JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-02L Plastic-Encapsulate Diodes FRB751 WBFBP-02L Schottky barrier Diodes (0.8×0.6×0.45) unit: mm DESCRIPTION Silicon epitaxial planar FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability 1 APPLICATION High speed switching For Detection For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) MARKING: 5 5 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol Limits Unit Peak reverse voltage VRM 40 V DC reverse voltage VR 30 V Mean rectifying current IO 30 mA IFSM 150 mA Junction temperature Tj 125 ℃ Storage temperature Tstg -40~125 ℃ Peak forward surge current Electrical Ratings @TA=25℃ Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VF 0.37 V IF=1mA Reverse current IR 0.5 μA VR=30V Capacitance between terminals CT pF VR=1V,f=1MHZ 2 Typical Characteristics Sym bol D E D1 E1 b H k L1 L2 D im e n s io n s In M illim e t e r s M in . M ax. 0 .7 5 0 0 .8 5 0 0 .5 5 0 0 .6 5 0 0 .2 2 0 0 .3 2 0 0 .4 0 0 0 .5 0 0 0 .3 0 0 R E F . 0 .4 4 0 0 .5 4 0 0 .2 8 R E F . 0 .1 0 0 0 .2 0 0 0 .0 5 0 R E F . D im e n s io n s In In c h e s M in . M ax. 0 .0 3 0 0 .0 3 4 0 .0 2 2 0 .0 2 6 0 .0 0 9 0 .0 1 3 0 .0 1 6 0 .0 2 0 0 .0 1 2 R E F . 0 .0 1 7 0 .0 2 1 0 .0 1 1 R E F . 0 .0 0 4 0 .0 0 8 0 .0 0 2 R E F .