〈SMALL-SIGNAL TRANSISTOR〉 2SC6053 FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit：ｍｍ 2SC6053 is a mini package resin sealed silicon NPN epitaxial type transistor designed with high collector current, small VCE(sat). 2.5 . 1.5 ●Super mini package for easy mounting IC = 650mA ●High collector current ① ② 0.5 0.4 0.95 2.9 1.90 FEATURE 0.95 0.5 ③ ●Low collector to emitter saturation voltage 0.16 0.8 1.1 VCE(sat) = 0.5V max 0∼0.1 APPLICATION Small type motor drive, relay drive, power supply TERMINAL CONNECTER ①：BASE MAXIMUM RATINGS（Ta=25℃） Symbol Parameter Ratings Unit VCBO Collector to Base voltage 25 V VCEO Collector to Emitter voltage 20 V VEBO 4 V Collector current 650 mA Pc Collector dissipation 150 mW Tj Junction temperature ＋150 ℃ Tstg Storage temperature -55∼＋150 ℃ I O Emitter to Base voltage ②：EMITTER EIAJ ： SC-59 ③：COLLECTOR JEDEC ： TO-236 resemblance MARKING ・B F ｈＦＥ ITEM TYPE NAME ELECTRICAL CHARACTERISTICS（Ta=25℃） Parameter Symbol C to E break down voltage C to B break down voltage E to B break down voltage Collector cut off current Emitter cut off current DC forward current gain C to E saturation voltage Gain band width product ＊： It shows hFE classification in right table. Limits Test conditions Min V（BR）CEO V（BR）CBO V（BR）EBO ICBO IEBO IC=100μA、RBE=∞ IC=10μA、IE=0 IE=10μA、IC=0 VCB=25V、IE=0 VEB=2V、IC=0 20 25 4 hFE * VCE（sat） fT VCE=4V、IC=100mA IC=500mA、IB=25mA VCE=6V、IE=-10mA 150 Typ Max V V V μA μA 1 1 0.3 290 Unit 800 0.5 --V MHz Item E F G hFE 150 to 300 250 to 500 400 to 800 ISAHAYA ELECTRONICS CORPORATION 〈SMALL-SIGNAL TRANSISTOR〉 2SC6053 FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE TYPICAL CHARACTERISTICS DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT COLLECTOR DISSIPATION VS. AMBIENT TEMPERATURE 1000 DC FORWARD CURRENT GAIN hFE COLLECTOR CURRENT Pc (mW) 250 200 150 100 50 0 Ta=25℃ VCE=4V 100 10 1 0 50 100 150 200 1 10 400 Ta=25℃ IB=6mA 600 IB=5mA IB=4mA IB=3mA IB=2mA 400 IB=1mA 200 COLLECTOR CURRENT IC(mA) COLLECTOR CURRENT IC(mA) IB=9mA IB=8mA IB=7mA IB=1.0mA IB=0.9mA IB=0.8mA 300 IB=0.7mA IB=0.6mA IB=0.5mA 200 IB=0.4mA IB=0.3mA IB=0.2mA 100 IB=0.1mA IB=0mA 0 IB=0mA 0 0 1 2 3 4 0 5 4 8 12 16 20 C TO E VOLTAGE VCE(V) C TO E VOLTAGE VCE(V) COMMON EMITTER TRANSFER (1) COMMON EMITTER TRANSFER (2) 800 10 COLLECTOR CURRENT IC(mA) COLLECTOR CURRENT IC(mA) 1000 COMMON EMITTER OUTPUT (2) COMMON EMITTER OUTPUT (1) 800 IB=10mA 100 COLLECTOR CURRENT IC(mA) AMBIENT TEMPERATURE Ta(℃) Ta=25℃ VCE=4V 600 400 200 0 Ta=25℃ VCE=4V 8 6 4 2 0 0 0.2 0.4 0.6 0.8 B TO E VOLTAGE VBE(V) 1 0 0.2 0.4 0.6 0.8 B TO E VOLTAGE VBE(V) ISAHAYA ELECTRONICS CORPORATION 1 〈SMALL-SIGNAL TRANSISTOR〉 2SC6053 FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE TYPICAL CHARACTERISTICS C TO E SATURATION VOLTAGE VS. COLLECTOR CURRENT GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT 1000 C TO E SATURATION VOLTAGE VCE(sat)(mV) GAIN BAND WIDTH PRODUCT fT (MHz) 500 Ta=25℃ VCE=6V 400 300 200 100 Ta=25℃ IC/IB=20 100 10 1 0 -1 -10 EMITTER CURRENT IE (mA) -100 1 10 100 COLLECTOR CURRENT IC(mA) ISAHAYA ELECTRONICS CORPORATION 1000 Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. 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Please contact ISAHAYA electronics corporation or an authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes , such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. ·The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these materials. ·If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. ·Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these materials or the products contained therein. Jan.2003