2SC6046 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION 2SC6046 is a silicon NPN epitaxial type transistor designed with high collector current, low VCE（sat）. Unit：mm 2.5 0.5 1.5 0.5 0.4 ① 0.95 ●High collector current IC（MAX）=600mA ●Low collector to emitter saturation voltage VCE（sat）<0.3Vmax(IC=150mA、IB=15mA） 1.90 2.90 0.95 FEATURE ③ 0.16 0∼0.1 0.8 1.1 ② APPLICATION For switching application, small type motor drive application. MAXIMUM RATINGS（Ta.=25℃） 記 号 VCEO VCBO VEBO IC PC Tj Tstg 項 目 Collector to Emitter voltage Collector to Base voltage Emitter to Base voltage Collector current Collector dissipation Junction temperature Storage temperature 定 格 値 40 75 6 600 200 +150 -55∼+150 単 位 V V V mA mW ℃ ℃ TERMINAL CONNECTOR ①：BASE EIAJ：SC-59 ②：EMITTER JEDEC：TO-236 ③：COLLECTOR Resemblance MARKING TypeName B・ W ELECTRICAL CHARACTERISTICS（Ta.=25℃） Symbol V（BR）CEO V（BR）CBO V（BR）EBO ICBO IEBO hFE VCE（sat） VBE（sat） fT Cob Parameter C to E break down voltage C to B break down voltage E to B break down voltage Collector cut off current Emitter cut off current DC forward current gain C to E saturation voltage B to E saturation voltage Gain band width product Collector output capacitance Test condition IC=1mA、IB=0 IC=10uA、IE=0 IE=10uA、IC=0 VCB=60V、IE=0 VEB=3V、IC=0 IC=150mA、VCE=10V IC=150mA、IB=15mA IC=150mA、IB=15mA IE=-20mA、VCE=20V、f=100MHz VCB=10V、f=1MHz Min 40 75 6 Limits Typ 100 100 300 0.3 1.2 100 0.6 ISAHAYA ELECTRONICS CORPORATION Max 250 8 Unit V V V nA nA --V V MHz pF 2SC6046 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE TYPICAL CHARACTERISTICS DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT 1000 300 DC FORWARD CURRENT GAIN hFE COLLECTOR DISSIPATION Pc(mW) COLLECTOR DISSIPATION VS. AMBIENT TEMPERATURE 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Ta=25℃ VCE=10V 100 VCE=1V 10 0.1 1 10 100 COLLECTOR CURRENT IC(mA) AMBIENT TEMPERATURE Ta (℃) COLLECTOR TO EMITTER VOLTAGE VS. BASE CURRENT COMMON EMITTER OUTPUT 0.25 2.0 Ta=25℃ IB=1.0mA 0.20 IB=0.9mA IB=0.8mA 0.15 IB=0.7mA IB=0.6mA 0.10 IB=0.5mA IB=0.4mA IB=0.3mA 0.05 COLLECTOR TO EMITTER VOLTAGE VCE(V) COLLECTOR CURRENT Ic(A) 1000 Ta=25℃ 1.6 IC=1mA IC=10mA IC=100mA IC=600mA 1.2 0.8 0.4 IB=0.2mA IB=0.1mA 0.0 0.001 0.00 0 2 4 6 8 10 0.01 10 100 10 B TO E SATURATION VOLTAGE VBE(sat)(V) 10 C TO E SATURATION VOLTAGE VCE(sat)(mV) 1 B TO E SATURATION VOLTAGE VS. COLLECTOR CURRENT C TO E SATURATION VOLTAGE VS. COLLECTOR CURRENT Ta=25℃ IC/IB=10 1 0.1 0.01 0.001 0.1 BASE CURRENT IB(mA) COLLECTOR TO EMITTER VOLTAGE VCE(V) 0.01 0.1 COLLECTOR CURRENT Ic(A) 1 Ta=25℃ IC/IB=10 1 0.1 0.001 0.01 0.1 COLLECTOR CURRENT Ic(A) ISAHAYA ELECTRONICS CORPORATION 1 2SC6046 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE GAIN BAND WIDTH PRODUCT VS. COLLECTOR CURRENT COLLECTOR OUTPUT CAPACITANCE VS. COLLECTOR TO BASE VOLTAGE 100 Ta=25℃ VCE=20V COLLECTOR OUTPUT CAPACITANCE Cob(pF) GAIN BAND WIDTH PRODUCT fT(MHz) 1000 100 Ta=25℃ IE=0 f=1MHz 10 1 10 1 10 100 COLLECTOR CURRENT Ic(mA) 1000 0 10 20 COLLECTOR TO BASE VOLTAGE VCB(V) ISAHAYA ELECTRONICS CORPORATION 30 Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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