads must be presented in addition to properly RF grounding the device. Please refer to the stability section for tips on preventing oscillation. The LNA can be switched ON or OFF by a simply varying the resistor to its ground leads as described in previous sections. Figure 13. Layout for RF Bypass. PCB Materials 0.031 inches thick of FR-4 or G-10 type dielectric materials are typical choices for most low cost wireless applications using single layer printed boards. As an alternative, a Getek material with a multilayer printed circuit board can be used for a smaller size board, where: 1st layer: RF routing layer 2nd layer: Ground layer 3rd layer: Power (DC) routing layer 4th layer: Other RF routing layer The spacing between the layers is as follows: Between the 1st and 2nd: 0.005" Between the 2nd and 3rd: 0.020" Between the 3rd and 4th: 0.005" Matching Networks for the LNA Γin Input Match ΓL Output Match LNA 50Ω 50Ω Γs or Γopt Γopt Figure 14. Input and Output Matching Terminology. The input matching network determines the noise figure and return loss (S11) of our amplifier. The output-matching network determines the IP3 and output return loss (S22). Furthermore, both input and output matching networks influence the gain. The best gain (Maximum Available Gain-MAG) and lowest input return loss is obtained when both the input and output are conju- gately matched to 50Ω. For instance at the input, when Γ s = Γin* the highest gain with the best power transfer is obtained where Γs is the source reflection coefficient presented to the input pin. For best noise, Γs = Γ OPT, where ΓOPT is the source reflection coefficient for optimum NF match and is determined empirically (experimentally). However, an input match where Γs = ΓOPT does not necessarily yield the best return loss nor the best gain. Input Match To allow flexibility for the designer, the LNA is intended to be used with external matching network at the input. The noise performance of a two port can be determined if the values of the noise parameters Fmin, rn = Rn /50 and ΓOPT are known (shown in the datasheet), where these parameters are given by: F50 = Fmin + 4rn|Γs – ΓOPT| 2 (1 – |Γs| 2 ) |1 + ΓOPT| 2 2 rn = (F50 – Fmin) |1 + ΓOPT| 4|ΓOPT| 2 ΓOPT = ZOPT – ZO ZOPT + ZO Where Fmin is the minimum noise figure that is obtained when Γs = ΓOPT . Rn is the noise resistance that indicates the sensitivity of the noise performance. Γs is the source reflection coefficient presented to the input pin. ΓOPT is the source reflection coefficient for optimum NF match. Any change in Γs affects the noise figure of our amplifier. To obtain the best noise figure, the following relation: Γs = ΓOPT must be 18 satisfied. However, this might affect our return loss at the input because it creates more mismatch (at the input) and there is less power transfer to the LNA. Therefore the best solution should be the one that gives a reasonable input return loss with the best noise figure associated to it. The noise figure F of an amplifier is determined by the input matching circuit. The output matching does not affect the noise (has a significantly minimal effect on noise figure). To obtain the best noise match a simple two elements match is used at the input of the device. Using the ΓOPT magnitude and phase at the frequency of interest, the noise match is done. The topology that has a capacitor to ground is ignored because it does not allow the input to be DC grounded as is required by the source bias method. Therefore the series-L-shunt-L topology is used. The final values of the noise matching circuit (input match) was a result of some more empirical tuning in the lab that was a compromise between the various important parameters. Typical Gain, noise and stability circles are shown in Figures 17 – 20. Most simulations were done using Agilent-EEsof’s Advanced Design System (ADS). Stability A stable circuit is a circuit that does not oscillate. Oscillation can take the form of spurious signal and noise generation. This usually results in changes in DC operating point (bias level fluctuates). The oscillations can be triggered by changes in the source (input match), load (output match), bias level and last but not least: improper grounding. Design for Stability The main potential for oscillation with the MGA-71543 is improper grounding and/or improper RF bypass capacitors. Any device with gain can be made to oscillate