IWPH01-02 SI PIN PHOTODIODE Visible to infrared range Plastic package 7 mm x 7.8 mm Active area size 2.8 mm x 2.8 mm Absolute maximum ratings Parameter VR max P max Topr Tstg Reverse voltage Power dissipation Operating temperature Storage temperature Max. Units 35 150 -25 to +85 -40 to +100 V mW °C Electrical and optical characteristics (Ta=25 ºC, unless otherwise noted) Parameter Spectral response range Peak sensitivity wavelength Photo sensitivity λ λp S Isc ID TCID Typ 320 to 1100 960 0.57 0.38 0.46 0.48 7.5 0.1 1.15 1.0x10-14 Short circuit current Dark current Temp. coefficient of ID NEP Max 10 Units nm Conditions A/W 960 nm 660 nm 780 nm 830 nm 100 lx VR=12V µA nA times/°C W/Hz1/2 VR=12V Package outline (unit: mm, tolerance unless otherwise noted: ±0.1) 7.0±0.2 2.7±0.2 3.5±0.2 2.8±0.2 active area Center of <0.8 (note 1) Inc ident light 7.8±0.2 Active area 2.8x2.8 0.51+0.14 IWPH01-02A 14.3±1 1.4 <0.8 (note 1) 0.45 ±0.14 2.3 ± 0.3 1.0 0.51+0.14 5.08 IWPH01-02B Korzhenevskogo 12, Minsk, 220108 Republic of Belarus Fax: +375 (17) 278 28 22, Phone: +375 (17) 278 07 11, 212 24 70, 212 24 61, 1 212 69 16 E-mail: [email protected] URL: www.bms.by IWPH01-02 Note 1 Shape of surface at zone (≤0.8) not defined Korzhenevskogo 12, Minsk, 220108 Republic of Belarus Fax: +375 (17) 278 28 22, Phone: +375 (17) 278 07 11, 212 24 70, 212 24 61, 2 212 69 16 E-mail: [email protected] URL: www.bms.by IWPH01-02 Spectral response o (Typ. Ta=25 C) 0.700 Photo se nsitivity (A/W) 0.600 0.500 0.400 0.300 0.200 0.100 0 300 400 500 600 700 800 900 Wa ve le ngth, nm • Directivity o 30 20 10 0 -10 40 50 (Typ. Ta=25 C) -20 -30 -40 60 -50 -60 70 -70 80 -80 90 100% 80% 60% 40% 20% RELATIVE ANGLE SENSITIVITY Korzhenevskogo 12, Minsk, 220108 Republic of Belarus Fax: +375 (17) 278 28 22, Phone: +375 (17) 278 07 11, 212 24 70, 212 24 61, 3 212 69 16 E-mail: [email protected] URL: www.bms.by -90 100 0 110 0