VMM 85-02F Dual Power HiPerFETTM Module VDSS = 200 V ID25 = 84 A RDS(on) = 25 mW Phaseleg Configuration High dv/dt, Low trr, HDMOSTM Family 2 3 3 11 10 9 8 1 8 9 1 11 10 2 Maximum Ratings 2 = Source 1 8 = Gate 2 10 = Kelvin Source 1 1 = Drain 1, Source 2 3 = Drain 2 9 = Kelvin Source 2 11 = Gate 1 Symbol Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 10 kW 200 200 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 ID80 IDM TC = 25°C TC = 80°C TC = 25°C, tp = 10 µs, pulse width limited by TJM 84 63 335 A A A Ptot TC = 25°C 370 W -40 ... +150 150 -40 ... +125 °C °C °C Applications 3000 3600 V~ V~ • Switched-mode and resonant-mode power supplies • Uninterruptible power supplies (UPS) VISOL 50/60 Hz IISOL £ 1 mA t = 1 min t=1s Md Mounting torque (M5 or 10-32 UNF) Terminal connection torque (M5) Weight Typical including screws 2.25-2.75/20-25 Nm/lb.in. 2.5-4/22-35 Nm/lb.in. 130 Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS(th) VGS = 0 V VDS = VGS, ID = 8 mA IGSS VGS = ±20 V DC, VDS = 0 500 nA IDSS VDS = VDSS, VGS = 0 V, TJ = 25°C VDS = 0.8 • VDSS, VGS = 0 V, TJ = 125°C 400 µA 2 mA RDS(on) VGS = 10 V, ID = 0.5 • ID25 Pulse test, t £ 300 µs, duty cycle d £ 2% Data per MOSFET unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions © 2000 IXYS All rights reserved 4 20 Advantages g Symbol 200 2 • Two MOSFET's in phaseleg config. • International standard package • Direct copper bonded Al2O3 ceramic base plate • Isolation voltage 3600 V~ • Low RDS(on) HDMOSTM process • Low package inductance for high speed switching • Kelvin source contact • • • • Easy to mount with two screws Space and weight savings High power density Low losses V V 25 mW 943 TJ TJM Tstg Features 1-4 VMM 85-02F Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25 pulsed 40 Ciss Coss 60 S 9600 15000 pF 1800 4500 pF Crss 620 1500 pF td(on) 70 ns VGS = 0 V, VDS = 25 V, f = 1 MHz 80 ns 200 ns tf 100 ns Qg 380 450 nC 70 110 nC 190 230 nC tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 td(off) RG = 1 W (External), resistive load Qgs Dimensions in mm (1 mm = 0.0394") VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC 0.33 K/W RthCH heatsink compound applied dS Creepage distance on surface dA Strike distance through air a Allowable acceleration Source-Drain Diode 0.2 K/W 12.7 mm 9.6 mm 50 m/s2 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Conditions IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS; VGS = 0 V, Pulse test, t £ 300 µs, duty cycle d £ 2% trr IF = IS, -di/dt = 100 A/µs, VDS = 100 V, VGS = 0 V IXYS MOSFETs and IGBTs are covered by one of the following U.S.patents: © 2000 IXYS All rights reserved 84 A 335 A 0.9 1.2 V 200 400 ns 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 VMM 85-02F ID 200 200 A 175 175 9V 8V 150 VDS = 30 V A VGS = 10 V ID TJ = 25°C 150 7V 125 125 100 100 6V 75 75 50 50 5V 25 TJ = 125°C 25 0 0 0 1 2 3 4 5 V V 0 6 1 2 3 4 5 6 7 V Fig. 1 Typical output characteristics ID = f (VDS) 1.4 R Fig. 2 Typical transfer characteristics ID = f (VGS) 2.50 normalized to RDS(on) @0.5 ID25, VGS = 10V 1.3 8 VGS DS R ID = 45 A DS(on) 2.25 norm. 2.00 DS(on) norm. 1.2 V GS 1.75 = 10 V 1.50 1.1 1.25 1.0 V GS = 15 V 0.9 1.00 0.75 0.8 0 25 50 75 100 ID 125 A 150 0.50 -50 -25 0 25 50 75 100 125 °C 150 TJ Fig. 3 Typical normalized RDS(on) = f (ID) 100 Fig. 4 Typical normalized RDS(on) = f (TJ) 1.2 A ID 80 VGS(th) VDSS 1.1 norm. 60 1.0 40 0.9 20 0.8 0 0 25 50 75 100 125 °C 150 TC Fig. 5 Continuous drain current ID = f (TC) © 2000 IXYS All rights reserved VDSS VGS(th) 0.7 -50 -25 0 25 50 75 100 °C 125 150 TJ Fig. 6 Typical normalized VDSS = f (TJ), VGS(th) = f (TJ) 3-4 VMM 85-02F 10 1000 V VDS = 100 V ID = 40 A IG = 2 mA VGS 8 A ID Limited by RDS(on) t = 1 ms 100 6 t = 10 ms 4 10 2 0 1 0 100 200 300 nC 400 t = 100 ms TK = 25°C TJ = 150°C non-repetitive 1 10 V 100 Qg 1000 VDS Fig. 7 Typical turn-on gate charge characteristics Fig. 8 Forward Safe Operating Area, ID = f (VDS) 200 100 A nF 150 Ciss 10 IS C 100 Coss TJ = 125°C 1 0.1 0 5 10 15 TJ = 25°C 50 Crss 0 0 0.00 20 V 25 VDS Fig. 9 Typical capacitances C = f (VDS), f = 1 MHz 100 s 0.25 0.50 0.75 1.00 1.25 V 1.50 VSD Fig. 10 Typical forward characteristics of reverse diode, IS = f (VSD) 1 K/W D = 0.5 g 80 fs D = 0.2 0.1 60 ZthJK D = 0.1 D=0.05 D=0.02 40 0.01 D = single pulse 20 0 0 20 40 60 80 100 A 120 ID Fig. 11 Typical transconductance gfs = f (ID) © 2000 IXYS All rights reserved 0.001 0.001 0.01 0.1 1 s 10 t Fig. 12 Transient thermal resistance ZthJK = f (tp) 4-4