IXYS IXGH12N60BD1

HiPerFASTTM IGBT
IXGH 12N60BD1
VDSS
ID25
VCE(sat)
tfi(typ)
= 600 V
= 24 A
= 2.1 V
= 120 ns
Preliminary data
Symbol
Test Conditions
Maximum Ratings
VCES
T J = 25°C to 150°C
600
V
VCGR
T J = 25°C to 150°C; RGE = 1 MW
600
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C
24
A
IC90
TC = 90°C
12
A
ICM
TC = 25°C, 1 ms
48
A
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 33 W
Clamped inductive load, L = 300 mH
ICM = 24
@ 0.8 VCES
A
PC
TC = 25°C
100
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
TJ
Md
Mounting torque with screw M3
Mounting torque with screw M3.5
TO-247 AD
C (TAB)
G
C
E
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
0.45/4 Nm/lb.in.
0.55/5 Nm/lb.in.
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
6
g
300
°C
Features
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BVCES
IC
= 250 mA, VGE = 0 V
600
VGE(th)
IC
= 250 mA, VGE = VGE
2.5
ICES
VCE = 0.8 • VCES
VGE = 0 V
IGES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC
TJ = 25°C
TJ = 125°C
= ICE90, VGE = 15 V
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
V
5.0
V
200
1.5
mA
mA
±100
nA
2.1
V
• Moderate frequency IGBT
• New generation HDMOSTM process
• International standard package
JEDEC TO-247
• High peak current handling capability
and antiparallel diode in one package
Applications
•
•
•
•
PFC circuit
AC motor speed control
DC servo and robot drives
Switch-mode and resonant-mode
power supplies
98600B (7/00)
1-2
IXGH 12N60BD1
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
IC = IC90; VCE = 10 V,
Pulse test, t £ 300 ms, duty cycle £ 2 %
C ies
11
S
860
pF
100
pF
C res
15
pF
Qg
32
nC
10
nC
10
nC
Coes
Qge
VCE = 25 V, VGE = 0 V, f = 1 MHz
5
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Qgc
td(on)
Inductive load, TJ = 25°C
20
ns
t ri
IC = IC90, VGE = 15 V, L = 300 mH
VCE = 0.8 • VCES, RG = Roff = 18 W
20
ns
td(off)
tfi
Eoff
td(on)
t ri
Eon
td(off)
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V, L = 300 mH
VCE = 0.8 • VCES, RG = Roff = 18 W
Eoff
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
RthJC
IGBT
tfi
Symbol
VF
250
ns
A
B
19.81 20.32
20.80 21.46
0.780 0.800
0.819 0.845
120
270
ns
0.5
0.8
mJ
C
D
15.75 16.26
3.55 3.65
0.610 0.640
0.140 0.144
E
F
4.32 5.49
5.4
6.2
0.170 0.216
0.212 0.244
G
H
1.65 2.13
4.5
0.065 0.084
0.177
J
K
1.0
1.4
10.8 11.0
0.040 0.055
0.426 0.433
20
ns
20
ns
0.5
mJ
200
ns
200
ns
L
M
4.7
0.4
5.3
0.8
0.185 0.209
0.016 0.031
0.8
mJ
N
1.5 2.49
0.087 0.102
I F = 15A; T VJ = 150°C
T VJ = 25°C
1.3
V R = 100 V; I F =25A; -di F /dt = 100 A/ms
L < 0.05 mH; T VJ = 100°C
t rr
IF = 1 A; -di/dt = 50 A/ms;
VR = 30 V TJ = 25°C
Diode
© 2000 IXYS All rights reserved
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IRM
RthJC
Inches
Min. Max.
150
0.25
Test Conditions
Dim. Millimeter
Min. Max.
1.25 K/W
RthCK
Reverse Diode (FRED)
TO-247 AD (IXGH) Outline
2
35
2.5
V
V
2.5
A
ns
1.6 K/W
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
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