MIO 1200-33E10 Advanced Technical Information IC80 = 1200 A = 3300 V VCES VCE(sat) typ. = 3.1 V IGBT Module Single switch Short Circuit SOA Capability Square RBSOA C C C E E E C' G E' Features IGBT Symbol Conditions VCES VGE = 0 V Maximum Ratings VGES 3300 V ± 20 V IC80 TC = 80°C 1200 A ICM tp = 1 ms; TC = 80°C 2400 A tSC VCC = 2500 V; VCEM CHIP = < 3300 V; VGE < 15 V; TVJ < 125°C 10 µs • NPT³ IGBT - Low-loss - Smooth switching waveforms for good EMC • Industry standard package - High power density - AISiC base-plate for high power cycling capacity - AIN substrate for low thermal resistance Typical Applications Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VCE(sat) ① IC = 1200 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 240 mA; VCE = VGE ICES VCE = 3300 V; VGE = 0 V; TVJ = 125°C 120 mA IGES VCE = 0 V; VGE = ± 20 V; TVJ = 125°C 500 nA td(on) tr td(off) tf Eon Eoff Inductive load; TVJ = 125°C; VGE = ±15 V; VCC = 1800 V; IC = 1200 A; RG = 1.5 Ω; Lσ = 100 nH 400 200 1070 440 1890 1950 ns ns ns ns mJ mJ Cies Coes Cres VCE = 25 V; VGE = 0 V; f = 1 MHz 187 11.6 2.2 nF nF nF Qge IC = 1200 A; VCE = 1800 V; VGE = ± 15 V 12.1 µC 3.1 3.8 6 RthJC • AC power converters for - industrial drives - windmills - traction • LASER pulse generator V V 8 V 0.0085 K/W IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 417 ① Collector emitter saturation voltage is given at chip level 1-6 Advanced Technical Information MIO 1200-33E10 Diode Symbol Conditions Maximum Ratings IF80 TC = 80°C IFSM VR = 0 V; TVJ = 125°C; tp = 10 ms; half-sinewave Symbol Conditions VF ② IF = 1200 A; IRM trr QRR Erec VCC = 1800 V; IC = 1200 A; VGE = ±15 V; RG = 1.5 Ω; TVJ = 125°C Inductive load; Lσ = 100nH 1200 A 11000 A Characteristic Values min. typ. max. TVJ = 25°C TVJ = 125°C 2.30 2.35 V V 1350 1450 1280 1530 A ns µC mJ RthJC 0.017 K/W ② Forward voltage is given at chip level Module Symbol Conditions Maximum Ratings TJM TVJ Tstg max junction temperature Operating temperature Storage temperature VISOL 50 Hz Md Mounting torque Symbol Conditions dA Clearance distance terminal to base terminal to terminal 23 19 mm mm dS Surface creepage distance terminal to base terminal to terminal 33 33 mm mm Lσ Module stray inductance, C to E terminal Rterm-chip *) RthCH +150 -40...+125 -40...+125 °C °C °C 6000 V~ 4-6 8 - 10 Nm Nm Base-heatsink, M6 screws Main terminals, M8 screws Characteristic Values min. typ. max. 10 nH Resistance terminal to chip 0.085 mΩ per module; λ grease = 1 W/m·K 0.006 K/W 1500 g Weight 417 *) V = VCE(sat) + Rterm-chip · IC resp. V = VF + Rterm-chip · IF 2-6 © 2004 IXYS All rights reserved MIO 1200-33E10 Advanced Technical Information 2400 2400 17 V 2000 17 V 2000 15 V 15 V 13 V 13 V 1600 11 V IC [A] IC [A] 1600 1200 11 V 1200 800 800 9V 9V 400 400 0 0 Tvj = 125 °C 0 1 2 3 4 0 5 1 2 3 4 5 6 7 VF [V] VCE [V] Fig. 1 Typical output characteristics, chip