IC41C82002 IC41LV82002 2M x 8 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE FEATURES DESCRIPTION Extended Data-Out (EDO) Page Mode access cycle TTL compatible inputs and outputs Refresh Interval: -- 2,048 cycles/32 ms The 1+51 82002 Series is a 2,097,152 x 8-bit high-performance CMOS Dynamic Random Access Memory. The EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 8-bit word. Refresh Mode: 4)5-Only, +)5-before-4)5 (CBR), and Hidden JEDEC standard pinout Single power supply: 5V±10% or 3.3V ± 10% Byte Write and Byte Read operation via +)5 PRODUCT SERIES OVERVIEW Part No. Refresh Voltage IC41C82002 2K 5V ± 10% IC41LV82002 2K 3.3V ± 10% PIN CONFIGURATION 28 Pin SOJ, TSOP-2 These features make the 82002 Series ideally suited for highbandwidth graphics, digital signal processing, high-performance computing systems, and peripheral applications. The 82002 Series is packaged in a 28-pin 300mil SOJ and a 28 pin TSOP-2 KEY TIMING PARAMETERS Parameter -50 -60 Unit RAS Access Time (tRAC) 50 60 ns CAS Access Time (tCAC) 13 15 ns Column Address Access Time (tAA) 25 30 ns EDO Page Mode Cycle Time (tPC) 20 25 ns Read/Write Cycle Time (tRC) 84 104 ns PIN DESCRIPTIONS VCC 1 28 GND I/O0 2 27 I/O7 I/O1 3 26 I/O2 4 I/O3 5 WE A0-A10 Address Inputs I/O6 I/O0-7 Data Inputs/Outputs 25 I/O5 WE Write Enable 24 I/O4 OE Output Enable 6 23 CAS RAS 7 22 OE RAS Row Address Strobe NC 8 21 A9 CAS Column Address Strobe A10 9 20 A8 Vcc Power A0 10 19 A7 GND Ground A1 11 18 A6 A2 12 17 A5 NC No Connection A3 13 16 A4 VCC 14 15 GND ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc. Integrated Circuit Solution Inc. DR017-0A 06/22/2001 1 IC41C82002 IC41LV82002 FUNCTIONAL BLOCK DIAGRAM OE WE CAS CAS CONTROL LOGIC WE CONTROL LOGICS CAS WE OE CONTROL LOGIC OE DATA I/O BUS COLUMN DECODERS SENSE AMPLIFIERS ROW DECODER REFRESH COUNTER ADDRESS BUFFERS A0-A10 MEMORY ARRAY 2,097,152 x 8 DATA I/O BUFFERS RAS CLOCK GENERATOR RAS RAS I/O0-I/O7 TRUTH TABLE Function Standby Read Write: Word (Early Write) Read-Write Hidden Refresh RAS-Only Refresh CBR Refresh Read Write(1) RAS H L L L L→H→L L→H→L L H→L CAS H L L L L L H L WE X H L H→L H L X X OE X L X L→H L X X X Address tR /tC I/O X High-Z ROW/COL DOUT ROW/COL DIN ROW/COL DOUT, DIN ROW/COL DOUT ROW/COL DOUT ROW/NA High-Z X High-Z Note: 1. EARLY WRITE only. 2 Integrated Circuit Solution Inc. DR017-0A 06/22/2001 IC41C82002 IC41LV82002 Functional Description Refresh Cycle The IC41C82002 and IC41LV82002 are CMOS DRAMs optimized for high-speed bandwidth, low power applications. During READ or WRITE cycles, each bit is uniquely addressed through the 11 address bits. These are entered 11 bits (A0-A10) at a time for the 2K refresh device. The row address is latched by the Row Address Strobe (RAS). The column address is latched by the Column Address Strobe (CAS). RAS is used to latch the first nine bits and CAS is used the latter ten bits. To retain data, 2,048 refresh cycles are required in each 32 ms period. There are two ways to refresh the memory: 1. By clocking each of the 2,048 row addresses (A0 through A10) with RAS at least once every 32 ms. Any read, write, read-modify-write or RAS-only cycle refreshes the addressed row. Memory Cycle