if feedback is added. Proper grounding may be achieved by minimizing inductance paths to the ground plane. Passive components should be chosen for high frequency operation. Bias circuit self resonance due to inadequate bypass capacitors or inadequate grounding may cause high frequency, out of band, instability. Smaller 0402 size bypass capacitors are recommended to minimize parasitic inductance and resonance of the bias circuit. Statistical Parameters Several categories of parameters appear within the electrical specification portion of the MGA-71543 datasheet. Parameters may be described with values that are either “minimum or maximum”, “typical” or “standard deviations”. The values for parameters are based on comprehensive product characterization data, in which automated measurements are made on a statistically significant number of parts taken from nonconsecutive process lots of semiconductor wafers. The data derived from product characterization tends to be normally distributed, e.g. fits the standard bell curve. 68% 95% 99% -3σ -2σ -1σ Mean (µ) +1σ +2σ (typical) Parameter Value Figure 15. Normal Distribution Curve. +3σ Parameters considered to be the most important to system performance are bounded by minimum or maximum values. For the MGA-71543, these parameters are: Vref test, NFtest, Gatest, IIP3 test, and ILtest. Each of the guaranteed parameters is 100% tested as part of the normal manufacturing and test process. Standard statistics tables or calculations provide the probability of a parameter falling between any two values, usually symmetrically located about the mean. Referring to Figure 15 for example, the probability of a parameter being between ±1σ is 68.3%; between ±2σ is 95.4%; and between ±3σ is 99.7%. Values for most of the parameters in the table of Electrical Specifications that are described by typical data are the mathematical mean (µ), of the normal distribution taken from the characterization data. For parameters where measurements or mathematical averaging may not be practical, such as S-parameters or Noise parameters and the performance curves, the data represents a nominal part taken from the center of the characterization distribution. Typical values are intended to be used as a basis for electrical design. Phase Reference Planes The positions of the reference plane used to specify S-parameters and Noise Parameters for the MGA-71543 are shown in Figure 16. As seen in the illustration, the reference planes are located at the point where the package leads contact the test circuit. To assist designers in optimizing not only the immediate amplifier circuit using the MGA-71543, but to also evaluate and optimize tradeoffs that affect a complete wireless system, the standard deviation (σ) is provided for many of the Electrical Specification parameters (at 25°C). The standard deviation is a measure of the variability about the mean. It will be recalled that a normal distribution is completely described by the mean and standard deviation. 19 Reference Planes Electronic devices may be subjected to ESD damage in any of the following areas: Storage & handling Inspection Assembly & testing In-circuit use The MGA-71543 is an ESD Class 1 device. Therefore, proper ESD precautions are recommended when handling, inspecting, testing, assembling, and using these devices to avoid damage. Any user-accessible points in wireless equipment (e.g., antenna or battery terminals) provide an opportunity for ESD damage. For circuit applications in which the MGA-71543 is used as an input or output stage with close coupling to an external antenna, the RFIC should be protected from high voltage spikes due to human contact with the antenna. Test Circuit Figure 16. Phase Reference Planes. Electrostatic Sensitivity RFICs are electrostatic discharge (ESD) sensitive devices. Although the MGA-71543 is robust in design, permanent damage may occur to these devices if they are subjected to high-energy electrostatic discharges. Electrostatic charges as high as several thousand volts (which readily accumulate on the human body and on test equipment) can discharge without detection and may result in failure or degradation in performance and reliability. Figure 17. In-circuit ESD Protection. A best practice, illustrated in Figure17, is to place a shunt inductor (RFC) at the antenna connection to protect the receiver and transmitter circuits. It is often