HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 21N100Q (Electrically Isolated Back Surface) VDSS ID25 RDS(on) = 1000 V = 19 A = 0.50 W trr £ 250 ns N-Channel Enhancement Mode, Low Qg, High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW VGS VGSM Continuous Transient ID25 ID(RMS) IDM IAR 1000 1000 V V ±20 ±30 V V TC = 25°C (MOSFET chip capability) External lead (current limit) TC = 25°C, Note 1 TC = 25°C 19 84 21 21 A A A A EAR EAS TC = 25°C TC = 25°C 60 2.3 mJ J dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS T J £ 150°C, RG = 2 W 5 V/ns PD TC = 25°C TJ TJM Tstg TL 1.6 mm (0.063 in.) from case for 10 s VISOL 50/60 Hz, RMS 400 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C 2500 V~ 5 g t = 1 min Weight Symbol Test Conditions VDSS VGS = 0 V, ID = 250mA VGS(th) VDS = VGS, ID = 8mA IGSS VGS = ±20 V, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 V 2.5 4.5 V ±100 nA TJ = 125°C VGS = 10 V, ID = IT Notes 2, 3 IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved 100 mA 2 mA 0.5 W ISOPLUS 247TM E153432 Isolated backside* G = Gate S = Source D = Drain * Patent pending Features • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • Low drain to tab capacitance(<30pF) • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Rated for Unclamped Inductive Load Switching (UIS) • Fast intrinsic Rectifier Applications • DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • AC motor control Advantages • Easy assembly • Space savings • High power density 98723 (05/24/00) 1-2 IXFR 21N100Q Symbol Test Conditions gfs VDS = 10 V; ID = IT Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Notes 2, 3 C iss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss td(on) 16 22 S 5900 pF 550 pF 90 pF 21 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = IT 18 ns td(off) RG = 1 W (External), Notes 2, 3 60 ns 12 ns 170 nC 38 nC 75 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = IT Notes 2, 3 Qgd RthJC 0.30 RthCK 0.15 Source-Drain Diode K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 24 A ISM Repetitive; Note 1 96 A VSD IF = IT, VGS = 0 V, Notes 2, 3 1.5 V 250 ns t rr QRM IF = 50A,-di/dt = 100 A/ms, VR = 100 V IRM 1.0 mC 8 A ISOPLUS 247 (IXFR) OUTLINE 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection Dim. Millimeter Min. Max. A 4.83 5.21 A1 2.29 2.54 A2 1.91 2.16 b 1.14 1.40 1.91 2.13 b1 b2 2.92 3.12 C 0.61 0.80 D 20.80 21.34 E 15.75 16.13 e 5.45 BSC L 19.81 20.32 L1 3.81 4.32 Q 5.59 6.20 R 4.32 4.83 S 13.21 13.72 T 15.75 16.26 U 1.65 3.03 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 .520 .540 .620 .640 .065 .080 Note: 1. Pulse width limited by TJM 2. Pulse test, t £ 300 ms, duty cycle d £ 2 % 3. IT = 10.5A © 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2