APTM20DAM08TG Boost chopper MOSFET Power Module VDSS = 200V RDSon = 8mΩ typ @ Tj = 25°C ID = 208A @ Tc = 25°C Application VBUS NTC2 VBUS SENSE • • • CR1 AC and DC motor control Switched Mode Power Supplies Power Factor Correction Features • OUT Q2 G2 • • S2 NTC1 • • S2 VBUS VBUS SENSE 0/VBUS Benefits OUT • • • • OUT S2 NTC2 G2 NTC1 • • Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS compliant Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 200 208 155 832 ±30 10 781 100 50 3000 Unit V A V mΩ W A July, 2006 G2 mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM20DAM08TG – Rev 4 0/VBU S Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration APTM20DAM08TG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions Min VGS = 0V,VDS = 200V Tj = 25°C VGS = 0V,VDS = 160V T j = 125°C VGS = 10V, ID = 104A VGS = VDS, ID = 5mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz IRM Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge 8 3 Min VGS = 10V VBus = 100V ID = 208A Unit mΩ V nA nF nC 64 Test Conditions 116 1698 1872 Typ Max 500 750 Tj = 125°C Tj = 25°C 31 Tj = 125°C 60 Tj = 25°C 180 Tj = 125°C 750 www.microsemi.com µJ 1972 180 1.1 1.4 0.9 di/dt = 600A/µs µJ 1858 Min 200 Tj = 25°C Tj = 125°C Tc = 80°C ns 88 Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 208A, R G = 2.5Ω IF = 180A VR = 133V Max µA 32 Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 208A, R G = 2.5Ω IF = 180A IF = 360A IF = 180A Unit 134 Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 208A R G = 2.5Ω VR=200V Typ 14.4 4.66 0.29 280 Max 150 750 10 5 ±150 106 Chopper diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage Typ Unit V µA A 1.15 V July, 2006 IDSS Characteristic ns nC 2–6 APTM20DAM08TG – Rev 4 Symbol APTM20DAM08TG Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ Transistor Diode To Heatsink M5 2500 -40 -40 -40 2.5 RT = Min R 25 Unit °C/W V 150 125 100 4.7 160 Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K Max 0.16 0.32 Typ 50 3952 Max °C N.m g Unit kΩ K T: Thermistor temperature 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS : See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com www.microsemi.com 3–6 APTM20DAM08TG – Rev 4 July, 2006 SP4 Package outline (dimensions in mm) APTM20DAM08TG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.18 0.16 0.9 0.14 0.7 0.12 0.1 0.5 0.08 0.06 0.3 0.04 Single Pulse 0.1 0.02 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 1400 Transfert Characteristics 600 1000 9V 800 8.5V 600 8V 7.5V 400 7V 200 V DS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 500 400 300 200 TJ=25°C 100 T J=125°C 6.5V 0 0 4 8 12 16 20 24 28 0 VDS , Drain to Source Voltage (V) 1.2 Normalized to V GS=10V @ 104A 1.1 1 2 3 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 250 RDS(on) vs Drain Current ID, DC Drain Current (A) VGS=10V 1 VGS=20V 0.9 200 150 100 0.8 50 0 0 50 100 150 200 250 300 ID, Drain Current (A) 25 50 75 100 125 150 July, 2006 RDS(on) Drain to Source ON Resistance TJ=-55°C 0 TC, Case Temperature (°C) www.microsemi.com 4–6 APTM20DAM08TG – Rev 4 ID, Drain Current (A) 10V ID, Drain Current (A) VGS=15V 1200 APTM20DAM08TG 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 2.5 VGS=10V ID= 104A 2.0 1.5 1.0 0.5 0.0 -50 -25 25 50 75 100 125 150 Maximum Safe Operating Area 1.1 1.0 0.9 0.8 0.7 limited by RDSon 100µs 100 1ms 10 0.6 10ms Single pulse TJ=150°C TC=25°C 100ms 1 0 25 50 75 100 125 150 1 Capacitance vs Drain to Source Voltage 100000 Ciss 10000 Coss 1000 Crss 100 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 I D=208A V DS=40V 12 TJ =25°C VDS=100V 10 10 20 30 40 50 VDS, Drain to Source Voltage (V) 8 VDS=160V 6 4 2 0 0 40 80 120 160 200 240 280 320 Gate Charge (nC) July, 2006 0 VGS, Gate to Source Voltage (V) TC, Case Temperature (°C) www.microsemi.com 5–6 APTM20DAM08TG – Rev 4 -50 -25 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) 1000 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) ON resistance vs Temperature RDS(on), Drain to Source ON resistance (Normalized) BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 APTM20DAM08TG Delay Times vs Current Rise and Fall times vs Current 160 120 60 120 tr and tf (ns) t d(on) and td(off) (ns) t d(off) VDS=133V RG=2.5Ω T J=125°C L=100µH 80 t d(on) 40 100 tr 60 40 20 0 0 0 50 100 150 200 250 300 350 I D, Drain Current (A) 0 VDS=133V RG=2.5Ω TJ=125°C L=100µH Switching Energy (mJ) Eoff Eon 2 1 5 4 Eoff 3 Eon 2 1 0 50 100 150 200 250 300 350 0 I D, Drain Current (A) Operating Frequency vs Drain Current 250 ZVS V DS=133V D=50% R G=2.5Ω T J=125°C T C=75°C ZCS Hard switching 0 25 50 75 10 15 20 25 Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 300 200 5 Gate Resistance (Ohms) 350 50 VDS=133V ID=208A TJ=125°C L=100µH Eoff 0 100 100 150 200 250 300 350 ID, Drain Current (A) 6 3 150 50 Switching Energy vs Gate Resistance Switching Energy vs Current 4 Eon and Eoff (mJ) tf 80 20 Frequency (kHz) V DS=133V R G=2.5Ω T J=125°C L=100µH 140 100 1000 TJ =150°C 100 TJ =25°C 10 100 125 150 175 200 I D, Drain Current (A) 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM20DAM08TG – Rev 4 July, 2006 VSD, Source to Drain Voltage (V)