IXTQ 96N15P IXTT 96N15P PolarHTTM Power MOSFET VDSS ID25 = 150 V = 96 A Ω = 24 mΩ RDS(on) N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ VGSM 150 150 V V ±20 V 96 75 250 60 A A A A ID25 ID(RMS) IDM IAR TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C EAR EAS TC = 25°C TC = 25°C 40 1.0 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω 10 V/ns PD TC = 25°C 480 W -55 ... +175 175 -55 ... +150 °C °C °C 300 °C TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque Weight TO-3P TO-268 (TO-3P) 1.13/10 Nm/lb.in. TO-3P (IXTQ) G g g (TAB) S TO-268 (IXTT) G G = Gate S = Source S D (TAB) D = Drain TAB = Drain Features z z 5.5 5.0 D z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. z VDSS VGS = 0 V, ID = 250 µA 150 VGS(th) VDS = VGS, ID = 250µA 2.5 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) TJ = 150°C VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2004 IXYS All rights reserved z V 5.0 V ±100 nA 25 250 µA µA 24 mΩ z Easy to mount Space savings High power density PolarHTTM DMOS transistors utilize proprietary designs and process. US patent is pending. DS99131C(05/04) IXTQ 96N15P IXTT 96N15P Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 0.5 ID25, pulse test 35 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 45 S 3500 pF 1000 pF 280 pF C rss td(on) 30 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A 33 ns td(off) RG = 4 Ω (External) 66 ns 18 ns 110 nC 26 nC 59 nC tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC RthCK 0.31 K/W (TO-3P) 0.21 Source-Drain Diode K/W Characteristic Values (TJ = 25°C, unless otherwise specified) Min. typ. Max. Symbol Test Conditions IS VGS = 0 V 96 A ISM Repetitive 250 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V t rr IF = 25 A -di/dt = 100 A/µs VR = 100 V QRM TO-3P (IXTQ) Outline 150 ns 2.0 µC TO-268 Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 IXTQ 96N15P IXTT 96N15P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 200 100 VGS = 10V 9V 90 80 150 I D - Amperes 70 I D - Amperes VGS = 10V 175 60 8V 50 40 7V 30 9V 125 100 8V 75 50 20 6V 10 7V 25 0 6V 0 0 0.5 1 1.5 2 0 2.5 2 4 6 V D S - Volts Fig. 3. Output Characteristics @ 150ºC 12 14 16 18 20 2.8 VGS = 10V 9V 90 2.6 R D S ( o n ) - Normalized 70 60 8V 50 40 7V 30 20 6V 10 VGS = 10V 2.4 80 I D - Amperes 10 Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature 100 2.2 2 1.8 I D = 96A 1.6 I D = 48A 1.4 1.2 1 0.8 5V 0 0.6 0 0.5 1 1.5 2 2.5 3 3.5 V D S - Volts 4 4.5 5 5.5 -50 -25 70 I D - Amperes 2.6 VGS = 10V 1.8 TJ = 25ºC VGS = 15V 1.4 75 100 125 150 175 External Lead Current Limit 60 TJ = 175ºC 2.2 50 80 3.4 3 25 Fig. 6. Drain Current vs. Case Tem perature 0.5 ID25 Value vs. ID 3.8 0 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to R D S ( o n ) - Normalized 8 V D S - Volts 50 40 30 20 10 1 0 0.6 0 50 100 150 I D - Amperes © 2004 IXYS All rights reserved 200 250 -50 -25 0 25 50 75 100 125 TC - Degrees Centigrade 150 175 IXTQ 96N15P IXTT 96N15P Fig. 8. Transconductance Fig. 7. Input Adm ittance 180 140 50 120 g f s - Siemens I D - Amperes TJ = -40ºC 25ºC 150ºC 60 160 100 80 60 40 30 20 TJ = 150ºC 25ºC -40ºC 40 20 10 0 0 4 5 6 7 8 9 10 0 25 50 V G S - Volts 100 125 150 175 200 I D - Amperes Fig. 9. Source Current vs. Source-To-Drain Voltage Fig. 10. Gate Charge 10 300 VDS = 75V 9 250 I D = 48A 8 I G = 10mA 7 200 VG S - Volts I S - Amperes 75 150 100 6 5 4 3 TJ = 150ºC 50 2 1 TJ = 25ºC 0 0 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 V S D - Volts 10 20 30 40 50 60 70 80 Q G - nanoCoulombs 90 100 110 Fig. 12. Forw ard-Bias Safe Operating Area Fig. 11. Capacitance 10000 1000 R DS(on) Limit C iss I D - Amperes Capacitance - picoFarads f = 1MHz 1000 C oss 25µs 100 100µs 1ms 10ms 10 DC TJ = 175ºC C rss TC = 25ºC 100 1 0 5 10 15 20 25 V DS - Volts 30 35 40 IXYS reserves the right to change limits, test conditions, and dimensions. 1 10 V D S - Volts 100 1000 IXTQ 96N15P IXTT 96N15P Fig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l Re s is t a n c e R( t h ) J C - ºC / W 1.00 0.10 0.01 1 10 100 Pu ls e W id th - m illis e c o n d s © 2004 IXYS All rights reserved 1000