〈SMALL-SIGNAL TRANSISTOR〉 2SC5621 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING 2SC5621 is a super mini package resin sealed silicon NPN epitaxial transistor.It is designed for high frequency application. 0.4 FEATURE 1.6 0.8 Unit:mm 0.4 1 ・High gain bandwidth product. fT=4.5GHz ・High gain,low noise. 3 2 ・Can operate at low voltage. ・Super mini package for easy mounting. APPLICATION For TV tuners,high frequency amplifier,celluar phone system. 1 2 3 MAXIMUM RATINGS (Ta=25℃) Symbol Parameter Ratings Unit VCBO Collector to Base voltage 20 V VCEO Collector to Emitter voltage 12 V VEBO IC Emitter to Base voltage 3 V Collector current 50 mA PC Collector dissipation 100 Tj Junction temperature +125 mW ℃ Tstg Storage temprature -55~+125 ℃ TERMINAL CONNECTOR : BASE : EMITTER EIJA: : COLLECTOR MARKING G TYPE NAME W hFE ITEM ELECTRICAL CHARACTERISTICS (Ta=25℃) Symbol Parameter Limits Test conditions Min I CBO I EBO Collector cut off current Emitter cut off current VCB =10V, I E =0mA VEB =1V, I C=0mA hFE DC forward current gain VCE =5V, I C=20mA fT Gain bandwidth product VCE =5V, I E =20mA Collector output capacitance C ob S212 Insertion power gain Noise figure NF 50 VCE =5V, I C=5mA, f =1GHz 7.5 Unit Max 1.0 μA 1.0 μA 250 4.5 VCB =5V, I E =0mA, f =1MHz VCE =5V, I C=20mA, f =1GHz Typ 1.0 GHz pF 9.0 1.5 dB dB 〈SMALL-SIGNAL TRANSISTOR〉 2SC5621 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE 直流電流増幅率−コレク DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT 1000 エミッタ接地伝達 COMMON EMITTER TRANSFER 100 Ta=25℃ VCE=5V Ta=25℃ VCE=5 10 100 1 0.1 10 0.01 1 0.001 0.1 1 10 COLLECTOR CURRENT コレクタ電流 IC 100 0.5 0.6 0.8 0.9 1 電力利得−コレクタ 利得帯域幅積−コレク GAIN BANDWIDTH PRODUCT VS. COLLECTOR CURRENT 10.00 0.7 BASE TO EMITTER VOLTAGE VBE(V) ベース・エミッタ間電圧 V IC(mA) POWER GAIN VS. COLLECTOR CURRENT 20.00 Ta=25℃ VCE=5 18.00 Ta=25 VCE=5 16.00 f=0.5GH 14.00 12.00 1.00 10.00 f=1.0GH 8.00 6.00 4.00 2.00 0.10 0.1 0.00 1.010.0 100.0 COLLECTOR CURRENT コレクタ電流 IC 0.11.010.0 IC(mA) 100.0 COLLECTOR CURRENT IC(mA) コレクタ電流 IC コレクタ出力容量− COLLECTOR OUTPUT CAPACITANCE VS.コレクタ・ベース間電圧特性 COLLECTOR TO BASE VOLTAGE 雑音指数−コレクタ電流特性 NOISE FIGURE VS. COLLECTOR CURRENT 10.0 5.0 Ta=25℃ IE=0mA f=1MHz 4.5 Ta=25℃ V CE =5V 4.0 f=1.0GHz 3.5 3.0 1.0 2.5 2.0 1.5 1.0 0.5 0.1 0.0 0.1 1 10 (V) コレクタ・ベース間電圧 V COLLECTOR TO BASE VOLTAGE CB VCB(V) 100 1 10 コレクタ電流 I COLLECTOR CURRENT C (mA) IC(mA) 100 〈SMALL-SIGNAL TRANSISTOR〉 2SC5621 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE S PARAMETER VCE=5V,IC=10mA