HiPerFASTTM IGBT VCES IC25 VCE(sat) tfi IXGA 7N60B IXGP 7N60B Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 14 A IC90 TC = 90°C 7 A ICM TC = 25°C, 1 ms 30 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 22 Ω Clamped inductive load, L = 300 µH PC TC = 25°C = 600 V = 14 A = 2 V = 150 ns TO-220AB (IXGP) G CE TO-263 AA (IXGA) G ICM = 14 @ 0.8 VCES 54 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C TJ Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Μ3 Μ3.5 Md Mounting torque, (TO-220) 0.45/4 0.55/5 Weight TO-220 TO-263 Symbol Test Conditions BVCES IC = 250 µA, VGE = 0 V 600 VGE(th) IC = 250 µA, VCE = VGE 2.5 ICES VCE = 0.8 VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC E A Nm/lb.in. 4 2 g g G = Gate, E = Emitter, C (TAB) C = Collector, TAB = Collector Features • International standard packages JEDEC TO-263 surface mountable and JEDEC TO-220 AB • Medium frequency IGBT • High current handling capability • HiPerFASTTM HDMOSTM process • MOS Gate turn-on - drive simplicity Applications = IC90, VGE = 15 V © 2002 IXYS All rights reserved Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. V TJ = 25°C TJ = 125°C 1.8 5.5 V 100 500 µA µA ±100 nA 2.0 V • Uninterruptible power supplies (UPS) • Switched-mode and resonant-mode power supplies • AC motor speed control • DC servo and robot drives • DC choppers Advantages • High power density • Suitable for surface mounting • Very low switching losses for high frequency applications 98563A (06/02) IXGA 7N60B IXGP 7N60B Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % Cies 3 7 S 500 pF 50 pF Cres 17 pF Qg 25 nC 5 nC 10 nC Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) tri Eon td(off) tfi Eoff 9 ns 10 ns 0.07 mJ Inductive load, TJ = 25°C IC = IC90, VGE = 15 V, L = 300 µH, VCE = 0.8 VCES, RG = Roff = 22 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG 100 200 ns 150 250 ns 0.3 0.6 mJ td(on) Inductive load, TJ = 125°C 10 ns tri IC = IC90, VGE = 15 V, L = 300 µH 15 ns Eon VCE = 0.8 VCES, RG = Roff = 22 Ω 0.15 mJ Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG 200 ns 250 ns 0.6 mJ (TO-220) 0.25 td(off) tfi Eoff Pins: 2 - Collector 4 - Collector Dim. A B C D E F G H J K M N Q R Millimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 1 - Gate 3 - Emitter Bottom Side Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 TO-263 AA Outline 2.3 K/W RthJC RthCK TO-220 AB Outline K/W 1. 2. 3. 4. Min. Recommended Footprint (Dimensions in inches and mm) Gate Collector Emitter Collector Bottom Side Dim. Millimeter Min. Max. Inches Min. Max. A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 7.11 9.65 8.13 .340 .280 .380 .320 E E1 e 9.65 6.86 2.54 10.29 8.13 BSC .380 .270 .100 .405 .320 BSC L L1 L2 L3 L4 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.38 .575 .090 .040 .050 0 .625 .110 .055 .070 .015 R 0.46 0.74 .018 .029 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1