A memory cycle is initiated by bring RAS LOW and it is terminated by returning both RAS and CAS HIGH. To ensures proper device operation and data integrity any memory cycle, once initiated, must not be ended or aborted before the minimum tRAS time has expired. A new cycle must not be initiated until the minimum precharge time tRP, tCP has elapsed. Read Cycle A read cycle is initiated by the falling edge of CAS or OE, whichever occurs last, while holding WE HIGH. The column address must be held for a minimum time specified by tAR. Data Out becomes valid only when tRAC, tAA, tCAC and tOEA are all satisfied. As a result, the access time is dependent on the timing relationships between these parameters. 2. Using a CAS-before-RAS refresh cycle. CAS-beforeRAS refresh is activated by the falling edge of RAS, while holding CAS LOW. In CAS-before-RAS refresh cycle, an internal 11-bit counter provides the row addresses and the external address inputs are ignored. CAS-before-RAS is a refresh-only mode and no data access or device selection is allowed. Thus, the output remains in the High-Z state during the cycle. Power-On After application of the VCC supply, an initial pause of 200 µs is required followed by a minimum of eight initialization cycles (any combination of cycles containing a RAS signal). During power-on, it is recommended that RAS track with VCC or be held at a valid VIH to avoid current surges. Write Cycle A write cycle is initiated by the falling edge of CAS and WE, whichever occurs last. The input data must be valid at or before the falling edge of CAS or WE, whichever occurs last. Integrated Circuit Solution Inc. DR017-0A 06/22/2001 3 IC41C82002 IC41LV82002 ABSOLUTE MAXIMUM RATINGS(1) Symbol Parameters VT Voltage on Any Pin Relative to GND VCC Supply Voltage IOUT PD TA TSTG Output Current Power Dissipation Commercial Operation Temperature Storage Temperature 5V 3.3V 5V 3.3V Rating Unit 1.0 to +7.0 0.5 to +4.6 1.0 to +7.0 0.5 to +4.6 50 1 0 to +70 55 to +125 V V mA W °C °C Note: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED OPERATING CONDITIONS (Voltages are referenced to GND.) Symbol Parameter VCC Supply Voltage VIH Input High Voltage VIL Input Low Voltage TA Commercial Ambient Temperature 5V 3.3V 5V 3.3V 5V 3.3V Min. Typ. Max. Unit 4.5 3.0 2.4 2.0 1.0 0.3 0 5.0 3.3 5.5 3.6 VCC + 1.0 VCC + 0.3 0.8 0.8 70 V V V °C CAPACITANCE(1,2) Symbol Parameter CIN1 CIN2 CIO Input Capacitance: A0-A10 Input Capacitance: RAS, CAS, WE, OE Data Input/Output Capacitance: I/O0-I/O7 Max. Unit 5 7 7 pF pF pF Notes: 1. Tested initially and after any design or process changes that may affect these parameters. 2. Test conditions: TA = 25°C, f = 1 MHz. 4 Integrated Circuit Solution Inc. DR017-0A 06/22/2001 IC41C82002 IC41LV82002 ELECTRICAL CHARACTERISTICS(1) (Recommended Operating Conditions unless otherwise noted.) Symbol Parameter Test Condition IIL Input Leakage Current IIO Speed Min. Max. Unit Any input 0V < VIN < Vcc Other inputs not under test = 0V 5 5 µA Output Leakage Current Output is disabled (Hi-Z) 0V < VOUT < Vcc 5 5 µA VOH Output High Voltage Level IOH = 5.0 mA with VCC=5V IOH = 2.0 mA with VCC=3.3V 2.4 V VOL Output Low Voltage Level IOL = 4.2 mA with