IXYS IXTT100N25P

Advanced Technical Information
IXTQ 100N25P
IXTK 100N25P
IXTT 100N25P
PolarHTTM
Power MOSFET
VDSS = 250 V
ID25 = 100 A
Ω
RDS(on) =
27 mΩ
N-Channel Enhancement Mode
TO-3P (IXTQ)
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
VGSM
250
250
V
V
±20
V
100
A
75
A
250
A
60
A
ID25
TC = 25°C
ID(RMS)
External lead current limit
IDM
TC = 25°C, pulse width limited by TJM
IAR
TC = 25°C
EAR
TC = 25°C
60
mJ
EAS
TC = 25°C
2.0
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
10
V/ns
600
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
G
D
(TAB)
S
G = Gate,
S = Source,
D = Drain,
TAB = Drain
TO-268 (IXTT)
G
S
D (TAB)
TO-264(SP) (IXTK)
TJ ≤ 150°C, RG = 4 Ω
PD
TC = 25°C
TJ
TJM
Tstg
TL
1.6 mm (0.062 in.) from case for 10 s
Md
Mounting torque
Weight
TO-3P
TO-264
TO-268
G
°C
300
1.13/10 Nm/lb.in.
5.5
10
5
g
g
g
Characteristic Values
Min. Typ.
Max.
VDSS
VGS = 0 V, ID = 250 µA
250
VGS(th)
VDS = VGS, ID = 250µA
2.5
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
TJ = 125°C
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2004 IXYS All rights reserved
D (TAB)
S
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z
z
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
D
z
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
V
Advantages
5.0
V
±100
nA
z
25
250
µA
µA
z
27
mΩ
z
Easy to mount
Space savings
High power density
PolarHTTM DMOS transistors
utilize proprietary designs and
process. US patent is pending.
DS99118B(07/04)
IXTQ 100N25P IXTT 100N25P
IXTK 100N25P
TO-3P Outline
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS= 10 V; ID = 0.5 ID25, pulse test
40
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
C rss
td(on)
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
td(off)
RG = 3.3 Ω (External)
tf
Qg(on)
Qgs
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
56
S
6300
pF
1150
pF
240
pF
25
ns
26
ns
100
ns
28
ns
185
nC
43
nC
91
nC
RthJC
0.21
TO-3P
0.21
K/W
RthCK
TO-264
0.15
K/W
3
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
typ.
Max.
Symbol
Test Conditions
IS
VGS = 0 V
100
A
ISM
Repetitive
250
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
V
t rr
IF = 25 A
-di/dt = 100 A/µs
VR = 100 V
QRM
2
K/W
RthCK
Source-Drain Diode
1
200
ns
3.0
µC
TO-268 Outline
TO-264 Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343
IXTQ 100N25P IXTT 100N25P
IXTK 100N25P
Fig. 2. Extended Output Characteristics
@ 25ºC
Fig. 1. Output Characteristics
@ 25ºC
250
100
VGS = 10V
9V
8V
90
80
9V
200
175
ID - Amperes
70
ID - Amperes
VGS = 10V
225
60
50
7V
40
30
8V
150
125
100
7V
75
6V
20
50
10
6V
25
5V
0
0
0
0.5
1
1.5
2
2.5
3
3.5
0
2
4
6
Fig. 3. Output Characteristics
@ 125ºC
12
14
16
18
20
2.8
VGS = 10V
9V
8V
80
VGS = 10V
2.6
2.4
RDS(on) - Normalized
90
ID - Amperes
10
Fig. 4. RDS(on) Norm alized to 0.5 ID25
Value vs. Junction Tem perature
100
70
7V
60
50
40
30
6V
2.2
2
1.8
1.4
I D = 50A
1.2
1
10
0.8
5V
I D = 100A
1.6
20
0
0.6
0
1
2
3
4
5
6
-50
7
-25
V DS - Volts
50
75
100
125
150
110
100
VGS = 10V
3.1
25
Fig. 6. Drain Current vs. Case
Tem perature
0.5 ID25 Value vs. ID
3.4
0
TJ - Degrees Centigrade
Fig. 5. RDS(on) Norm alized to
90
2.8
80
2.5
TJ = 125ºC
2.2
1.9
1.6
ID - Amperes
RDS(on) - Normalized
8
V DS - Volts
V DS - Volts
70
60
50
40
30
1.3
TJ = 25ºC
1
20
10
0
0.7
0
25
50
75
100 125 150 175 200 225 250
ID - Amperes
© 2004 IXYS All rights reserved
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
IXTQ 100N25P IXTT 100N25P
IXTK 100N25P
Fig. 8. Transconductance
Fig. 7. Input Adm ittance
90
150
80
125
TJ = -40ºC
25ºC
125ºC
100
75
50
TJ = 125ºC
25ºC
-40ºC
25
60
gfs - Siemens
ID - Amperes
70
50
40
30
20
10
0
0
4
4.5
5
5.5
6
6.5
7
7.5
8
0
25
50
75
V GS - Volts
Fig. 9. Source Current vs.
Source-To-Drain Voltage
125
150
175
200
Fig. 10. Gate Charge
10
300
VDS = 125V
9
250
I D = 50A
8
I G = 10mA
7
200
VG S - Volts
IS - Amperes
100
ID - Amperes
150
100
6
5
4
3
TJ = 125ºC
2
TJ = 25ºC
50
1
0
0
0.4
0.6
0.8
1
1.2
V SD - Volts
1.4
0
20
40
60
80
100 120 140 160 180 200
QG - nanoCoulombs
Fig. 12. Forw ard-Bias
Safe Ope rating Area
Fig. 11. Capacitance
1000
10000
TJ = 150ºC
TC = 25ºC
C iss
ID - Amperes
Capacitance - picoFarads
R DS(on) Limit
1000
C oss
100µs
100
25µs
1ms
10ms
DC
10
f = 1MHz
C rss
1
100
0
5
10
15
20
25
V DS - Volts
30
35
40
IXYS reserves the right to change limits, test conditions, and dimensions.
10
100
V DS - Volts
1000
IXTQ 100N25P IXTT 100N25P
IXTK 100N25P
Fig. 13. Maxim um Transient Therm al Resistance
R(th)JC - ºC/W
1.00
0.10
0.01
1
10
100
Pulse Width - milliseconds
© 2004 IXYS All rights reserved
1000