Advance Technical Data HiPerFASTTM IGBT VCES IC25 VCE(sat) tfi typ IXGH 30N60B2 IXGT 30N60B2 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C (limited by leads) 70 A IC110 TC = 110°C 30 A ICM TC = 25°C, 1 ms 150 A SSOA (RBSOA) PC VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ ≤ 600 V TC = 25°C ICM = 60 A 190 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C TJ Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque (M3) Weight TO-247 AD TO-268 SMD TO-268 (IXGT) G E C (TAB) C G = Gate, E = Emitter, E C = Collector, TAB = Collector Features z z z z 6 4 C (TAB) TO-247 AD (IXGH) G 1.13/10 Nm/lb.in. = 600 V = 70 A < 1.8 V = 82 ns g g Medium frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity Applications z Symbol VGE(th) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. = 250 µA, VCE = VGE IC ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = 24 A, VGE = 15 V © 2003 IXYS All rights reserved 2.5 TJ = 25°C TJ = 150°C TJ = 25°C 5.0 z z z z V z 50 1 µA mA ±100 nA 1.8 V PFC circuits Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers DS99122(11/03) IXGH 30N60B2 IXGT 30N60B2 Symbol gfs Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. IC = 24 A; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % Cies Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 18 26 S 1500 pF 115 pF 40 pF 66 nC 9 nC 22 nC 13 ns 15 ns ∅P Cres Qg Qge IC = 24 A, VGE = 15 V, VCE = 300 V Qgc td(on) tri Inductive load, TJ = 25°°C td(off) IC = 24 A, VGE = 15 V VCE = 400 V, RG = 5 Ω tfi Eoff 110 200 ns 82 150 ns 0.32 0.6 mJ 13 ns td(on) tri Eon td(off) tfi Inductive load, TJ = 125°°C IC = 24 A, VGE = 15 V VCE = 400 V, RG = 5 Ω Eoff 17 ns 0.22 mJ 200 ns 150 ns 0.9 mJ RthJC RthCK TO-247 AD Outline e Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 2.2 2.6 A2 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline 0.65 K/W (TO-247) 0.25 K/W Min. Recommended Footprint (Dimensions in inches and mm) IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505 IXGH 30N60B2 IXGT 30N60B2 Fig. 1. Output Characteristics @ 25 Deg. C Fig. 2. Extended Output Characteristics @ 25 deg. C 300 50 VGE = 15V 13V 11V 45 40 9V I C - Amperes I C - Amperes 35 30 7V 25 20 15 VGE = 15V 250 13V 200 11V 150 9V 100 7V 10 50 5 5V 5V 0 0 0.5 1 1.5 2 2.5 0 3 2 4 6 12 14 16 18 1.3 50 VGE = 15V 13V 11V 40 35 7V 30 25 20 15 5V 10 I C = 48A 1.2 9V V C E (sat)- Normalized 45 V GE = 15V 1.1 1.0 I C = 24A 0.9 0.8 5 I C = 12A 0.7 0 0.5 1 1.5 2 2.5 -50 3 -25 0 25 50 75 100 125 150 12 13 TJ - Degrees Centigrade V CE - Volts Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage Fig. 6. Input Adm ittance 250 4.2 TJ = 25ºC 3.9 225 TJ = -40ºC 25ºC 125ºC 200 3.6 3.3 I C = 48A 24A 12A 3 2.7 I C - Amperes VC E - Volts 10 Fig. 4. Dependence of V CE(sat) on Tem perature Fig. 3. Output Characteristics @ 125 Deg. C I C - Amperes 8 V C E - Volts V C E - Volts 2.4 175 150 125 100 2.1 75 1.8 50 1.5 25 1.2 0 5 6 7 8 9 10 11 12 13 14 15 16 17 V G E - Volts © 2003 IXYS All rights reserved 4 5 6 7 8 9 V G E - Volts 10 11 IXGH 30N60B2 IXGT 30N60B2 Fig. 8. Dependence of Turn-Off Energy on RG Fig. 7. Transconductance 45 2.7 TJ = -40ºC 25ºC 125ºC 40 2.1 30 E off - milliJoules g f s - Siemens 35 2.4 25 20 15 1.8 TJ = 125ºC VGE = 15V VCE = 400V 1.5 1.2 0.9 10 0.6 5 0.3 0 I C = 48A I C = 24A I C = 12A 0 0 25 50 75 100 125 150 175 200 225 250 0 10 20 30 I C - Amperes 2 60 70 80 2 R G = 5Ω VGE = 15V VCE = 400V 1.8 1.6 1.6 1.4 1.2 TJ = 125ºC 1 0.8 0.6 TJ = 25ºC 0.4 1.2 1 0.6 0.4 0 0 20 25 30 35 40 I C = 24A 0.8 0.2 15 I C = 48A 1.4 0.2 10 R G = 5Ω VGE = 15V VCE = 400V 1.8 E off - milliJoules E off - MilliJoules 50 Fig. 10. Dependence of Turn-Off Energy on Tem perature Fig. 9. Dependence of Turn-Off Energy on IC 45 50 I C = 12A 25 35 I C - Amperes 45 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade Fig. 11. Dependence of Turn-Off Sw itching Tim e on RG Fig. 12. Dependence of Turn-Off Sw itching Tim e on IC 260 700 td(off) tfi - - - - - - 600 TJ = 125ºC VGE = 15V VCE = 400V 500 400 I C = 12A 300 I C = 24A 200 td(off) tfi - - - - - - 240 Switching Time - nanosecond Switching Time - nanosecond 40 R G - Ohms I C = 48A 100 220 R G = 5Ω VGE = 15V VCE = 400V 200 180 TJ = 125ºC 160 140 120 100 TJ = 25ºC 80 60 0 10 20 30 40 50 60 70 80 R G - Ohms 10 15 20 25 30 35 I C - Amperes 40 45 50 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505 IXGH 30N60B2 IXGT 30N60B2 Fig. 13. Dependence of Turn-Off Sw itching Tim e on Tem perature Fig. 14. Gate Charge 15 200 td(off) tfi - - - - - - 180 R G = 5Ω VGE = 15V VCE = 400V I C = 12A 24A 48A VCE = 300V I C = 24A I G = 10mA 12 VG E - Volts Switching Time - nanosecond 220 160 140 9 6 120 I C = 48A 24A 12A 100 3 80 0 25 35 45 55 65 75 85 95 TJ - Degrees Centigrade 105 115 125 0 10 20 30 40 50 60 70 Q G - nanoCoulombs Fig. 15. Capacitance 10000 Capacitance - p F f = 1 MHz C ies 1000 C oes 100 C res 10 0 5 10 15 20 25 V C E - Volts 30 35 40 Fig. 16. Maxim um Transient Therm al Resistance R (th) J C - (ºC/W) 1.0 0.5 0.1 1 © 2003 IXYS All rights reserved 10 Pulse Width - milliseconds 100 1000