Advanced Technical Information PolarHTTM Power MOSFET IXTK 200N10P VDSS ID25 RDS(on) = 100 V = 200 A Ω = 7.5 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ VGSM ID25 TC = 25°C ID(RMS) External lead current limit IDM TC = 25°C, pulse width limited by TJM IAR 100 100 V V ±20 V 200 A 75 A 400 A TC = 25°C 60 A EAR TC = 25°C 100 mJ EAS TC = 25°C 4 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω 10 V/ns PD TC = 25°C 800 W -55 ... +175 175 -55 ... +150 °C °C °C 300 °C 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque 1.13/10 Nm/lb.in. Weight G 10 z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect z Easy to mount Space savings High power density Characteristic Values Min. Typ. Max. VDSS VGS = 0 V, ID = 250 µA 100 VGS(th) VDS = VGS, ID = 500µA 2.5 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 VGS = 15 V, ID = 400A Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2004 IXYS All rights reserved D = Drain TAB = Drain Advantages z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) (TAB) S Features z g D G = Gate S = Source z TJ TJM Tstg TL TO-264(SP) (IXTK) V TJ = 150°C 5.5 5.0 V ±200 nA 25 250 µA µA 7.5 mΩ mΩ PolarHTTM DMOS transistors utilize proprietary designs and process. US patent is pending. DS99186(05/04) IXTK 200N10P Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 0.5 ID25, pulse test 60 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss td(on) tr VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A td(off) RG = 3.3 Ω (External) tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd 97 S 7600 pF 2900 pF 860 pF 30 ns 35 ns 150 ns 90 ns 240 nC 50 nC 135 nC RthJC 0.18 K/W RthCK 0.15 Source-Drain Diode K/W Characteristic Values (TJ = 25°C, unless otherwise specified) Min. typ. Max. Symbol Test Conditions IS VGS = 0 V 200 A ISM Repetitive 400 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V t rr IF = 25 A -di/dt = 100 A/µs VR = 100 V QRM TO-264(SP) Outline (IXTK) 120 ns 3.3 µC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 IXTK 200N10P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 350 200 VGS = 10V 9V 175 VGS = 10V 300 9V 250 125 I D - Amperes I D - Amperes 150 8V 100 75 7V 200 8V 150 7V 100 50 6V 25 50 0 6V 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 0.5 1 1.5 V D S - Volts Fig. 3. Output Characteristics @ 150ºC 3 3.5 4 4.5 5 2.4 VGS = 10V 9V VGS = 10V 2.2 150 R D S ( o n ) - Normalized 175 I D - Amperes 2.5 Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature 200 8V 125 100 7V 75 6V 50 25 2 1.8 I D = 200A 1.6 1.4 I D = 100A 1.2 1 0.8 5V 0 0.6 0 0.5 1 1.5 2 V D S - Volts 2.5 3 3.5 -50 -25 0 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. Drain Current Fig. 6. Drain Current vs. Case Tem perature 80 2.4 2.2 70 TJ 2 = 175ºC 60 1.8 1.6 I D - Amperes R D S ( o n ) - Normalized 2 V D S - Volts VGS = 10V 1.4 VGS = 15V 1.2 50 40 30 20 1 0.8 10 TJ = 25ºC 0 0.6 0 50 100 150 200 I D - Amperes © 2004 IXYS All rights reserved 250 300 350 -50 -25 0 25 50 75 100 125 TC - Degrees Centigrade 150 175 IXTK 200N10P Fig. 8. Transconductance 300 140 250 120 100 200 g f s - Siemens I D - Amperes Fig. 7. Input Adm ittance 150 TJ = -40ºC 100 25ºC 150ºC 50 TJ = -40ºC 25ºC 80 150ºC 60 40 20 0 0 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 0 9 50 100 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 250 300 350 Fig. 10. Gate Charge VDS = 50V 9 300 I D = 100A 8 250 I G = 10mA 7 VG S - Volts I S - Amperes 200 10 350 200 150 100 6 5 4 3 TJ = 150ºC 2 50 TJ = 25ºC 1 0 0 0.4 0.6 0.8 1 V S D - Volts 1.2 1.4 1.6 0 25 50 75 100 125 150 175 200 225 250 Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area Fig. 11. Capacitance 100,000 1000 f = 1MHz TJ = 175ºC R DS(on) Limit C iss 10,000 I D - Amperes Capacitance - picoFarads 150 I D - Amperes C oss C rss 1,000 TC = 25ºC 100µs 100 1ms 10ms DC 100 10 0 5 10 15 20 25 30 35 40 V DS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 1 10 V D S - Volts 100 1000 IXTK 200N10P F ig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e R( t h ) J C - ºC / W 1.00 0.10 0.01 0.00 0.1 1 10 Pu ls e W id th - m illis e c o n d s © 2004 IXYS All rights reserved 100 1000