VBO 30 IdAVM = 35 A VRRM = 1200-1800 V Single Phase Rectifier Bridge VRSM VRRM V V 800 1200 1400 1600 1800 800 1200 1400 1600 1800 VBO VBO VBO VBO VBO + + Type ~ ~ 30-08NO7 30-12NO7 30-14NO7 30-16NO7 30-18NO7* ~ – ~ * delivery time on request Symbol Conditions IdAVM TC = 85°C, module IFSM TVJ = 45°C; VR = 0 I2t Maximum Ratings 35 A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 400 440 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 360 400 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 800 810 A2s A2s 650 670 2 As A2s -40...+150 150 -40...+150 °C °C °C 2500 3000 V~ V~ ±15% ±15% ±15% ±15% Nm lb.in. Nm lb.in. 135 g TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ TVJM Tstg VISOL 50/60 Hz, RMS IISOL ≤ 1 mA Md Mounting torque (M4) t = 1 min t=1s Terminal connection torque (M4) 1.5 13 1.5 13 Weight typ. Symbol Conditions IR VR = VRRM; VR = VRRM; TVJ = 25°C TVJ = TVJM ≤ ≤ 0.3 5.0 mA mA VF IF TVJ = 25°C ≤ 2.2 V VT0 rT For power-loss calculations only TVJ = TVJM 0.85 12 V mΩ RthJC per per per per 2.8 0.7 3.4 0.85 K/W K/W K/W K/W RthJK = 150 A; Features • Package with screw terminals • Isolation voltage 3000 V~ • Planar passivated chips • Blocking voltage up to 1800 V • Low forward voltage drop • UL registered E 72873 Applications • Supplies for DC power equipment • Input rectifiers for PWM inverter • Battery DC power supplies • Field supply for DC motors Advantages • Easy to mount with two screws • Space and weight savings • Improved temperature and power cycling Dimensions in mm (1 mm = 0.0394") Characteristic Values diode; DC current module diode; DC current module 420 Data according to IEC 60747 refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 1-2 VBO 30 [A] 10 I F(OV) -----I FSM 200 1:TVJ= 150°C IFSM (A) TVJ=45°C 2:TVJ= 25°C 1.6 2 As TVJ=150°C 400 3 360 150 T VJ=45°C 1.4 TVJ=1 50°C 1.2 100 1 0 VRRM 0.8 50 1/2 V RRM 1 VRRM 0.6 IF 1 2 0 10 0.4 1.0 1.5 2.0 VF[V] 2.5 100 3.0 101 t[ms] 102 103 Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration Fig. 1 Forward current versus voltage drop per diode 50 TC [W ] 80 55 60 PSB 35 0.29 0.01 = RTHCA [K/W] 65 70 75 0.57 2 1 2 4 t [ms ] 40 DC sin.180° [A] rec.120° rec.60° 30 95 100 105 2.23 DC si n .1 8 0 ° re c .1 2 0 ° r e c. 60 ° r e c. 30 ° 20 P V TO T 0 10 IF AV M 30 0 [A ] rec.30° 85 90 1.12 40 10 Fig. 3 ∫i2dt versus time (1-10ms) per diode or thyristor 80 60 6 20 110 115 120 5.57 125 130 135 10 140 I dAV 145 ° C 150 50 100 Tamb 15 0 [K ] 0 50 100 150 200 T (°C) C Fig. 4 Power dissipation versus direct output current and ambient temperature Fig.5 Maximum forward current at case temperature 5 K/W 4 Z thJC 3 Z thJK 2 1 Z th 0.01 0.1 1 10 t[s] 420 Fig. 6 Transient thermal impedance per diode or thyristor, calculated IXYS reserves the right to change limits, test conditions and dimensions. 2-2 © 2004 IXYS All rights reserved