Databook.fxp 1/13/99 2:09 PM Page F-22 F-22 01/99 NJ36D Process Silicon Junction Field-Effect Transistor ¥ Monolithic Dual Construction ¥ High Frequency Amplifier ¥ Low-Noise Amplifier S Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts G 10 mA +150°C – 65°C to +175°C Devices in this Databook based on the NJ36D Process. D D G S Datasheet 2N5911, 2N5912 IFN5911, IFN5912 Die Size = 0.026" X 0.026" All Bond Pads = 0.004" Sq. Substrate is also Gate. At 25°C free air temperature: NJ36D Process Static Electrical Characteristics Gate Source Breakdown Voltage V(BR)GSS Reverse Gate Leakage Current IGSS Drain Saturation Current (Pulsed) IDSS Gate Source Cutoff Voltage VGS(OFF) Min Typ – 25 – 35 Max Unit Test Conditions V IG = – 1 mA, VDS = ØV 0.1 nA VGS = – 15V, VDS = ØV 1 40 mA VDS = 15V, VGS = ØV – 0.5 –8 V VDS = 15V, ID = 1 nA 90 250 Ω ID = Ø mA, VGS = ØV f = 1 kHz mS VDS = 15V, VGS = ØV f = 1 kHz 0.05 Dynamic Electrical Characteristics Drain Source ON Resistance rds(on) Forward Transconductance gfs 8.5 Input Capacitance Ciss 5.5 7.0 pF VDS = 10V, VGS = ØV f = 1 MHz Feedback Capacitance Crss 1.5 3 pF VDS = 10V, VGS = ØV f = 1 MHz Equivalent Noise Voltage e¯ N Differential Gate Source Voltage VGS1 – VGS2 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 5 5 20 nV/√HZ VDS = 15V, ID = 5 mA 100 mV f = 1 kHz VDG = 15V, ID = 5 mA www.interfet.com Databook.fxp 1/13/99 2:09 PM Page F-23 F-23 01/99 NJ36D Process Silicon Junction Field-Effect Transistor Drain Current as a Function of VDS Gfs as a Function of VGS(OFF) VGS(OFF) = Ð4.2 V 30 12 Transconductance in mM Drain Current in mA Vgs = Ø V Vgs = –1 V 20 Vgs = –2 V 10 Vgs = –3 V Vgs = –4 V 5 10 15 6 4 2 0 –1 –2 –3 –4 –5 Drain to Source Voltage in Volts Gate Source Cutoff Voltage in Volts Drain Saturation Current as a Function of VGS(OFF) Forward Tranconductance vs. Drain Current 50 40 30 20 10 0 –1 –2 –3 –4 –5 –6 –6 10 IDSS = 10 mA 8 IDSS = 15 mA 6 IDSS = 25 mA 4 2 0.1 –7 1 10 Drain Source Cutoff Voltage in Volts Drain Current in mA Input Capacitance as a Function of VGS Feedback Capacitance as a Function of VGS 20 2.5 Feedback Capacitance in pF 9 Input Capacitance in pF 8 20 Forward Transconductance in mS Drain Saturation Current in mA 0 10 8 VDS = Ø V 7 VDS = 5 V 6 VDS = 10 V 5 4 VDS = Ø V 2.0 VDS = 5 V VDS = 10 V 1.5 1.0 0.5 3 0 –1 –2 –3 –4 –5 Gate Source Voltage in Volts –6 –7 0 –4 –8 – 12 Gate Source Voltage in Volts – 16