ISAHAYA RT4N631C

〈SMALL-SIGNAL TRANSISITOR〉
RT4N631C
TRANSISTOR WITH RESISTOR
FOR MUTING APPLICATION
SILICON NPN EPITAXIAL TYPE
OUTLINE DRAWING
DESCRIPTION
RT4N631C is a silicon NPN epitaxial type transistor.
This product is most suitable for muting circuit ,
switching circuit because of low on resistance , small
collector to emitter saturation voltage.
Unit : mm
2.5
1.5
● Small package for easy mounting.
②
0.5
0.4
0.95
FEATURE
①
0.9 5
2.9
1.90
0.5
③
● High reverse hFE
● Small collector to emitter saturation voltage
0~0.1
APPLICATION
muting circuit、switching circuit
JEITA:SC-59
EQUIVALENT CIRCUIT
R1
B
(IN)
0.8
1.1
Ron=1.1Ω(TYP.)(@VI=7V)
0.16
VCE(sat)=40mV(TYP.)(@IC=50mA/IB=2.5mA)
●Low on Resistance
TERMINAL CONNECTOR
①:BASE
C
(OUT)
②:EMITTER
③:COLLECTOR
R2
E
(GND)
MAXIMUM RATINGS(Ta=25℃)
Symbol
Parameter
Ratings
Unit
VCBO
Collector to Base voltage
20
V
VEBO
VCEO
IC
Emitter to Base voltage
-10
10
V
Collector to Emitter voltage
20
V
Collector current
600
mA
PC
Peak Collector current
200
mW
Tj
Collector dissipation(Total Ta=25℃)
+150
℃
-55~+150
℃
Tstg
Junction temperature
ISAHAYA ELECTRONICS CORPORATION
〈SMALL-SIGNAL TRANSISITOR〉
RT4N631C
TRANSISTOR WITH RESISTOR
FOR MUTING APPLICATION
SILICON NPN EPITAXIAL TYPE
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Parameter
C to E break down voltage
Symbol
V(BR)CEO
Limits
Test conditions
Unit
Min
Typ
Max
20
-
-
V
=20V, I E=0mA
-
-
0.5
μA
=5V ,I C=50mA
70
190
-
-
I C=1mA,R
BE
=∞
Collector cut off current
ICBO
V
CB
DC forward current gain
hFE
V
CE
C to E saturation voltage
VCE(sat)
I C=50mA ,I B=2.5mA
-
40
80
mV
Input on voltage
VI(ON)
VCE=0.3V, IC=10mA
-
1.5
2.0
V
Input off voltage
VI(OFF)
VCE=5V, IC=100μA
0.5
1.0
-
V
Input resistor
R1
-
4.8
6.8
8.8
kΩ
Resistor ratio
R2/R1
-
0.8
1
1.2
-
-
120
-
MHz
-
1.1
-
Ω
Gain band width product
fT
Output “ON” resistance
Ron
V
CE
=10V, I E=-20mA, f=100MHz
V I=7V, R L=1kΩ, f=1MHz
ISAHAYA ELECTRONICS CORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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Jan.2003