PolarHTTM HiPerFET Power MOSFET IXFH 74N20P IXFV 74N20P IXFV 74N20PS VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Fast Recovery Diode, Avalanche Rated = = = ≤ 200 74 34 200 V A Ω mΩ ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 200 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ 200 V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C 74 A IDM TC = 25°C, pulse width limited by TJM 200 A IAR TC = 25°C 60 A EAR TC = 25°C 40 mJ EAS TC = 25°C 1.0 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 10 V/ns 480 W -55 ... +175 175 -55 ... +150 °C °C °C 300 250 °C °C TO-247 (IXFH) G D G TC = 25°C TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s FC Mounting Force (PLUS220) 1.13/10 Nm/lb.in. Md Mounting torque (TO-247) 1.13/10 Nm/lb.in. Weight TO-247 PLUS220 6.0 4.0 g g S PLUS220 (IXFV) TJ ≤ 150°C, RG = 4 Ω PD D (TAB) D D (TAB) S PLUS220SMD (IXFV-PS) G S G = Gate S = Source D (TAB) D = Drain TAB = Drain Features Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. VDSS VGS = 0 V, ID = 250 µA 200 VGS(th) VDS = VGS, ID = 250µA 2.5 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) TJ = 125°C VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2004 IXYS All rights reserved z z V 5.0 V ±100 nA 25 250 µA µA 34 mΩ z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z Easy to mount Space savings High power density DS99209(09/04) IXFH 74N20P IXFV 74N20P IXFV 74N20PS Symbol Test Conditions gfs Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. VDS= 10 V; ID = 0.5 ID25, pulse test 30 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss td(on) 44 S 3300 pF 800 pF 190 pF 23 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 21 ns td(off) RG = 4 Ω (External) 60 ns 21 ns 107 nC 24 nC 52 nC tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC TO-247 (IXFH) Outline 1 (TO-247, PLUS220) 0.21 Source-Drain Diode Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC K/W Characteristic Values (TJ = 25°C, unless otherwise specified) Min. typ. Max. Symbol Test Conditions IS VGS = 0 V 74 A ISM Repetitive 180 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V t rr IF = 25 A, -di/dt = 100 A/µs 120 VR = 100 V QRM µC 6 A 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC PLUS220 (IXFV) Outline E E1 A A1 L2 200 ns 0.4 IRM 3 Terminals: 1 - Gate 0.31 K/W RthCK 2 E1 D1 D L3 L1 PLUS220SMD (IXFV-PS) Outline E E1 A A1 L2 L E1 2X e 3X b c A2 Terminals: 1-Gate 2-Drain D A A1 A2 A3 b c D D1 E E1 e L L1 L2 L3 L4 A3 L3 L4 L L1 2X b e c A2 Terminals: 1-Gate 2-Drain A A1 A2 b c D D1 E E1 e L L1 L2 L3 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 IXFH 74N20P IXFV 74N20P IXFV 74N20PS Fig. 2. Extended Output Characteristics @ 25ºC Fig. 1. Output Characteristics @ 25ºC 200 80 VGS = 10V 70 9V 160 140 50 I D - Amperes I D - Amperes 60 VGS = 10V 180 9V 8V 7V 40 30 6V 20 8V 120 7V 100 80 60 6V 40 10 5V 20 5V 0 0 0 0.5 1 1.5 2 2.5 3 0 3.5 2 4 6 Fig. 3. Output Characteristics @ 150ºC 12 14 16 18 20 3 VGS = 10V 70 VGS = 10V 9V 8V 2.6 R D S ( o n ) - Normalized 60 I D - Amperes 10 Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature 80 7V 50 40 6V 30 20 2.2 I D = 74A 1.8 I D = 37A 1.4 1 5V 10 0 0.6 0 1 2 3 4 5 6 -50 7 -25 0 V D S - Volts 0.5 ID25 Value vs. ID 5 75 100 125 150 175 70 4 60 3 VGS = 10V 2.5 2 VGS = 15V I D - Amperes TJ = 175ºC 3.5 1.5 50 Fig. 6. Drain Current vs. Case Tem perature 80 VGS = 10V 4.5 25 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to R D S ( o n ) - Normalized 8 V D S - Volts V D S - Volts 50 40 30 20 1 TJ = 25ºC 10 0 0.5 0 20 40 60 80 100 120 140 160 180 200 I D - Amperes © 2004 IXYS All rights reserved -50 -25 0 25 50 75 100 125 TC - Degrees Centigrade 150 175 IXFH 74N20P IXFV 74N20P IXFV 74N20PS Fig. 8. Transconductance Fig. 7. Input Adm ittance 60 100 90 50 80 60 50 40 30 TJ = 150ºC 20 25ºC -40ºC TJ = -40ºC 40 g f s - Siemens I D - Amperes 70 25ºC 150ºC 30 20 10 10 0 0 3.5 4 4.5 5 5.5 6 6.5 0 7 20 40 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 160 140 VG S - Volts I S - Amperes 100 120 Fig. 10. Gate Charge 180 120 100 80 9 VDS = 100V 8 I D = 37A 7 I G = 10mA 6 5 4 3 TJ = 150ºC 40 2 TJ = 25ºC 1 20 0 0 0.4 0.6 0.8 1 V S D - Volts 1.2 0 1.4 10 20 30 40 50 60 70 80 90 100 110 Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area Fig. 11. Capacitance 10000 1000 f = 1MHz TJ = 175ºC C iss R DS(on) Limit I D - Amperes Capacitance - picoFarads 80 10 200 60 60 I D - Amperes C oss 1000 TC = 25ºC 25µs 100 100µs 1ms 10ms 10 DC C rss 100 1 0 5 10 15 20 25 V D S - Volts 30 35 40 IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 V D S - Volts 1000 IXFH 74N20P IXFV 74N20P IXFV 74N20PS Fig . 13. M axim u m T r an s ie n t T h e r m al Re s is tan ce R( t h ) J C - ºC / W 1.00 0.10 0.01 1 10 100 Puls e W idth - millis ec onds © 2004 IXYS All rights reserved 1000