FREQUENCY (MHZ) 500.00 600.00 700.00 800.00 900.00 1000.00 1100.00 1200.00 1300.00 1400.00 1500.00 1600.00 1700.00 1800.00 1900.00 2000.00 S21 S11 MAG 0.297 0.292 0.294 0.287 0.285 0.284 0.285 0.283 0.287 0.282 0.278 0.285 0.286 0.286 0.288 0.287 ANG -155.6 -165.3 -172.9 179.5 174.2 168.6 163.2 158.8 154.2 150.7 146.5 142.4 138.8 135.1 131.4 128.8 MAG 0.085 0.100 0.114 0.128 0.143 0.155 0.169 0.182 0.197 0.211 0.222 0.236 0.249 0.263 0.274 0.288 ANG 63.2 63.9 65.1 65.1 64.7 64.5 63.7 63.2 61.9 61.4 60.8 59.2 57.9 56.8 55.8 55.0 S12 MAG ANG 86.2 5.895 81.4 4.977 77.1 4.308 73.0 3.791 69.3 3.413 65.6 3.098 62.5 2.833 59.2 2.631 55.9 2.440 53.2 2.282 50.2 2.142 47.4 2.030 44.7 1.923 42.0 1.832 39.5 1.751 37.0 1.677 S22 MAG 0.310 0.308 0.292 0.291 0.290 0.294 0.294 0.302 0.303 0.306 0.307 0.310 0.321 0.322 0.325 0.330 ANG -43.6 -45.0 -45.0 -45.7 -48.2 -50.4 -51.9 -54.4 -56.7 -58.9 -61.3 -63.3 -65.5 -67.8 -69.8 -72.4 ANG 60.1 61.7 63.2 62.7 63.0 62.8 61.9 62.0 60.6 59.9 59.7 58.6 57.8 56.8 55.6 54.6 S12 MAG ANG 87.8 5.733 82.8 4.852 78.2 4.205 74.0 3.701 70.2 3.338 66.4 3.028 63.0 2.773 59.6 2.572 56.3 2.392 53.5 2.232 50.6 2.097 47.7 1.989 44.8 1.883 42.2 1.797 39.5 1.719 37.0 1.642 S22 MAG 0.337 0.331 0.312 0.310 0.308 0.310 0.311 0.318 0.318 0.317 0.322 0.323 0.332 0.335 0.338 0.342 ANG -44.9 -46.8 -46.4 -47.2 -49.6 -51.5 -53.0 -55.4 -57.7 -60.7 -62.2 -64.1 -66.3 -68.4 -70.4 -72.7 S12 S22 MAG 0.382 0.369 0.347 0.340 0.335 0.336 0.335 0.342 0.341 0.341 0.345 0.344 0.353 0.356 0.360 0.363 ANG -46.1 -47.9 -47.8 -48.4 -50.5 -52.7 -54.0 -56.5 -58.3 -60.2 -62.9 -65.1 -66.9 -68.9 -70.8 -73.1 VCE=5V,IC=8mA FREQUENCY (MHZ) 500.00 600.00 700.00 800.00 900.00 1000.00 1100.00 1200.00 1300.00 1400.00 1500.00 1600.00 1700.00 1800.00 1900.00 2000.00 S11 MAG 0.310 0.305 0.303 0.294 0.294 0.290 0.291 0.290 0.291 0.286 0.284 0.289 0.289 0.292 0.292 0.292 ANG -148.5 -159.2 -167.6 -175.0 178.8 172.6 167.4 162.3 157.4 153.5 149.1 145.3 141.3 137.4 133.9 130.5 S21 MAG 0.089 0.101 0.114 0.127 0.140 0.154 0.166 0.181 0.194 0.206 0.219 0.233 0.247 0.258 0.271 0.284 VCE=5V,IC=6mA FREQUENCY (MHZ) 500.00 600.00 700.00 800.00 900.00 1000.00 1100.00 1200.00 1300.00 1400.00 1500.00 1600.00 1700.00 1800.00 1900.00 2000.00 S11 MAG 0.343 0.328 0.323 0.311 0.309 0.303 0.302 0.303 0.302 0.297 0.294 0.299 0.300 0.301 0.302 0.299 ANG -139.3 -150.5 -159.4 -167.9 -174.4 178.8 172.7 167.4 162.1 158.1 153.7 148.7 144.7 140.6 136.8 133.3 S21 MAG 0.091 0.104 0.115 0.127 0.139 0.153 0.163 