PolarHVTM HiPerFET Power MOSFET IXFR 44N80P VDSS ID25 RDS(on) Electrically Isolated Tab trr = 800 V = 25 A Ω ≤ 190 mΩ ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 800 800 V V VGS VGSM Continuous Transient ± 30 ± 40 V V ID25 IDM TC = 25°C TC = 25°C, pulse width limited by TJM 25 100 A A IAR EAR EAS TC = 25°C TC = 25°C TC = 25°C 25 80 3.4 A mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω 10 V/ns PD Maximum Ratings ISOPLUS247 (IXFR) E153432 Isolated Tab G = Gate S = Source Features z TC = 25°C 300 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 2500 V~ 20..120 /4.5..25 N/lb 5 g TJ TJM Tstg z z TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds VISOL 50/60 Hz, RMS, 1 minute FC Mounting force z z z Weight z Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 800 μA 800 VGS(th) VDS = VGS, ID = 8 mA 3.0 IGSS VGS = ± 30 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = IT, Note 1 TJ = 125°C V 5.0 V ± 200 nA 50 1.5 μA mA 200 mΩ Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(<30pF) Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Fast intrinsic Rectifier Applications z Symbol Test Conditions (TJ = 25°C unless otherwise specified) D = Drain z z z DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Advantages z z z Easy assembly Space savings High power density DS99504E(06/06) © 2006 IXYS All rights reserved IXFR 44N80P Symbol Test Conditions gfs VDS= 20 V; ID = IT, Note 1 Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. 27 Ciss 43 S 12 nF 910 pF Crss 30 pF td(on) 28 ns Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 VDSS, ID = 44 A 22 ns td(off) RG = 1 Ω (External) 75 ns 27 ns 200 nC 67 nC 65 nC tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = IT Qgd ISOPLUS247 (IXFR) Outline 0.42 °C/W RthJC RthCS °C/W 0.15 Source-Drain Diode Characteristic Values TJ = 25°C unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 44 A ISM Repetitive 100 A VSD IF = IS, VGS = 0 V, Note 1 1.5 V trr IF = 22 A, -di/dt = 100 A/μs 250 ns QRM VR = 100 V, VGS = 0 V IRM 0.8 μC 8.0 A Notes: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %; 2. Test current IT = 22 A. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734 B2 6,759,692 6,771,478 B2 IXFR 44N80P Fig. 1. Output Characte r is tics Fig. 2. Exte nde d Output Characte ris tics @ 25° C @ 25° C 100 45 V GS = 10V 40 7V 80 35 70 6V 30 I D - Amperes I D - Amperes V GS = 10V 90 7V 25 20 15 5V 60 6V 50 40 30 10 20 5 10 5V 0 0 0 1 2 3 4 5 6 7 0 8 3 6 9 V D S - V olts 18 21 24 27 30 Fig. 4. RDS(on ) Nor m alize d to ID = 22A V alue vs . Junction Te m pe rature @ 125° C 2.6 45 V GS = 10V 40 2.4 V GS = 10V 7V R D S ( o n ) - Normalized 35 6V I D - Amperes 15 V D S - V olts Fig. 3. Output Characte r is tics 30 25 20 5V 15 10 5 2.2 2.0 1.8 I D = 44A 1.6 I D = 22A 1.4 1.2 1.0 0.8 0.6 0 0 2 4 6 8 10 12 14 -50 16 -25 V D S - V olts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig . 6. Dr ain Cur r e n t vs . Cas e Te m p e r atu r e Fig. 5. RDS(on) Nor m alize d to ID = 22A V alue vs . Drain Curr e nt 28 2.4 V GS = 10V 2.2 TJ = 125 ° C 24 2 20 I D - Amperes R D S ( o n ) - Normalized 12 1.8 1.6 1.4 16 12 8 1.2 TJ = 25 ° C 4 1 0 0.8 0 10 20 30 40 50 60 I D - A mperes © 2006 IXYS All rights reserved 70 80 90 100 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXFR 44N80P Fig. 8. Transconductance Fig. 7. Input Adm ittance 70 90 80 60 TJ = - 40° C 70 g f s - Siemens I D - Amperes 50 TJ = 125°C 40 25° C - 40° C 30 25°C 60 125°C 50 40 30 20 20 10 10 0 0 3.5 4 4.5 5 5.5 6 0 6.5 10 20 30 V G S - Volts 50 60 70 80 150 175 200 I D - Amperes Fig. 9. Source Current vs. Source-To-Drain Voltage Fig. 10. Gate Charge 10 140 9 VDS = 400V 8 I D = 22A 7 I G = 10mA 120 VG S - Volts 100 I S - Amperes 40 80 60 40 6 5 4 3 TJ = 125°C 2 TJ = 25°C 20 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0 25 V S D - Volts 50 75 100 125 Q G - NanoCoulombs Fig. 11. Capacitance Fig. 12. Maximum Transient Thermal Resistance 100000 1.00 C iss 10000 R( t h ) J C - ºC / W Capacitance - PicoFarads f = 1MHz C oss 1000 100 0.10 C rss 10 0.01 0 5 10 15 20 25 30 35 40 V DS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.001 0.01 0.1 Pulse Width - Seconds 1 10