〈Transistor〉 ISC5804AT2 Low frequency Application Silicon NPN Epitaxial Type DESCRIPTION OUTLINE 2SC5804 is a super mini package resin sealed DRAWING Unit：ｍｍ silicon NPN epitaxial transistor, It is designed for low frequency application. 1.21±0.1 Since it is a super-thin flat lead type package,a high-density 0.81±0.1 0.2±0.05 mounting are possible. 0.2±0.05 ● Low collector to emitter saturation voltage ① ② 0.25±0.02 ● Excellent linearly of DC forward current gain. 0.4 ● Super-thin flat lead type package. t=0.45mm 0.8 1.21±0.1 FEATURE 0.4 Complementary with 2SC3052. ③ VCE(sat)=0.3V max (@Ic=100mA/IB=10mA) 0.50±0.03 APPLICATION For hybrid IC,small type machine low frequency voltage amplify application. ※The dimension tolerance is reference value. JEITA： MAXIMUM RATING(Ta=25℃) PARAMETER SYMBOL RATING UNIT VCBO Collector to Base voltage 50 V VEBO Emitter to Base voltage 6 V VCEO Collector to Emitter voltage 50 V IC Collector current 150 mA PC Collector dissipation(Ta=25℃) 150 Tj Junction temperature ＋125 ℃ Storage temperature -55～＋ 125 ℃ Tstg （*） Terminal Connector ①：Base ②：Emitter ③：Collector Equivalent circuit mW Type name hFE Item J ※package mounted on 9mm×19mm×1mm glass-epoxy substrate. Ｆ Ｌ A B C D E I H F G A～F running No. ELECTRICAL CHARACTERISTICS (Ta=25℃) G～J Month of Manufacture SYMBOL PARAMETER Collector to Emitter Breakdown voltage V(BR)CEO Collector cut off current ICBO V CB=50V, I E=0mA Emitter cut off current IEBO V EB DC forward current gain hFE V CE DC forward current gain hFE V C to E saturation voltage VCE(sat) LIMIT TEST CONDITION UNIT TYP MIN TYP 50 ― ― V - - 0.1 μA =6V, I C=0mA - - 0.1 μA =6V, I C=1mA 150 ※ 800 - CE=6V, I C=0.1mA 90 - - - - - 0.3 v IC=100μA, R BE =∞ IC=100mA, I B=10mA Gain bandwidth product fT V CE Collector output capacitance Cob V =6V, I E=-10mA CB=6V, I E=0mA,f=1MHz Noise figure NF V CE =6V, I E=-0.1mA,f=1kHz,RG=2kΩ MIN - 200 - MHz - 2.5 - pF - - 15 dB ※ It shows hFE classification in below table. Item hFE E 150～300 ISAHAYA ELECTRONICS CORPORATION F 250～500 G 400～800 〈Transistor〉 ISC5804AT2 Low frequency Application Silicon NPN Epitaxial Type Collector dissipation－AMBIENT TEMPERTURE Collector dissipation Pc ( mW ) 200 150 100 50 0 0 25 50 75 100 AMBIENT TEMPERTURE Ta (℃) ISAHAYA ELECTRONICS CORPORATION 125 Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. 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