VCC=5V IOL = 2 mA with VCC=3.3V 0.4 V ICC1 Standby Current: TTL RAS, CAS > VIH 5V 3.3V 2 0.5 mA ICC2 Standby Current: CMOS RAS, CAS > VCC 0.2V 5V 3.3V 1 0.5 mA ICC3 Operating Current: Random Read/Write(2,3,4) Average Power Supply Current RAS, CAS, Address Cycling, tRC = tRC (min.) -50 -60 120 110 mA ICC4 Operating Current: EDO Page Mode(2,3,4) Average Power Supply Current RAS = VIL, CAS, tRC = tRC (min.) -50 -60 90 80 mA ICC5 Refresh Current: RAS-Only(2,3) Average Power Supply Current RAS Cycling, CAS > VIH tRC = tRC (min.) -50 -60 120 110 mA ICC6 Refresh Current: CBR(2,3,5) Average Power Supply Current RAS, CAS Cycling tRC = tRC (min.) -50 -60 120 110 mA Notes: 1. An initial pause of 200 µs is required after power-up followed by eight RAS refresh cycles (RAS-Only or CBR) before proper device operation is assured. The eight RAS cycles wake-up should be repeated any time the tREF refresh requirement is exceeded. 2. Dependent on cycle rates. 3. Specified values are obtained with minimum cycle time and the output open. 4. Column-address is changed once each EDO page cycle. 5. Enables on-chip refresh and address counters. Integrated Circuit Solution Inc. DR017-0A 06/22/2001 5 IC41C82002 IC41LV82002 AC CHARACTERISTICS(1,2,3,4,5,6) (Recommended Operating Conditions unless otherwise noted.) Symbol tRC tRAC tCAC tAA tRAS tRP tCAS tCP tCSH tRCD tASR tRAH tASC tCAH tAR tRAD tRAL tRPC tRSH tRHCP tCLZ tCRP tOD tOE tOED tOEHC tOEP tOES tRCS tRRH tRCH tWCH tWCR tWP tWPZ tRWL tCWL tWCS tDHR 6 Parameter Random READ or WRITE Cycle Time Access Time from RAS(6, 7) Access Time from CAS(6, 8, 15) Access Time from Column-Address(6) RAS Pulse Width RAS Precharge Time CAS Pulse Width(23) CAS Precharge Time(9) CAS Hold Time (21) RAS to CAS Delay Time(10, 20) Row-Address Setup Time Row-Address Hold Time Column-Address Setup Time(20) Column-Address Hold Time(20) Column-Address Hold Time (referenced to RAS) RAS to Column-Address Delay Time(11) Column-Address to RAS Lead Time RAS to CAS Precharge Time RAS Hold Time RAS Hold Time from CAS Precharge CAS to Output in Low-Z(15, 24) CAS to RAS Precharge Time(21) Output Disable Time(19, 24) Output Enable Time(15, 16) Output Enable Data Delay (Write) OE HIGH Hold Time from CAS HIGH OE HIGH Pulse Width OE LOW to CAS HIGH Setup Time Read Command Setup Time(17, 20) Read Command Hold Time (referenced to RAS)(12) Read Command Hold Time (referenced to CAS)(12, 17, 21) Write Command Hold Time(17) Write Command Hold Time (referenced to RAS)(17) Write Command Pulse Width(17) WE Pulse Widths to Disable Outputs Write Command to RAS Lead Time(17) Write Command to CAS Lead Time(17, 21) Write Command Setup Time(14, 17, 20) Data-in Hold Time (referenced to RAS) -50 Max. Min. -60 Max. 84 50 30 8 9 38 12 0 7 0 8 30 50 13 25 10K 10K 37 104 60 40 10 9 40 14 0 10 0 10 40 60 15 30 10K 10K 45 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 10 25 5 8 30 0 5 3 12 5 10 5 0 0 25 15 12 12 30 5 10 35 0 5 3 15 5 10 5 0 0 30 15 15 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 0 0 ns 8 40 10 50 ns ns 8 7 13 8 0 39 10 7 15 10 0 39 ns ns ns ns ns ns Min. Units Integrated Circuit Solution Inc. DR017-0A 06/22/2001 IC41C82002 IC41LV82002 AC CHARACTERISTICS (Continued)(1,2,3,4,5,6) (Recommended Operating Conditions unless otherwise noted.) Symbol tACH Parameter Min. tREF Column-Address Setup Time to CAS Precharge during WRITE Cycle OE Hold Time from WE during READ-MODIFY-WRITE cycle(18) Data-In Setup Time(15, 22) Data-In Hold Time(15, 22) READ-MODIFY-WRITE Cycle Time RAS to WE Delay Time during READ-MODIFY-WRITE Cycle(14) CAS to WE Delay Time(14, 20) Column-Address to WE Delay Time(14) EDO Page Mode READ or WRITE Cycle Time RAS Pulse Width in EDO Page Mode Access Time from CAS Precharge(15) EDO Page Mode READ-WRITE Cycle Time Data Output Hold after CAS LOW Output Buffer Turn-Off Delay from CAS or RAS(13,15,19, 24) Output Disable Delay from WE CAS Setup Time (CBR REFRESH)(20, 25) CAS Hold Time (CBR REFRESH)( 21, 25) OE Setup Time prior to RAS during HIDDEN REFRESH Cycle Auto Refresh Period 2,048 Cycles tT Transition Time (Rise or Fall)(2, 3) tOEH tDS tDH tRWC tRWD tCWD tAWD tPC tRASP tCPA tPRWC tCOH tOFF tWHZ tCSR tCHR tORD 1 -50 Max. Min. -60 Max. Units 15 15 ns 8 10 ns 0 8 108 64 0 10 133 77 ns ns ns ns 26 39 20 32 47 25 ns ns ns 50 56 100K 30 60 68 100K 35 ns ns ns 5 0 12 5 0 15 ns ns 3 5 8 0 10 3 5 10 0 10 ns ns ns ns 32 32 ms 50 1 50 ns AC TEST CONDITIONS Output load: Two TTL Loads and 50 pF (Vcc = 5.0V + 10%) One TTL Load and 50 pF (Vcc = 3.3V + 10%) Input timing reference levels: VIH = 2.4V, VIL = 0.8V (Vcc = 5.0V + 10%) VIH = 2.0V, VIL = 0.8V (Vcc = 3.3V + 10%) Output timing reference levels: VOH = 2.0V, VOL = 0.8V (Vcc = 5.0V + 10%, 3.3V + 10%) Integrated Circuit Solution Inc. DR017-0A 06/22/2001 7 IC41C82002 IC41LV82002 Notes: 1. An initial pause of 200 µs is required after power-up followed by eight RAS refresh cycle (RAS-Only or CBR) before proper device operation is assured. The eight RAS cycles wake-up should be repeated any time the tREF refresh requirement is exceeded. 2. VIH (MIN) and VIL (MAX) are reference levels for measuring timing of input signals. Transition times, are measured between VIH and VIL (or between VIL and VIH) and assume to be 1 ns for all inputs. 3. In addition to meeting the transition rate specification, all input signals must transit between VIH and VIL (or between VIL and VIH) in a monotonic manner. 4. If CAS and RAS = VIH, data output is High-Z. 5. If CAS = VIL, data output may contain data from the last valid READ cycle. 6. Measured with a load equivalent to one TTL gate and 50 pF. 7. Assumes that tRCD < tRCD (MAX). If tRCD is greater than the maximum recommended value shown in this table, tRAC will increase by the amount that tRCD exceeds the value shown. 8. Assumes that tRCD > tRCD (MAX). 9. If CAS is LOW at the falling edge of RAS, data out will be maintained from the previous cycle. To initiate a new cycle and clear the data output buffer, CAS and RAS must be pulsed for tCP. 10. Operation with the tRCD (MAX) limit ensures that tRAC (MAX) can be met. tRCD (MAX) is specified as a reference point only; if tRCD is greater than the specified tRCD (MAX) limit, access time is controlled exclusively by tCAC. 11. Operation within the tRAD (MAX) limit ensures that tRCD (MAX) can be met. tRAD (MAX) is specified as a reference point only; if tRAD is greater than the specified tRAD (MAX) limit, access time is controlled exclusively by tAA. 12. Either tRCH or tRRH must be satisfied for a READ cycle. 