JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors A733LT1 SOT—23 TRANSISTOR（ PNP ） 1. BASE 2. EMITTER 3. COLLECTOR FEATURES １．０ Power dissipation PCM : 0.2 W（Tamb=25℃） Collector current ICM : -0.15 A Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range T J ，T stg: -55℃ to +150℃ ０．９５ ０．９５ ０．４ １．９ ２．９ ２．４ １．３ Unit : mm ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Symbol unless Test otherwise conditions specified） MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -5 μA ， IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC= -1 -50 V Emitter-base breakdown voltage V(BR)EBO IE= -50 μA， IC=0 Collector cut-off current ICBO VCB= -60 V , IE=0 -0.1 μA Emitter cut-off current IEBO VEB= -5 V , -0.1 μA DC current gain HFE（1） VCE= -6 V, IC= -1mA Collector-emitter saturation voltage VCE(sat) IC= -100mA, IB=- 10m A mA , IB=0 V -5 IC=0 120 475 -0.18 -0.3 V VCE= -6 V, IC=-10mA Transition frequency f 50 T MHz f = 30MHz CLASSIFICATION OF HFE(1) Rank L H Range 120-200 200-475 MARKING CS SOT-23 PACKAGE OUTLINE DIMENSIONS D θ b L E E1 L1 0.2 e C Symbol A A1 A2 e1 Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 e e1 1.800 L 0.100 0.037TPY 0.950TPY 2.000 0.071 0.550REF 0.079 0.022REF L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8°