IXTA 62N15P IXTP 62N15P IXTQ 62N15P PolarHTTM Power MOSFET VDSS ID25 RDS(on) = 150 V = 62 A ≤ 40 mΩ Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 150 150 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM TC = 25° C TC = 25° C, pulse width limited by TJM 62 150 A A IAR TC = 25° C 50 A EAR TC = 25° C 30 mJ EAS TC = 25° C 1.0 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 10 Ω 10 V/ns PD TC = 25° C 350 W -55 ... +175 175 -55 ... +150 °C °C °C TJ TJM Tstg TL TSOLD Md 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-3P / TO-220) Weight TO-3P TO-220 TO-263 G (TAB) TO-220 (IXTP) G g g g G Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 µA 150 VGS(th) VDS = VGS, ID = 250µA 3.0 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) TJ = 150° C VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % © 2006 IXYS All rights reserved V 33 5.5 V ±100 nA 25 250 µA µA 40 mΩ D (TAB) S G = Gate S = Source D = Drain TAB = Drain Features l Symbol Test Conditions (TJ = 25° C, unless otherwise specified) (TAB) D S TO-3P (IXTQ) 300 °C 2600 °C 1.13/10 Nm/lb.in. 5.5 4 3 S l l International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages l l l Easy to mount Space savings High power density DS99154E(12/05) IXTA 62N15P IXTP 62N15P IXTQ 62N15P Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 0.5 ID25, pulse test 14 Ciss Coss 24 S 2250 pF 660 pF 185 pF VGS = 0 V, VDS = 25 V, f = 1 MHz Crss td(on) 27 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 38 ns td(off) RG = 10 Ω (External) 76 ns tf 35 ns Qg(on) 70 nC 20 nC 38 nC Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC RthCS TO-3P (IXTQ) Outline 0.42°C/W (TO-3P) (TO-220) °C/W °C/W 0.21 0.25 Source-Drain Diode Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 62 A ISM Repetitive 150 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V trr QRM IF = 25 A, -di/dt = 100 A/µs VR = 100 V, VGS = 0 V 150 2.0 TO-220 (IXTP) Outline ns µC TO-263 (IXTA) Outline Pins: 1 - Gate 3 - Source 2 - Drain Tab - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXTA 62N15P IXTP 62N15P IXTQ 62N15P Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25ºC VGS = 10V 60 100 50 9V I D - Amperes I D - Amperes @ 25ºC 110 40 8V 30 20 VGS = 10V 80 9V 70 60 8V 50 40 30 7V 10 90 7V 20 6V 10 6V 0 0 0 0.5 1 1.5 2 2.5 3 0 3.5 2 4 6 8 10 12 14 16 18 20 V D S - Volts V D S - Volts Fig. 3. Output Characteristics @ 150ºC Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature 2.8 VGS = 10V 60 2.6 9V R D S ( o n ) - Normalized I D - Amperes 50 40 8V 30 VGS = 10V 2.4 7V 20 6V 2.2 2 I D = 62A 1.8 1.6 1.4 I D = 31A 1.2 1 10 0.8 5V 0 0.6 0 1 2 3 4 5 6 7 -50 V D S - Volts -25 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. ID 4 0 Fig. 6. Drain Current vs. Case Tem perature 70 3.5 60 3 50 I D - Amperes R D S ( o n ) - Normalized TJ = 175ºC 2.5 VGS = 10V 2 30 20 VGS = 15V 1.5 40 1 10 TJ = 25ºC 0 0.5 0 20 40 60 80 100 120 I D - Amperes © 2006 IXYS All rights reserved 140 160 180 -50 -25 0 25 50 75 100 125 TC - Degrees Centigrade 150 175 IXTA 62N15P IXTP 62N15P IXTQ 62N15P Fig. 8. Transconductance Fig. 7. Input Adm ittance 120 36 105 32 28 g f s - Siemens I D - Amperes 90 75 60 45 30 TJ = -40ºC 20 25ºC 150ºC 16 12 8 TJ = 150ºC 25ºC -40ºC 15 24 4 0 0 5 6 7 8 9 10 0 11 15 30 45 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 75 90 105 120 135 150 Fig. 10. Gate Charge 180 10 150 120 VG S - Volts I S - Amperes 60 I D - Amperes 90 60 9 VDS = 75V 8 I D = 31A 7 I G = 10mA 6 5 4 3 TJ = 150ºC 2 30 TJ = 25ºC 1 0 0 0.4 0.6 0.8 1 V S D - Volts 1.2 1.4 0 1.6 10 20 30 40 50 70 Fig. 12. Forw ard-Bias Safe Operating Area Fig. 11. Capacitance 1000 10000 f = 1MHz TJ = 175ºC 1000 TC = 25ºC R DS(on) Limit C iss I D - Amperes Capacitance - picoFarads 60 Q G - nanoCoulombs C oss 100 25µs 100µs 1ms 10 10ms DC C rss 100 1 0 5 10 15 20 25 V D S - Volts 30 35 40 IXYS reserves the right to change limits, test conditions, and dimensions. 1 10 V D S - Volts 100 1000 IXTA 62N15P IXTP 62N15P IXTQ 62N15P Fig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l Re s is t a n c e 0.45 0.40 R ( t h ) J C - ºC / W 0.35 0.30 0.25 0.20 0.15 0.10 0.05 1 10 100 Pu ls e W id th - m illis e c o n d s © 2006 IXYS All rights reserved 1000