CoolMOSTM Power MOSFET IXKC 20N60C in ISOPLUS220TM Package Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS(on), Superjunction MOSFET VDSS = 600 V ID25 = 14 A Ω RDS(on) = 190 mΩ Preliminary Data Sheet Symbol Test Conditions ISOPLUS 220LVTM E153432 Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VGS Continuous ±20 V ID25 TC = 25°C; Note 1 14 A ID90 TC = 90°C, Note 1 10 A ID(RMS) Package lead current limit 45 A EAS EAR Io Io 690 1 mJ mJ PD TC = 25°C 125 W = 10A, TC = 25°C = 20A G D G = Gate, S = Source -55 ... +150 °C TJM 150 °C Features Tstg -55 ... +125 °C z 1.6 mm (0.062 in.) from case for 10 s 300 °C VISOL RMS leads-to-tab, 50/60 Hz, t = 1 minute 2500 V~ FC Mounting force 11 ... 65 / 2.4 ...11 N/lb Weight 3 g Isolated back surface* D = Drain, * Patent pending TJ TL S Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z 3RD generation CoolMOS power MOSFET - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) z Low thermal resistance due to reduced chip thickness z Low drain to tab capacitance(<30pF) Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. RDS(on) VGS = 10 V, ID = ID90, Note 3 VGS = 10 V, ID = ID90, Note 3 TJ = 125°C VGS(th) VDS = VGS, ID = 1 mA IDSS VDS = VDSS VGS = 0 V IGSS VGS = ±20 VDC, VDS = 0 160 463 3.5 TJ = 25°C TJ = 125°C 190 mΩ mΩ 5.5 V 1 µA µA 10 ±100 nA Switched Mode Power Supplies (SMPS) Uninterruptible Power Supplies (UPS) z Power Factor Correction (PFC) z Welding z Inductive Heating z z Advantages z z z Easy assembly: no screws or isolation foils required Space savings High power density CooLMOS is a trademark of Infineon Technologies, AG © 2004 IXYS All rights reserved DS98848C(1/04) IXKC 20N60C Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Qg(on) 79 nC 21 nC Qgd 46 nC td(on) 20 ns Qgs VGS = 10 V, VDS = 350 V, ID = 20 A tr VGS = 10 V, VDS = 380V 55 ns td(off) ID = 20 A, RG = 3.3 Ω 60 ns 10 ns tf RthJC 1 RthCH 0.30 Reverse Conduction Symbol Test Conditions VSD IF = 10 A, VGS = 0 V Note 3 TO-220LV Outline K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 0.8 1.2 V Note: 1. MOSFET chip capability 2. Intrinsic diode capability 3. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 6,404,065B1 6,259,123B1 6,162,665 6,306,728B1 6,534,343