FUE 30-12N1 VRRM = 1200 V ID(AV)M = 30 A trr = 130 ns Fast Three Phase Rectifier Bridge in ISOPLUS i4-PACTM 1 3 4 5 1 5 2 Features Rectifier Bridge Symbol Conditions Maximum Ratings VRRM 1200 V A A A IFAV ID(AV)M IFSM TC = 90°C; sine 180° (per diode) TC = 90°C (bridge) TVJ = 25°C; t = 10 ms; sine 50 Hz 12 30 80 EAS IAS= 9 A; LAS=180 µH; TC = 25°C; non repetitive 8.7 mJ Ptot TC = 25°C 50 Symbol Conditions (per diode) W Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VF IF = 10 A; TVJ = 25°C TVJ = 125°C 2.2 1.6 2.6 V V IR VR = VRRM; TVJ = 25°C TVJ = 125°C 0.1 0.1 mA mA IRM trr IF = 15 A; diF/dt = -400 A/µs; TVJ = 125°C VR = 600 V 16 130 A ns RthJC (per diode) • HiPerFREDTM Epitaxial Diodes - fast and soft reverse recovery – low switching losses - avalanche rated - low leakage current • ISOPLUS i4-PACTM package - isolated back surface - low coupling capacity between pins and heatsink - enlarged creepage towards heatsink - application friendly pinout - high reliability - industry standard outline Applications • high frequency rectifiers, output rectifiers of switched mode power supplies • three phase mains rectifiers with minimized electromagnetic emissions 2.3 K/W IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved 0548 Data according to IEC 60747 and refer to a single diode unless otherwise stated. 1-3 FUE 30-12N1 Component Conditions Maximum Ratings TVJ Tstg VISOL IISOL ≤ 1 mA; 50/60 Hz FC mounting force with clip Symbol Conditions CP coupling capacity between shorted pins and mounting tab in the case dS,dA dS,dA pin - pin pin - backside metal RthCH with heatsink compound -55...+150 -55...+125 °C °C 2500 V~ 20...120 N Characteristic Values min. typ. max. 40 1.7 5.5 Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved pF mm mm 0.15 K/W 9 g 0548 Symbol Dimensions in mm (1 mm = 0.0394") 2-3 FUE 30-12N1 TVJ = 100°C VR = 600 V µC 2.5 TVJ = 150°C TVJ = 100°C TVJ = 25°C 30 IF 50 3.0 40 A 35 25 Qr IRM IF = 30 A IF = 15 A IF = 7.5 A 2.0 TVJ = 100°C VR = 600 V A 40 IF = 30 A IF = 15 A IF = 7.5 A 30 1.5 20 20 15 1.0 10 10 0.5 5 0 0 1 2 3 V 0.0 100 4 0 A/µs -diF/dt VF Fig. 1 Forward current IF vs. VF 1000 Fig. 2 Reverse recovery charge Qr versus -diF/dt 2.0 180 trr 120 600 A/µs 800 1000 -diF/dt 1.2 µs VFR IF = 30 A IF = 15 A IF = 7.5 A 140 IRM 0.5 400 TVJ = 100°C IF = 15 A tfr V 160 Kf 1.0 200 Fig. 3 Peak reverse current IRM versus -diF /dt TVJ = 100°C VR = 600 V ns 1.5 0 tfr 80 0.8 40 0.4 120 QR VR 0.0 100 0 40 80 120 °C 160 0 0 200 TVJ 400 600 800 1000 A/µs 0 200 -diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ Fig. 5 Recovery time trr vs. -diF /dt 10 K/W 400 0.0 600 A/µs 800 1000 diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF /dt Constants for ZthJC calculation: 1 ZthJC 0.1 i Rthi (K/W) ti (s) 1 2 3 4 0.78545 0.30245 0.0621 1.15 0.0052 0.0003 0.0004 0.0092 0.01 FUE 30-12N1 0.001 0.0001 0.001 0.01 0.1 s 1 10 t IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved 0548 Fig. 7 Transient thermal resistance junction to case 3-3