advantageous to integrate the RFIC into a diplexer or T/R switch control circuitry. Demonstration Board Source unstable Source stability circle Source stable G = 18.8 dB Load stability circle Load unstable region G = 17.8 dB Gain Circles G = 16.8 dB NF = 0.75 dB Load stable region G = 15.8 dB Noise Circles G = 14.8 dB NF = 0.95 dB NF = 1.15 dB NF = 1.35 dB NF = 1.55 dB Figure 18. Gain, Noise and Stability Circles. Figure 19. Noise Circles F = 1900 MHz, Step Size: 0.2 dB. Vd +3.0V C11 Figure 20. Gain Circle F = 1900 MHz, Step Size: 1.0 dB. C10 L3 C9 R4 C4 C5 1 2 71 RF Input L1 C1 4 3 C8 C6 C7 L2 C2 R1 SW1 R3 SW2 R2 Figure 22. Schematic Diagram of Evaluation Board Amplifier. 20 RF Output Figure 21. Load and Source Stability Circles. Agilent MGA-71543 Eval Circuit Vd GND C11 C10 C4 IN C1 C5 R4 L2 OUT C9 C6 L1 L3 C7 C2 R3 C8 R2 R1 Vc EB 7/00 REV 2 Figure 23. Amplifier Evaluation Circuit with Component Designators. Actual board size is 1.1 x 1.3 inches, 0.031 inches thick. Board Designation Description PCS-1900 800 MHz Part Number Package 71 DUT[1] DUT[1] MGA-71543 SOT-343 (4 lead SC-70 package) C1 100 pF 8.2 pF Size 0402 C2, C5, C6, C7, C10 100 pF 100 pF Size 0402 C9 47 pF 2.7 pF Size 0402 C4, C8, C11 0.01 µF 0.01 µF Size 0603 or 0402 L1 1.5 nH 18 nH TOKO LL1005 Size 0402 L2 2.7 nH 33 nH TOKO LL1005 Size 0402 L3 3.9 nH 33 nH TOKO LL1005 Size 0402 R1 51Ω 51Ω Size 0402 R2 115Ω 115Ω Size 0805 (for 6mA Bias) R4 / L4 0Ω (1900) 18 nH R3 60Ω 60Ω Note 1: Device under Test Table 1. Component Values for 1900 MHz and 800 MHz. 21 — / LL1608-FH or 1005-FH Size 0805 (Jumper) / Size 0603 (inductor) Size 0805 (for 10mA Bias) Digital Base-band Processor Analog Front-end MGA-71543 Demodulator ADC ADC Dual Synthesizer Dual VCO DAC DAC RF Control Signal (PDM ) Figure 24. System Level Overview of MGA-71543 for Handset Designers. PCS_OUT These are the actual necessary components. The other connectors and board space are only for production. blue2_lna rev2.1 RF3 U4 C38 C44 L7 C9 R37 U2 R38 C47 C37 R24 33.1 mm 1.303 in L6 R24 R25 R21 C8 GND Cell_LNA R20 PCS_IN C44 C37 R25 R21 C8 L5 L7 R38 C12 C36 C47 PCS_LNA C9 R37 L5 U2 L25 C12 PCS_LNA C38 L6 PCS_IN RF1 L25 C36 R20 GND R16 R17 PCS_LNA 20.1 mm 0.791 in PCS_LNA AGILENT TECHNOLOGIES Cell_LNA R18 J7 R28 J8 GND Vcc J9 Vcc U4 J10 Software controlling the switch Figure 25. Small Size Amplifier Board with Components for Handset Focussed Designers. 22 Manual switch control 4 layer Board Designation Description PCS-1900 Part Number Package U2 or 71 DUT[1] MGA-71543 SOT-343 (SC-70) U4 or O3 Switch b/n Gnd resistors FDG6303N Dual N-channel, Digital FET C12 2.2 pF Size 0402 C8, C47 0.033 µF Size 0402 C9, C44 100 pF Size 0402 C38 Not used C36, C37 27 pF L5 3.9 nH TOKO LL1005 Size 0402 L6 4.7 nH TOKO LL1005 Size 0402 L7 1.5 nH TOKO LL1005 Size 0402 L25 Not used For tuning/Not used here R38 51Ω Size 0402 R20 36Ω Size 0402 (for 16 mA Bias) R21 56Ω Size 0402 (for 11 mA Bias) R24, R25 6Ω Size 0402 R16, R17 0Ω Size 0402 (Jumper) R37 0Ω Size 0402 (Jumper) R18, R28 Not used Used with other FET switches Size 0402 Note 1: Device under Test Table 2. Component Values for 1900 MHz Amplifier on Smaller Board. References 1. Application note RLM020199, “Designing with the MGA-72543 RFIC Amplifier/Bypass Switch”. 2. G.D.Vendelin, A.M.Pavio and U.L.Rhode, “Microwave Circuit Design Using Linear and Nonlinear Techniques”. 23 PCS_OUT MGA-71543 blue2_lna rev2.1 L25 L5 C47 C44 C37 R25 R21 U4 J8 J7 6 or 3 2 or 5 5 or 2 3 or 6 4 or 1* G2 AGILENT TECHNOLOGIES S2 03 Vcc GND J9 1 or 4* GND Cell_LNA R20 Switch & Bias Control R24 Vcc C8 J10 RF OUT R37 PCS_LNA L6 C9 U2 L7 R38 PCS_LNA PCS_IN C38 RF IN C12 C36 D1 D2 SC70-6 S1 G1 U4 = FDG6303N Dual N-channel, Digital FET MGA-71543 IN C36 L7 C9 L6 Not used in this case. These could be used with other digital FET to select more discrete current values. R38 OUT C12 L5 R38 C37 C47 C44 C8 R25 R20 R24 R21 1 or 4* R28 (0Ω Jumper) R18 (0Ω Jumper) 6 or 3 2 or 5 5 or 2 3 or 6 4 or 1* R16 (0Ω Jumper) FDG6303N R17 (0Ω Jumper) Selects current set by R21 Figure 26. LNA Bypass Circuit Control on Small Test Board. For product information and a complete list of Agilent contacts and distributors, please go to our web site. www.agilent.com/semiconductors E-mail: [email protected] Data subject to change. Copyright © 2004 Agilent Technologies, Inc. Obsoletes 5988-4553EN November 22, 2004 5989-1807EN Selects current set by R20 Vd = 3 Volt