ISAHAYA 2SA2027

〈SMALL-SIGNAL TRANSISTOR〉
2SA2027
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE(Super mini type)
DESCRIPTION
OUTLINE DRAWING
Unit:mm
2SA2027 is a super mini package resin sealed
silicon PNP epitaxial transistor,
It is designed for high voltage application.
hFE rank
4.4±0.1
.
Lot No.
1.6±0.1
φ1
2.5±0.1
FEATURE
●Small collector to emitter saturation voltage.
0.8MIN
VCE(sat)=-0.5V max
1.5±0.1
1.5±0.1
Abbreviation
0.4±0 0
. 7
0.5±0 0
. 7
0.4±0 0
. 7
For kind
APPLICATION
01
. MAX
For Hybrid IC, DC-DC converter
JEITA:SC-62
TERMINAL CONNECTER
①:EMITTER
MAXIMUM RATINGS(Ta=25℃)
Symbol
Parameter
②:COLLECTOR
Ratings
Unit
VCBO
Collector to Base voltage
-300
V
VCEO
Collector to Emitter voltage
-300
V
VEBO
Emitter to Base voltage
-7
V
-100
mA
Collector dissipation
500
mW
Junction temperature
+150
℃
Storage temperature
-55∼+150
℃
IO
Collector current
Pc
Tj
Tstg
③:BASE
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Parameter
Symbol
Test conditions
Limits
Min
Typ
Max
Unit
C to B break down voltage
V(BR)CBO
I C=-50μA ,I E=0
-300
-
-
V
E to Bbreak down voltage
V(BR) EBO
I E=-50μA ,I C=0
-7
-
-
V
C to E break down voltage
V(BR)CEO
I C=-1mA ,R
-300
-
-
V
BE=∞
Collector cut off current
ICBO
V CB=--300V, I E=0mA
-
-
-0.5
μA
Emitter cut off current
IEBO
V EB=-5V, I C=0mA
-
-
-0.5
μA
DC forward current gain
hFE
V CE=-10V, I C=-10mA
50
-
305
VCE(sat)
I C=-100mA ,IB=-10mA
-
-
-0.5
V
V CE=-6V, I E=10mA
-
40
-
MHz
V
-
3.0
-
pF
C to E Saturation Vlotage
Gain bandwidth product
Collector output capacitance
fT
Cob
=-6V, I =0,f=1MHz
ISAHAYA ELECTRONICS CORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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Jan.2003