HiPerFETTM Power MOSFET VDSS IXFE 55N50 IXFE 50N50 Single Die MOSFET ID25 RDS(on) Ω 80 mΩ Ω 100 mΩ 500 V 52 A 500 V 47 A trr ≤ 250 ns Preliminary data sheet ISOPLUS 227TM (IXFE) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 500 500 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C 47 53 200 220 A A A A 55N50 50N50 55N50 50N50 IDM T C = 25°C; Note 1 IAR TC = 25°C 55 A EAR TC = 25°C 60 mJ dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω 5 V/ns PD TC = 25°C 500 W -55 ... +150 150 -55 ... +150 °C °C °C 2500 3000 V~ V~ TJ TJM Tstg VISOL 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s Md Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. Weight 19 g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Min. VDSS VGS = 0 V, ID = 3mA 500 VGS(th) VDS = VGS, ID = 8mA 2.5 IGSS VGS = ±20V, VGS = 0V IDSS VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C 400 µA 2 mA RDS(on) VGS = 10V, ID = IT Note 2 55N50 50N50 80 m Ω 100 m Ω © 2002 IXYS All rights reserved Characteristic Values Typ. Max. V 4.5 V ±100 nA S G S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features • Low cost direct-copper bonded aluminium package • Encapsulating epoxy meets UL 94 V-0, flammability classification • 2500V isolation • Low drain to case capacitance • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance • Fast intrinsic Rectifier • Conforms to SOT-227B outline Applications • DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • Temperature and lighting controls Advantages • Easy to mount • Space savings • High power density 98904 (2/02) IXFE 55N50 IXFE 50N50 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. 45 S 9400 pF 1200 pF Crss 460 pF td(on) 45 ns gfs VDS = 10 V; ID = IT, Note 2 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 • VDSS, ID = IT td(off) RG = 1 Ω (External), 60 ns 120 ns 45 ns 330 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = IT Qgd 55 nC 185 nC RthJC 0.25 RthCK 0.07 Source-Drain Diode (TJ = 25°C, unless otherwise specified) Symbol Test Conditions K/W K/W Characteristic Values Min. Typ. Max. IS VGS = 0 55N50 50N50 55 50 A A ISM Repetitive; pulse width limited by TJM 55N50 50N50 220 200 A A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.3 V t rr I F = IS, -di/dt = 100 A/µs, V R = 100 V TJ = 25°C TJ = 25°C TJ = 25°C QRM IRM ISOPLUS-227 B 180 30 2 8 ns ns µC A Please see IXFN55N50 data sheet for characteristic curves. Notes: 1. Pulse width limited by TJM. 2. Pulse test, t ≤ 300 ms, duty cycle d ≤ 2%. 3. IT Test current: IXFE55N50: IT = 27.5 A IXFE50N50: IT = 25 A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1