MWI 15-12 A7 IC25 = 30 A = 1200 V VCES VCE(sat) typ. = 2.0 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13 Preliminary Data 1 2 5 6 9 10 16 15 14 3 4 7 8 11 12 17 IGBTs Features NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes solderable pins for PCB mounting package with copper base plate ● Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC80 TC = 25°C TC = 80°C RBSOA VGE = ±15 V; RG = 82 W; TVJ = 125°C Clamped inductive load; L = 100 µH 1200 V ± 20 V 30 20 A A ● ● ● ● ● ● ● tSC (SCSOA) VCE = VCES; VGE = ±15 V; RG = 82 W; TVJ = 125°C non-repetitive Ptot TC = 25°C ICM = 35 VCEK £ VCES A 10 µs ● ● ● Advantages 140 W ● ● Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VCE(sat) IC = 15 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C 2.0 2.3 2.6 V V ● Typical Applications ● ● VGE(th) IC = 0.6 mA; VGE = VCE ICES VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C IGES td(on) tr td(off) tf Eon Eoff 4.5 6.5 V 0.9 mA mA 200 nA 0.8 VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 600 V; IC = 15 A VGE = ±15 V; RG = 82 W 100 75 500 70 2.3 1.8 ns ns ns ns mJ mJ Cies QGon VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600V; VGE = 15 V; IC = 15 A 1000 70 pF nC RthJC (per IGBT) IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved space savings reduced protection circuits package designed for wave soldering ● AC motor control AC servo and robot drives power supplies 0.88 K/W 021 Symbol 1-4 MWI 15-12 A7 Diodes Equivalent Circuits for Simulation Symbol Conditions Maximum Ratings IF25 IF80 TC = 25°C TC = 80°C Symbol Conditions VF IF = 15 A; VGE = 0 V; TVJ = 25°C TVJ = 125°C 2.4 1.7 IRM trr IF = 15 A; diF/dt = -400 A/µs; TVJ = 125°C VR = 600 V; VGE = 0 V 16 130 RthJC (per diode) 25 17 Conduction A A Characteristic Values min. typ. max. 2.7 V V A ns 2.1 K/W IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 1.37 V; R0 = 62 mΩ Free Wheeling Diode (typ. at TJ = 125°C) V0 = 1.327 V; R0 = 30 mΩ Thermal Response Module Symbol Conditions Maximum Ratings TVJ Tstg -40...+150 -40...+125 °C °C VISOL IISOL ≤ 1 mA; 50/60 Hz 2500 V~ Md Mounting torque (M5) 2.7 - 3.3 Nm Symbol Conditions Characteristic Values min. typ. max. Rpin-chip 5 dS dA Creepage distance on surface Strike distance in air RthCH with heatsink compound Weight 6 6 IGBT (typ.) Cth1 = 0.156 J/K; Rth1 = 0.685 K/W Cth2 = 1.162 J/K; Rth2 = 0.195 K/W Free Wheeling Diode (typ.) Cth1 = 0.065 J/K; Rth1 = 1.758 K/W Cth2 = 0.639 J/K; Rth2 = 0.342 K/W mΩ mm mm 0.02 K/W 180 g Dimensions in mm (1 mm = 0.0394") Higher magnification see outlines.pdf © 2000 IXYS All rights reserved 2-4 MWI 15-12 A7 50 IC 50 VGE = 17V 15V 13V A 40 IC 30 VGE = 17V 15V 13V A 40 30 11V 11V 20 20 10 9V 10 9V TVJ = 25°C TVJ = 125°C 0 0 0 1 2 3 4 0 6 V 7 5 1 2 3 4 VCE Fig. 1 Typ. output characteristics 6 V 7 5 VCE Fig. 2 Typ. output characteristics 50 50 A 40 40 A IF IC 30 30 TVJ = 125°C TVJ = 25°C 20 20 TVJ = 25°C TVJ = 125°C 10 10 VCE = 20V 0 4 6 8 10 12 VGE 0 0 14 V 16 1 2 V 3 4 VF Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 200 40 20 trr V 15 IRM VGE 160 ns A 30 trr 120 20 10 80 TVJ = 125°C VR = 600V IF = 15A 10 5 VCE = 600V IC = 15A IRM MWI1512A7 0 0 0 20 40 60 80 nC QG Fig. 5 Typ. turn on gate charge © 2000 IXYS All rights reserved 100 40 0 200 400 600 800 A/ms -di/dt 0 1000 Fig. 6 Typ. turn off characteristics of free wheeling diode 3-4 MWI 15-12 A7 6 ns mJ Eon 6 120 td(on) 4 80 600 mJ t ns td(off) Eoff 400 t 4 Eoff tr VCE = 600V VGE = ±15V 2 RG = 82W TVJ = 125°C Eon VCE = 600V VGE = ±15V RG = 82W TVJ = 125°C 2 40 200 tf 0 0 0 0 10 20 0 0 30 A 10 30 A 20 IC IC Fig. 7 Typ. turn on energy and switching times versus collector current 3 Fig. 8 Typ. turn off energy and switching times versus collector current 2.0 150 Eon 800 Eoff mJ mJ ns td(on) Eon 2 100 t ns td(off) Eoff 1.5 600 t tr VCE = 600V VGE = ±15V IC = 15A TVJ = 125°C 1 1.0 400 VCE = 600V VGE = ±15V IC = 15A TVJ = 125°C 50 0.5 200 tf 0 0 20 40 60 80 100 120 W 0 140 0.0 0 0 20 40 60 80 RG W 140 Fig.10 Typ. turn off energy and switching times versus gate resistor 40 10 A K/W 30 120 RG Fig. 9 Typ. turn on energy and switching times versus gate resistor ICM 100 ZthJC diode 1 IGBT 0.1 20 0.01 10 single pulse RG = 82 W TVJ = 125°C 0.001 0 0 200 400 600 800 1000 1200 1400 V VCE Fig. 11 Reverse biased safe operating area RBSOA © 2000 IXYS All rights reserved 0.0001 0.00001 0.0001 0.001 MWI1512A7 0.01 0.1 1 s 10 t Fig. 12 Typ. transient thermal impedance 4-4