JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 2SD2061 TRANSISTOR (NPN) TO-220F 1. BASE FEATURES z Low saturation voltage z Excellent DC current gain characteristice 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Paramenter Value Units VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 3 A PC Collector Power Dissipation 2 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -55-150 ℃ www.DataSheet4U.com ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless Parameter otherwise conditions specified) Symbol Test MIN TYP Collector-base breakdown voltage V(BR)CBO IC=50µA, IE=0 80 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 60 V Emitter-base breakdown voltage V(BR)EBO IE=50µA, IC=0 5 V Collector cut-off current ICBO VCB=60V, IE=0 10 µA Emitter cut-off current IEBO VEB=4V, IC=0 10 µA DC current gain hFE VCE=5V, IC=0.5A 100 MAX UNIT 320 Collector-emitter saturation voltage VCE(sat) IC=2A, IB=0.2A 1 V Base-emitter saturation voltage VBE(sat) IC=2A, IB=0.2A 1.5 V Transition frequency Collector output capacitance fT Cob VCE=5V, IC=0.5A, f=5MHz 8 MHz VCB=10V, IE=0, f=1MHz 70 pF Typical Characteristics www.DataSheet4U.com 2SD2061