〈Transistor〉 2SC5626 For High Frequency Amplify Application Silicon NPN Epitaxial Type (Super Mini type) DESCURIPTION Mitsubishi 2SC5626 is a super mini packege resin sealed silicon NPN epitaxial ty pe transistor. It is designed f or high f requency amplif y application. OUTLINE DRAWING Unit:mm 2.1 0.425 1.25 0.425 FEATURE 1.30 ・Super mini package f or easy mounting 0.65 ・High gain band width product 0.3 1 2.0 0.65 3 2 APPLICATION Small ty pe machine high f requency amplif y application 0.15 0.9 0.7 0～0.1 TERMINAL CONNECTOR 1 : BASE 2 : EMITTER 3 : COLLECTOR JEITA : SC-70 JEDEC : - MAXIMUM RATINGS (Ta=25℃) SY MBOL RATINGS PARAMETER UNIT VCBO Collector to Base v oltage 30 V VEBO Emitter to Base v oltage 4 V VCEO Collector to Emitter voltage 20 V 50 150 mA I Collector current C PC Collector dissipation(Ta=25℃) Tj Junction temperature Storage temprature Tstg +150 mW ℃ -55to+150 ℃ MARKING S W TYPE NAME ELECTRICAL CHARACTERISTICS (Ta=25℃) SY MBOL PARAMETER TEST CONDITIONS LIMITS MIN TY P MAX UNIT V(BR)CBO C to B break down v oltage I C=50μ A, I E =0mA 30 V V(BR)CEO C to E break down v oltage I C=100μ A, R BE =∞ 20 V V(BR)EBO E to B break down v oltage I C=50μ A, I C=0mA 4 V I CBO Collector cut cf f current VCB =20V, I E =0 I Emitter cut of f current VEB =3V, I C=0 VCE =10V, I C=5mA VCE(sat) DC f orward current gain C to E Saturation v oltage fT Gain band width product VCE =5V, I E =-10mA C ob Collector output capacitance VCB =6V, I E =0, f =1MHz EBO hFE 50 148 600 1100 I C=10mA, I B =1mA 0.1 1.2 ISAHAYA ELECTRONICS CORPORATION 0.5 μA 0.5 μA 0.3 V MHz 1.5 pF 〈Transistor〉 2SC5626 For High Frequency Amplify Application Silicon NPN Epitaxial Type (Super Mini type) エミッタ接地出力特性 Common emitter transfer C o m m oエミッタ接地伝達特性 n emitter output 20 160μ A 180μ A 100 18 V CE=6V Ta=25℃ Ta=25℃ 140μ A 16 120μ A 14 10 100μ A 12 80μ A 10 60μ A 8 1 40μ A 6 20μ A 4 2 IB=0μ A 0 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 1.6 2 4 6 8 10 12 14 16 18 ベース・エミッタ間電圧 V base to collector voltage VBE (V) BE(V) DC forward current gain 直流電流増幅率－コレクタ電流特性 VS. collector current c o l l e cコレクタ・エミッタ飽和電圧 tor to emitter voltage V S . c o l－コレクタ電流特性 lector current 10 10000 Ta=25℃ IC/IB=10/1 Ta=25℃ VCE=10V 1000 1 100 0.1 10 0.01 1 0.1 110 100 collector currentI コレクタ電流 0.11 1000 10 100 collector コレクタ電流 current I ICC(mA) (mA) C (mA) CI (mA) collector output/input capacitance V S . C o l入出力容量－ベース電圧特性 lector to Base Voltage G利得帯域幅積－エミッタ電流特性 ain band width product VS. Emitter current 10000 100.0 V CE=5V Ta=25℃ f=1MHz IE=0A IC=0A Ta=25℃ 1000 10.0 100 1.0 Cob 0.1 Cib 0.1 10 1 10100 E (mA) emitter エミッタ電流 current II E (mA) 20 コレクタ・エミッタ間 電 圧 voltage V C E ( V ) V CE(V) collector to emitter 0.11.010.0 100.0 コレクタ・ベース電圧 V (V) collector to base voltage VC BCB (V) (V) エミッタ・ベース電圧 V emitter to base voltage VE BEB (V) ISAHAYA ELECTRONICS CORPORATION 〈Transistor〉 2SC5626 For High Frequency Amplify Application Silicon NPN Epitaxial Type (Super Mini type) C o l l e c t o コレクタ・ベース時定数 r to base time constant V S . E m i t t e－エミッタ電流特性 r current 100 VCB=5V f=31.8MHz Ta=25℃ 10 1 0.1 1.0 10.0 (mA) emitter エミッタ電流 I current IEE(mA) ISAHAYA ELECTRONICS CORPORATION Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. Notes regarding these materials ·These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the customer’s application; they don't convey any license under any intellectual property rights, or any other rights, belonging ISAHAYA or third party. ·ISAHAYA Electronics Corporation assumes no responsibility for any damage, or infringement of any third party's rights , originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials. ·All information contained in these materials, including product data, diagrams and charts, represent information on products at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed herein. ·ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes , such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. ·The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these materials. ·If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. ·Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these materials or the products contained therein. Jan.2003