13. tOFF (MAX) defines the time at which the output achieves the open circuit condition; it is not a reference to VOH or VOL. 14. tWCS, tRWD, tAWD and tCWD are restrictive operating parameters in LATE WRITE and READ-MODIFY-WRITE cycle only. If tWCS > tWCS (MIN), the cycle is an EARLY WRITE cycle and the data output will remain open circuit throughout the entire cycle. If tRWD > tRWD (MIN), tAWD > tAWD (MIN) and tCWD > tCWD (MIN), the cycle is a READ-WRITE cycle and the data output will contain data read from the selected cell. If neither of the above conditions is met, the state of I/O (at access time and until CAS and RAS or OE go back to VIH) is indeterminate. OE held HIGH and WE taken LOW after CAS goes LOW result in a LATE WRITE (OE-controlled) cycle. 15. Output parameter (I/O) is referenced to corresponding CAS input. 16. During a READ cycle, if OE is LOW then taken HIGH before CAS goes HIGH, I/O goes open. If OE is tied permanently LOW, a LATE WRITE or READ-MODIFY-WRITE is not possible. 17. Write command is defined as WE going low. 18. LATE WRITE and READ-MODIFY-WRITE cycles must have both tOD and tOEH met (OE HIGH during WRITE cycle) in order to ensure that the output buffers will be open during the WRITE cycle. The I/Os will provide the previously written data if CAS remains LOW and OE is taken back to LOW after tOEH is met. 19. The I/Os are in open during READ cycles once tOD or tOFF occur. 20. Determined by falling edge of CAS. 21. Determined by rising edge of CAS. 22. These parameters are referenced to CAS leading edge in EARLY WRITE cycles and WE leading edge in LATE WRITE or READMODIFY-WRITE cycles. 23. CAS must meet minimum pulse width. 24. The 3 ns minimum is a parameter guaranteed by design. 25. Enables on-chip refresh and address counters. 8 Integrated Circuit Solution Inc. DR017-0A 06/22/2001 IC41C82002 IC41LV82002 READ CYCLE tRC tRAS tRP RAS tCSH tCRP tRSH tCAS tCLCH tRCD tRRH CAS tAR tRAD tASR ADDRESS tRAH tRAL tCAH tASC Row Column Row tRCS tRCH WE tAA tRAC tCAC tCLC I/O tOFF(1) Open Open Valid Data tOE tOD OE tOES Don’t Care Note: 1. tOFF is referenced from rising edge of RAS or CAS, whichever occurs last. Integrated Circuit Solution Inc. DR017-0A 06/22/2001 9 IC41C82002 IC41LV82002 READ WRITE CYCLE (LATE WRITE and READ-MODIFY-WRITE Cycles) tRWC tRAS tRP RAS tCSH tCRP tRSH tCAS tCLCH tRCD CAS tAR tRAD tRAH tASR tRAL tCAH tASC tACH ADDRESS Row Column Row tRWD tCWL tRWL tCWD tRCS tAWD tWP WE tAA tRAC tCAC tCLZ I/O tDS Open Valid DOUT tOE tOD tDH Valid DIN Open tOEH OE Don’t Care 10 Integrated Circuit Solution Inc. DR017-0A 06/22/2001 IC41C82002 IC41LV82002 EARLY WRITE CYCLE (OE = DON'T CARE) tRC tRAS tRP RAS tCSH tCRP tRSH tCAS tCLCH tRCD CAS tAR tRAD tASR ADDRESS tRAH tRAL tCAH tACH tASC Row Column Row tCWL tRWL tWCR tWCS tWCH tWP WE tDHR tDS I/O tDH Valid Data Don’t Care Integrated Circuit Solution Inc. DR017-0A 06/22/2001 11 IC41C82002 IC41LV82002 EDO-PAGE-MODE READ CYCLE tRASP tRP RAS tCSH tCRP tCAS, tCLCH tRCD tCP tPC(1) tCAS, tCLCH tCP tRSH tCAS, tCLCH tCP CAS tAR tRAD tASR ADDRESS tASC tCAH tASC Row Column tRAL tCAH tCAH tASC Column Column Row tRAH tRRH tRCS tRCH WE tAA tRAC tCAC tCLZ I/O Open tAA tCPA tCAC tCOH Valid Data tOE tOES tAA tCPA tCAC tCLZ tOFF Valid Data tOEHC Valid Data Open tOE tOD tOES tOD OE tOEP Don’t Care Note: 1. tPC can be measured from falling edge of CAS to falling edge of CAS, or from rising edge of CAS to rising edge of CAS. Both measurements must meet the tPC specifications. 