level Fig. 2 Typical output characteristics, chip level 2400 2400 VCE = 20V 2000 2000 25 °C 1600 1600 IC [A] IC [A] 125 °C 1200 1200 800 800 125°C 400 400 25°C VGE = 15 V 0 0 0 1 2 3 4 5 0 6 1 2 3 4 5 6 7 8 9 10 11 12 13 VGE [V] VCE [V] Fig. 3 Typical onstate characteristics, chip level Fig. 4 Typical transfer characteristics, chip level 20 1000 VGE = 0 V fOSC = 1 MHz VOSC = 50 mV VCC = 1800 Cies 15 100 C [nF] VGE [V] VCC = 2500 10 Coes 10 5 Cres IC = 1200 A Tvj = 25 °C 0 1 1 2 3 4 5 6 7 Qg [µC] 8 9 Fig. 5 Typical gate charge characteristics © 2004 IXYS All rights reserved 10 11 12 0 5 10 15 20 VCE [V] Fig. 6 Typical capacitances vs collector-emitter voltage 25 30 35 417 0 3-6 MIO 1200-33E10 Advanced Technical Information 9 6 V CC = 1800 V RG = 1.5 ohm V GE = ±15 V Tvj = 125 °C Lσ = 100 nH 5 7 E on Eon 6 3 Eon, Eoff [J] 4 Eon , E off [J] VCC = 1800 V IC = 1200 A VGE = ±15 V Tvj = 125 °C Lσ = 100 nH 8 E off 2 5 4 3 2 Eoff 1 1 0 0 0 500 1000 1500 2000 0 2500 5 10 IC [A] Fig. 7 Typical switching energies per pulse vs collector current 20 Fig. 8 Typical switching energies per pulse vs gate resistor 10 10 VCC = 1800 V IC = 1200 A VGE = ±15 V Tvj = 125 °C Lσ = 100 nH td(off) td(on), tr, td(off), tf [µs] 1 td(on), tr, td(off), tf [µs] 15 RG [ohm] tf td(on) 0.1 td(off) td(on) 1 tr tr tf VCC = 1800 V RG = 1.5 ohm VGE = ±15 V Tvj = 125 °C Lσ = 100 nH 0.1 0.01 0 500 1000 1500 2000 0 2500 5 10 15 20 RG [ohm] IC [A] Fig. 9 Typical switching times vs collector current Fig. 10 Typical switching times vs gate resistor 2400 2.5 VCC ≤ 2500 V 2000 25°C 2 125°C 1600 IF [A] ICpulse / IC 1.5 1 800 400 0.5 IC, Chip IC, Module 0 0 0 500 1000 1500 2000 VCE [V] 2500 3000 Fig. 11 Turn-off safe operating area (RBSOA) 3500 1 2 3 4 VF [V] Fig. 12 Typical diode forward characteristics, chip level 417 0 4-6 1200 © 2004 IXYS All rights reserved MIO 1200-33E10 Advanced Technical Information 1800 1800 E rec 1600 Q RR VCC = 1800 V IC = 1200 A VGE = ±15 V Tvj = 125 °C Lσ = 100 nH 1600 1400 Erec [mJ], IRM [A], QRR [µC] E rec [mJ], I RM [A], Q RR [µC] 2000 1400 IRM 1200 1000 800 VCC = 1800 V R G = 1.5 ohm VGE = ±15 V Tvj = 125 °C Lσ = 100 nH 600 400 200 1200 1000 QRR 800 Erec 600 IRM 400 200 0 0 0 500 1000 1500 2000 2500 3000 0 5 10 IF [A] 15 20 RG [ohm] Fig. 13 Typical reverse recovery characteristics vs forward current Fig. 14 Typical reverse recovery characteristics vs gate resistor 0.1 n Zth JC(t) = ∑ Ri(1 - e -t/τ i ) i =1 0.01 0.001 0.0001 0.001 0.01 0.1 t [s] 1 i 1 2 3 4 IGBT Zth(j-c) IGBT Ri(K/kW) 5.50 1.53 0.621 0.646 τi(ms) 193 31.2 8.0 1.48 DIODE Zth(j-h) [K/W] IGBT, DIODE Zth(j-c) Diode Ri(K/kW) 11.2 3.73 1.30 0.42 τi(ms) 189 24.5 2.69 2.36 10 417 Fig. 15 Thermal impedance vs time © 2004 IXYS All rights reserved 5-6 Advanced Technical Information MIO 1200-33E10 Outline drawing ' ' 417 Note: all dimensions are shown in mm 6-6 © 2004 IXYS All rights reserved