IXFH 32N50Q IXFT 32N50Q HiPerFETTM Power MOSFETs Q-Class VDSS trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C TC = 25°C; pulse width limited by TJM TC = 25°C 32 128 32 A A A EAR EAS TC = 25°C 45 1500 mJ mJ dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω 5 V/ns PD TC = 25°C 416 W -55 ... + 150 150 -55 ... + 150 °C °C °C 300 °C 1.13/10 Nm/lb.in. 6 4 g g TJ TJM Tstg 1.6 mm (0.063 in) from case for 10 s Md Mounting torque Weight TO-247 TO-268 TO-247 AD (IXFH) (TAB) TO-268 (D3) ( IXFT) G G = Gate S = Source z Test Conditions VDSS VGS = 0 V, ID = 250 uA VGS(th) VDS = VGS, ID = 4 mA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Note 1 © 2004 IXYS All rights reserved Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 z z z V z 2.5 TJ = 25°C TJ = 125°C 4.5 V ±100 nA 100 1 µA mA 0.16 Ω S (TAB) D = Drain TAB = Drain Features z Symbol RDS(on) 500 V 32 A 0.16 Ω 500 V 32 A 0.16 Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt TL ID25 IXYS advanced low Qg process Low gate charge and capacitances - easier to drive - faster switching International standard packages Low RDS (on) Unclamped Inductive Switching (UIS) rated Molding epoxies meet UL 94 V-0 flammability classification Advantages z z z Easy to mount Space savings High power density DS98596E(02/04) IXFH 32N50Q IXFT 32N50Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25, Note 1 18 Ciss Coss 28 S 3950 4925 VGS = 0 V, VDS = 25 V, f = 1 MHz pF 640 800 pF Crss 210 260 pF td(on) 35 45 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 42 50 ns td(off) RG = 2 Ω (External), 75 95 ns 20 25 ns 153 190 nC 26 32 nC 85 105 0.30 tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC RthCK (TO-247) Source-Drain Diode 0.25 Test Conditions IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Note 1 trr QRM IRM IF = IS, -di/dt = 100 A/µs, VR = 100 V 0.75 7.5 1 Dim. 2 3 Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain Millimeter Min. Max. Inches Min. Max. A A1 A2 4.7 2.2 2.2 5.3 2.54 2.6 .185 .087 .059 .209 .102 .098 nC b b1 b2 1.0 1.65 2.87 1.4 2.13 3.12 .040 .065 .113 .055 .084 .123 K/W C D E .4 20.80 15.75 .8 21.46 16.26 .016 .819 .610 .031 .845 .640 e L L1 5.20 19.81 5.72 20.32 4.50 0.205 .780 0.225 .800 .177 ∅P Q 3.55 5.89 3.65 6.40 .140 0.232 .144 0.252 R S 4.32 6.15 5.49 BSC .170 242 .216 BSC K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol TO-247 AD (IXFH) Outline 32 A 128 A 1.5 V 250 ns µC A TO-268 Outline Note 1: Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505 IXFH 32N50Q IXFT 32N50Q Figure 1. Output Characteristics at 25OC 80 TJ = 125OC 6V 50 40 30 20 30 5V 20 4V 0 4 8 12 16 0 20 0 4 8 VDS - Volts 16 20 Figure 4. RDS(on) normalized to 15A/25OC vs. TJ 2.8 2.8 VGS = 10V VGS = 10V 2.4 RDS(ON) - Normalized RDS(ON) - Normalized 12 VDS - Volts Figure 3. RDS(on) normalized to 15A/25OC vs. ID Tj=1250 C 2.0 1.6 Tj=250 C 1.2 0.8 6V 10 5V 10 0 VGS= 9V 8V 7V 40 ID - Amperes 60 ID - Amperes 50 VGS=10V 9V 8V 7V TJ = 25OC 70 Figure 2. Output Characteristics at 125OC 0 10 20 30 40 50 2.4 ID = 32A 2.0 1.2 0.8 25 60 ID = 16A 1.6 50 75 100 125 150 TJ - Degrees C ID - Amperes Figure 5. Drain Current vs. Case Temperature Figure 6. Admittance Curves 40 50 IXF_32N50Q 24 40 IXF_30N50Q ID - Amperes ID - Amperes 32 16 8 0 -50 30 20 10 -25 0 25 50 75 TC - Degrees C © 2004 IXYS All rights reserved 100 125 150 0 TJ = 25oC TJ = 125oC 2 3 4 VGS - Volts 5 6 IXFH 32N50Q IXFT 32N50Q Figure 7. Gate Charge Figure 8. Capacitance Curves 14 10000 Vds=300V ID=16A IG=10mA VGS - Volts 10 F = 1MHz Ciss Capacitance - pF 12 8 6 4 Coss 1000 Crss 2 0 0 50 100 150 200 100 250 Gate Charge - nC 0 5 10 15 20 25 VDS - Volts Figure 9. Forward Voltage Drop of the Intrinsic Diode 100 VGS= 0V ID - Amperes 80 60 TJ=125OC 40 20 TJ=25OC 0 0.4 0.6 0.8 1.0 1.2 VSD - Volts Figure 10. Transient Thermal Resistance 0.40 R(th)JC - K/W 0.20 0.10 0.08 0.06 0.04 0.02 0.01 -3 10-2 IXYS reserves10 the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 10-1 100 101 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505