12 Integrated Circuit Solution Inc. DR017-0A 06/22/2001 IC41C82002 IC41LV82002 EDO-PAGE-MODE EARLY-WRITE CYCLE tRASP tRP RAS tCSH tPC tPC tCRP tCAS tRCD tCAS tCP tRSH tCAS tCP tCP CAS tASR tRAH ADDRESS tAR tRAD tASC Row tCAH tASC tCAH Column (A) tASC Column (B) tRCS tACH tRAL tCAH Column (N) Row tRCH tWCS tWCH WE tAA tRAC tCAC tCPA tCAC tAA tWHZ tCOH I/O Open Valid Data (A) tDS Valid Data (B) tDH DIN Open tOE OE Don’t Care Integrated Circuit Solution Inc. DR017-0A 06/22/2001 13 IC41C82002 IC41LV82002 EDO-PAGE-MODE READ-WRITE CYCLE (LATE WRITE and READ-MODIFY WRITE Cycles) tRASP tRP RAS tCSH tCRP tCAS, tCLCH tRCD tCP tPC / tPRWC(1) tCAS, tCLCH tRSH tCAS, tCLCH tCP tCP CAS tASR tRAH ADDRESS tAR tRAD tASC tCAH Row tASC tCAH Column tRWD tRCS tRAL tCAH tASC Column tCWL tWP Column tRWL tCWL tWP tCWL tWP tAWD tCWD Row tAWD tCWD tAWD tCWD WE tAA tAA tCPA tDH tDS tRAC tCAC tCLZ I/O Open tCAC tCLZ DOUT DIN DIN DOUT tOD tOE tDH tDS tCAC tCLZ DOUT tOD tOE tAA tCPA tDH tDS Open DIN tOD tOE tOEH OE Don’t Care Note: 1. tPC can be measured from falling edge of CAS to falling edge of CAS, or from rising edge of CAS to rising edge of CAS. Both measurements must meet the tPC specifications. 14 Integrated Circuit Solution Inc. DR017-0A 06/22/2001 IC41C82002 IC41LV82002 AC WAVEFORMS 4)5 4)5-ONLY REFRESH CYCLE (OE, WE = DON'T CARE) tRC tRAS tRP RAS tCRP tRPC CAS tASR ADDRESS I/O tRAH Row Row Open Don’t Care Integrated Circuit Solution Inc. DR017-0A 06/22/2001 15 IC41C82002 IC41LV82002 +*4 REFRESH CYCLE (Addresses; WE, OE = DON'T CARE) tRP tRAS tRP tRAS RAS tRPC tCP tCHR tCHR tRPC tCSR tCSR CAS Open I/O Don’t Care HIDDEN REFRESH CYCLE (WE = HIGH; OE = LOW) tRAS tRP tRAS RAS tCRP tRCD tASR tRAD tRAH tASC tRSH tCHR CAS tAR ADDRESS Row tRAL tCAH Column tAA tRAC tOFF(2) tCAC tCLZ I/O Open Valid Data tOE Open tOD tORD OE Don’t Care 16 Integrated Circuit Solution Inc. DR017-0A 06/22/2001 IC41C82002 IC41LV82002 ORDERING INFORMATION Commercial Range: 0°C to 70°C Voltage: 5V Speed (ns) 50 50 60 60 Order Part No. Refresh Package IC41C82002-50J IC41C82002-50T IC41C82002-60J IC41C82002-60T 2K 2K 2K 2K 300mil SOJ 400mil TSOP-2 300mil SOJ 400mil TSOP-2 Refresh Package 2K 2K 2K 2K 300mil SOJ 400mil TSOP-2 300mil SOJ 400mil TSOP-2 Voltage: 3.3V Speed (ns) 50 50 60 60 Integrated Circuit Solution Inc. DR017-0A 06/22/2001 Order Part No. IC41LV82002-50J IC41LV82002-50T IC41LV82002-60J IC41LV82002-60T 17 IC41C82002 IC41LV82002 Integrated Circuit Solution Inc. HEADQUARTER: NO.2, TECHNOLOGY RD. V, SCIENCE-BASED INDUSTRIAL PARK, HSIN-CHU, TAIWAN, R.O.C. TEL: 886-3-5780333 Fax: 886-3-5783000 BRANCH OFFICE: 7F, NO. 106, SEC. 1, HSIN-TAI 5TH ROAD, HSICHIH TAIPEI COUNTY, TAIWAN, R.O.C. TEL: 886-2-26962140 FAX: 886-2-26962252 http://www.icsi.com.tw 18 Integrated Circuit Solution Inc. DR017-0A 06/22/2001