0.176 0.190 0.201 0.214 0.225 0.238 0.250 0.263 0.276 ANG 56.5 57.6 58.7 59.0 59.9 59.7 59.8 59.1 59.1 59.1 58.3 57.5 56.5 56.0 55.1 54.3 MAG 5.461 4.641 4.036 3.565 3.218 2.919 2.675 2.486 2.306 2.162 2.029 1.924 1.824 1.739 1.666 1.592 ANG 90.3 84.9 79.9 75.4 71.2 67.3 63.8 60.3 56.8 54.0 50.8 47.8 44.9 42.2 39.5 36.9 〈SMALL-SIGNAL TRANSISTOR〉 2SC5621 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE S PARAMETER VCE=5V,IC=4mA FREQUENCY (MHZ) 500.00 600.00 700.00 800.00 900.00 1000.00 1100.00 1200.00 1300.00 1400.00 1500.00 1600.00 1700.00 1800.00 1900.00 2000.00 S11 MAG 0.399 0.375 0.364 0.348 0.341 0.332 0.329 0.327 0.325 0.321 0.318 0.320 0.322 0.324 0.324 0.323 ANG -126.4 -137.6 -148.1 -156.9 -164.5 -171.8 -178.6 175.5 169.3 165.0 159.9 154.5 150.2 145.7 141.4 137.7 S21 MAG 0.099 0.110 0.118 0.127 0.137 0.149 0.159 0.170 0.180 0.193 0.203 0.215 0.226 0.238 0.250 0.262 ANG 51.8 50.9 52.4 53.4 53.7 55.0 55.1 55.8 55.1 56.1 55.7 55.7 55.4 54.9 54.8 54.0 S12 MAG ANG 4.984 94.1 4.260 88.1 3.729 82.7 3.306 77.7 2.994 73.0 2.723 68.9 2.502 65.0 2.326 61.3 2.162 57.5 2.027 54.5 1.905 51.2 1.807 48.1 1.715 45.0 1.635 42.1 1.564 39.4 1.498 36.7 S22 MAG ANG 0.455 -45.8 0.439 -48.2 0.408 -48.4 0.397 -49.7 0.387 -52.0 0.387 -54.0 0.383 -55.2 0.387 -57.3 0.383 -59.7 0.382 -61.8 0.385 -63.7 0.385 -65.4 0.393 -67.6 0.395 -69.5 0.397 -71.7 0.401 -73.9 S12 S22 MAG ANG 0.593 -42.3 0.005 -46.3 0.004 -47.5 0.003 -49.2 0.003 -51.6 0.002 -54.1 0.002 -55.8 0.001 -58.2 0.001 -60.2 0.001 -62.4 0.001 -64.5 0.000 -66.6 0.000 -68.7 0.000 -70.5 0.000 -72.5 0.000 -75.0 VCE=5V,IC=2mA FREQUENCY (MHZ) 500.00 600.00 700.00 800.00 900.00 1000.00 1100.00 1200.00 1300.00 1400.00 1500.00 1600.00 1700.00 1800.00 1900.00 2000.00 S11 MAG 0.506 0.480 0.453 0.434 0.421 0.408 0.398 0.391 0.388 0.381 0.377 0.379 0.380 0.377 0.380 0.379 ANG -106.9 -118.6 -130.6 -139.7 -148.4 -156.6 -164.1 -171.0 -177.9 176.7 171.4 165.0 160.0 154.6 149.2 145.1 S21 MAG 0.120 0.128 0.133 0.139 0.144 0.149 0.154 0.161 0.168 0.174 0.183 0.191 0.202 0.212 0.223 0.233 ANG 44.1 42.3 42.1 42.3 42.3 43.7 44.6 46.5 47.2 48.6 50.1 50.7 51.9 52.6 52.9 53.5 MAG 4.062 3.503 3.115 2.767 2.519 2.316 2.129 1.992 1.857 1.744 1.643 1.562 1.481 1.416 1.357 1.294 ANG 100.4 94.0 87.7 82.0 76.7 71.9 67.4 63.1 58.9 55.4 51.8 48.3 44.9 41.9 39.0 36.0 http://www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! ・Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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